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CN-115666142-B - Synaptic transistor device with wide spectral response and preparation method thereof

CN115666142BCN 115666142 BCN115666142 BCN 115666142BCN-115666142-B

Abstract

The synaptic transistor device with the wide spectral response is characterized by comprising a floating gate layer, a tunneling layer, an active layer, a source drain electrode, a substrate, an insulating layer and a gate electrode, wherein the floating gate layer is used for capturing optical signals with different wavelengths to generate photon-generated carriers, the tunneling layer is arranged on the floating gate layer and used for storing the photon-generated carriers generated in the floating gate layer, the active layer is arranged on the tunneling layer and used for transmitting charge carriers and photon-generated carriers, the source drain electrode is symmetrically arranged on the active layer and used for providing driving voltage to drive the charge carriers and the photon-generated carriers in the active layer to flow to form a loop, the substrate is arranged at the bottommost end of the synaptic transistor device and used as a basis for preparing the synaptic transistor device, the gate electrode is arranged on the substrate and used for inducing the charge carriers in the active layer, the insulating layer is arranged between the gate electrode and the floating gate layer and used for isolating conduction of the gate electrode and the active layer, and the floating gate layer is made of quantum dots with wide spectral response, and a heterojunction structure is formed between the floating gate layer and the active layer.

Inventors

  • HUANG JIA
  • ZHANG JUNYAO

Assignees

  • 同济大学

Dates

Publication Date
20260505
Application Date
20221101

Claims (10)

  1. 1.A synaptic transistor device with a broad spectral response comprising: The floating gate layer is used for capturing optical signals with different wavelengths so as to generate photo-generated carriers; The tunneling layer is arranged on the floating gate layer and is used for storing the photo-generated carriers generated in the floating gate layer; An active layer disposed on the tunneling layer for transporting charge carriers and the photogenerated carriers; The source electrode and the drain electrode are symmetrically arranged on the active layer and are used for providing driving voltage and driving the flow of the charge carriers and the photo-generated carriers in the active layer to form a loop; A substrate disposed at the bottommost end of the synaptic transistor device for use as a basis for preparing the synaptic transistor device; a gate electrode disposed on the substrate for inducing the charge carriers in the active layer; An insulating layer arranged between the gate electrode and the floating gate layer for isolating conduction between the gate electrode and the active layer, The floating gate layer is made of quantum dots with wide spectral response, the active layer is made of organic semiconductor materials, and a heterojunction structure is formed between the floating gate layer and the active layer.
  2. 2. The synaptic transistor device with broad spectral response as recited in claim 1, wherein: Wherein the quantum dot material with wide spectral response in the floating gate layer is at least one of lead sulfide quantum dot, lead selenide quantum dot, silver sulfide quantum dot, silver selenide quantum dot, copper indium selenium quantum dot or mercury telluride quantum dot, The light absorption range of the quantum dot material with the wide spectral response covers three areas of ultraviolet light, visible light and near infrared.
  3. 3. The synaptic transistor device with broad spectral response as recited in claim 1, wherein: The tunneling layer is one of silicon dioxide, aluminum oxide, polymethyl methacrylate, polystyrene, polyvinyl alcohol, polyvinylpyrrolidone or silk protein.
  4. 4. The synaptic transistor device with broad spectral response as recited in claim 1, wherein: The active layer material is an organic semiconductor with a benzene ring structure or a thiophene structure, and the thickness of the active layer is 5 nm-100 nm.
  5. 5. The synaptic transistor device with broad spectral response as recited in claim 1, wherein: the source-drain electrode material is one of doped silicon, conductive metal, conductive alloy or conductive metal oxide, and the thickness of the source-drain electrode is 5 nm-2000 nm.
  6. 6. The synaptic transistor device with broad spectral response as recited in claim 1, wherein: wherein the substrate is made of one of a glass substrate, a quartz substrate, a silicon substrate, a PET substrate or a PEN substrate.
  7. 7. The synaptic transistor device with broad spectral response as recited in claim 1, wherein: Wherein the gate electrode is one of doped silicon, conductive metal, conductive alloy or conductive metal oxide.
  8. 8. The synaptic transistor device with broad spectral response as recited in claim 1, wherein: The insulating layer material is one of silicon dioxide, aluminum oxide, polymethyl methacrylate, polystyrene, polyvinyl alcohol, polyvinylpyrrolidone or silk protein.
  9. 9. A method of manufacturing a synaptic transistor device with broad spectral response for manufacturing a synaptic transistor device with broad spectral response as claimed in any of claims 1-8, comprising the steps of: Step S1, setting the substrate; Step S2, preparing the gate electrode on the substrate; Step S3, preparing the insulating layer on the gate electrode; Step S4, preparing materials for preparing the floating gate layer on the insulating layer sequentially through spin coating, drop coating, lifting and printing to obtain the floating gate layer; step S5, preparing materials for preparing the tunneling layer on the floating gate layer sequentially through spin coating, drop coating, lifting and printing to obtain the tunneling layer; step S6, preparing a material for preparing the active layer on the tunneling layer by a spin coating, vapor deposition, lifting or printing method to obtain the active layer; and S7, preparing two source and drain electrodes on the active layer through an evaporation or imprinting method.
  10. 10. The method of manufacturing a synaptic transistor device with broad spectral response as claimed in claim 9, wherein: in the step S4, the step S5 and the step S6, the process parameters of the spin coating method are spin coating rotation speed of 500r/min-5000 r/min and spin coating time of 10S-200S.

Description

Synaptic transistor device with wide spectral response and preparation method thereof Technical Field The invention relates to the technical field of transistors, in particular to a synaptic transistor device with wide spectral response and a preparation method thereof. Background Computers of von neumann architecture have evolved rapidly over the past half century due to their advantages in solving structured mathematical problems, however, they are currently difficult to meet with increasing demands for energy efficiency and intelligent computation, because frequent data transfers between physically separate processors and memory in von neumann architecture consume huge amounts of energy, as the most powerful information processor in nature, the brain is capable of high-speed computation with ultra-low power consumption, distributed parallel processing, and the brain is also adept at intelligent activities such as self-learning, future event prediction and language understanding, so computation like brain is more energy-efficient and intelligent than von neumann computation, and thus neuromorphic computation mimicking brain function is becoming one of the most important choices for next generation computation. The information transmission among neurons is realized through synapses in a nervous system, the realization of neuromorphic calculation is greatly dependent on the development of synaptic devices, a plurality of various synaptic devices based on electric stimulation resistance change exist in the prior art, but the various synaptic devices with the electric stimulation resistance change have the defects of limited calculation speed, easy interference and high power consumption due to the balance of bandwidth connection density, in addition, the optical stimulation synaptic devices in the prior art are only limited to respond to the optical stimulation of one or two areas of ultraviolet light, visible light or near infrared light, and most of the optical stimulation synaptic devices only explore the response to single-wavelength optical signals, and lack of the synaptic transistor devices responding to the optical signals of ultraviolet light, visible light and near infrared light with wide spectrum limit the further development of neuromorphic calculation. Disclosure of Invention The present invention has been made to solve the above problems, and an object of the present invention is to provide a synaptic transistor device having a broad spectral response and a method for manufacturing the same, and to provide the following technical solutions: The invention provides a synaptic transistor device with wide spectral response, which is characterized by comprising a floating gate layer, a tunneling layer, an active layer, a source drain electrode, a substrate, an insulating layer and a gate electrode, wherein the floating gate layer is used for capturing optical signals with different wavelengths so as to generate photon-generated carriers, the tunneling layer is arranged on the floating gate layer and is used for storing the photon-generated carriers generated in the floating gate layer, the active layer is arranged on the tunneling layer and is used for transmitting charge carriers and photon-generated carriers, the source drain electrode is symmetrically arranged on the active layer and is used for providing driving voltage and is used for driving the charge carriers and photon-generated carriers in the active layer to flow so as to form a loop, the substrate is arranged at the bottommost end of the synaptic transistor device and is used as a basis for preparing the synaptic transistor device, the gate electrode is arranged on the substrate and is used for inducing the charge carriers in the active layer, the insulating layer is arranged between the gate electrode and the floating gate layer and is used for isolating the conduction of the gate electrode and the active layer, the floating gate layer is made of quantum dots with wide spectral response, the active layer is made of organic semiconductor material, and a heterogeneous junction structure is formed between the floating gate layer and the active layer. The synaptic transistor device with the broad spectral response provided by the invention can be characterized in that the quantum dot material with the broad spectral response in the floating gate layer is at least one of lead sulfide quantum dot, lead selenide quantum dot, silver sulfide quantum dot, silver selenide quantum dot, copper indium selenium quantum dot or mercury telluride quantum dot, and the light absorption range of the quantum dot material with the broad spectral response covers three areas of ultraviolet light, visible light and near infrared light. The synaptic transistor device with wide spectral response may be further characterized in that the tunneling layer is one of silicon dioxide, aluminum oxide, polymethyl methacrylate, polystyrene, polyvinyl alcohol, polyvinylpyrr