CN-115733481-B - Signal conversion circuit, chip and electronic equipment

Abstract

The invention discloses a signal conversion circuit, a chip and electronic equipment, wherein the circuit comprises a first diode and a second diode, the anode of the first diode is connected with a signal input end, the cathode of the first diode is connected with the cathode of the second diode, a first connection point is formed, the anode of the second diode is grounded, a first positive voltage signal and a second positive voltage signal of the signal input end are converted into a second positive voltage signal and a second positive voltage signal through the first diode and the second diode and are output through the first connection point, the input end of the inverter is connected with the first connection point, the output end of the inverter is connected with the signal output end, and the second positive voltage signal are converted into CMOS/TTL level signals through the inverter and are output through the signal output end. Therefore, the function of converting positive and negative voltages into logic levels can be realized, the voltage withstand requirement of the inverter can be reduced, the manufacturing process of the inverter can be more selective, the circuit is simple, and the chip area can be saved.

Inventors

• ZHOU SHICONG
• YUAN YIDONG
• SHEN HONGWEI
• JIN RONG
• LIU XIAOYAN
• WU PING
• SHI JINGCHAO

Assignees

• 北京智芯半导体科技有限公司
• 北京智芯微电子科技有限公司

Dates

Publication Date

20260505

Application Date

20221027

Claims (8)

1. 1. A signal conversion circuit, comprising: the positive electrode of the first diode is connected with the negative electrode of the second diode, a first connection point is formed on the positive electrode of the first diode, the positive electrode of the second diode is grounded, and the first positive voltage signal and the second positive voltage signal of the signal input end are converted into second positive voltage signal and second positive voltage signal through the first diode and the second diode and are output through the first connection point; the input end of the inverter is connected with the first connecting point, and the output end of the inverter is connected with the signal output end, wherein the second positive and negative voltage signals are converted into CMOS/TTL level signals through the inverter and are output through the signal output end; When the voltage of the signal input end is a first positive voltage and is higher than the forward conduction voltage of the first diode, the first diode is forward-conducted, the voltage of the first connection point changes along with the voltage of the signal input end and is clamped below the reverse breakdown voltage of the second diode, and when the voltage of the signal input end is a first negative voltage, the first diode is reversely cut off, the second diode is forward-conducted, and the voltage of the first connection point is clamped at the forward conduction voltage of the second diode so as to convert the first positive and negative voltage signal of the signal input end into a second positive and negative voltage signal; the first diode is a schottky diode, and the second diode is a zener diode.
2. 2. The signal conversion circuit of claim 1, wherein the reverse withstand voltage of the first diode is higher than the maximum amplitude of the first positive and negative voltage signal.
3. 3. The signal conversion circuit of claim 1, wherein the reverse breakdown voltage of the second diode is N times the maximum amplitude of the CMOS/TTL level signal, wherein N is greater than 1.
4. 4. The signal conversion circuit of claim 1, further comprising: And the resistor is connected in series between the anode of the first diode and the signal input end.
5. 5. The signal conversion circuit according to claim 1, wherein the inverter includes: The first end of first switch tube with the first end of second switch tube all with first tie point links to each other, the second end of first switch tube links to each other with predetermineeing the power, the third end of first switch tube with the third end of second switch tube links to each other and is formed with the second tie point, the second tie point with signal output part links to each other, the second ground connection of second switch tube.
6. 6. The signal conversion circuit according to claim 5, wherein the first switching tube is a PMOS tube and the second switching tube is an NMOS tube.
7. 7. A chip comprising a signal conversion circuit according to any one of claims 1-6.
8. 8. An electronic device comprising a chip according to claim 7.

Description

Signal conversion circuit, chip and electronic equipment Technical Field The present invention relates to the field of chip technologies, and in particular, to a signal conversion circuit, a chip, and an electronic device. Background With miniaturization of integrated circuit manufacturing process, the gate withstand voltage of MOS devices in a circuit is gradually reduced, and in chip design, when a logic level signal of CMOS or TTL type needs to be converted from positive and negative high levels, the conversion circuit is generally formed by using a MOS device with high gate withstand voltage, for example, when a logic level needs to be converted from a level of ±25v, the conversion circuit is formed by using a MOS device with gate withstand voltage exceeding 25V, which limits the selectivity of a chip process chain. In contrast, a conversion circuit has been proposed in the related art, in which, as shown in fig. 1, an input voltage is divided by resistors, and then signal conversion is performed by a comparator circuit, so that a function of converting positive and negative high levels into logic levels is realized by a MOS device with low gate withstand voltage. The related art has a disadvantage in that the use of the voltage dividing resistor in the circuit occupies a large amount of chip area, and also generates high standby power consumption because the comparator also has standby current during standby. Disclosure of Invention The present invention aims to solve at least one of the technical problems in the related art to some extent. Therefore, a first object of the present invention is to provide a signal conversion circuit, which converts an input first positive and negative voltage signal into a second positive and negative voltage signal with an adjustable voltage range through a first diode and a second diode, then converts the second positive and negative voltage signal into a CMOS/TTL level signal through an inverter, and outputs the CMOS/TTL level signal through a signal output terminal, thereby not only realizing the function of converting the positive and negative voltage signal into a logic level signal, but also reducing the voltage-withstanding value requirement of the inverter, so that the manufacturing process of the signal conversion circuit has more selectivity, and meanwhile, the circuit is simple, the chip area can be effectively saved, and the optimization of the circuit is realized. A second object of the invention is to propose a chip. A third object of the present invention is to propose an electronic device. In order to achieve the above object, an embodiment of the first aspect of the present invention provides a signal conversion circuit, which includes a first diode and a second diode, wherein an anode of the first diode is connected to a signal input terminal, a cathode of the first diode is connected to a cathode of the second diode, and a first connection point is formed, and an anode of the second diode is grounded, wherein a first positive and negative voltage signal of the signal input terminal is converted into a second positive and negative voltage signal through the first diode and the second diode and is output through the first connection point, an inverter, an input terminal of the inverter is connected to the first connection point, and an output terminal of the inverter is connected to a signal output terminal, wherein the second positive and negative voltage signal is converted into a CMOS/TTL level signal through the inverter and is output through the signal output terminal. According to the signal conversion circuit provided by the embodiment of the invention, the first positive and negative voltage signals input are converted into the second positive and negative voltage signals with adjustable voltage ranges through the first diode and the second diode, then the second positive and negative voltage signals are converted into CMOS/TTL level signals through the inverter, and the CMOS/TTL level signals are output through the signal output end, so that the function of converting the positive and negative voltage signals into logic level signals is realized, the voltage resistance requirement of the inverter is reduced, the manufacturing process of the signal conversion circuit has more selectivity, meanwhile, the circuit is simple, the chip area can be effectively saved, and the optimization of the circuit is realized. According to one embodiment of the present invention, when the voltage of the signal input terminal is a first positive voltage and is higher than the forward conduction voltage of the first diode, the first diode is forward-turned on, the voltage of the first connection point changes along with the voltage of the signal input terminal and is clamped below the reverse breakdown voltage of the second diode, and when the voltage of the signal input terminal is a first negative voltage, the first diode is reversely turned off, the second diod