CN-115747772-B - Deposition system and method

Abstract

A deposition system and deposition method are provided. The deposition method includes placing a substrate above a platen in a chamber of a deposition system. A precursor material is introduced into the chamber. A first air curtain is generated in front of a first Electromagnetic (EM) radiation source coupled to the chamber. A plasma is generated from the precursor material in the chamber, wherein the plasma includes dissociated components of the precursor material. The plasma is subjected to first EM radiation from a first EM radiation source. The first EM radiation further dissociates the precursor material. A layer is deposited over the substrate. The layer includes a reaction product of dissociated components of the precursor material.

Inventors

• LI ZILIANG
• ZHENG BAIXIAN

Assignees

• 台湾积体电路制造股份有限公司

Dates

Publication Date

20260508

Application Date

20220601

Priority Date

20220218

Claims (20)

1. 1. A deposition method, comprising: Placing a substrate over a mounting platform in a chamber of a deposition system; introducing a precursor material into the chamber and dispensing the precursor material into the chamber using a spray head; Flowing an inert gas into the chamber before a first electromagnetic radiation source and a second electromagnetic radiation source after introducing the precursor material to create a gas curtain in front of the first electromagnetic radiation source and the second electromagnetic radiation source coupled to the chamber; generating a plasma from the precursor material in the chamber, wherein the plasma comprises dissociated components of the precursor material; subjecting the plasma to first electromagnetic radiation from the first electromagnetic radiation source, wherein the first electromagnetic radiation further dissociates the precursor material; Depositing a layer over the substrate, the layer comprising a reaction product of the dissociated components of the precursor material, and Burning cluster defects in the layer at the edge of the substrate using second electromagnetic radiation from the second electromagnetic radiation source, Wherein the first electromagnetic radiation generated by the first electromagnetic radiation sources enters the chamber through a first window and propagates between the mounting platform and the showerhead, the second electromagnetic radiation sources are positioned along an edge of the substrate in plan view and have a uniform spacing in the range between 50mm and 200 mm, the second electromagnetic radiation generated by each of the second electromagnetic radiation sources enters the chamber through a corresponding second window, irradiates a corresponding portion of the edge of the substrate, and the air curtain is used to protect the first and second windows such that material deposited over the substrate is not deposited on the first and second windows.
2. 2. The deposition method of claim 1, wherein the mounting platform has an annular shape in plan view.
3. 3. The deposition method of claim 1 wherein the first electromagnetic radiation source is an ultraviolet source or a laser source.
4. 4. The deposition method of claim 1, wherein the second electromagnetic radiation source is an ultraviolet source or a laser source.
5. 5. The deposition method of claim 1 wherein the material of the first window is selected to be transparent to the first electromagnetic radiation.
6. 6. The deposition method of claim 1, further comprising adjusting a temperature of the substrate to a desired temperature.
7. 7. The deposition method of claim 1 wherein the material of the second window is selected to be a material transparent to the second electromagnetic radiation.
8. 8. The deposition method of claim 1 wherein the precursor material comprises SiH 4 、Si 2 H 6 、SiCl 2 H 2 、SiCl 4 or Si 2 Cl 6 , and wherein the layer comprises amorphous silicon.
9. 9. A deposition method, comprising: Placing a substrate over a mounting platform in a chamber of a deposition system; introducing a precursor material into the chamber and dispensing the precursor material into the chamber using a spray head; Flowing an inert gas into the chamber before a first electromagnetic radiation source and a second electromagnetic radiation source after introducing the precursor material to create a gas curtain in front of the first electromagnetic radiation source and the second electromagnetic radiation source coupled to the chamber; subjecting the precursor material to first electromagnetic radiation from the first electromagnetic radiation source, the first electromagnetic radiation dissociating the precursor material; Depositing a layer over the substrate, the layer comprising a reaction product of the dissociated components of the precursor material, and Burning cluster defects in the layer at the edge of the substrate using second electromagnetic radiation from the second electromagnetic radiation source, Wherein first electromagnetic radiation generated by the first electromagnetic radiation sources enters the chamber through a first window and propagates between the mounting platform and the showerhead, the second electromagnetic radiation sources are positioned along an edge of the substrate in plan view and have a uniform spacing in the range between 50 mm and 200 mm, second electromagnetic radiation generated by each of the second electromagnetic radiation sources enters the chamber through a corresponding second window, irradiates a corresponding portion of the edge of the substrate, and the air curtain is used to protect the first and second windows such that material deposited over the substrate is not deposited on the first and second windows.
10. 10. The deposition method of claim 9, wherein the mounting platform has an annular shape in plan view.
11. 11. The deposition method of claim 9 wherein the first electromagnetic radiation source is an ultraviolet source or a laser source.
12. 12. The deposition method of claim 9, further comprising adjusting a temperature of the substrate to a desired temperature.
13. 13. The deposition method of claim 12 wherein the material of the first window is selected to be transparent to the first electromagnetic radiation and the material of the second window is selected to be transparent to the second electromagnetic radiation.
14. 14. The deposition method of claim 9 wherein the second electromagnetic radiation source is an ultraviolet source or a laser source.
15. 15. The deposition method of claim 9 wherein the precursor material comprises SiH 4 、Si 2 H 6 、SiCl 2 H 2 、SiCl 4 or Si 2 Cl 6 , and wherein the layer comprises amorphous silicon.
16. 16. A deposition system, comprising: a chamber having a first window on a side of the chamber and a second window on a top of the chamber; a mounting platform located in the chamber, the mounting platform comprising a first electrode; a showerhead positioned above the mounting platform in the chamber, the showerhead including a second electrode; A plasma power source coupled to the second electrode, and A first electromagnetic radiation source attached to the side of the chamber, first electromagnetic radiation generated by the first electromagnetic radiation source entering the chamber through the first window and propagating between the mounting platform and the showerhead, and A second electromagnetic radiation source attached to the top of the chamber, second electromagnetic radiation generated by the second electromagnetic radiation source entering the chamber through the second window, illuminating a corresponding portion of the edge of a substrate placed on the mounting platform, the second electromagnetic radiation source being placed along the edge of the mounting platform in plan view and having a uniform spacing, the spacing being in a range between 50mm and 200 mm.
17. 17. The deposition system of claim 16 wherein the mounting platform has an annular shape in plan view.
18. 18. The deposition system of claim 16 wherein the first electromagnetic radiation source is separated from the chamber by the first window.
19. 19. The deposition system of claim 16 wherein the second electromagnetic radiation source is separated from the chamber by the second window.
20. 20. The deposition system of claim 16 wherein the first electromagnetic radiation source is an ultraviolet source or a laser source.

Description

Deposition system and method Technical Field Embodiments of the invention relate to deposition systems and methods. Background Semiconductor devices are used in a variety of electronic applications, such as, for example, personal computers, cell phones, digital cameras, and other electronic devices. Semiconductor devices are typically fabricated by sequentially depositing insulating or dielectric layers, conductive layers, and semiconductor layers of materials over a semiconductor substrate, and patterning the various material layers using photolithography to form circuit components and elements thereon. The semiconductor industry continues to increase the integration density of various electronic components (e.g., transistors, diodes, resistors, capacitors, etc.) by continually reducing the minimum feature size, thereby allowing more components to be integrated into a given area. However, as the minimum component size decreases, other problems to be solved arise. Disclosure of Invention According to one aspect of an embodiment of the present invention, there is provided a deposition method comprising placing a substrate over a platen in a chamber of a deposition system, introducing a precursor material into the chamber, generating a first gas curtain in front of a first Electromagnetic (EM) radiation source coupled to the chamber, generating a plasma from the precursor material in the chamber, wherein the plasma comprises dissociated components of the precursor material, subjecting the plasma to first EM radiation from the first EM radiation source, wherein the first EM radiation further dissociates the precursor material, and depositing a layer over the substrate, the layer comprising a reaction product of the dissociated components of the precursor material. According to another aspect of an embodiment of the present invention, there is provided a deposition method comprising placing a substrate on a platen in a chamber of a deposition system, flowing a precursor material into the chamber, generating a first gas curtain in front of a first Electromagnetic (EM) radiation source coupled to the chamber, generating a plasma from the precursor material in the chamber, wherein the plasma comprises dissociated components of the precursor material, depositing a layer over the substrate, the layer comprising a reaction product of the dissociated components of the precursor material, the layer comprising an aggregation defect at an edge of the substrate, and removing the aggregation defect from the layer using the first EM radiation from the first EM radiation source. According to yet another aspect of an embodiment of the present invention, there is provided a deposition system including a chamber having a first window on a side of the chamber, a platen in the chamber, the platen including a first electrode, a showerhead above the platen in the chamber, the showerhead including a second electrode, a plasma power source coupled to the second electrode, and a first Electromagnetic (EM) radiation source attached to the side of the chamber, the first EM radiation generated by the first EM source entering the chamber through the first window and propagating between the platen and the showerhead. Drawings The various aspects of the invention are best understood from the following detailed description when read in connection with the accompanying drawings. It should be emphasized that, in accordance with the standard practice in the industry, various features are not drawn to scale and are used for illustration purposes only. In fact, the dimensions of the various features may be arbitrarily increased or reduced for clarity of discussion. Fig. 1A and 1B illustrate cross-sectional views of deposition systems according to some embodiments. Fig. 2 illustrates a cross-sectional view of a substrate, according to some embodiments. Fig. 3 is a flow chart illustrating a deposition method according to some embodiments. Fig. 4 is a flow chart illustrating a deposition method according to some embodiments. Fig. 5 is a cross-sectional view illustrating a deposition system according to some embodiments. Fig. 6A-6C are three-dimensional and cross-sectional views illustrating a deposition system according to some embodiments. Fig. 7 is a flow chart illustrating a deposition method according to some embodiments. Fig. 8 is a flow chart illustrating a deposition method according to some embodiments. Fig. 9 is a cross-sectional view illustrating a deposition system according to some embodiments. Fig. 10 is a flow chart illustrating a deposition method according to some embodiments. Fig. 11 is a flow chart illustrating a deposition method according to some embodiments. Fig. 12 is a cross-sectional view illustrating a deposition system according to some embodiments. Detailed Description The following disclosure provides many different embodiments, or examples, for implementing different features of the invention. Specific embodiments or exa