CN-115752810-B - Temperature calibration device and method for testing high-temperature environment temperature-pressure integrated chip

Abstract

The invention discloses a temperature calibration device and a temperature calibration method for testing a temperature-pressure integrated chip in a high-temperature environment, wherein the temperature calibration device comprises a thermocouple, a fixing device and a signal collector, the fixing device comprises a ceramic plate, a limit boss, a first bonding pad and a second bonding pad are arranged on the ceramic plate, one end of the limit boss is contacted with the end face of a thermocouple shell of the thermocouple, the limit boss is used for installing the temperature-pressure integrated chip for calibration, a thermocouple temperature probe of the thermocouple is contacted with the temperature-pressure integrated chip, the temperature-pressure integrated chip is connected with the second bonding pad through the first bonding pad, and the second bonding pad is connected with the signal collector through a wire. The device can endure the high temperature of 600 ℃ and above in the air, and can carry out temperature calibration to the high temperature environment of 600 ℃ and above, accurately acquire the temperature parameter of temperature and pressure integrated chip pressure sensing department under the high temperature environment, realize the temperature calibration to the temperature unit and the compensation to pressure unit zero pressure temperature drift.

Inventors

• FANG XUDONG
• TIAN BIAN
• JIANG ZHUANGDE
• FANG ZIYAN
• WU CHEN
• ZHANG DONG
• JIANG XIAOXING
• SUN HAO
• LV ZHIGUANG
• ZHAO YONGCHAO
• ZHAO LIBO

Assignees

• 西安交通大学

Dates

Publication Date

20260505

Application Date

20221128

Claims (10)

1. 1. The temperature calibration device for the temperature and pressure integrated chip test in the high-temperature environment is characterized by comprising a thermocouple (1), a fixing device and a signal collector (13); The fixing device comprises a ceramic plate (6), wherein a limit boss (601), a first bonding pad (604) and a second bonding pad (605) for installing a warm-pressing integrated chip (7) are arranged on the ceramic plate (6), one end of the limit boss (601) is contacted with a thermocouple shell end face (102) of a thermocouple (1), and when calibration is carried out, a thermocouple temperature probe (101) of the thermocouple (1) is contacted with the warm-pressing integrated chip (7); the temperature and pressure integrated chip (7) is connected with a second bonding pad (605) through a first bonding pad (604), and the second bonding pad (605) is connected with the signal collector (13) through a wire (8).
2. 2. The temperature calibration device for the high-temperature environment warm-pressing integrated chip test according to claim 1, wherein one end of the ceramic plate (6) is clamped between the first bolt plate (41) and the second bolt plate (42), the first bolt plate (41), the second bolt plate (42) and the ceramic plate (6) are connected through a fastener, the thermocouple (1) penetrates through a central hole of the first bolt plate (41) to extend above the limit boss (601), the other end of the ceramic plate (6) is clamped between the fourth bolt plate (44) and the third bolt plate (43), and the ceramic plate (6), the fourth bolt plate (44) and the third bolt plate (43) are connected through the fastener.
3. 3. The temperature calibration device for high temperature environment temperature and pressure integrated chip testing according to claim 2, wherein the first bolt plate (41), the second bolt plate (42), the third bolt plate (43), the fourth bolt plate (44) and the fastener are all ceramic products.
4. 4. A temperature calibration device for high temperature environment temperature and pressure integrated chip testing according to claim 2, wherein the central axis of the hole of the first bolt plate (41) coincides with the central line of the limit boss (601).
5. 5. The temperature calibration device for high-temperature environment temperature and pressure integrated chip testing according to claim 2, wherein the limiting boss (601) is provided with a chip fixing groove (602).
6. 6. The temperature calibration device for high temperature environment temperature and pressure integrated chip test according to claim 5, wherein the distance between the end face of the limit boss (601) contacting with the end face of the thermocouple housing (102) and the center of the chip fixing slot (602) is s1, the protruding distance between the center of the thermocouple temperature probe (101) and the end face of the thermocouple housing (102) is s2, 。
7. 7. The temperature calibration device for high temperature environment temperature and pressure integrated chip testing according to claim 5, wherein a chip lifting groove (603) is formed on the side surface of the chip fixing groove (602).
8. 8. The temperature calibration device for testing the high-temperature environment temperature and pressure integrated chip according to claim 1, wherein the limiting boss (601) arranged on the ceramic plate (6) is used for designing the array number and the array mode according to the requirement.
9. 9. The temperature calibration device for testing a temperature-pressure integrated chip under a high-temperature environment according to claim 1, wherein when the temperature calibration device is used for calibrating, the temperature-pressure integrated chip (7) is connected with a first bonding pad (604) through a metal lead (607), the first bonding pad (604) is connected with a second bonding pad (605) through a circuit (606), the metal lead (607) is fixed between the bonding pad of the temperature-pressure integrated chip (7) and the first bonding pad (604) through high-temperature-resistant conductive silver paste, and the circuit (606) is fixed between the first bonding pad (604) and the second bonding pad (605) through high-temperature-resistant conductive silver paste.
10. 10. The temperature calibration method for the temperature and pressure integrated chip based on the temperature calibration device as claimed in claim 1, which is characterized by comprising the following steps: Step 1, connecting a warm-pressing integrated chip (7) with the head end of a wire (8), then installing the integrated chip on a fixing device, placing the integrated chip in a high-temperature furnace (11), exposing the thermocouple (1) and the tail end of the wire (8) to the room-temperature environment, and connecting the thermocouple and the tail end of the wire with a signal collector (13); Step 2, keeping the temperature-pressure integrated chip (7) in a state of no pressure, taking a series of temperature points from room temperature to 600 ℃, measuring temperature signals of the temperature-pressure integrated chip (7) at all the temperature points through a thermocouple (1) and transmitting the temperature signals to a signal collector (13), and simultaneously, recording voltage signals output by a pressure unit of the temperature-pressure integrated chip (7) and potential signals output by the temperature unit through a lead (8) by the signal collector (13) at all the temperature points; Step 3, taking the temperature signal obtained by the thermocouple (1) as a standard temperature, taking the voltage signal output by the pressure unit of the temperature-pressure integrated chip (7) as zero pressure drift amount for storage, taking the standard temperature as an independent variable, taking the voltage signal output by the pressure unit of the temperature-pressure integrated chip (7) as a dependent variable, and obtaining a curve of the voltage of the pressure unit of the temperature-pressure integrated chip (7) along with the temperature through data fitting; And taking the temperature signal obtained by the thermocouple (1) as a standard temperature, taking the output potential signal of the temperature unit of the temperature-pressure integrated chip (7) as a dependent variable, storing the standard temperature as an independent variable by the upper computer, taking the output potential signal of the temperature unit of the temperature-pressure integrated chip (7) as a dependent variable, and obtaining a curve of the potential of the temperature unit of the temperature-pressure integrated chip (7) along with the temperature through data fitting.

Description

Temperature calibration device and method for testing high-temperature environment temperature-pressure integrated chip Technical Field The invention belongs to the technical field of sensor testing, and particularly relates to a temperature calibration device and a temperature calibration method for testing a temperature-pressure integrated chip in a high-temperature environment. Background The temperature and pressure parameters of key parts such as an aerospace vehicle, an aeroengine and a gas turbine are usually acquired in real time and in situ accurately along with severe environments such as high temperature and high pressure, the basis and the guarantee can be provided for the surface material selection, structural design and protective measures of the aerospace vehicle, and particularly the development of a new generation aeroengine and gas turbine is urgent in temperature and pressure measurement requirements in a high temperature area. However, existing pressure sensor products have difficulty meeting real-time in-situ pressure testing requirements in high temperature environments above 300 ℃. Aiming at the temperature resistance bottleneck of the pressure sensor, a third generation wide bandgap semiconductor silicon carbide is adopted at home and abroad to develop the high temperature resistant pressure sensor, and the highest temperature resistance of the silicon carbide pressure sensor is reported to be 800 ℃. However, such high temperature pressure sensors generate large temperature drift, which affects sensor accuracy, and therefore temperature compensation of the high temperature pressure sensors is necessary. At present, various methods which are widely adopted for temperature compensation of the pressure sensor, including a special chip for temperature compensation, a compensation circuit and the like, cannot bear the temperature of more than 150 ℃, so that the method cannot be integrated with a pressure chip which can work at the temperature of more than 600 ℃, and the accurate acquisition of the temperature of the pressure chip is the premise of ensuring the high-precision output of the pressure sensor, so that a temperature sensing unit is required to be integrated on the pressure chip, and the temperature of the pressure chip is accurately acquired in real time. Chinese patent CN113526452a proposes a chip for on-chip integration of a temperature sensing unit and a high temperature pressure unit and a method for preparing the same, but there is a certain difficulty in accurately obtaining the temperature of the chip in the process of testing and calibrating the temperature-pressure integrated chip in a high temperature environment. In the existing pressure sensor test calibration, a plurality of points are generally selected at equal intervals in a pressure range and a temperature range to calibrate the pressure and the temperature, but the temperature resistance of the pressure sensor is not more than 300 ℃, the temperature environment is built through a high-low temperature experiment box or an oven, and the temperature is low and the temperature range is small. For a high-temperature pressure temperature integrated sensor chip with the temperature resistance of more than 600 ℃, a high-temperature furnace is necessary to be used for building a high-temperature environment, the temperature is high, the temperature range is wide, the temperature control precision of the high-temperature furnace is limited, the display temperature on a panel is not consistent with the actual temperature, the problem of uneven temperature field distribution exists in the high-temperature furnace, the temperature of the pressure sensing part of the temperature pressure integrated chip is greatly different from the temperature displayed by the high-temperature furnace, the temperature measurement of the high-temperature pressure temperature integrated chip is inaccurate under the conditions, the temperature calibration and the pressure precision compensation of the temperature pressure integrated sensor are unreliable, and the measurement precision of the sensor cannot be effectively improved. Disclosure of Invention The invention provides a temperature calibration device and a temperature calibration method for testing a temperature-pressure integrated chip in a high-temperature environment, which can resist high temperature of 600 ℃ and above in air, can calibrate the temperature of 600 ℃ and above in the high-temperature environment, accurately acquire temperature parameters of the temperature-pressure integrated chip pressure sensing part in the high-temperature environment, and realize temperature calibration of a temperature unit and compensation of zero-pressure temperature drift of a pressure unit. The temperature calibration device for the high-temperature environment temperature and pressure integrated chip test comprises a thermocouple, a fixing device and a signal collector, wherein the fixing