CN-115754646-B - IGBT device dynamic characteristic parameter extraction method, storage medium and electronic equipment

CN115754646BCN 115754646 BCN115754646 BCN 115754646BCN-115754646-B

Abstract

The embodiment of the invention provides an IGBT device dynamic characteristic parameter extraction method, a storage medium and electronic equipment. The method comprises the steps of selecting and traversing a target folder to obtain the number of double-pulse test waveform files, reading a double-pulse test waveform file, identifying physical quantities tested by different test channels in the double-pulse test waveform file, identifying a switching process of an IGBT device in the double-pulse test waveform file based on the identified physical quantities, extracting dynamic characteristic parameters of the IGBT device and calculating switching loss based on the identified physical quantities and the switching process, stopping reading if the double-pulse test waveform file is the last double-pulse test waveform file in the target folder, and otherwise, continuing to execute the step of reading the double-pulse test waveform file. According to the invention, an original manual stuck point reading method is improved, the processing of double-pulse test waveform files and the extraction of dynamic characteristic parameters of IGBT devices are carried out in batches, and the working efficiency is greatly improved.

Inventors

ZHANG RONG
XIE SHUNMENG
TIAN WEI
LIU JIE
Rong Chunhui
TAN YIFAN

Assignees

中车株洲电力机车研究所有限公司

Dates

Publication Date: 20260512
Application Date: 20210902

Claims (11)

1. The method for extracting the dynamic characteristic parameters of the IGBT device is characterized by comprising the following steps of: Selecting and traversing the target folders according to different requirements to obtain the number of double-pulse test waveform files, wherein the double-pulse test waveform files refer to double-pulse test waveform files obtained by carrying out double-pulse test on IGBT devices of different types, and the double-pulse test waveform files of the IGBT devices of different types are respectively placed in different folders; Reading a double-pulse test waveform file; identifying physical quantities tested by different test channels in the double-pulse test waveform file, wherein the physical quantities comprise terminal voltage and collector current of an IGBT device and terminal voltage and current of a freewheel diode, and placing the physical quantities into a specified array; the physical quantity identification of different test channels in the double-pulse test waveform file is realized through feature matching, wherein the physical quantity identification comprises the steps of finding out a gate signal of an IGBT device according to an average value of the physical quantity tested by each test channel, positioning four switch action points through zero crossing of the gate signal, and identifying according to the terminal voltage and collector current of the IGBT device and the characteristics of the terminal voltage and current of a follow current diode, wherein the four switch action points comprise action points of two-time opening and two-time closing; identifying a switching process of the IGBT device in the double-pulse test waveform file based on the identified physical quantity; Based on the identified physical quantity and the switching process, extracting dynamic characteristic parameters of the IGBT device and calculating switching loss; If the double pulse test waveform file is the last double pulse test waveform file in the target folder, stopping reading, otherwise, continuing to execute the step of reading the double pulse test waveform file.
2. The method of extracting dynamic characteristic parameters of IGBT device according to claim 1, further comprising smoothing said double pulse test waveform file before said identifying physical quantities tested by different test channels in said double pulse test waveform file.
3. The method for extracting dynamic characteristic parameters of an IGBT device according to claim 2, wherein smoothing the double pulse test waveform file includes: and carrying out average filtering processing on the double-pulse test waveform file for preset times so as to filter interference signals under the condition of keeping the original form of the double-pulse test waveform.
4. The method for extracting dynamic characteristic parameters of IGBT device according to claim 1, wherein before extracting dynamic characteristic parameters of IGBT device and calculating switching loss based on the identified physical quantity and switching process, further comprising performing data calibration on the double pulse test waveform file.
5. The method for extracting dynamic characteristic parameters of an IGBT device according to claim 4, wherein the performing data calibration on the double pulse test waveform file includes: And subtracting the average value of the probe in the zero point area from the test data of the identified switching process to obtain the test data of the switching process after calibration.
6. The method for extracting dynamic characteristic parameters of an IGBT device according to claim 1, wherein the extracting dynamic characteristic parameters of the IGBT device and calculating switching losses based on the identified physical quantity and switching process comprises: Calculating dynamic characteristic parameters according to the definition of the dynamic characteristic parameters according to the identified physical quantity and the switching process; And calculating the switching loss by adopting an integral accumulation mode.
7. The IGBT device dynamic characteristic parameter extraction method according to any one of claims 1 to 6, characterized in that the dynamic characteristic parameter includes at least one of: opening speed; A turn-off speed; Turning off the overvoltage; Switching loss, and The diode reverse recovery parameter.
8. The IGBT device dynamic characteristic parameter extraction method according to claim 1, further comprising: storing waveforms corresponding to the numerical range taken in the calculation process of the switching loss of each dynamic characteristic parameter of the IGBT device in a picture form; And after the reading is stopped, storing the dynamic characteristic parameters and the switching loss of the IGBT device in a target folder in an xls format.
9. An IGBT device dynamic characteristic parameter extraction device, comprising: the acquisition module is used for selecting and traversing the target folders according to different requirements to acquire the number of double-pulse test waveform files, wherein the double-pulse test waveform files refer to double-pulse test waveform files obtained by carrying out double-pulse test on different types of IGBT devices, and the double-pulse test waveform files of the different types of IGBT devices are respectively placed in different folders; The reading module is used for reading a double-pulse test waveform file; The first identification module is used for identifying physical quantities tested by different test channels in the double-pulse test waveform file, including terminal voltage and collector current of an IGBT device and terminal voltage and current of a freewheel diode, and placing the physical quantities into a specified array; the physical quantity identification of different test channels in the double-pulse test waveform file is realized through feature matching, wherein the physical quantity identification comprises the steps of finding out a gate signal of an IGBT device according to an average value of the physical quantity tested by each test channel, positioning four switch action points through zero crossing of the gate signal, and identifying according to the terminal voltage and collector current of the IGBT device and the characteristics of the terminal voltage and current of a follow current diode, wherein the four switch action points comprise action points of two-time opening and two-time closing; the second identification module is used for identifying the switching process of the IGBT device in the double-pulse test waveform file based on the identified physical quantity; The extraction module is used for extracting dynamic characteristic parameters of the IGBT device and calculating switching loss based on the identified physical quantity and the switching process; the judging module is used for judging whether the double-pulse test waveform file is the last double-pulse test waveform file in the target folder, stopping reading if the double-pulse test waveform file is the last double-pulse test waveform file in the target folder, and continuously reading the next double-pulse test waveform file by the reading module if the double-pulse test waveform file is the last double-pulse test waveform file in the target folder.
10. A storage medium having stored thereon a computer program which, when executed by one or more processors, implements the IGBT device dynamic characteristic parameter extraction method according to any one of claims 1 to 8.
11. An electronic device comprising a memory and a processor, the memory having stored thereon a computer program which, when executed by the processor, implements the IGBT device dynamic characteristic parameter extraction method according to any one of claims 1 to 8.

Description

IGBT device dynamic characteristic parameter extraction method, storage medium and electronic equipment Technical Field The present invention relates to the field of IGBT technologies, and in particular, to a method for extracting dynamic characteristic parameters of an IGBT device, a storage medium, and an electronic device. Background The dynamic characteristics of the IGBT (insulated gate bipolar transistor, isolated Gate Bipolar Transistor) device are important indexes in the application process, not only relate to the safe working area of the IGBT device, but also comprise the loss condition of the IGBT device under the current working condition, and the like, the current commonly used dynamic characteristic measurement method is a double pulse test, the waveform of the switching process of the IGBT device can be measured by the method, on the basis, the switching speed, the switching loss, the diode reverse recovery parameter and the like of the IGBT device can be read through the manual clamping point, but as the application requirements of the IGBT device are further improved (the change trend of the loss about current is measured if the requirement is met), the number of test waveforms is continuously increased, the parameters of the IGBT device to be read are more careful, the processing of the test waveforms cannot be efficiently completed by adopting the original manual reading method, and in addition, the external interference in the test process and the test noise of the probe can also have a certain influence on the final parameter extraction result. The dynamic characteristics of the IGBT device are important technical indexes for the application of the IGBT device, such as safe operating area (RBSOA, RRSOA), switching loss (E on、Eoff), switching speed (di/dt, dv/dt), etc., if the IGBT device exceeds the safe operating area during continuous operation, there is a risk of failure due to excessive electric stress, and excessive switching loss combined with high switching frequency is also easy to cause overheating failure, so that accurate assessment of the dynamic characteristics of the IGBT device is crucial for the device application. The current commonly used IGBT device characteristic extraction method is a double-pulse chopping test, the switching waveform of the IGBT device at a specific current point can be obtained through the method, then the safe working area parameters and the loss condition of the IGBT device under the working condition can be read through a manual oscilloscope clamping point, but the working current of the IGBT device is usually in a range, which means that a plurality of current points need to be tested when the double-pulse test is carried out, the drive parameters, the temperature and the installation position are considered in the application of the IGBT device, the measurement data are multiplied, the workload of manually extracting the dynamic characteristic parameters of the IGBT device is large, the efficiency is lower, the measurement error of a measuring tool and the subjectivity of the manual work are reduced, and the reliability of the test result is reduced. Disclosure of Invention In order to solve the problems, the embodiment of the invention provides an IGBT device dynamic characteristic parameter extraction method, a storage medium and electronic equipment. In a first aspect, an embodiment of the present invention provides a method for extracting dynamic characteristic parameters of an IGBT device, including: selecting and traversing the target folder to obtain the number of double-pulse test waveform files; Reading a double-pulse test waveform file; Identifying physical quantities tested by different test channels in the double-pulse test waveform file; identifying a switching process of the IGBT device in the double-pulse test waveform file based on the identified physical quantity; Based on the identified physical quantity and the switching process, extracting dynamic characteristic parameters of the IGBT device and calculating switching loss; If the double pulse test waveform file is the last double pulse test waveform file in the target folder, stopping reading, otherwise, continuing to execute the step of reading the double pulse test waveform file. In some embodiments, before the physical quantity tested by the different test channels in the double-pulse test waveform file is identified, smoothing filtering processing is further performed on the double-pulse test waveform file. In some embodiments, the smoothing filter processing the double pulse test waveform file includes: and carrying out average filtering processing on the double-pulse test waveform file for preset times so as to filter interference signals under the condition of keeping the original form of the double-pulse test waveform. In some embodiments, the method further comprises data calibration of the double pulse test waveform file before extracting dynamic characteristic p