CN-115799051-B - Semiconductor structure, forming method thereof and electronic component

CN115799051BCN 115799051 BCN115799051 BCN 115799051BCN-115799051-B

Abstract

The invention discloses a semiconductor structure, a forming method thereof and an electronic component, wherein the forming method of the semiconductor structure comprises the steps of providing a semiconductor substrate, and forming a mask layer comprising an SOG material layer, a SiON material layer and an SOC material layer on the surface of the semiconductor substrate; a photoresist layer is formed on a surface of the mask layer. According to the invention, the mask layer comprising the SOG material layer, the SiON material layer and the SOC material layer is added between the photoresist and the silicon wafer, the mask layer is etched by taking one layer of photoresist as a mask, the target pattern on the photoresist is transferred to the mask layer, and then the silicon wafer is etched by utilizing the etching resistance of the mask layer, so that the high resolution of the target pattern is maintained in the process, and the etching resistance is improved without increasing the film thickness of the photoresist.

Inventors

HUANG YONGFA
QIU JIEZHEN
YAN TIANCAI

Assignees

青岛物元技术有限公司

Dates

Publication Date: 20260505
Application Date: 20221206

Claims (5)

1. A method of forming a semiconductor structure, comprising: s1, providing a semiconductor substrate; s2, forming a mask layer comprising an SOG material layer, a SiON material layer and an SOC material layer on the surface of the semiconductor substrate, forming an SOG material layer on the surface of the semiconductor substrate, forming a SiON material layer on the surface of the SOG material layer, and forming an SOC material layer on the surface of the SiON material layer; S3, forming a photoresist layer on the surface of the mask layer, wherein the thickness of the photoresist layer is 1.2-5 mu m; s4, forming a target pattern on the photoresist layer through a photoetching process; S5, etching the mask layer by taking the photoresist layer as a mask so as to transfer the target pattern to the mask layer; s6, removing the photoresist layer; S7, etching the semiconductor substrate by taking the mask layer as a mask, and etching the target pattern on the semiconductor substrate; and S8, removing the mask layer after etching the target pattern on the semiconductor substrate.
2. A method of forming a semiconductor structure, comprising: s1, providing a semiconductor substrate, S2, forming a mask layer comprising an APF material layer and an SOC material layer on the surface of the semiconductor substrate, forming an APF material layer on the surface of the semiconductor substrate, and forming an SOC material layer on the surface of the APF material layer; S3, forming a photoresist layer on the surface of the mask layer, wherein the thickness of the photoresist layer is 1.2-5 mu m; s4, forming a target pattern on the photoresist layer through a photoetching process; S5, etching the mask layer by taking the photoresist layer as a mask so as to transfer the target pattern to the mask layer; s6, removing the photoresist layer; S7, etching the semiconductor substrate by taking the mask layer as a mask, and etching the target pattern on the semiconductor substrate; and S8, removing the mask layer after etching the target pattern on the semiconductor substrate.
3. A method of forming a semiconductor structure, comprising: s1, providing a semiconductor substrate, S2, forming a mask layer comprising an SOG material layer and an SOC material layer on the surface of the semiconductor substrate, forming an SOG material layer on the surface of the semiconductor substrate, and forming an SOC material layer on the surface of the SOG material layer; S3, forming a photoresist layer on the surface of the mask layer, wherein the thickness of the photoresist layer is 1.2-5 mu m; s4, forming a target pattern on the photoresist layer through a photoetching process; S5, etching the mask layer by taking the photoresist layer as a mask so as to transfer the target pattern to the mask layer; s6, removing the photoresist layer; S7, etching the semiconductor substrate by taking the mask layer as a mask, and etching the target pattern on the semiconductor substrate; and S8, removing the mask layer after etching the target pattern on the semiconductor substrate.
4. A semiconductor structure formed by the method of forming a semiconductor structure as claimed in any one of claims 1 to 3.
5. An electronic component, which is characterized in that, the electronic component comprises the semiconductor structure of claim 4.

Description

Semiconductor structure, forming method thereof and electronic component Technical Field The present disclosure relates to semiconductor technology, and more particularly, to a semiconductor structure, a method for forming the semiconductor structure, and an electronic device. Background Photolithography refers to the technique of transferring a pattern on a reticle to a substrate by means of a photoresist (also known as photoresist) under the influence of light. The method comprises irradiating ultraviolet light through a mask onto the surface of a substrate with a photoresist film to cause chemical reaction of photoresist in the exposed region, dissolving and removing photoresist in the exposed region or non-exposed region (the former is called positive photoresist and the latter is called negative photoresist) by developing technique to copy the pattern on the mask onto the photoresist film, and transferring the pattern onto the substrate by etching technique. Therefore, the photoresist is required to have high resolution and high corrosion resistance in the etching process, and when a silicon wafer with the thickness of 3 mu m is etched, if the thickness of the photoresist is too small, the photoresist layer is easily excessively consumed in the subsequent process of etching the silicon wafer, so that the photoresist layer cannot have a blocking effect in the etching process, and the structural performance of a semiconductor is affected. In order to make the photoresist resist etching, the film thickness of the photoresist can be increased or the C content of the photoresist can be increased, but the pattern resolution can be reduced by the method, smaller patterns cannot be resolved, namely, the etching resistance and the high resolution of the photoresist cannot meet the requirements at the same time. Disclosure of Invention The invention provides a semiconductor structure, a forming method thereof and an electronic component aiming at the technical problem that the etching resistance and high resolution of the existing photoresist layer cannot meet the requirements at the same time. In a first aspect, an embodiment of the present application provides a method for forming a semiconductor structure, including: s1, providing a semiconductor substrate; S2, forming a mask layer comprising an SOG material layer, a SiON material layer and an SOC material layer on the surface of the semiconductor substrate; s3, forming a photoresist layer on the surface of the mask layer; s4, forming a target pattern on the photoresist layer through a photoetching process; S5, etching the mask layer by taking the photoresist layer as a mask so as to transfer the target pattern to the mask layer; s6, removing the photoresist layer; S7, etching the semiconductor substrate by taking the mask layer as a mask, and etching the target pattern on the semiconductor substrate; and S8, removing the mask layer after etching the target pattern on the semiconductor substrate. The method for forming the semiconductor structure, wherein the thickness of the photoresist layer is 1.2 mu m to 5 mu m. In a second aspect, an embodiment of the present application provides a method for forming a semiconductor structure, including: s1, providing a semiconductor substrate, S2, forming a mask layer comprising an APF material layer and an SOC material layer on the surface of the semiconductor substrate; s3, forming a photoresist layer on the surface of the mask layer; s4, forming a target pattern on the photoresist layer through a photoetching process; S5, etching the mask layer by taking the photoresist layer as a mask so as to transfer the target pattern to the mask layer; s6, removing the photoresist layer; S7, etching the semiconductor substrate by taking the mask layer as a mask, and etching the target pattern on the semiconductor substrate; and S8, removing the mask layer after etching the target pattern on the semiconductor substrate. The method for forming a semiconductor structure, wherein the step S2 includes: s21, forming an APF material layer on the surface of the semiconductor substrate; And S22, forming an SOC material layer on the surface of the APF material layer. The method for forming the semiconductor structure, wherein the thickness of the photoresist layer is 1.2 mu m to 5 mu m. In a third aspect, an embodiment of the present application provides a method for forming a semiconductor structure, including: s1, providing a semiconductor substrate, S2, forming a mask layer comprising an SOG material layer and an SOC material layer on the surface of the semiconductor substrate; s3, forming a photoresist layer on the surface of the mask layer; s4, forming a target pattern on the photoresist layer through a photoetching process; S5, etching the mask layer by taking the photoresist layer as a mask so as to transfer the target pattern to the mask layer; s6, removing the photoresist layer; S7, etching the semiconductor substrate by taking t