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CN-115938972-B - Semiconductor chamber and semiconductor processing equipment

CN115938972BCN 115938972 BCN115938972 BCN 115938972BCN-115938972-B

Abstract

The invention discloses a semiconductor chamber and semiconductor process equipment, wherein the semiconductor chamber comprises a first chamber body, an isolation valve, a temperature control assembly, a first bearing part and a second bearing part, the isolation valve is arranged in the first chamber body, the isolation valve separates the inner cavity of the first chamber body to form at least two process chambers, the first chamber body is provided with a wafer transmission port, the wafer transmission port is communicated with one process chamber of the at least two process chambers, each process chamber is internally provided with the temperature control assembly, the temperature control effects of the two temperature control assemblies in the two adjacent process chambers are different, the first bearing part and the second bearing part are respectively positioned in the two adjacent process chambers, and under the condition that the isolation valve between the two adjacent process chambers is opened, the first bearing part can move into the process chamber where the second bearing part is positioned, and wafers can be transferred between the first bearing part and the second bearing part. The scheme can solve the problem of insufficient productivity of semiconductor process equipment.

Inventors

  • HU YUNLONG

Assignees

  • 北京北方华创微电子装备有限公司

Dates

Publication Date
20260512
Application Date
20210818

Claims (9)

  1. 1. A semiconductor chamber, comprising: the device comprises a first chamber body (110) and an isolation valve (200), wherein the isolation valve (200) is arranged in the first chamber body (110), the isolation valve (200) separates the inner cavity of the first chamber body (110) to form at least two process chambers (111), the first chamber body (110) is provided with a wafer transmission port, and the wafer transmission port is communicated with one process chamber (111) of the at least two process chambers (111); the temperature control assemblies (300) are arranged in each process cavity (111), and the temperature control effects of the two temperature control assemblies (300) in the two adjacent process cavities (111) are different; A first bearing part (410) and a second bearing part (420), wherein the first bearing part (410) and the second bearing part (420) are respectively positioned in two adjacent process chambers (111), and when the isolation valve (200) between the two adjacent process chambers (111) is opened, the first bearing part (410) can move into the process chamber (111) where the second bearing part (420) is positioned, and the wafer (700) can be transferred between the first bearing part (410) and the second bearing part (420); when the isolation valve (200) is closed, the process cavity (111) where the first bearing part (410) is located and the process cavity (111) where the second bearing part (420) is located are isolated, wherein one of the two adjacent process cavities (111) is a heating cavity, and the other is a cooling cavity; The first chamber body (110) comprises at least two chamber parts (112), the chamber parts (112) are provided with through holes (1121), the through holes (1121) of two adjacent chamber parts (112) are oppositely arranged, an assembly gap (1122) is arranged between the two adjacent chamber parts (112), and the isolation valve (200) is positioned in the assembly gap (1122) and between the two opposite through holes (1121); After the wafer (700) is processed, the wafer is firstly transmitted to the process chamber (111) where the first bearing part (410) is located for temperature control, then the isolation valve (200) is opened, and the first bearing part (410) transmits the wafer (700) to the process chamber (111) where the second bearing part (420) is located for temperature control.
  2. 2. The semiconductor chamber according to claim 1, further comprising at least two first pumping lines (510), the first pumping lines (510) being in communication with one of the process chambers (111), the first pumping lines (510) being for communicating the process chambers (111) with a vacuum controller, the first pumping lines (510) being provided with first valves (511), the first valves (511) controlling the vacuum controller to be in communication with or disconnected from the process chambers (111).
  3. 3. The semiconductor chamber according to claim 2, characterized in that the semiconductor chamber further comprises at least two process gas lines (610), the process gas lines (610) being in communication with one of the process chambers (111), the process chambers (111) being in communication with a process gas source via the process gas lines (610), the process gas lines (610) being provided with a line valve (620), the line valve (620) controlling the process gas source to be in communication with or disconnected from the process chambers (111).
  4. 4. The semiconductor chamber according to claim 1, further comprising a second chamber body (120) and a second pumping line (520), wherein the first chamber body (110) is located in the second chamber body (120) and is disposed at an interval therebetween, an inner cavity of the second chamber body (120) is communicated with the second pumping line (520), the second pumping line (520) is used for communicating the inner cavity of the second chamber body (120) with a vacuum controller, the second pumping line (520) is provided with a second valve (521), and the second valve (521) controls the vacuum controller to be communicated with or disconnected from the inner cavity of the second chamber body (120).
  5. 5. The semiconductor chamber according to claim 1, wherein the second carrying portion (420) comprises a plurality of sub-carrying portions uniformly arranged in a circumferential direction of an inner wall of the corresponding process chamber (111) for forming a carrying surface for carrying the wafer (700), each of the sub-carrying portions comprises a fixing portion (421) and a telescopic portion (422), wherein the fixing portion (421) is detachably connected with the corresponding inner wall of the process chamber (111), and the telescopic portion (422) is telescopically movable along the fixing portion (421).
  6. 6. The semiconductor chamber according to claim 1, further comprising a detection element and a control element, the detection element being in control connection with the control element, the detection element being arranged in the process chamber (111) in which the first carrier (410) is located, the detection element being adapted to detect a distance of the first carrier (410) from the isolation valve (200); when the distance between the first bearing part (410) and the isolation valve (200) is greater than or equal to a preset safety switch distance, the control element controls the isolation valve (200) to be opened or closed.
  7. 7. The semiconductor chamber of claim 1, wherein the isolation valve (200) is a pneumatic control valve, the semiconductor chamber comprising a vent line in communication with the isolation valve (200), the vent line venting or de-venting to control the isolation valve to open or close.
  8. 8. The semiconductor chamber of claim 7, wherein the vent line comprises a first vent line and a second vent line, each in communication with the isolation valve (200); The isolation valve (200) is opened when the first ventilation line is ventilated and the second ventilation line is open; The isolation valve (200) is closed with the first vent line being de-aerated and the second vent line being vented.
  9. 9. A semiconductor processing apparatus comprising a first process chamber and a second process chamber, the second process chamber being the semiconductor chamber of any one of claims 1 to 8, the number of first process chambers and the number of second process chambers being a plurality, the plurality of first process chambers and the plurality of second process chambers being spaced apart, a wafer (700) of each of the first process chambers being transportable into the second process chamber that is idle.

Description

Semiconductor chamber and semiconductor processing equipment Technical Field The present disclosure relates to semiconductor chip manufacturing, and more particularly, to a semiconductor chamber and a semiconductor processing apparatus. Background In the related art, a heating chamber, a cooling chamber, a CVD (Chemical Vapor Deposition, vapor deposition) chamber, and other process chambers are provided in the semiconductor process apparatus. In the process of processing wafers in semiconductor processing equipment, after the wafers are processed in a CVD chamber, the wafers need to be transferred into a heating chamber for heat treatment. And after the heating is finished, the wafer is conveyed into a cooling chamber for cooling, so that the wafer is subjected to an annealing process. When there is no wafer being processed in the heating chamber or the cooling chamber, the wafer may be transferred into the heating chamber or the cooling chamber. When wafers are being processed in the heating chamber or the cooling chamber, wafers from a previous process need to be transferred after wafers in a process chamber from a next process have been processed. Because the process chambers have single functions, each process chamber can only realize one process type, so that the processing time of the whole wafer is prolonged, and the productivity of semiconductor process equipment is seriously affected. In the related art, the number of process chambers through which the transfer chamber can communicate in the semiconductor process apparatus has been determined, so that increasing the number of one or more process chambers tends to decrease the number of another one or more process chambers while the total number of process chambers remains unchanged. The problem of insufficient throughput of semiconductor processing equipment cannot be addressed by increasing the number of one or more process chambers. Disclosure of Invention The invention discloses a semiconductor chamber and semiconductor process equipment, which are used for solving the problem of insufficient productivity of the semiconductor process equipment. In order to solve the problems, the invention adopts the following technical scheme: A semiconductor chamber, comprising: The device comprises a first chamber body and an isolation valve, wherein the isolation valve is arranged in the first chamber body, the isolation valve separates the inner cavity of the first chamber body to form at least two process chambers, the first chamber body is provided with a wafer transmission port, and the wafer transmission port is communicated with one process chamber of the at least two process chambers; the temperature control assemblies are arranged in each process cavity, and the temperature control effects of the two temperature control assemblies in the two adjacent process cavities are different; The wafer transfer device comprises a first bearing part and a second bearing part, wherein the first bearing part and the second bearing part are respectively positioned in two adjacent process cavities, and under the condition that an isolation valve between the two adjacent process cavities is opened, the first bearing part can move to the process cavity where the second bearing part is positioned, and the wafer can be transferred between the first bearing part and the second bearing part. The semiconductor process equipment comprises a first process chamber and a second process chamber, wherein the second process chamber is the semiconductor chamber, the number of the first process chamber and the number of the second process chamber are multiple, the first process chambers and the second process chambers are distributed at intervals, and a wafer of each first process chamber can be transmitted into the idle second process chamber. The technical scheme adopted by the invention can achieve the following beneficial effects: In the semiconductor chamber disclosed by the invention, the inner cavity of the first chamber body is divided into at least two process chambers through the isolation valve, each process chamber is internally provided with the temperature control assembly, and the temperature control effects of the temperature control assemblies in the two adjacent process chambers are different, that is, one semiconductor chamber can be compatible with at least two process chambers with different temperature control effects, for example, heating or cooling can be respectively realized. That is, one semiconductor chamber can be compatible for performing at least two different processes, so that the number of the process chambers performing different processes is increased without changing the total number of the process chambers, thereby improving the productivity of the semiconductor process apparatus. Drawings The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this speci