CN-115988932-B - Quantum dot hybrid integrated multicolor display and manufacturing method thereof

CN115988932BCN 115988932 BCN115988932 BCN 115988932BCN-115988932-B

Abstract

The invention discloses a quantum dot hybrid integrated multicolor display, which comprises a CMOS wafer substrate, an anode via hole, a light-emitting unit, a filling layer and cover glass, wherein a tungsten hole is arranged in the CMOS wafer substrate, the anode via hole is electrically connected with a CMOS wafer driving circuit through the tungsten hole, the anode via hole is connected to the surface of the CMOS wafer substrate in a penetrating way, the light-emitting unit is arranged on the surface of the anode via hole on the CMOS wafer substrate, a driving current signal is provided for the light-emitting unit through the anode via hole, the filling layer is formed by OC glue and is coated on the surfaces of the CMOS wafer substrate and the light-emitting unit, and the cover glass is covered to seal the whole device. The quantum dot hybrid integrated multicolor display has the advantages of simple structure, convenient use, high manufacturing yield and good luminous effect, and solves the problem of colorization of micro-LEDs and the short-board technology with immature service life and efficiency of quantum dots blue light by adopting the method of combining quantum dots with blue light LEDs. A method of manufacturing a quantum dot hybrid integrated multicolor display is also disclosed.

Inventors

WANG SHIWEI
Zheng Benpei
LIU CHENGYUAN
FENG LUYANG
LIU SHENGFANG
ZHAO ZHENGTAO

Assignees

安徽熙泰智能科技有限公司

Dates

Publication Date: 20260505
Application Date: 20230131

Claims (6)

1. The quantum dot hybrid integrated multicolor display is characterized by comprising a CMOS wafer substrate (1), an anode via hole (2) and a light-emitting unit, wherein a tungsten hole is formed in the CMOS wafer substrate (1), the anode via hole (2) is arranged in the CMOS wafer substrate (1), the anode via hole (2) is electrically connected with a driving circuit in the CMOS wafer substrate (1) through the tungsten hole, the anode via hole (2) is connected to the surface of the CMOS wafer substrate in a penetrating way, the surface of the anode via hole (2) on the CMOS wafer substrate (1) is provided with the light-emitting unit, a driving current signal is provided for the light-emitting unit through the anode via hole (2), the light-emitting unit comprises an LED blue light-emitting unit (3), a quantum dot first light-emitting unit (4) and a quantum dot second light-emitting unit (5), the upper surface of the LED blue light-emitting unit (3) is deposited with a transparent cathode layer, the length of the reflecting layer (11) is smaller than that of the LED blue light-emitting unit (3), the length of the reflecting layer (11) is smaller than that of the quantum dot first light-emitting unit (4) and the quantum dot second light-emitting unit (5) are respectively arranged on the surface of the CMOS wafer (1) and the quantum dot first light-emitting unit (4) and the quantum dot second light-emitting unit (5).
2. The quantum dot hybrid integrated multicolor display of claim 1, wherein the quantum dot first light-emitting unit (4) is set to emit green light, the quantum dot second light-emitting unit (5) is set to emit red light, or the quantum dot first light-emitting unit (4) is set to emit red light, the quantum dot second light-emitting unit (5) is set to emit green light, or only the quantum dot first light-emitting unit (4) and the LED blue light-emitting unit (3) are set to jointly form a two-color light-emitting unit, the quantum dot first light-emitting unit (4) emits green light or red light, or only the quantum dot second light-emitting unit (5) and the LED blue light-emitting unit (3) are set to jointly form a two-color light-emitting unit, and the quantum dot second light-emitting unit (5) emits green light or red light.
3. The quantum dot hybrid integrated multicolor display of claim 2 wherein the quantum dot first light emitting unit (4) comprises a first light emitting unit anode (401), a first light emitting unit hole injection layer (402), a first light emitting unit hole transport layer (403), a quantum dot first light emitting layer (404), a first light emitting unit electron transport layer (405) and a first light emitting unit cathode layer (406) which are sequentially arranged from bottom to top, and the quantum dot second light emitting unit (5) comprises a second light emitting unit anode (501), a second light emitting unit hole injection layer (502), a second light emitting unit hole transport layer (503), a quantum dot second light emitting layer (504), a second light emitting unit electron transport layer (505) and a second light emitting unit cathode layer (506) which are sequentially arranged from bottom to top.
4. The quantum dot hybrid integrated multicolor display of claim 3, wherein the CMOS wafer substrate (1) is provided with an LED blue light-emitting unit (3) on the surface of the anode via hole (2), a passivation layer is deposited on the side wall of the LED blue light-emitting unit (3) through PECVD or ALD, the quantum dot first light-emitting unit (4) and the quantum dot second light-emitting unit (5) are arranged on the upper part of the LED blue light-emitting unit (3), and a space is arranged between the quantum dot first light-emitting unit (4) and the quantum dot second light-emitting unit (5).
5. The quantum dot hybrid integrated multicolor display of claim 4, wherein an LED blue light emitting unit cathode (10) is deposited on the upper surface of the periphery of the LED blue light emitting unit (3), reflecting lenses (8) are respectively arranged on the left side and the right side of the LED blue light emitting unit (3), transparent conductive film ITO is deposited on the whole CMOS wafer substrate (1) and the quantum dot first light emitting unit (4), the quantum dot second light emitting unit (5) and the LED blue light emitting unit cathode (10) to serve as a common cathode, and one or more metal layers in metal Mg, ag, au, al, cu, cr, ti are deposited on the surface of the transparent conductive film ITO between the quantum dot first light emitting unit (4) and the quantum dot second light emitting unit (5) to form one or more metal layers to form an interconnection electrode.
6. A manufacturing method of a quantum dot hybrid integrated multicolor display is characterized in that: a quantum dot hybrid integrated multicolor display based on claim 4 or 5, wherein the manufacturing method comprises the steps of: the method comprises the steps of S1, providing a CMOS wafer substrate (1) and a blue light LED epitaxial wafer, carrying out metal bonding on the CMOS wafer and the blue light LED epitaxial wafer, removing the LED epitaxial wafer substrate, carrying out pixel patterning through photoetching and etching processes to form a silicon-based CMOS wafer with a blue light-emitting unit (3), etching the metal on the surface of the CMOS wafer through an IBE process, only leaving the metal on the blue light-emitting unit (3) of the LED, depositing 500nm thick SiO 2 on the side wall of the blue light-emitting unit (3) through ALD or PECVD, and forming a first passivation layer through photoetching and dry etching processes; S2, depositing one or more metals in Mg, ag, au, al, cu, cr, ti, ni with the wavelength of 50-1000nm on the upper surface of the LED blue light-emitting unit (3) through sputer to serve as a transparent cathode layer of the LED blue light-emitting unit (3); S3, one or more of DBR, ODR, mg, ag, au, al, cu, cr, ti, ni are deposited on the surface of the transparent cathode layer to serve as a reflecting layer (11), and the length of the reflecting layer (11) is 0.5-30um lower than the length of the LED blue light-emitting unit (3) after yellow light and etching treatment; S4, respectively arranging reflecting lenses (8) on the left side and the right side of the LED blue light-emitting unit (3); S5, when light emitted by the LED blue light-emitting unit is reflected between the anode of the LED blue light-emitting unit and the reflecting layer (11) until the light is transmitted to the surface of the reflecting lens (8), the reflecting lens (8) can parallelly emit the incident light out of the upper surface; S6, manufacturing 50-100nmSiO 2 on the surface of the reflecting layer (11) by adopting PECVD, yellow light and etching processes; S7, depositing one or more metals of Mg, ag, au, al, cu, cr, ti, ni-2 um on the upper surface of a peripheral cathode layer of the LED blue light unit through yellow light, deposition, etching and other processes to form an LED blue light emitting unit cathode (10); S8, depositing one or more of Mg, ag, au, al, cu, cr, ti, ni with 0.5-2um on the surface of SiO 2 through yellow light, deposition, etching and the like to respectively manufacture anodes of a quantum dot first light-emitting unit (4) and a quantum dot second light-emitting unit (5), wherein the anodes of the quantum dot first light-emitting unit (4) and the quantum dot second light-emitting unit (5) are respectively connected with tungsten holes on two sides of an LED blue light-emitting unit (3); S9, depositing SiO 2 with the thickness of 500nm by ALD or PECVD, forming SiO 2 layers at the anode positions of the first light-emitting unit (4) and the second light-emitting unit (5) of the quantum dots by photoetching and dry etching processes, and only covering the positions except the first light-emitting unit (4) and the second light-emitting unit (5) of the quantum dots; S10, depositing PEDOT: PSS on the anode surfaces of a first quantum dot light-emitting unit (4) and a second quantum dot light-emitting unit (5) through a solution spin coating method or a vacuum evaporation process to form a hole injection layer with the thickness of 30nm, and manufacturing a first light-emitting unit hole injection layer (402) and a second light-emitting unit hole injection layer (502); s11, depositing TFB on the hole injection layer by using a solution method or a vacuum evaporation process to form a hole transport layer with the thickness of 30nm, and manufacturing a first light-emitting unit hole transport layer (403) and a second light-emitting unit hole transport layer (503); S12, depositing DICTRz CdSe/CdS on the position of the first quantum dot light-emitting unit (4) or the position of the second quantum dot light-emitting unit (5) on the hole transport layer by utilizing a solution method vacuum evaporation process, wherein the wavelength of the red light quantum dot light is 630nm, and forming a quantum dot light-emitting layer with the thickness of 40 nm; s13, depositing CdSe/CdS or InP quantum dots on the position of a quantum dot second light-emitting unit (5) or the position of a quantum dot first light-emitting unit (4) on the hole transport layer by utilizing a solution method vacuum evaporation process, wherein the wavelength of green light is 540nm, and forming a quantum dot light-emitting layer with the thickness of 40 nm; S14, depositing ZnO on the light-emitting layer by a solution method or a vacuum evaporation process to form an electron transport layer with the thickness of 30 nm; S15, depositing a transparent conductive film ITO with the thickness of 20-1000nm on the whole CMOS wafer substrate (1), the quantum dot first light-emitting unit (4), the quantum dot second light-emitting unit (5), the LED blue light-emitting unit cathode (10) and the cathode ring by adopting a sputer process, so that the cathode ring can supply power to the LED blue light-emitting unit (3), the quantum dot first light-emitting unit (4) and the quantum dot second light-emitting unit (5) simultaneously to form a common cathode.

Description

Quantum dot hybrid integrated multicolor display and manufacturing method thereof Technical Field The invention belongs to the technical field of micro display, and particularly relates to a quantum dot hybrid integrated multicolor display and a manufacturing method thereof. Background The micro-display is a visual entrance of a fire-heat 'meta-universe' concept at present, but the main flow technology of the micro-display adopted at present is silicon-based liquid crystal, but the liquid crystal display displays through a switch of the liquid crystal, the response speed is low, and high resolution is difficult to achieve, so that the defects of screen window effect and the like exist, the micro-OLED is difficult to wear and apply to the lead 'meta-universe' for a long time, the micro-OLED, namely the silicon-based OLED technology still has the disadvantages of low brightness, low luminous efficiency and the like although the micro-OLED technology enters a mass production stage at present, and the micro-LED micro-display is considered to be the micro-display which is most suitable for the 'meta-universe' application, but colorization is still a problem which is difficult to overcome at present. Whether applied to conventional display or high-pixel-density micro display, micro-LED micro display has the technical defect that the manufacturing process is complex, so that the product manufacturing yield is low and the micro-LED micro display is not suitable for mass production. According to the search, the Chinese patent publication No. CN201910816511 of 2019-12-13 discloses a display device based on a phase change material and quantum dots, which comprises a display unit, wherein the display unit comprises a multicolor quantum dot backlight source and a phase change filter, the multicolor quantum dot backlight source comprises a substrate and a multicolor quantum dot light emitting component, the multicolor quantum dot light emitting component is arranged on the upper surface of the substrate and is used for emitting polychromatic light, the phase change filter comprises an isolation layer, a first F P resonant cavity, a phase change material layer and a second F P resonant cavity, which are sequentially arranged from bottom to top, voltage is applied to the phase change material layer to perform electric stimulation or laser irradiation to perform laser stimulation, and the change of the transmittance of the phase change material layer during the mutual conversion between an amorphous state and a crystalline state is utilized to filter the polychromatic light emitted by the multicolor quantum dot light emitting component, so that monochromatic light with required wavelength and intensity is obtained, and color display is further realized. However, the service life and efficiency of the blue material in the quantum dot polychromatic light still cannot meet the requirements of industrial cost and performance, and the technical problems cannot be solved. Disclosure of Invention Aiming at the defects existing in the prior art, the invention aims to provide the quantum dot hybrid integrated multicolor display which has the advantages of simple structure, convenient use, high manufacturing yield and good luminous effect, and also provides a manufacturing method of the quantum dot hybrid integrated multicolor display, which has simple process and easy realization. The invention adopts the method of combining quantum dots and blue light LEDs to avoid the difficult problem of micro-LED colorization and the short technical board with immature service life and efficiency of quantum dots blue light. In order to achieve the purpose, the technical scheme of the invention is that the quantum dot hybrid integrated multicolor display comprises a CMOS wafer substrate, an anode via hole and a light-emitting unit, wherein a tungsten hole is arranged in the CMOS wafer substrate, the anode via hole is electrically connected with a driving circuit in the CMOS wafer substrate through the tungsten hole, the anode via hole is connected to the surface of the CMOS wafer substrate in a penetrating way, the light-emitting unit is arranged on the surface of the anode via hole on the CMOS wafer substrate, and a driving current signal is provided for the light-emitting unit through the anode via hole. The quantum dot hybrid integrated multicolor display also comprises a filling layer and cover plate glass, wherein the filling layer is formed by OC glue and is coated on the surfaces of the CMOS wafer substrate and the light-emitting unit, and the cover plate glass is covered to seal the whole device. Further, the light emitting unit comprises an LED blue light emitting unit, a quantum dot first light emitting unit and a quantum dot second light emitting unit, wherein the quantum dot first light emitting unit is set to emit green light, the quantum dot second light emitting unit is set to emit red light, or the quantum dot first light emitting