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CN-116031234-B - Insulating substrate and power module

CN116031234BCN 116031234 BCN116031234 BCN 116031234BCN-116031234-B

Abstract

The invention provides an insulating substrate and a power module, wherein the insulating substrate comprises a metal layer, an insulating layer and a connecting layer, the insulating layer is arranged between the metal layer and the connecting layer, the connecting layer is used for connecting a radiating bottom plate of the power module, the metal layer is provided with an upper bridge arm and a lower bridge arm, the upper bridge arm and the lower bridge arm are used for installing a power chip, and the directions of currents passing through the upper bridge arm and the lower bridge arm are opposite. The power module has the beneficial effect that the stray inductance of the power module can be reduced.

Inventors

  • MENG LIN
  • LI SHULONG
  • FAN ZHIBIN
  • HUANG KAI

Assignees

  • 无锡星驱动力科技有限公司
  • 无锡星驱科技有限公司
  • 浙江吉利控股集团有限公司

Dates

Publication Date
20260505
Application Date
20221213

Claims (8)

  1. 1. The insulation substrate is characterized by comprising a metal layer (1), an insulation layer and a connection layer, wherein the insulation layer is arranged between the metal layer (1) and the connection layer, the connection layer is used for connecting a radiating bottom plate of a power module, the metal layer (1) is provided with an upper bridge arm (101) and a lower bridge arm (102), the upper bridge arm (101) and the lower bridge arm (102) are used for installing a power chip (2), and the current directions of the upper bridge arm (101) and the lower bridge arm (102) are opposite; The upper bridge arm (101) comprises a first arm (111) and a second arm (121) which are arranged side by side, the lower bridge arm (102) comprises a third arm (112) and a fourth arm (122) which are arranged side by side, the third arm (112) and the fourth arm (122) are positioned between the first arm (111) and the second arm (121), the first arm (111), the second arm (121), the third arm (112) and the fourth arm (122) are used for installing the power chip (2), the first arm (111) and the second arm (121) are integrally positioned on the periphery of the metal layer (1), and the third arm (112) and the fourth arm (122) are integrally positioned on the inner side of the metal layer (1); The upper bridge arm (101) further comprises a first connecting part (131), and the first arm (111) and the second arm (121) are connected through the first connecting part (131); The first arm (111) and the third arm (112) are arranged at an adjacent interval, the second arm (121) and the fourth arm (122) are arranged at an adjacent interval, a part of the metal layer (1) between the first arm (111) and the third arm (112) and a part of the metal layer between the second arm (121) and the fourth arm (122) are respectively provided with an upper bridge arm gate contact area (103) and an upper bridge arm source contact area (104), a part of the metal layer (1) between the third arm (112) and the fourth arm (122) is provided with a lower bridge arm gate contact area (105) and a lower bridge arm source contact area (106), the upper bridge arm gate contact area (103) and the lower bridge arm source contact area (105) are used for mounting a gate resistor (3), the upper bridge arm source contact area (104) and the lower bridge arm source contact area (106) are used for connecting the power chip (2), and the upper bridge arm gate contact area (103), the lower bridge arm contact area (105) and the upper bridge arm source contact area (102) are respectively provided with the upper bridge arm (101) and the lower bridge arm contact area (104) in a side-by-side mode.
  2. 2. The insulating substrate according to claim 1, characterized in that the lower leg (102) further comprises a second connection (132), the third arm (112) and the fourth arm (122) being connected by the second connection (132).
  3. 3. The insulating substrate according to claim 1, wherein the first arm (111) and the second arm (121) are disposed axisymmetrically with respect to a calibration reference line, and the third arm (112) and the fourth arm (122) are disposed axisymmetrically with respect to the calibration reference line.
  4. 4. A substrate according to any one of claims 1-3, characterized in that the part of the metal layer (1) located between the upper leg (101) and the lower leg (102) is further provided with a power terminal mounting structure (107), the lower leg (102) being adapted to be in communication with the power terminal mounting structure (107), the ends of the upper leg (101) and the power terminal mounting structure (107) remote from the lower leg (102) being adapted to be provided with power terminals, respectively.
  5. 5. The insulating substrate according to claim 4, wherein the power terminal mounting structure (107) comprises two strip structures (117) and a third connecting portion (127) for connecting the two strip structures (117), the two strip structures (117) are arranged between the third arm (112) and the fourth arm (122) side by side, and the two strip structures (117) are used for being respectively conducted with the third arm (112) and the fourth arm (122), and one end, far away from the lower bridge arm (102), of the third connecting portion (127), the first arm (111) and the second arm (121) is used for respectively mounting a power terminal.
  6. 6. A power module comprising an insulating substrate according to any one of claims 1-5.
  7. 7. The power module according to claim 6, further comprising a power chip (2), wherein a plurality of the power chips (2) are disposed at an upper bridge arm (101) of the insulating substrate and a lower bridge arm (102) of the insulating substrate, and the plurality of the power chips (2) at the upper bridge arm (101) and the plurality of the power chips (2) at the lower bridge arm (102) are disposed at uniform intervals along a calibration direction.
  8. 8. The power module according to claim 7, characterized in that the power chips (2) at the upper bridge arm (101) are all connected to the lower bridge arm (102) through a plurality of wires (4), the power chips (2) at the lower bridge arm (102) are all connected to the power terminal mounting structure (107) of the insulating substrate through a plurality of wires (4), the wires (4) connected to the same power chip (2) are parallel to each other, and at least two wires (4) connected to different power chips (2) are parallel to each other.

Description

Insulating substrate and power module Technical Field The invention relates to the technical field of semiconductors, in particular to an insulating substrate and a power module. Background The power chip is the heart of the inverter, the power module is the skeleton of the power chip, and the core for protecting and realizing the inversion function is the core. In the field of passenger automobiles, in recent years, part of high-performance automobile types are firstly carried and applied with 800V electric drive systems, so that the industrial scale application of new energy automobiles is promoted. In an 800V electric driving system, the maximum withstand voltage of the power chip is 1200V, and in the use of the power chip, the following relationship between the bus voltage and the maximum withstand voltage is generally required to be satisfied, so as to avoid the power chip from being broken down, that is, the bus voltage (800V) +the overshoot voltage (l×di/dt, L is the stray inductance) < the maximum withstand voltage of the power chip (1200V). However, at present, the stray inductance of the power module is often higher, so that the power chip has a larger breakdown risk. Disclosure of Invention The invention aims to solve the technical problem of how to reduce the stray inductance of the power module at least to a certain extent. The invention provides an insulating substrate which comprises a metal layer, an insulating layer and a connecting layer, wherein the insulating layer is arranged between the metal layer and the connecting layer, the connecting layer is used for connecting a radiating bottom plate of a power module, the metal layer is provided with an upper bridge arm and a lower bridge arm, the upper bridge arm and the lower bridge arm are used for installing a power chip, and the directions of currents passing through the upper bridge arm and the lower bridge arm are opposite. The insulating substrate comprises a three-layer structure, wherein a metal layer forms a circuit layout layer on the surface, the metal layer is used for bearing the input and output of the current of the power module when the insulating substrate is applied to the power module, the middle layer is an insulating layer and plays a role of insulating isolation protection, the connecting layer on the other surface is used for being sintered and interconnected with a radiating bottom plate of the power module, the metal layer is provided with an upper bridge arm and a lower bridge arm, the upper bridge arm and the lower bridge arm are both used for installing a power chip, when the insulating substrate is applied to the power module, the current flows into the lower bridge arm from the upper bridge arm, so that the input and output of the current are realized, when the upper bridge arm and the lower bridge arm conduct the current, the current directions of the upper bridge arm and the lower bridge arm are opposite, and therefore, the mutual inductance between direct current ends in the power module can be increased, so that stray inductance when the insulating substrate is applied to the power module can be reduced, overshoot voltage can be reduced, and the chip can be prevented from being broken down better. Further, the upper bridge arm comprises a first arm and a second arm which are arranged side by side, the lower bridge arm comprises a third arm and a fourth arm which are arranged side by side, the third arm and the fourth arm are located between the first arm and the second arm, and the first arm, the second arm, the third arm and the fourth arm are all used for installing the power chip. Further, the upper bridge arm further comprises a first connecting portion, the lower bridge arm further comprises a second connecting portion, the first arm and the second arm are connected through the first connecting portion, and the third arm and the fourth arm are connected through the second connecting portion. Further, the first arm and the second arm are axially symmetrically arranged relative to the calibration reference line, and the third arm and the fourth arm are axially symmetrically arranged relative to the calibration reference line. Further, the first arm and the third arm are arranged at adjacent intervals, the second arm and the fourth arm are arranged at adjacent intervals, the part, located between the first arm and the third arm, of the metal layer and the part, located between the second arm and the fourth arm, of the metal layer are respectively provided with an upper bridge arm grid contact area and an upper bridge arm source contact area, the part, located between the third arm and the fourth arm, of the metal layer is provided with a lower bridge arm grid contact area and a lower bridge arm source contact area, the upper bridge arm grid contact area and the lower bridge arm grid contact area are used for installing grid resistors, and the upper bridge arm source contact area and the lower bridge arm so