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CN-116033767-B - Crystalline silicon perovskite laminated solar cell and preparation method thereof

CN116033767BCN 116033767 BCN116033767 BCN 116033767BCN-116033767-B

Abstract

The invention discloses a crystalline silicon perovskite laminated solar cell and a preparation method thereof. The solar cell comprises a crystalline silicon solar cell, an intermediate transparent conductive layer, a metal oxide layer and a perovskite solar cell which are sequentially stacked from bottom to top, wherein the intermediate transparent conductive layer covers a partial area of the crystalline silicon solar cell, each edge of the intermediate transparent conductive layer is retracted by a set distance relative to the edge of the adjacent crystalline silicon solar cell, and the metal oxide layer covers the intermediate transparent conductive layer and an area, which is not covered by the intermediate transparent conductive layer, of the crystalline silicon solar cell. The battery can reduce the leakage and short circuit risks of the crystalline silicon perovskite laminated solar cell.

Inventors

  • LIU MINGZHEN
  • MAO LIN
  • FANG XIAOYU

Assignees

  • 电子科技大学
  • 晶澳太阳能有限公司

Dates

Publication Date
20260512
Application Date
20211216
Priority Date
20211022

Claims (18)

  1. 1. A crystalline silicon perovskite laminated solar cell is characterized by comprising a crystalline silicon solar cell (10), an intermediate transparent conductive layer (20), a metal oxide layer (30) and a perovskite solar cell (40) which are laminated in sequence from bottom to top, The middle transparent conducting layer (20) covers a partial area of the crystalline silicon solar cell (10); -each edge of the intermediate transparent conductive layer (20) is set back a set distance with respect to the edge of the crystalline silicon solar cell (10) adjacent to it; the metal oxide layer (30) covers the area of the intermediate transparent conductive layer (20) not covered by the intermediate transparent conductive layer (20) in the crystalline silicon solar cell (10); the set distance is larger than or equal to 4mm, the length and the width of the crystalline silicon perovskite laminated solar cell are set to be alpha mm, the minimum value of the length and the width of the required middle transparent conducting layer (20) is set to be beta mm, wherein, The distance is set to be 4-4% Arbitrary value in mm.
  2. 2. The crystalline silicon perovskite stacked solar cell according to claim 1, wherein, The metal oxide layer (30) is a metal doped nickel oxide layer.
  3. 3. The crystalline silicon perovskite stacked solar cell of claim 2, wherein the metal doped nickel oxide layer comprises a doped metal comprising: any one or more of copper, cobalt, manganese, lanthanum, yttrium, magnesium, lithium, zinc, indium, tin.
  4. 4. The crystalline silicon perovskite stacked solar cell according to claim 1 or 2, wherein, The thickness of the metal oxide layer (30) is less than or equal to 100nm.
  5. 5. The crystalline silicon perovskite stacked solar cell according to claim 1 or 2, further comprising a passivation layer (50) disposed between the perovskite solar cell (40) and the metal oxide layer (30).
  6. 6. The crystalline silicon perovskite laminated solar cell according to claim 5, wherein the passivation layer (50) has a single layer structure or a laminated structure formed of any one or more of poly [ bis (4-phenyl) (2, 4, 6-trimethylphenyl) amine ], phenylmethylamine iodide, hexyltrimethylammonium bromide, polymethyl methacrylate, and 2,3,5, 6-tetrafluoro-7, 7', 8' -tetracyandimethyl-p-benzoquinone.
  7. 7. The crystalline silicon perovskite stacked solar cell according to claim 1, wherein, The thickness of the intermediate transparent conductive layer (20) is less than or equal to 50nm.
  8. 8. The crystalline silicon perovskite laminated solar cell according to claim 1, wherein the intermediate transparent conductive layer (20) comprises any one or more of indium tin oxide, indium tungsten oxide, indium zinc oxide, aluminum doped zinc oxide, boron doped zinc oxide, indium gallium zinc oxide, magnesium doped zinc oxide.
  9. 9. The crystalline silicon perovskite stacked solar cell according to claim 1, wherein, The perovskite solar cell (40) comprises an absorption layer (41), an electron transmission layer (42), a front transparent conductive layer (43) and a front conductive grid line (44) which are sequentially stacked from bottom to top, The front transparent conductive layer (43) covers a partial region of the electron transport layer (42); Each edge of the front transparent conductive layer (43) is set back by a distance of greater than or equal to 4mm from the edge of the electron transport layer (42) adjacent thereto.
  10. 10. The crystalline silicon perovskite stacked solar cell as claimed in claim 9, wherein a major surface projection of the front transparent conductive layer (43) coincides with a major surface projection of the intermediate transparent conductive layer (20).
  11. 11. The crystalline silicon perovskite stacked solar cell as claimed in claim 9, wherein the absorber layer (41) comprises any one of ：MAPbI 3 、FAPbI 3 、Cs x (FA y MA 1-y ) 1-x Pb(I z Br 1-z )3, wherein 0< x+.0.2, 0.5< y+.1, 0.75+.z <1.
  12. 12. The crystalline silicon perovskite stacked solar cell as claimed in claim 9, wherein the front transparent conductive layer (43) has a thickness in the range of 50nm to 200 nm.
  13. 13. The crystalline silicon perovskite stacked solar cell according to claim 1, wherein, The crystalline silicon solar cell (10) comprises a back conductive grid line (11), a back transparent conductive layer (12), a p-type amorphous silicon layer (13), a first intrinsic amorphous silicon layer (14), a silicon wafer (15), a second intrinsic amorphous silicon layer (16) and an n-type amorphous silicon layer (17) which are sequentially stacked from bottom to top.
  14. 14. The crystalline silicon perovskite laminated solar cell according to claim 13, wherein both main surfaces of the silicon wafer (15) are textured structures, and the textured structures form pyramid structures with a gaussian distribution median of bottom side length of 4 μm or less.
  15. 15. The crystalline silicon perovskite stacked solar cell as claimed in claim 14, wherein a major surface of the intermediate transparent conductive layer (20) and a major surface of the metal oxide layer (30) are mated with the textured structure.
  16. 16. The crystalline silicon perovskite stacked solar cell as claimed in claim 13, wherein the thickness of the back transparent conductive layer (12) is in the range of 0.05 μm to 200 μm.
  17. 17. A method of producing a crystalline silicon perovskite stacked solar cell as claimed in any one of claims 1 to 8, comprising: Step 1, preparing a part of the structure of a crystalline silicon solar cell (10) based on a silicon wafer; Step 2, preparing an intermediate transparent conductive layer (20) on n-type amorphous silicon included in a part of the structure of the crystalline silicon solar cell (10), wherein each edge of the intermediate transparent conductive layer (20) is retracted by a set distance relative to the edge of the adjacent crystalline silicon solar cell (10); step 3, preparing a metal oxide layer (30) on the middle transparent conductive layer (20) and on the area which is not covered by the middle transparent conductive layer (20) in the crystalline silicon solar cell (10); and 4, preparing a perovskite solar cell (40) on the metal oxide layer (30).
  18. 18. The method according to claim 17, further comprising, after step 3, before step 4, step 3', preparing a passivation layer (50) on the metal oxide layer (30); Step 4 comprises preparing a perovskite solar cell (40) on the passivation layer (50).

Description

Crystalline silicon perovskite laminated solar cell and preparation method thereof The present application claims priority from chinese patent application 202111232844.5 entitled "a crystalline perovskite stacked solar cell and method of fabrication" filed on 10/22 of 2021, the disclosure of which is incorporated herein in its entirety as part of the present application. Technical Field The invention relates to a crystalline silicon perovskite laminated solar cell and a preparation method thereof. Background The current crystalline silicon perovskite laminated solar cell provides a better technical path for further improving the efficiency of the solar cell. The basic structure of the crystalline silicon perovskite laminated solar cell is that a conductive layer is arranged between the crystalline silicon solar cell and the perovskite solar cell, so that the superposition of the crystalline silicon solar cell and the perovskite solar cell is realized. However, the existing crystalline silicon perovskite laminated solar cell is easy to leak electricity and has high short circuit risk. Disclosure of Invention In view of the above, the present invention provides a crystalline perovskite stacked solar cell and a method for manufacturing the same, which can reduce the risk of leakage and short circuit of the crystalline perovskite stacked solar cell. In order to solve the technical problems, the invention provides the following technical scheme: In a first aspect, the invention provides a crystalline silicon perovskite laminated solar cell, which comprises a crystalline silicon solar cell, an intermediate transparent conducting layer, a metal oxide layer and a perovskite solar cell which are laminated in sequence from bottom to top, The middle transparent conducting layer covers a partial area of the crystalline silicon solar cell; each edge of the middle transparent conductive layer is retracted by a set distance relative to the edge of the adjacent crystalline silicon solar cell; the metal oxide layer covers the area of the middle transparent conductive layer, which is not covered by the middle transparent conductive layer, in the crystalline silicon solar cell. In a second aspect, the invention provides a method for preparing a crystalline silicon perovskite laminated solar cell, comprising the following steps: step 1, preparing a part of structure of a crystalline silicon solar cell based on a silicon wafer; step 2, preparing an intermediate transparent conductive layer on n-type amorphous silicon included in a part of the structure of the crystalline silicon solar cell, wherein each edge of the intermediate transparent conductive layer is retracted by a set distance relative to the edge of the adjacent crystalline silicon solar cell; step 3, preparing a metal oxide layer on the middle transparent conductive layer and on the area, which is not covered by the middle transparent conductive layer, of the crystalline silicon solar cell; and 4, preparing the perovskite solar cell on the metal oxide layer. The technical scheme of the first aspect of the invention has the advantages or beneficial effects that the crystalline silicon perovskite laminated solar cell provided by the embodiment of the invention has the advantages that each edge of the intermediate transparent conducting layer arranged between the crystalline silicon solar cell and the perovskite solar cell is retracted by a set distance relative to the edge of the adjacent crystalline silicon solar cell, and the intermediate transparent conducting layer defines the effective area of the crystalline silicon perovskite laminated solar cell. Then, even if the edge of the crystalline silicon perovskite laminated solar cell is cut, the integrity of the middle transparent conducting layer can be ensured, namely the integrity of the effective areas of the crystalline silicon solar cell and the perovskite solar cell is ensured, so that the leakage and short circuit risks of the crystalline silicon perovskite laminated solar cell are reduced. In addition, through setting up the metal oxide layer, this metal oxide layer covers the region of middle transparent conducting layer and crystalline silicon solar cell not covered by middle transparent conducting layer, this oxide layer both as the hole transport layer transmission electron of perovskite solar cell, and combine with middle transparent conducting layer again, as the junction layer between crystalline silicon solar cell and the perovskite solar cell, can obviously improve the face resistance between crystalline silicon solar cell and the perovskite solar cell, and this junction layer resistance is obviously higher than the face resistance of single middle transparent conducting layer promptly, in order to further reduce the electric leakage and the short circuit risk of crystalline silicon perovskite stromatolite solar cell. In addition, the performances such as high open circuit voltage, battery conversio