CN-116096212-B - Method for manufacturing multi-bit magnetic memory cell and memory cell

Abstract

The invention provides a manufacturing method of a multi-bit magnetic memory cell, the multi-bit magnetic memory cell and a memory, wherein the method comprises the steps of forming a spin orbit moment layer; at least one magnetic tunnel junction for storing data and at least one magnetic body for providing a leakage magnetic field to the magnetic tunnel junction are formed on the spin-orbit torque layer, so that asymmetry of the magnetic tunnel junction is enhanced.

Inventors

• WANG ZHAOHAO
• WANG MIN
• SHI KEWEN
• ZHAO WEISHENG

Assignees

• 北京航空航天大学

Dates

Publication Date

20260512

Application Date

20230120

Claims (10)

1. 1. A method of fabricating a multi-bit magnetic memory cell, comprising: forming a spin-orbit torque layer; At least one magnetic tunnel junction for storing data and at least one magnetic body for providing a leakage magnetic field to the magnetic tunnel junction such that asymmetry of the magnetic tunnel junction is enhanced are formed on the spin-orbit torque layer.
2. 2. The method of fabricating a multi-bit magnetic memory cell of claim 1, further comprising: A protective dielectric layer is formed over the at least one magnetic tunnel junction and the at least one magnetic body.
3. 3. The method of fabricating a multi-bit magnetic memory cell of claim 1, further comprising: Breakdown the magnetic body.
4. 4. The method of fabricating a multibit magnetic memory cell according to claim 1 or 3, wherein the magnetic body comprises a first ferromagnetic layer, a second ferromagnetic layer, an insulating layer, and a third ferromagnetic layer sequentially disposed from top to bottom, the third ferromagnetic layer being formed on the spin-orbit-torque layer; The method further comprises: Etching at least one of the first ferromagnetic layer, the second ferromagnetic layer, the insulating layer and the third ferromagnetic layer of the magnetic body to form a first hollow region; A magnetic material or a protective medium is deposited in the first hollow region.
5. 5. A method of fabricating a multi-bit magnetic memory cell according to claim 1 or 3, further comprising: Etching away the magnetic body to form a second hollow area; and depositing a magnetic material in the second hollow region.
6. 6. The method of claim 1, wherein the number of magnetic tunnel junctions and the magnetic bodies is a plurality; Wherein one or more of the magnetic tunnel junctions and one or more of the magnetic bodies are disposed apart in a direction of a spin-orbit torque current input from the spin-orbit torque layer.
7. 7. The method of manufacturing a multi-bit magnetic memory cell of claim 6, wherein, One or two of the magnetic tunnel junctions and one or two of the magnetic bodies are arranged at intervals along the direction of the spin-orbit-torque current inputted from the spin-orbit-torque layer.
8. 8. The method of fabricating a multi-bit magnetic memory cell of claim 1, further comprising: Providing a first electrode on top of the magnetic tunnel junction; a second electrode is provided on top of at least one of the magnetic bodies.
9. 9. The method of fabricating a multi-bit magnetic memory cell of claim 1, further comprising: and connecting the second electrode of the magnetic body with the second electrode with a data writing module, wherein the data writing module is used for determining a writing current path of a corresponding magnetic tunnel junction according to data to be written, and writing spin-orbit torque current through a current input end of the second electrode or the spin-orbit torque layer on the writing current path so as to write the data to be written into the corresponding magnetic tunnel junction.
10. 10. A multi-bit magnetic memory cell fabricated by the method of any one of claims 1-9.

Description

Method for manufacturing multi-bit magnetic memory cell and memory cell Technical Field The present invention relates to the field of semiconductor technology, and in particular, to a method for manufacturing a multi-bit magnetic memory cell and a memory cell. Background With the continuous shrinking of semiconductor process dimensions, moore's law slows down, and the increase in leakage current and interconnect delay become bottlenecks in conventional CMOS memories. Finding new generation memory technology solutions has become an important point in integrated circuit research, where magnetic random access memory cells are receiving widespread attention. Compared with the traditional device, the magnetic random access memory (Magnetic random access memory, MRAM) has the advantages of unlimited erasing times, non-volatility, high reading and writing speed, irradiation resistance and the like, is hopeful to become a general memory, and is an ideal device for constructing a next generation of nonvolatile memory and in-memory calculation. To further increase the storage density of SPIN-orbit torque devices, researchers have proposed a quasi-two-terminal structure of NAND-SPIN that enables multi-bit data storage by fabricating two or more Magnetic Tunnel Junctions (MTJs) on the same SPIN-orbit torque layer. While the number of transistors required for the overall structure is reduced because the magnetic tunnel junction shares transistors connected to the spin-orbit torque layer, the design effectively increases the storage density. For this structure, researchers have proposed a corresponding data writing scheme. One such writing scheme is to erase all magnetic tunnel junctions to a first state using SPIN-orbit torque (Spin orbit torque, SOT) current, and then write part of the magnetic tunnel junctions to a second state using SPIN-transfer torque (SPIN TRANSFER torque, STT) current, with the read margin and power consumption of the NAND-SPIN limiting the improvement in performance. Disclosure of Invention It is an object of the present invention to provide a method for fabricating a multi-bit magnetic memory cell that increases the read margin and reduces power consumption. It is another object of the present invention to provide a multi-bit magnetic memory cell. In order to achieve the above object, one aspect of the present invention discloses a method for manufacturing a multi-bit magnetic memory cell, comprising: forming a spin-orbit torque layer; At least one magnetic tunnel junction for storing data and at least one magnetic body for providing a leakage magnetic field to the magnetic tunnel junction such that asymmetry of the magnetic tunnel junction is enhanced are formed on the spin-orbit torque layer. Preferably, the method further comprises: A protective dielectric layer is formed over the at least one magnetic tunnel junction and the at least one magnetic body. Preferably, the method further comprises: Breakdown the magnetic body. Preferably, the magnetic body includes a first ferromagnetic layer, a second ferromagnetic layer, an insulating layer, and a third ferromagnetic layer sequentially disposed from top to bottom, the third ferromagnetic layer being formed on the spin-orbit torque layer; The method further comprises: Etching at least one of the first ferromagnetic layer, the second ferromagnetic layer, the insulating layer and the third ferromagnetic layer of the magnetic body to form a first hollow region; A magnetic material or a protective medium is deposited in the first hollow region. Preferably, the method further comprises: Etching away the magnetic body to form a second hollow area; and depositing a magnetic material in the second hollow region. Preferably, the number of the magnetic tunnel junctions and the magnetic bodies is plural; Wherein one or more of the magnetic tunnel junctions and one or more of the magnetic bodies are disposed apart in a direction of a spin-orbit torque current input from the spin-orbit torque layer. Preferably, the method comprises the steps of, One or two of the magnetic tunnel junctions and one or two of the magnetic bodies are arranged at intervals along the direction of the spin-orbit-torque current inputted from the spin-orbit-torque layer. Preferably, the method further comprises: Providing a first electrode on top of the magnetic tunnel junction; a second electrode is provided on top of at least one of the magnetic bodies. Preferably, the method further comprises: and connecting the second electrode of the magnetic body with the second electrode with a data writing module, wherein the data writing module is used for determining a writing current path of a corresponding magnetic tunnel junction according to data to be written, and writing spin-orbit torque current through a current input end of the second electrode or the spin-orbit torque layer on the writing current path so as to write the data to be written into the corresponding magnetic tunnel ju