CN-116110891-B - Semiconductor device and method of forming the same

Abstract

A method for forming semiconductor device includes providing substrate, forming insulation layer and first conductive contact pad separated by insulation layer in substrate, forming multiple convex columns on substrate, forming semiconductor structure between two adjacent convex columns, contacting with first conductive contact pad, forming first U-shaped conductive layer covering upper surface of first conductive contact pad and side wall of each convex column, second U-shaped conductive layer in first U-shaped conductive layer, first dielectric layer in second U-shaped conductive layer and second conductive contact pad above first dielectric layer. The application can inhibit the leakage problem in the semiconductor device and improve the semiconductor performance.

Inventors

• CHEN MINTENG

Assignees

• 福建省晋华集成电路有限公司

Dates

Publication Date

20260508

Application Date

20230118

Claims (19)

1. 1. A method of forming a semiconductor device, the method comprising: providing a substrate, and forming an insulating layer and a first conductive contact pad separated by the insulating layer in the substrate; Forming a plurality of posts on the substrate; And forming a semiconductor structure between two adjacent convex columns, wherein the semiconductor structure is in contact with the first conductive contact pad, the semiconductor structure comprises a first U-shaped conductive layer, a second U-shaped conductive layer, a first dielectric layer and a second conductive contact pad, the first U-shaped conductive layer is positioned in the first U-shaped conductive layer, the second dielectric layer is positioned in the second U-shaped conductive layer, the second conductive contact pad is positioned above the first dielectric layer, the bottom surface of the first U-shaped conductive layer is in direct contact with the first conductive contact pad, the side wall of the first U-shaped conductive layer is in direct contact with the second conductive contact pad, and the conductive capacity of the second U-shaped conductive layer is lower than that of the first U-shaped conductive layer.
2. 2. The method of forming a semiconductor device of claim 1, wherein forming a semiconductor structure between two adjacent pillars comprises: Forming a first U-shaped conductive layer conformally covering the upper surface of the first conductive contact pad and the side wall of each convex column; forming a second U-shaped conductive layer on the surface of the first U-shaped conductive layer; Filling a first dielectric layer in a first groove in the second U-shaped conductive layer, wherein the top surface of the first dielectric layer is not higher than the top surface of the second U-shaped conductive layer; And forming a second conductive contact pad on the upper surface of the first dielectric layer so that the first U-shaped conductive layer and the second U-shaped conductive layer are communicated with the first conductive contact pad and the second conductive contact pad.
3. 3. The method for forming a semiconductor device according to claim 2, wherein filling the first dielectric layer in the first recess in the second U-shaped conductive layer comprises: Forming a first dielectric layer which fills the first groove in the second U-shaped conductive layer and covers the surface of the second U-shaped conductive layer; And etching the first dielectric layer and the second U-shaped conductive layer to enable the surfaces of the first dielectric layer and the second U-shaped conductive layer to be flush and lower than the top of the first U-shaped conductive layer.
4. 4. The method of forming a semiconductor device of claim 3, wherein said etching said first dielectric layer and said second U-shaped conductive layer comprises: etching the first dielectric layer to enable the surface of the first dielectric layer to be located in the first groove; And etching the second U-shaped conductive layer to align the second U-shaped conductive layer with the first dielectric layer.
5. 5. The method of forming a semiconductor device of claim 3, wherein a second dielectric layer is disposed within said stud, said first U-shaped conductive layer also covering a top surface of said stud; forming a second conductive contact pad on the upper surface of the first dielectric layer, including: Forming a second groove which is formed by filling the side wall of the first U-shaped conductive layer and the upper surfaces of the second U-shaped conductive layer and the first dielectric layer, and covering the side wall of the first U-shaped conductive layer and the upper surfaces of the second U-shaped conductive layer and the first dielectric layer with a first doped semiconductor layer; And etching the first doped semiconductor layer and the first U-shaped conductive layer to expose the second dielectric layer in the convex column, and enabling the first doped semiconductor layer to serve as the second conductive contact pad to be aligned with the second dielectric layer.
6. 6. The method of forming a semiconductor device according to claim 5, wherein the first doped semiconductor layer is doped with first type particles.
7. 7. The method of claim 2, wherein a top portion of the first dielectric layer is aligned with a top portion of the second U-shaped conductive layer.
8. 8. The method of forming a semiconductor device of claim 1, wherein the first conductive contact pad comprises polysilicon doped with a first type of particle.
9. 9. The method of forming a semiconductor device according to claim 1, wherein the first U-shaped conductive layer includes a second doped semiconductor layer, wherein the second U-shaped conductive layer includes a third doped semiconductor layer doped with first type particles, and wherein the third doped semiconductor layer is doped with second type particles.
10. 10. The method for forming a semiconductor device according to claim 6 or 8, wherein the first type particles include N type particles.
11. 11. The method of forming a semiconductor device according to claim 9, wherein the second type particles comprise P-type particles.
12. 12. The method of claim 9, wherein the second doped semiconductor layer comprises an N-type doped polysilicon layer and the third doped semiconductor layer comprises a germanium-silicon layer doped with boron ions.
13. 13. A semiconductor device, comprising: a substrate, wherein a plurality of first conductive contact pads separated by an insulating layer are arranged in the substrate; A plurality of posts located on the substrate; The semiconductor structure is positioned between two adjacent convex columns and is in contact with the first conductive contact pad, the semiconductor structure comprises a first U-shaped conductive layer, a second U-shaped conductive layer, a first dielectric layer and a second conductive contact pad, the first U-shaped conductive layer is positioned in the first U-shaped conductive layer, the second conductive contact pad is positioned above the first dielectric layer, the bottom surface of the first U-shaped conductive layer is in direct contact with the first conductive contact pad, the side wall of the first U-shaped conductive layer is in direct contact with the second conductive contact pad, and the conductive capacity of the second U-shaped conductive layer is lower than that of the first U-shaped conductive layer.
14. 14. The semiconductor device of claim 13, wherein a top surface of the second U-shaped conductive layer is aligned with a top surface of the first dielectric layer.
15. 15. The semiconductor device of claim 13, wherein a top surface of the first dielectric layer is lower than a top surface of the second U-shaped conductive layer.
16. 16. The semiconductor device of claim 13, wherein a second dielectric layer is disposed within the stud, and wherein a surface of the second conductive contact pad is aligned with a surface of the second dielectric layer.
17. 17. The semiconductor device of claim 13, wherein a sidewall of the first U-shaped conductive layer, the second U-shaped conductive layer and an upper surface of the first dielectric layer enclose a second recess, and the second recess is filled with the second conductive contact pad.
18. 18. The semiconductor device of claim 13, wherein a sidewall of the second U-shaped conductive layer and an upper surface of the first dielectric layer enclose a third recess, the third recess being filled with the second conductive contact pad.
19. 19. A semiconductor device, comprising: a substrate, wherein a plurality of first conductive contact pads separated by an insulating layer are arranged in the substrate; a plurality of convex columns positioned on the substrate, wherein the convex columns are positioned on the insulating layer and extend upwards along the direction vertical to the top surface of the substrate; The semiconductor structure is positioned between two adjacent convex columns and is in contact with the first conductive contact pad, the semiconductor structure comprises a first U-shaped conductive layer, a second U-shaped conductive layer, a first dielectric layer and a second conductive contact pad, the first U-shaped conductive layer is positioned in the first U-shaped conductive layer, the second conductive contact pad is positioned above the first dielectric layer, the bottom surface of the first U-shaped conductive layer is in direct contact with the first conductive contact pad, the side wall of the first U-shaped conductive layer is in direct contact with the second conductive contact pad, and the conductive capacity of the second U-shaped conductive layer is lower than that of the first U-shaped conductive layer.

Description

Semiconductor device and method of forming the same Technical Field The application relates to the technical field of semiconductors, in particular to a semiconductor device and a forming method thereof. Background The interconnection structure is a common structure in the semiconductor device, and can interconnect a plurality of objects in the semiconductor device, so that the interconnected objects are communicated and mutually assisted to realize corresponding functions. The inventors studied on the interconnect structure in the semiconductor device, and found that when the interconnect structure (e.g., a ring-shaped interconnect structure) shown in fig. 1 is used to connect the lower object 1 and the upper object 2, electric leakage is liable to occur, affecting the performance of the corresponding semiconductor device. Disclosure of Invention In view of the above, the present application provides a semiconductor device and a method for forming the same, so as to solve the problem that the related interconnection structure is easy to leak electricity and affect the performance of the corresponding semiconductor device. The application provides a method for forming a semiconductor device, which comprises the following steps: providing a substrate, and forming an insulating layer and a first conductive contact pad separated by the insulating layer in the substrate; Forming a plurality of posts on the substrate; And forming a semiconductor structure between two adjacent convex columns, wherein the semiconductor structure is contacted with the first conductive contact pad, and the semiconductor structure comprises a first U-shaped conductive layer, a second U-shaped conductive layer, a first dielectric layer and a second conductive contact pad, wherein the first U-shaped conductive layer is used for covering the upper surface of the first conductive contact pad and the side walls of the convex columns, the second U-shaped conductive layer is positioned in the first U-shaped conductive layer, the first dielectric layer is arranged in the second U-shaped conductive layer, and the second conductive contact pad is positioned above the first dielectric layer. Optionally, the semiconductor structure is formed between two adjacent protruding columns, and comprises a first U-shaped conductive layer which is formed to cover the upper surface of the first conductive contact pad and the side wall of each protruding column in a conformal mode, a second U-shaped conductive layer which is formed on the surface of the first U-shaped conductive layer and has conductivity lower than that of the first U-shaped conductive layer, a first dielectric layer is filled in a first groove in the second U-shaped conductive layer, the top surface of the first dielectric layer is not higher than that of the second U-shaped conductive layer, and a second conductive contact pad is formed on the upper surface of the first dielectric layer, so that the first U-shaped conductive layer and the second U-shaped conductive layer are communicated with the first conductive contact pad and the second conductive contact pad. Optionally, the step of filling the first groove in the second U-shaped conductive layer with the first dielectric layer comprises the steps of forming the first dielectric layer which fills the first groove in the second U-shaped conductive layer and covers the surface of the second U-shaped conductive layer, and the step of etching the first dielectric layer and the second U-shaped conductive layer to enable the surfaces of the first dielectric layer and the second U-shaped conductive layer to be flush and lower than the top of the first U-shaped conductive layer. Optionally, the etching the first dielectric layer and the second U-shaped conductive layer comprises etching the first dielectric layer to enable the surface of the first dielectric layer to be located in the first groove, and etching the second U-shaped conductive layer to enable the second U-shaped conductive layer to be aligned with the first dielectric layer. Optionally, a second dielectric layer is arranged in the convex column, the first U-shaped conductive layer also covers the top surface of the convex column, a second conductive contact pad is formed on the upper surface of the first dielectric layer, the second conductive contact pad is formed by forming a second groove which is filled in the side wall of the first U-shaped conductive layer and is surrounded by the second U-shaped conductive layer and the upper surface of the first dielectric layer, the first doped semiconductor layer covers the side wall of the first U-shaped conductive layer and the upper surface of the second U-shaped conductive layer and the upper surface of the first dielectric layer, and the first doped semiconductor layer and the first U-shaped conductive layer are etched to expose the second dielectric layer in the convex column, and the first doped semiconductor layer serves as th