Search

CN-116125744-B - Photomask, manufacturing method thereof and exposure method

CN116125744BCN 116125744 BCN116125744 BCN 116125744BCN-116125744-B

Abstract

The invention relates to the field of semiconductor processing, and discloses a photomask, a manufacturing method thereof and an exposure method. A photomask comprises a first graph area and a first cutting channel area surrounding the first graph area, wherein a first test element group mark is arranged in the first cutting channel area, and a first gap is arranged between the side edge of the first test element group mark and the edge, adjacent to the first test element group mark, of the first cutting channel area along the width direction of the first cutting channel area. A first gap is formed between the side edge of the first test element group mark in the photomask and the edge, adjacent to the first test element group mark, in the first cutting channel region, namely, a first gap is formed between the first test element group mark and the first pattern region, and during the manufacturing process of the photomask, the photoresist separates metals during the second scanning, so that the metals in the first gap are removed, redundant metal residues are not generated on the photomask, and the influence of the residual metals on the pattern region of the wafer chip is avoided.

Inventors

  • YU JING

Assignees

  • 长鑫存储技术有限公司

Dates

Publication Date
20260508
Application Date
20211115

Claims (11)

  1. 1. A photomask is characterized by comprising a first graph area and a first cutting channel area surrounding the first graph area, wherein a first test element group mark is arranged in the first cutting channel area, and a first gap is arranged between the side edge of the first test element group mark and the edge, adjacent to the first test element group mark, in the first cutting channel area along the width direction of the first cutting channel area; the first gap a satisfies that a is more than or equal to 0.5 mu m, and the width D 1 of the first test element group mark and the width D 1 of the first cutting track area satisfy the following relation: Wherein, lambda 1 ranges from 80% to 85%.
  2. 2. The photomask of claim 1 wherein the first test element group mark has a rectangular shape, the side edges of the first test element group mark include a first side edge and a second side edge that are arranged in parallel, and the first side edge and the second side edge both extend in the same direction as the first scribe line region, and the edge of the first scribe line region includes a first edge and a second edge, the first edge being located on a side of the first side edge that faces away from the second side edge, and the second edge being located on a side of the second side edge that faces away from the first side edge; the first side edge having the first gap therebetween, and/or, The second side and the second edge have the first gap therebetween.
  3. 3. The photomask of claim 1, further comprising a second pattern region and a second scribe line region surrounding the second pattern region, wherein the second scribe line region has an overlap region with the first scribe line region, wherein the second scribe line region has a second test element group mark therein, wherein the second test element group mark is located in the overlap region, wherein the second test element group mark is aligned with the first test element group mark along a first direction, wherein the first direction is an alignment direction of the first pattern region and the second pattern region; along the first direction, a second gap is provided between a side edge of the second test element group mark and an edge of the second scribe line region adjacent to the second test element group mark.
  4. 4. A photomask according to claim 3, wherein the shape of the second test element group mark is rectangular, the side edge of the second test element group mark comprises a third side edge and a fourth side edge which are arranged in parallel, and the extension directions of the third side edge and the fourth side edge are the same as the extension directions of the second scribe line region, and the edge of the second scribe line region comprises a third edge and a fourth edge, the third edge is located on the side of the third side edge away from the fourth side edge, and the fourth edge is located on the side of the fourth side edge away from the third side edge; The third side edge having the second gap therebetween, and/or, The fourth side edge and the fourth edge have the second gap therebetween.
  5. 5. The mask of claim 3 wherein the second gap b satisfies b≥0.5 μm.
  6. 6. The mask of claim 3 wherein a relationship between a width D 2 of the second test element group mark and the second scribe line region width D 2 is as follows: Wherein, lambda 2 ranges from 80% to 85%.
  7. 7. The mask of claim 1, wherein the first street region comprises a first sub-street region and a second sub-street region, wherein the first sub-street region is located between the second sub-street region and the first pattern region, and the second sub-street region surrounds the first sub-street region, the first sub-street region surrounds the first pattern region.
  8. 8. A method of fabricating a photomask, comprising: Providing a substrate; Performing first patterning treatment on the substrate to form a first pattern on the substrate, wherein the first pattern comprises a first graph area, a first sub-cutting channel area surrounding the first graph area and a first test element group mark, and the first test element group mark and the first sub-cutting channel area have an overlapping area; the method comprises the steps of forming a first pattern on a substrate, forming a second pattern on a first pattern of the substrate, wherein the second pattern comprises a first sub-dicing street region and a first test element group mark, the first sub-dicing street region surrounds the first sub-dicing street region to form a first dicing street region with the first sub-dicing street region, the first test element group mark and the first sub-dicing street region have an overlapping region, the second test element group mark and the first sub-dicing street region have an overlapping region, and the second test element group mark and the first test element group mark are arranged along a first direction; the first gap a satisfies that a is more than or equal to 0.5 mu m, and the width D 1 of the first test element group mark and the width D 1 of the first cutting track area satisfy the following relation: Wherein, lambda 1 ranges from 80% to 85%.
  9. 9. The method according to claim 8, wherein the second gap b satisfies b≥0.5. Mu.m.
  10. 10. The method of claim 8, wherein the width D 2 of the second test element group mark and the first scribe line region width D 1 satisfy the following relationship: Wherein, lambda 2 ranges from 80% to 85%.
  11. 11. An exposure method, comprising: providing a wafer, which comprises a plurality of exposure areas distributed in an array; the wafer is exposed with a mask according to any one of claims 1-7 to form an exposure pattern at each of the exposed areas.

Description

Photomask, manufacturing method thereof and exposure method Technical Field The invention relates to the technical field of semiconductor processing, in particular to a photomask, a manufacturing method thereof and an exposure method. Background With the rapid development of the electronic industry, in the electronic manufacturing industries such as Liquid crystal display (Liquid CRYSTAL DISPLAY, LCD) and integrated circuit (INTEGRATED CIRCUIT, IC), the photomask has become one of the essential important molds, and the application thereof has become more and more widespread. The PSM (PHASE SHIFT MASK, phase transfer mask) mask requires a second scan during fabrication to remove excess metal, but still has metal residues, which can damage the stripe pattern morphology of the chip pattern area during the chip fabrication process. Disclosure of Invention According to some embodiments, a first aspect of the present application provides a photomask, including a first pattern region and a first scribe line region surrounding the first pattern region, wherein a first test element group mark is provided in the first scribe line region, and a first gap is provided between a side edge of the first test element group mark and an edge of the first scribe line region adjacent to the first test element group mark along a width direction of the first scribe line region. Embodiments of the present application have at least the following advantages: The first test element group mark in the photomask is positioned in the first cutting channel region, a first gap is formed between the side edge of the first test element group mark and the edge, adjacent to the first test element group mark, in the first cutting channel region, namely, a first gap is formed between the first test element group mark and the first pattern region, and in the manufacturing process of the photomask, the photoresist separates metal in the second scanning process, so that the metal in the first gap is removed, redundant metal residues are not generated on the photomask, and the influence of residual metal on the pattern region of the wafer chip is avoided. In some embodiments, the first test element group mark has a rectangular shape, the side edges of the first test element group mark include a first side edge and a second side edge that are disposed in parallel, and the extending directions of the first side edge and the second side edge are the same as the extending directions of the first scribe line region, the edge of the first scribe line region includes a first edge and a second edge, the first edge is located on a side of the first side edge away from the second side edge, and the second edge is located on a side of the second side edge away from the first side edge; the first side edge having the first gap therebetween, and/or, The second side and the second edge have the first gap therebetween. In some embodiments, the first gap a satisfies a≥0.5 μm. In some embodiments, the following relationship is satisfied between the width D 1 of the first test element group mark and the width D 1 of the first scribe line region: d1≤λ1D1 Wherein, lambda 1 ranges from 80% to 85%. In some embodiments, the mask further comprises a second patterned region and a second scribe line region surrounding the second patterned region, the second scribe line region having an overlap region with the first scribe line region; the second cutting channel area is internally provided with a second test element group mark, the second test element group mark is positioned in the overlapping area, and the second test element group mark and the first test element group mark are arranged along a first direction, wherein the first direction is the arrangement direction of the first graph area and the second graph area; along the first direction, a second gap is provided between a side edge of the second test element group mark and an edge of the second scribe line region adjacent to the second test element group mark. In some embodiments, the shape of the second test element group mark is rectangular, the side edge of the second test element group mark includes a third side edge and a fourth side edge which are arranged in parallel, and the extension directions of the third side edge and the fourth side edge are the same as the extension direction of the second scribe line region, the edge of the second scribe line region includes a third edge and a fourth edge, the third edge is located on one side of the third side edge away from the fourth side edge, and the fourth edge is located on one side of the fourth side edge away from the third side edge; The third side edge having the second gap therebetween, and/or, The fourth side edge and the fourth edge have the second gap therebetween. In some embodiments, the second gap b satisfies b≥0.5 μm. In some embodiments, the following relationship is satisfied between the width D 2 of the second test element group mark and the second