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CN-116130327-B - Magnet system and sputtering apparatus

CN116130327BCN 116130327 BCN116130327 BCN 116130327BCN-116130327-B

Abstract

A magnet system and a sputtering apparatus are provided. According to various embodiments, a magnet system (100) for a sputtering apparatus (300) may comprise a support frame (414), a magnet carrier (102) having a first mounting region (1002 a) and a second mounting region (1002 b), a first support device (404) mounted at the magnet carrier (102) by means of the first mounting region (1002 a), a second support device (404) mounted at the magnet carrier (102) by means of the second mounting region (1002 b), wherein the first mounting region (1002 a) and/or the second mounting region (1002 b) are designed such that an orientation at which the first support device (404) and the second support device (404) are mounted relative to each other at the magnet carrier (102) may be changed, wherein the first support device (404) and the second support device (404) are designed for engaging with each other with the support frame (414) to form a support device for supporting the magnet carrier (102).

Inventors

  • K. SCHNEIDER
  • G. GROSS
  • SANDER TOBIAS
  • R. Hauswald

Assignees

  • 冯·阿登纳资产股份有限公司

Dates

Publication Date
20260508
Application Date
20221024
Priority Date
20211112

Claims (11)

  1. 1. A magnet system (100) for a sputtering apparatus (300), the magnet system (100) comprising: -a support frame (414); -a magnet carrier (102) having a first mounting area (1002 a) and a second mounting area (1002 b); -a first support device mounted at the magnet carrier (102) by means of the first mounting region (1002 a); a second support device mounted at the magnet carrier (102) by means of the second mounting region (1002 b), -Wherein the first mounting area (1002 a) and/or the second mounting area (1002 b) are arranged such that the orientation of the first and second support devices mounted relative to each other at the magnet carrier (102) can be changed; -wherein the first and second support means are spliced together with the support frame (414) to form a support means for supporting the magnet carrier (102); Wherein the support frame (414) has a greater bending stiffness than the magnet carrier (102).
  2. 2. The magnet system (100) according to claim 1, wherein the first mounting region (1002 a) of the first support device provides a plurality of mounting positions in which the first support device is mountable at the first mounting region (1002 a).
  3. 3. The magnet system (100) of claim 2, wherein the plurality of mounting locations have a spacing from one another, wherein the plurality of mounting locations have a first mounting location and a second mounting location, the first support device being mountable at the first mounting region (1002 a) in either the first mounting location or the second mounting location, wherein the first mounting location and the second mounting location have a spacing from one another.
  4. 4. A magnet system (100) according to claim 2 or 3, wherein the first mounting region (1002 a) is arranged such that the first support device is mountable in any position between the plurality of mounting positions at the first mounting region (1002 a), wherein the plurality of mounting positions are arranged equidistantly and/or in sequence.
  5. 5. A magnet system (100) according to any one of claims 1 to 3, wherein the first and second support devices are designed in the same way as each other, such that they are mounted in a manner exchangeable with each other.
  6. 6. A magnet system (100) according to any of claims 1 to 3, further comprising: -a plurality of sequentially arranged magnets carried by means of the magnet carrier (102), wherein the plurality of sequentially arranged magnets provides a plurality of sequentially arranged magnet rows.
  7. 7. A magnet system (100) according to any one of claims 1 to 3, wherein the first support device and/or the second support device has a ball bearing, wherein the first support device and/or the second support device has a bolt, at which the ball bearing is fixed.
  8. 8. A magnet system (100) according to any one of claims 1 to 3, wherein the support frame (414) has one or more guide tracks into which the first support device and/or the second support device engage.
  9. 9. The magnet system (100) according to claim 8, wherein each guide rail has a slot into which the first support device and/or the second support device engage.
  10. 10. A magnet system (100) according to any of claims 1 to 3, further comprising: -a tubular housing in which the support frame (414) is arranged; wherein the support frame (414) is coupled with the housing in a fixed position relative to the housing.
  11. 11. A sputtering apparatus (300), comprising: a target support apparatus having one or more end-blocks, the target support apparatus providing an axis of rotation for rotatably supporting a sputter target; -a magnet system (100) according to any one of claims 1 to 10, supported in a fixed position relative to the axis of rotation by means of the target support device.

Description

Magnet system and sputtering apparatus Technical Field Various embodiments relate to a magnet system and a sputtering apparatus. Background In general, the workpiece or substrate may be processed by processes such as machining, cladding, heating, etching, and/or structural changes. The method for coating the substrate is, for example, cathodic atomization (so-called sputtering), which is of the Physical Vapor Deposition (PVD) type. For example, one or more layers may be deposited on the substrate by means of sputtering (i.e. by a sputtering process). For this purpose, the plasma-forming gas can be ionized by means of a cathode, wherein the material to be deposited (target material) can be atomized by means of the plasma formed here. The atomized target material may then be directed to a substrate where the target material may be deposited and formed into a layer. Modifications to the cathode atomisation are sputtering by means of a magnetron, so-called magnetron sputtering, or so-called reactive magnetron sputtering. The formation of the plasma can be supported here by means of a magnetic field. For generating the magnetic field, a magnet system may be provided at the target material or at the cathode (also called magnetron cathode) such that a toroidal plasma channel, a so-called track, may be formed at the target material surface (target surface), in which plasma may be formed. Here, the target material may be atomized in a region (also referred to as an atomization region) exposed to plasma in the plasma channel. During reactive magnetron sputtering, the atomized target material additionally undergoes a chemical reaction and the reaction product formed therefrom is deposited as a layer on a substrate. The spatial distribution of the plasma channels and the associated rate of atomization are very sensitive to the spatial distribution of the magnetic field. Therefore, the magnet system is of particular importance for various process characteristics, such as process stability, reproducibility, target utilization and uniformity. In this context, there is a basic need for improvements, such as simplifying the magnet system and/or reducing the disturbing effects. Disclosure of Invention According to various embodiments, it is clearly recognized that deflection of the magnet system can be a variable of influence of such interference. More precisely, the deflection of the magnet system is typically greater than the deflection of the target. Because of this, the distance between the magnet system and the target varies with the target length during target consumption, with the distance being greatest or smallest, depending on the direction of gravity, just in the middle. The main component of a tubular magnetron is a magnet system that generates a magnetic field (i.e., a magnetic field) to form a track. The strength of the magnetic field over the length of the tubular target has a significant effect on the uniformity of the functional layer deposited on the substrate. The layer uniformity can thus be specifically set by means of the change in the field strength in the individual regions. For this reason, the magnet system is generally designed such that the distance between the magnet and the target surface can be set. Because of the limited adjustability of the magnet height difference, attempts have been made to achieve as uniform a state as possible in the magnet system and the environment, such as a uniform pressure distribution, which likewise has an effect on the uniformity of the functional layer. However, in this way, other deviations, such as deflection of the components, for example of the tubes and the carrier between the support points, due to gravity, can only be reduced to a limited extent, since the distance between the support points cannot generally be selected without limitation and the influence factors on the deflection (bending stiffness and dead weight) cannot be set arbitrarily. Here, a tubular target is exemplified. The span of the support points (by means of the end blocks) is preset by the substrate width. The carrier tube is self-supporting between the end blocks and flexes in the direction of gravity. In a carrier having a uniform mass distribution over the length, the deflection (v) is proportional to the specific mass (q) divided by the modulus of elasticity (E) times the moment of area inertia (I) according to the following relationship: v~q/E*I。 Here, the amount (e.g., thickness) of the target material has an effect on q and I, and the type of target material has an effect on q and E. Thus, deflection of the target is a function of the type and amount of target material, wherein the amount of target material decreases over time due to its consumption. Conversely, the magnet system in the target tube has a time-constant deflection between the support points, since the influence factors on the deflection remain unchanged under normal conditions. It follows that the relative orientatio