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CN-116133498-B - Preparation method of stretchable flexible thermoelectric generator

CN116133498BCN 116133498 BCN116133498 BCN 116133498BCN-116133498-B

Abstract

The invention discloses a preparation method of a stretchable flexible thermoelectric generator, which comprises the steps of preparing a metal mask abc and a stretchable polyimide substrate, simultaneously depositing tungsten and Bi 0.5 Sb 1.5 Te 3 on the polyimide substrate covered by the metal mask a by using a magnetron sputtering method under Ar atmosphere, connecting a tungsten target with a radio frequency power supply, wherein the power is 10W, the Bi 0.5 Sb 1.5 Te 3 target is connected with a direct current power supply, the power is 32W, the cavity pressure of the magnetron sputtering device is lower than 5X 10 ‑4 Pa, the doping temperature is 250 ℃, using the obtained film as a substrate b, depositing Bi 2 Te 2.7 Se 0.3 on the substrate b covered by the metal mask b by using the magnetron sputtering method under Ar atmosphere at room temperature, connecting the Bi 2 Te 2.7 Se 0.3 target to the direct current power supply, the power is 35W, the cavity pressure of the magnetron sputtering device is lower than 2X 10 ‑4 Pa, the sputtering temperature is 70 ℃, using the obtained film as a substrate C, and depositing Au on the substrate C covered by the metal mask C by using the magnetron sputtering method under Ar atmosphere to obtain the stretchable flexible thermoelectric generator.

Inventors

  • ZHANG JICAI
  • LIU ZERUI
  • LIU TING
  • LU YONG
  • XU FUJIAN

Assignees

  • 北京化工大学

Dates

Publication Date
20260508
Application Date
20230131

Claims (3)

  1. 1. A method of making a stretchable flexible thermoelectric generator, comprising: 1) Preparing a metal mask plate a, a metal mask plate b, a metal mask plate c and a stretchable polyimide substrate; 2) Using a magnetron sputtering method, simultaneously depositing tungsten and Bi 0.5 Sb 1.5 Te 3 on a polyimide substrate covered by a metal mask plate a in Ar atmosphere, wherein a tungsten target is connected with a radio frequency power supply, the power is 10W, a Bi 0.5 Sb 1.5 Te 3 target is connected with a direct current power supply, the power is 32W, the cavity pressure of a magnetron sputtering device is lower than 5 multiplied by 10 -4 Pa, and the doping temperature is 250 ℃; 3) Using the film obtained in the step 2) as a substrate b, using a magnetron sputtering method, depositing Bi 2 Te 2.7 Se 0.3 on the substrate b covered by the metal mask plate b in Ar atmosphere at room temperature, connecting a Bi 2 Te 2.7 Se 0.3 target to a direct current power supply, wherein the power is 35W, the cavity pressure of a magnetron sputtering device is lower than 2 multiplied by 10 -4 Pa, and the sputtering temperature is 70 ℃; 4) Taking the film obtained in the step 3) as a substrate c, and depositing Au on the substrate c covered by the metal mask plate c in Ar atmosphere by using a magnetron sputtering method to obtain a stretchable flexible thermoelectric generator; The pressure of the workbench in the step 2) is 0.5-3 Pa, and the Ar flow is 20-80 Sccm; the metal mask plate a in the step 1) is formed by periodically arranging 19 rectangular patterns with the center width of 0.84 mm by 2.61 mm and 36 irregular patterns with the center width of 0.98 mm and the height of 2.9 mm, the metal mask plate b is formed by periodically arranging 54 irregular patterns with the center width of 0.98 mm and the height of 2.9 mm, the metal mask plate c is formed by periodically arranging 108 irregular patterns with the center width of 0.98 mm and the height of 2.9 mm and 36 irregular patterns with the center width of 0.98 mm and the height of 1.5 mm, and the cutting stripe length of the stretchable polyimide substrate a is 6 mm, the stripe longitudinal interval is 3 mm and the transverse interval is 1.5 mm; the pressure of the workbench from the step 2) to the step 4) is 0.5 Pa to 3 Pa, and the Ar flow is 20 Pa to 80 Sccm.
  2. 2. The method of claim 1, wherein the Bi 0.5 Sb 1.5 Te 3 target in step 2) has a Bi 0.5 Sb 1.5 Te 3 purity of 99.999%, the tungsten target has a tungsten purity of 99.94%, and the Au target has an Au purity of 99.99%.
  3. 3. The method of claim 1, wherein the Bi 0.5 Sb 1.5 Te 3 target of steps 2) to 4) has a purity of 99.999%, the tungsten target has a purity of 99.94%, the Bi 2 Te 2.7 Se 0.3 target has a purity of 99.999%, the Bi 2 Te 2.7 Se 0.3 target has a purity of 99.999%, and the Au target has a purity of 99.99%.

Description

Preparation method of stretchable flexible thermoelectric generator Technical Field The invention belongs to the field of thermoelectric materials, and relates to a preparation method of a stretchable flexible thermoelectric generator. Background With the increasing demand of wearable electronic devices, thermoelectric materials have also entered a golden period of vigorous development. Thermoelectric materials can achieve direct interconversion of thermal and electrical energy. The human skin is a stable heat source, and can continuously release heat into the environment at the power of 50-150W/m 2. The thermoelectric device prepared based on the thermoelectric material can continuously provide energy for the wearable electronic equipment by means of heat emitted by a human body. Wearable electronic devices have the advantage of being miniature, flexible, lightweight, applied to the skin of a person or assembled to the surface of clothing for various functions. This requires that the thermoelectric device has elasticity, is well fitted to the curved surface of the human skin, survives the frequent bending process, and efficiently converts the temperature difference between the human temperature (typically 37 ℃) and the ambient temperature into electrical energy. This makes developing high performance flexible thermoelectric devices a very challenging task. Compared with a block type thermoelectric generator, the thin film type thermoelectric generator has the advantages of being flexible, small in thickness, light in weight and the like, and compared with a fabric type thermoelectric generator, the thin film type thermoelectric generator has the advantages of being stable in output, good in performance and the like. However, the thin film thermoelectric generator is only bent in one direction and absorbs energy mainly in a planar direction, and is not suitable for collecting heat on a bent human body surface. Therefore, how to make the thin film structure catch the temperature variation in the vertical direction and output a higher output voltage is a key issue in the current research. Bismuth telluride based materials have good thermoelectric performance as thermoelectric leg materials at room temperature, and are the preferred materials for wearable devices. However, in bismuth telluride-based thermoelectric materials, the thermoelectric performance of P-type materials is significantly better than that of N-type materials. However, one practical thermoelectric device is fabricated from P-type and N-type thermoelectric materials that are commonly assembled and are required to have properties as close as possible. However, the weak thermoelectric performance of the N-type bismuth telluride material makes it unable to take on the task of assembling thermoelectric devices, which hinders the application of bismuth telluride-based thermoelectric power generation devices. Disclosure of Invention In view of this, the present invention provides a method of making a stretchable flexible thermoelectric generator. The invention specifically provides the following technical scheme: a method for preparing a stretchable flexible thermoelectric generator, 1) Preparing a metal mask plate a, a metal mask plate b, a metal mask plate c and a stretchable polyimide substrate a; 2) Using a magnetron sputtering method, and simultaneously depositing tungsten and Bi 0.5Sb1.5Te3 on a stretchable polyimide substrate a covered by a metal mask plate a in Ar atmosphere, wherein a tungsten target is connected with a radio frequency power supply, the power is 10W, a Bi 0.5Sb1.5Te3 target is connected with a direct current power supply, the power is 32W, the cavity pressure of a magnetron sputtering device is lower than 5 multiplied by 10 -4 Pa, and the doping temperature is 250 ℃; 3) Using the film obtained in the step 2) as a substrate b, using a magnetron sputtering method, depositing Bi 2Te2.7Se0.3 on the substrate b covered by the metal mask plate b in Ar atmosphere at room temperature, connecting a Bi 2Te2.7Se0.3 target to a direct current power supply, wherein the power is 35W, the cavity pressure of a magnetron sputtering device is lower than 2 multiplied by 10 -4 Pa, and the sputtering temperature is 70 ℃; 4) And 3) taking the film obtained in the step 3) as a substrate c, and depositing Au on the substrate c covered by the metal mask plate c by using a magnetron sputtering method under Ar atmosphere. Further, the metal mask plate a in the step 1) is formed by periodically arranging 19 rectangular patterns with the center width of 0.84mm and the height of 2.9mm and 36 irregular patterns with the center width of 0.98mm and the height of 2.9mm, the metal mask plate b is formed by periodically arranging 54 irregular patterns with the center width of 0.98mm and the height of 2.9mm, the metal mask plate c is formed by periodically arranging 108 irregular patterns with the center width of 0.98mm and the height of 2.9mm and 36 irregula