CN-116156752-B - High-current-density vertical power supply and distribution module and packaging process thereof

CN116156752BCN 116156752 BCN116156752 BCN 116156752BCN-116156752-B

Abstract

The invention discloses a high-current-density vertical power supply and distribution module and a packaging process thereof, belongs to the technical field of microelectronic packaging, and solves the problems of large size, low current density, high thermal resistance of embedded chip packaging, difficult heat dissipation and overhigh junction temperature of the power supply and distribution module in the prior art. In the module, a bottom electrode, a package substrate, a power device and a top electrode are stacked, and an integrated circuit chip and a passive device are buried inside the package substrate and stacked in a vertical direction. The packaging process comprises the steps of embedding an integrated circuit chip into a first core board, embedding a passive device into a second core board, pressing to form a packaging substrate, drilling holes, hole wall metallization and hole plugging on the packaging substrate to obtain an integral to be packaged, and encapsulating, grinding and surface metallization on the integral to be packaged. The module and the packaging process can effectively improve the current density.

Inventors

You Xiangan
Hou fengze
WANG QIDONG
DING FEI
FANG ZHIDAN
CHEN CHUAN

Assignees

中国科学院微电子研究所

Dates

Publication Date: 20260508
Application Date: 20221011

Claims (8)

1. The high-current-density vertical power supply and distribution module is characterized by comprising a packaging substrate, a power device, a side electrode, a bottom electrode, a top electrode, an integrated circuit chip and a passive device; the bottom electrode, the packaging substrate, the power device and the top electrode are sequentially stacked from bottom to top; The side electrode is positioned on the side surface of the packaging substrate, and the top electrode is connected with the packaging substrate through the side electrode; The integrated circuit chip and the passive device are embedded in the package substrate and are arranged in a stacked manner in the vertical direction; The high-current-density vertical power supply and distribution module further comprises an inductor, wherein the inductor is positioned between the top electrode and the power device; the projection area of the inductor on the surface of the packaging substrate is not more than the area of the surface of the packaging substrate, and the height between the bottom of the inductor and the surface of the packaging substrate is greater than or equal to the mounting height of the power device.
2. The high current density vertical power module of claim 1 further comprising a heat sink disposed on a side of the power device.
3. The high current density vertical power supply and distribution module of claim 2 wherein the heat sink is in direct contact with the power device through an insulating thermally conductive layer.
4. The high current density vertical power supply and distribution module according to claim 3, wherein the material of the insulating and heat conducting layer is a heat conducting resin.
5. The high current density vertical power supply and distribution module of claim 1, wherein the side electrodes, top electrodes and/or bottom electrodes act as signal ports and/or power ports.
6. The high current density vertical power supply and distribution module of claim 1 wherein the side electrodes are directly connected to metal layers inside the package substrate.
7. The high current density vertical power supply and distribution module of claim 1 wherein the maximum power of the integrated circuit chip is no more than 3W and the maximum power consumption of the power device is 10W or more.
8. A packaging process for a high current density vertical power supply and distribution module according to any one of claims 1 to 7, comprising the steps of: providing a first core board and a second core board, embedding the integrated circuit chip in the first core board, and embedding the passive device in the second core board; Pressing the first core plate and the second core plate to form a packaging substrate; Drilling holes on the lower surface of the packaging substrate, carrying out hole wall metallization on the hole wall, and plugging holes by adopting a solder resist material, so as to form a bottom electrode on the lower surface of the packaging substrate, thereby obtaining the whole to be packaged; Encapsulating the whole to be encapsulated to obtain an encapsulated whole; grinding the whole package until the side wall of the package substrate is exposed; And carrying out surface metallization on the whole ground package to form a side electrode and a top electrode, thereby obtaining the high-current-density vertical power supply and distribution module.

Description

High-current-density vertical power supply and distribution module and packaging process thereof Technical Field The invention belongs to the technical field of microelectronic packaging, and particularly relates to a high-current-density vertical power supply and distribution module and a packaging process thereof. Background Under the traction of high calculation force density, high energy efficiency ratio and functional integration requirements, the power supply and distribution modes of application systems such as high-performance calculation, millimeter waves and the like are required to be changed from a traditional horizontal structure to a vertical structure, and the power consumption density of a load chip is required to be higher than 1A/mm 2. However, the power supply and distribution module in the traditional horizontal power supply and distribution structure has large volume size and low current density (less than or equal to 0.3A/mm 2), and cannot meet the structural requirements that the module area in the vertical power supply and distribution system does not exceed the area of a load chip and the module port and the pins of the load chip are vertically interconnected. Disclosure of Invention In view of the above analysis, the invention aims to provide a high-current-density vertical power supply and distribution module and a packaging process thereof, which solve the problems of large size, low current density, high thermal resistance of embedded chip packaging, difficult heat dissipation and overhigh junction temperature of a power supply and distribution module in a horizontal power supply and distribution structure in the prior art. The aim of the invention is mainly realized by the following technical scheme: The invention provides a high-current-density vertical power supply and distribution module which comprises a packaging substrate, a power device, side electrodes, a bottom electrode, a top electrode, an integrated circuit chip and a passive device, wherein the bottom electrode, the packaging substrate, the power device and the top electrode are sequentially stacked from bottom to top, the side electrodes are positioned on the side face of the packaging substrate, the top electrode is connected with the packaging substrate through the side electrodes, the integrated circuit chip and the passive device are embedded in the packaging substrate, and the integrated circuit chip and the passive device are stacked in the vertical direction. Further, the high-current-density vertical power supply and distribution module further comprises a heat dissipation piece arranged on the side face of the power device. Further, the heat dissipation piece comprises a heat dissipation substrate and a plurality of heat dissipation columns, wherein a net-shaped groove is formed in one face, facing away from the power device, of the heat dissipation substrate, the heat dissipation columns are respectively inserted into the net-shaped groove and are in sliding connection with the net-shaped groove, groove wall protrusions are arranged on the side wall of the net-shaped groove, column wall protrusions are arranged at one end, inserted into the net-shaped groove, of each heat dissipation column, and the column wall protrusions are located between the groove bottom of the net-shaped groove and the groove wall protrusions. Further, the heat dissipation piece is in direct contact connection with the power device through the insulating heat conduction layer. Further, the insulating heat conducting layer is made of heat conducting resin. Further, the side electrode, the top electrode and/or the bottom electrode serve as signal ports and/or power ports. Further, the side electrode is directly connected with the metal layer inside the package substrate. Further, the maximum power of the integrated circuit chip is not more than 3W, and the maximum power consumption of the power device is more than 10W. Further, the high current density vertical power supply and distribution module further comprises an inductor, wherein the inductor is located between the top electrode and the power device. Further, the projected area of the inductor on the surface of the packaging substrate does not exceed the area of the surface of the packaging substrate, and the height of the bottom of the inductor from the surface of the packaging substrate is larger than or equal to the mounting height of the power device. The invention also provides a packaging process of the high-current-density vertical power supply and distribution module, which is used for packaging the high-current-density vertical power supply and distribution module and comprises the following steps: providing a first core board and a second core board, embedding the integrated circuit chip in the first core board, and embedding the passive device in the second core board; Pressing the first core plate and the second core plate to form a packaging substrate; Drilling ho