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CN-116165503-B - Temperature calibration method for temperature measuring device of semiconductor equipment

CN116165503BCN 116165503 BCN116165503 BCN 116165503BCN-116165503-B

Abstract

The invention relates to a temperature calibration method of a temperature measuring device for semiconductor equipment, which comprises the following steps of S1, providing the semiconductor equipment, S2, obtaining the corresponding relation between the growth rate of an epitaxial layer and the temperature, S3, primarily calibrating the power, S4, carrying out epitaxial layer growth at a first process temperature T 1 to obtain a first growth rate K 1 , obtaining a first actual temperature T 1 corresponding to the first growth rate K 1 according to the corresponding relation in the step S2, obtaining the temperature difference delta T 1 between the first actual temperature T 1 and the first process temperature T 1 , S5, obtaining an nth process temperature T n near the first process temperature, obtaining the temperature difference delta T n between the nth actual temperature T n and the nth process temperature T n , S6, repeatedly executing the step S5, and obtaining the average value of the temperature differences With And S7, repeatedly executing the steps S4-S6, and stopping when the delta T is smaller than a set threshold value. The invention has the advantages of high calibration accuracy, strong operability and the like.

Inventors

  • YE BIN

Assignees

  • 江苏天芯微半导体设备有限公司

Dates

Publication Date
20260508
Application Date
20230215

Claims (14)

  1. 1. A method for calibrating the temperature of a temperature measuring device for a semiconductor device, comprising the steps of: S1, providing a semiconductor device, wherein the semiconductor device comprises a cavity, a first electrode and a second electrode, wherein the cavity comprises a base for bearing a substrate; the upper heating device and the lower heating device are used for providing heat radiation for the cavity, and the temperature in the cavity is regulated by regulating the power of the upper heating device and the power of the lower heating device; the temperature measuring device comprises a first temperature measuring instrument arranged above the cavity and a second temperature measuring instrument arranged below the cavity; s2, obtaining a corresponding relation between the growth rate of the epitaxial layer and the temperature, wherein the temperature is in a linear temperature range of 500-850 ℃, and in the linear temperature range, the natural logarithm of the growth rate of the epitaxial layer and the reciprocal of the corresponding temperature are in a linear relation; S3, performing preliminary power calibration, namely calibrating the replaced first thermometer by setting a measured temperature corresponding to power; S4, performing epitaxial layer growth at a first process temperature T 1 to obtain a first growth rate K 1 , and obtaining a first actual temperature T 1 corresponding to the first growth rate K 1 according to the corresponding relation in the step S2 to obtain a temperature difference delta T 1 between the first actual temperature T 1 and the first process temperature T 1 ; S5, taking an nth process temperature T n near the first process temperature, performing epitaxial layer growth at the nth process temperature T n to obtain an nth growth rate K n , and obtaining an nth actual temperature T n corresponding to the nth growth rate K n according to the corresponding relation in the step S2 to obtain a temperature difference delta T n between the nth actual temperature T n and the nth process temperature T n , wherein n=2, 3 and 4. S6, repeatedly executing the step S5 to obtain the average value of the temperature difference delta T 1 、ΔT 2 、……、ΔT N To take the following steps Calibrating a first process temperature T 1 , a second process temperature T 2 , an N process temperature T N of the replaced first thermometer; S7, repeatedly executing the steps S4-S6 when Stopping when the set threshold value is smaller than the set threshold value.
  2. 2. The method for temperature calibration of a temperature measurement device for a semiconductor apparatus according to claim 1, wherein the set threshold value is 0.95 ℃.
  3. 3. The method for calibrating temperature of a temperature measuring device for a semiconductor device according to claim 1, wherein in the step S3, preliminary power calibration is performed, specifically, the upward and downward heating devices respectively supply corresponding first and second set powers, respectively obtain first and second measured temperatures corresponding to the first and second thermometers at the corresponding set powers, respectively, replace the first thermometer, and the upward and downward heating devices respectively supply the corresponding first and second set powers to calibrate the replaced first thermometer at the corresponding first measured temperatures.
  4. 4. The method for calibrating the temperature of the temperature measuring device for the semiconductor equipment according to claim 1, wherein in the step S2, the corresponding relation between the epitaxial layer growth rate and the temperature is obtained, specifically, the process gas is introduced into the cavity to perform epitaxial layer growth on the substrate, and the epitaxial layer growth rates of different temperature points in the linear temperature range are respectively calculated to obtain the corresponding relation between the epitaxial layer growth rate and the temperature.
  5. 5. The method according to claim 1, wherein the first process temperature T 1 , the second process temperature T 2 , the first process temperature T N are measured temperatures corresponding to the first thermometer.
  6. 6. The method according to claim 3, wherein in the step S4, the epitaxial layer growth is performed at a first process temperature T 1 which is a first measured temperature.
  7. 7. The method according to claim 6, further comprising calibrating the replaced first thermometer with a first actual temperature T 1 after obtaining the temperature difference Δt 1 in the step S4.
  8. 8. The method according to claim 4, wherein the first process temperature T 1 , the second process temperature T 2 , the N-th process temperature T N are any temperature points in a linear temperature range.
  9. 9. The method for temperature calibration of a temperature measurement device for a semiconductor apparatus according to claim 1, wherein the expression of the correspondence relation is: Wherein K is the growth rate of the epitaxial layer, For a molar gas constant quantity, In order to react to the activation energy, Is a constant value, and is used for the treatment of the skin, And taking different temperatures t and corresponding epitaxial layer growth rates K in the linear temperature range into the expression to obtain the expression of the corresponding relation.
  10. 10. The method for temperature calibration of a temperature measurement device for a semiconductor apparatus according to claim 1, wherein n=5 or 6.
  11. 11. The method for temperature calibration of a temperature measurement device for a semiconductor apparatus according to claim 3, wherein a difference between a duty ratio of the first set power and a duty ratio of the second set power is less than 10%.
  12. 12. A method for calibrating a temperature of a temperature measuring device for a semiconductor device according to claim 3, wherein the difference between the first and second measured temperatures is less than 10 ℃.
  13. 13. The method of claim 1, wherein the process gas used to grow the epitaxial layer comprises one or more of SiH 4 、SiHCl 3 、SiH 2 Cl 2 、SiCl 4 .
  14. 14. The method for temperature calibration of a temperature measurement device for a semiconductor apparatus according to claim 1, wherein the set power ranges from 14kW to 50kW.

Description

Temperature calibration method for temperature measuring device of semiconductor equipment Technical Field The invention relates to the field of semiconductor equipment, in particular to a temperature calibration method for a temperature measuring device of semiconductor equipment. Background In the production of semiconductor chips, a large number of micro-processes are required, wherein the conventional manner is to perform epitaxial processing on a semiconductor substrate by vapor deposition. In the epitaxial processing of the semiconductor substrate, the upper surface temperature of the semiconductor substrate needs to be monitored to ensure that the process temperature of the semiconductor substrate in the epitaxial processing meets the epitaxial growth requirement. The semiconductor substrate may also be referred to as a wafer. Currently, a temperature measuring device in a semiconductor device generally includes an upper and a lower thermometers (usually, infrared thermometers are used as temperature measuring devices) for respectively monitoring temperature changes of a wafer upper surface and a susceptor lower surface during epitaxial processing. The service life of the thermometer is limited, especially the upper thermometer (hereinafter referred to as the first thermometer), and when the semiconductor device runs for a period of time, the upper thermometer needs to be replaced, so that the normal operation of the upper thermometer is ensured. In order to ensure the accuracy of the monitored temperature of the replaced upper thermometer, in the prior art, the method for performing temperature calibration on the replaced upper thermometer uses an unreplaced lower thermometer as a reference for calibration. However, the method has certain defects, particularly the method has larger calibration error, so that the replaced upper thermometer has obvious measurement error. Therefore, there is a need for a temperature calibration method capable of calibrating a temperature measuring device to improve the accuracy of temperature monitoring of semiconductor devices, thereby improving the growth uniformity of wafer epitaxial layers. Disclosure of Invention An object of the present invention is to provide a temperature calibration method for a temperature measuring device of a semiconductor apparatus for solving the problem of accurately calibrating an upper temperature measuring instrument (hereinafter referred to as a first temperature measuring instrument). To achieve the above object, the present invention provides a temperature calibration method for a temperature measuring device of a semiconductor apparatus, comprising: S1, providing a semiconductor device, wherein the semiconductor device comprises a cavity, a first electrode and a second electrode, wherein the cavity comprises a base for bearing a substrate; the upper heating device and the lower heating device are used for providing heat radiation for the cavity, and the temperature in the cavity is regulated by regulating the power of the upper heating device and the power of the lower heating device; the temperature measuring device comprises a first temperature measuring instrument arranged above the cavity and a second temperature measuring instrument arranged below the cavity; s2, obtaining a corresponding relation between the growth rate of the epitaxial layer and the temperature; S3, performing preliminary power calibration, namely calibrating the replaced first thermometer by setting a measured temperature corresponding to power; S4, performing epitaxial layer growth at a first process temperature T 1 to obtain a first growth rate K 1, and obtaining a first actual temperature T 1 corresponding to the first growth rate K 1 according to the corresponding relation in the step S2 to obtain a temperature difference delta T 1 between the first actual temperature T 1 and the first process temperature T 1; S5, taking an nth process temperature T n near the first process temperature, performing epitaxial layer growth at the nth process temperature T n to obtain an nth growth rate K n, and obtaining an nth actual temperature T n corresponding to the nth growth rate K n according to the corresponding relation in the step S2 to obtain a temperature difference delta T n between the nth actual temperature T n and the nth process temperature T n, wherein n=2, 3 and 4. S6, repeatedly executing the step S5 to obtain the average value of the temperature difference delta T 1、ΔT2、……、ΔTNTo be used forCalibrating a first process temperature T 1, a second process temperature T 2, an N process temperature T N of the replaced first thermometer; S7, repeatedly executing the steps S4-S6 when Stopping when the set threshold value is smaller than the set threshold value. Preferably, the set threshold is 0.95 ℃. Preferably, in the step S3, the preliminary power calibration is specifically that the upper and lower heating devices respectively provide corresponding first