CN-116209256-B - Semiconductor device and method for manufacturing the same

CN116209256BCN 116209256 BCN116209256 BCN 116209256BCN-116209256-B

Abstract

The embodiment of the disclosure provides a semiconductor device and a manufacturing method thereof, the manufacturing method comprises the steps of forming a contact hole in a semiconductor substrate, depositing a first contact material on the side wall and the bottom of the contact hole to form a first contact layer, executing an ion implantation process on the first contact layer, wherein the ion implantation process comprises multiple ion implantation steps, in each ion implantation step, an ion beam forms a first preset angle with a perpendicular line of a plane of the semiconductor substrate, the semiconductor substrate is rotated by a second preset angle around the perpendicular line after each ion implantation step, a second contact material filling the contact hole is deposited on the surface of the first contact layer to form a second contact layer, and heat treatment is carried out on the semiconductor substrate to repair the first contact layer and the second contact layer.

Inventors

CHEN CHENG
WANG HONGFU

Assignees

长鑫存储技术有限公司

Dates

Publication Date: 20260512
Application Date: 20230227

Claims (9)

1. A method of manufacturing a semiconductor device, characterized in that, Comprising the following steps: forming a contact hole in a semiconductor substrate; Depositing a first contact material on the side wall and the bottom of the contact hole to form a first contact layer; Performing an ion implantation process on the first contact layer, wherein the ion implantation process comprises multiple ion implantations, and in each ion implantation, an ion beam forms a first preset angle with a vertical line of a plane where the semiconductor substrate is located, the first preset angle is 30-60 degrees, and the semiconductor substrate is rotated by a second preset angle around the vertical line after each ion implantation; Depositing a second contact material filling the contact hole on the surface of the first contact layer to form a second contact layer, wherein a gap is formed in the second contact layer; And carrying out heat treatment on the semiconductor substrate, repairing the first contact layer and the second contact layer, and filling the gap with the repaired first contact layer and second contact layer.
2. The method for manufacturing a semiconductor device according to claim 1, wherein, The second preset angle is 20 °, 30 °, 45 °, 60 °, 90 ° or 180 °.
3. The method for manufacturing a semiconductor device according to claim 1, wherein, The performing an ion implantation process on the first contact layer includes: and carrying out ion implantation on the first contact layer for N times, wherein N is a positive integer, and the second preset angle is gamma, and the product of N and gamma is 360 degrees.
4. The method for manufacturing a semiconductor device according to claim 1, wherein, The ion implantation process is carried out on the first contact layer, and the method further comprises the following steps: and in each ion implantation, moving the semiconductor substrate along a preset direction until the first contact layers in the contact holes are implanted with ions, wherein the preset direction is parallel to the plane of the semiconductor substrate.
5. The method for manufacturing a semiconductor device according to claim 1, wherein, The implanted ions include at least one of germanium, arsenic, and indium.
6. The method for manufacturing a semiconductor device according to claim 1, wherein, The material of the first contact layer comprises silicon or germanium; the material of the second contact layer comprises doped silicon or doped germanium.
7. The method for manufacturing a semiconductor device according to claim 1, wherein, The forming of the contact hole in the semiconductor substrate includes: providing a substrate, wherein the substrate comprises a plurality of active areas which are isolated from each other and are arranged in an array, and the active areas comprise a source area and a drain area; Forming a dielectric layer and a mask layer which are sequentially stacked on the substrate; The contact hole penetrating the mask layer and the dielectric layer and extending into the drain region or the source region is formed.
8. The method for manufacturing a semiconductor device according to claim 7, wherein, The manufacturing method further comprises the steps of: Etching the repaired first contact layer and the repaired second contact layer back until the top surfaces of the repaired first contact layer and the repaired second contact layer are flush with the top surface of the dielectric layer; removing the mask layer; forming a bit line material layer covering the dielectric layer, the repaired first contact layer and the repaired second contact layer; and etching the bit line material layer to form a bit line extending along a first direction, and etching the repaired first contact layer and the repaired second contact layer to form a contact plug, wherein the first direction is parallel to the plane of the semiconductor substrate.
9. A semiconductor device formed by the method of any one of claims 1 to 8, Comprising the following steps: A semiconductor substrate; the contact plug extends into the semiconductor substrate and comprises a first contact part and a second contact part, the first contact part covers the side wall and the bottom of the second contact part, and the second contact part contains doping ions.

Description

Semiconductor device and method for manufacturing the same Technical Field The present disclosure relates to the field of semiconductor technology, and in particular, to a semiconductor device and a method of manufacturing the same. Background The dynamic random access memory (Dynamic Random Access Memory, DRAM for short) is a common memory device, which has the characteristics of high integration level, high read-write speed, low price and the like, and is widely applied to various consumer electronic products such as computers, mobile phones, set top boxes and the like. In the DRAM, a metal line, a capacitor, and the like are connected to an active region through a contact plug. With the shrinking integrated circuits and increasing market demands on DRAM performance, there is a need for contact plugs with better electrical performance, and thus fewer defects in the contact plug are structurally required, which presents new challenges to the existing contact plug process. Disclosure of Invention According to a first aspect of the present disclosure, there is provided a method of manufacturing a semiconductor device, comprising: forming a contact hole in a semiconductor substrate; Depositing a first contact material on the side wall and the bottom of the contact hole to form a first contact layer; performing ion implantation on the first contact layer, wherein the ion implantation comprises ion implantation for a plurality of times, in each ion implantation, an ion beam forms a first preset angle with a vertical line of a plane of the semiconductor substrate, and the semiconductor substrate is rotated by a second preset angle around the vertical line after each ion implantation; depositing a second contact material filling the contact hole on the surface of the first contact layer to form a second contact layer; And carrying out heat treatment on the semiconductor substrate to repair the first contact layer and the second contact layer. In some embodiments, the first preset angle is 30 ° to 60 °, and the second preset angle is 20 °, 30 °, 45 °, 60 °,90 °, or 180 °. In some embodiments, the performing an ion implantation process on the first contact layer includes: and carrying out ion implantation on the first contact layer for N times, wherein N is a positive integer, and the second preset angle is gamma, and the product of N and gamma is 360 degrees. In some embodiments, the number of the contact holes is a plurality, and the performing an ion implantation process on the first contact layer further includes: and in each ion implantation, moving the semiconductor substrate along a preset direction until the first contact layers in the contact holes are implanted with ions, wherein the preset direction is parallel to the plane of the semiconductor substrate. In some embodiments, the implanted ions comprise at least one of germanium, arsenic, and indium. In some embodiments, the material of the first contact layer comprises silicon or germanium; the material of the second contact layer comprises doped silicon or doped germanium. In some embodiments, a second contact material is filled in the contact hole, and in the step of forming a second contact layer, a gap is formed in the second contact layer; After the heat treatment step, the gap is filled with the repaired first contact layer and the repaired second contact layer. In some embodiments, the forming a contact hole in a semiconductor body substrate includes: providing a substrate, wherein the substrate comprises a plurality of active areas which are isolated from each other and are arranged in an array, and the active areas comprise a source area and a drain area; Forming a dielectric layer and a mask layer which are sequentially stacked on the substrate; the contact hole penetrating the mask layer and the dielectric layer and extending into the source region or the drain region is formed. In some embodiments, the method of manufacturing further comprises: Etching the repaired first contact layer and the repaired second contact layer back until the top surfaces of the repaired first contact layer and the repaired second contact layer are flush with the top surface of the dielectric layer; removing the mask layer; forming a bit line material layer covering the dielectric layer, the repaired first contact layer and the repaired second contact layer; and etching the bit line material layer to form a bit line extending along a first direction, and etching the repaired first contact layer and the repaired second contact layer to form a contact plug, wherein the first direction is parallel to the plane of the semiconductor substrate. According to a second aspect of the present disclosure, there is provided a semiconductor device comprising: A semiconductor substrate; the contact plug extends into the semiconductor substrate and comprises a first contact part and a second contact part, the first contact part covers the side wall and the bottom of the second co