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CN-116224198-B - Monitoring method, monitoring system and readable storage medium for CP test

CN116224198BCN 116224198 BCN116224198 BCN 116224198BCN-116224198-B

Abstract

The invention provides a monitoring method, a monitoring system and a readable storage medium for a CP test, wherein when a wafer is divided into a plurality of areas according to the sequence of the CP test, the average value and/or standard deviation of key parameters of qualified grains in each area are obtained, the average value deviation and/or standard deviation of the key parameters of the qualified grains in each area are compared with a base line value, and if the average value deviation and/or the standard deviation is greater than the base line value, the abnormal CP test is judged, so that the monitoring of the CP test can be realized after the CP test of each wafer, and the timely monitoring of the CP test can be realized.

Inventors

  • ZHANG JUN
  • HE YAN
  • MENG XIANWEI

Assignees

  • 绍兴中芯集成电路制造股份有限公司

Dates

Publication Date
20260508
Application Date
20230321

Claims (10)

  1. 1. The monitoring method of the CP test is characterized by comprising the following steps of: dividing the wafer into a plurality of areas according to the sequence of CP test; Obtaining the mean and/or standard deviation of critical parameters of the acceptable grains of each zone, and And comparing the mean deviation and/or standard deviation of key parameters of the qualified grains in each interval with a base line value, and judging that the CP test is abnormal if the mean deviation and/or standard deviation is greater than the base line value.
  2. 2. The method for monitoring the CP test according to claim 1, wherein after determining that the CP test is abnormal, the method for monitoring the CP test further comprises issuing an alarm message.
  3. 3. The method for monitoring the CP testing as recited in claim 1, wherein the step of dividing the wafer into a plurality of areas according to the order of the CP testing comprises dividing the qualified die on the wafer into a plurality of areas according to the order of the CP testing.
  4. 4. The method for monitoring the CP testing according to claim 1, wherein the step of dividing the wafer into a plurality of areas according to the order of the CP testing comprises equally dividing the qualified dies on the wafer into a plurality of areas according to the order of the CP testing.
  5. 5. The CP test monitoring method of claim 1 wherein the step of obtaining the mean and/or standard deviation of key parameters of the acceptable grains for each zone comprises: Acquiring critical parameters of each qualified die of each zone from the CP test data of the wafer-on-chip, and And (3) calculating the average value of the key parameters of all the qualified grains in each region by using an average value calculation method, and/or calculating the standard deviation of the key parameters of all the qualified grains in each region by using a standard deviation calculation method.
  6. 6. The method for monitoring the CP test according to any one of claims 1 to 5, wherein the step of obtaining the mean and/or standard deviation of the key parameters of the acceptable grains of each zone comprises obtaining the mean and/or standard deviation of one or more key parameters of the acceptable grains of each zone.
  7. 7. The CP test monitoring method of any of claims 1-5, wherein the key parameter comprises voltage, current, or resistance.
  8. 8. The CP test monitoring method according to any one of claims 1-5, wherein the base line values include a first base line value and a second base line value, where the first base line value is used for comparing with the mean deviation, the first base line value is a precision related value of the test machine, the second base line value is used for comparing with the standard deviation, and the second base line value is an empirical value or a standard deviation related value of a key parameter of a reference piece.
  9. 9. The CP test monitoring system is characterized by comprising a processor and a memory, wherein a program is stored in the memory, and when the program is executed by the processor, the CP test monitoring method according to any one of claims 1-8 is implemented.
  10. 10. A readable storage medium having a program stored thereon, wherein the program, when executed, implements the CP test monitoring method according to any one of claims 1 to 8.

Description

Monitoring method, monitoring system and readable storage medium for CP test Technical Field The present invention relates to the field of semiconductor technologies, and in particular, to a CP test monitoring method, a CP test monitoring system, and a readable storage medium. Background In the semiconductor processing technology, the production process of the Chip is very complex, the whole Wafer-flowing process involves tens of or even more steps such as photoetching, etching, material deposition, ion implantation and the like, each step may introduce manufacturing defects or cause fluctuation of process characteristic parameters such as resistance and capacitance, therefore, after the manufacturing is finished, partial non-compliant crystal grains (die) may exist on a Wafer (Wafer), the crystal grains need to be screened through a CP (Chip Probe) test, and the proportion of qualified products to the total number is the Chip yield. Specifically, the CP test on the wafer is implemented by a test machine (Tester), and during the test, the test machine may sporadically test abnormality, such as poor contact, damage of the test machine, and the like. In the case of a qualified chip yield, attention is often not drawn, but this greatly reduces the reliability of the CP test. In the prior art, the abnormality of the test machine is found through the Diagnosis file (Diagnosis), the daily standard wafer monitoring (Golden wafer monitor) or the offline parameter monitoring of the YMS (YIELD MANAGEMENT SYSTEM ), but the monitoring modes have the problem of not being timely enough, and the CP test of a plurality of batches of wafers is influenced when the abnormality of the test machine is found. Therefore, how to monitor CP tests in time is a problem that one skilled in the art needs to solve. Disclosure of Invention The invention aims to provide a monitoring method, a monitoring system and a readable storage medium for a CP test, which are used for solving the problem that the CP test cannot be monitored in time in the prior art. In order to solve the technical problems, the present invention provides a CP test monitoring method, where the CP test monitoring method includes: dividing the wafer into a plurality of areas according to the sequence of CP test; Obtaining the mean and/or standard deviation of critical parameters of the acceptable grains of each zone, and And comparing the mean deviation and/or standard deviation of key parameters of the qualified grains in each interval with a base line value, and judging that the CP test is abnormal if the mean deviation and/or standard deviation is greater than the base line value. Optionally, in the method for monitoring the CP test, after determining that the CP test is abnormal, the method for monitoring the CP test further includes sending out alarm information. Optionally, in the method for monitoring CP test, the step of dividing the wafer into a plurality of areas according to the order of CP test includes dividing the qualified die on the wafer into a plurality of areas according to the order of CP test. Optionally, in the method for monitoring CP test, the step of dividing the wafer into a plurality of areas according to the order of CP test includes equally dividing the qualified die on the wafer into a plurality of areas according to the order of CP test. Optionally, in the CP test monitoring method, the step of obtaining the mean value and/or standard deviation of the key parameters of the qualified grains of each zone includes: Acquiring critical parameters of each qualified die of each zone from the CP test data of the wafer-on-chip, and And (3) calculating the average value of the key parameters of all the qualified grains in each region by using an average value calculation method, and/or calculating the standard deviation of the key parameters of all the qualified grains in each region by using a standard deviation calculation method. Optionally, in the monitoring method of CP test, the step of obtaining the mean and/or standard deviation of the key parameters of the qualified grains of each zone includes obtaining the mean and/or standard deviation of one or more key parameters of the qualified grains of each zone. Optionally, in the monitoring method of CP test, the key parameter includes voltage, current or resistance. Optionally, in the CP test monitoring method, the base line value includes a first base line value and a second base line value, where the first base line value is used to compare with the mean deviation, the first base line value is a precision related value of the test machine, the second base line value is used to compare with the standard deviation, and the second base line value is an empirical value or a standard deviation related value of a key parameter of the reference slice. The invention also provides a monitoring system for the CP test, which comprises a processor and a memory, wherein the memory stores a program, and whe