CN-116288195-B - Sputtering apparatus

CN116288195BCN 116288195 BCN116288195 BCN 116288195BCN-116288195-B

Abstract

The present invention relates to a sputtering apparatus for reducing the frequency of replacement of a shielding member. The sputtering apparatus includes a target that scatters sputtering particles on a substrate, and a shielding member that is located between the substrate and the target and limits a scattering range of the sputtering particles with respect to the substrate during film formation, wherein the shielding member is a rotating body having an outer peripheral surface, and a region of the outer peripheral surface that faces the target is changed by rotation of the rotating body.

Inventors

SUGAWARA HIROAKI
UCHIDA TOSHIHARU

Assignees

佳能特机株式会社

Dates

Publication Date: 20260505
Application Date: 20221212
Priority Date: 20211220

Claims (4)

1. A sputtering apparatus, which comprises a sputtering chamber, the sputtering device is provided with: A target material for scattering sputtering particles toward the substrate, and A shielding member located between the substrate and the target, for limiting a scattering range of the sputtering particles with respect to the substrate during film formation, It is characterized in that the method comprises the steps of, The shielding member is a rotating body having an outer peripheral surface, By rotating the shielding member, a region of the outer peripheral surface facing the target is changed, The sputtering device is provided with: a driving source outputting a driving force for rotating the shielding member, and A control unit that controls the drive source, The target is a rotating target, The drive source is a common drive source that rotates the shielding member and the target simultaneously, The shielding member is a cylindrical rotating body that continuously rotates around a rotation center line during film formation.
2. The sputtering apparatus according to claim 1, wherein, The sputtering apparatus further includes a cooling means for cooling the shielding member.
3. The sputtering apparatus according to claim 1, wherein, The sputtering device is a magnetron sputtering device, The shielding member is maintained at an anodic potential and the target is maintained at a cathodic potential.
4. The sputtering apparatus according to claim 1, wherein, The sputtering apparatus includes a moving member for moving the substrate, the shielding member, and the target relative to each other during film formation.

Description

Sputtering apparatus Technical Field The present invention relates to a sputtering apparatus. Background In the manufacture of organic EL displays and the like, a technique of forming a film on a substrate by a sputtering apparatus is known. As such a sputtering apparatus, a sputtering apparatus is known in which a shielding member is provided between a target and a substrate (for example, patent document 1). The scattering range of the sputtered particles scattered from the target is limited by the shielding member, so that the film thickness can be made uniform, and damage to the underlayer of the substrate can be reduced. Prior art literature Patent literature Patent document 1 Japanese patent application laid-open No. 2019-090083 Disclosure of Invention Problems to be solved by the invention Sputtering particles are deposited on the shielding member by repeating the film forming step. A film is formed on the surface of the shielding member due to the deposition of the sputtered particles. The size of the shielding member changes according to the film thickness, and the limit range of the scattering changes. This becomes a factor of decreasing film formation accuracy. The masking member having a thick film thickness needs to be replaced, but the production needs to be temporarily interrupted for replacement, and if the frequency of replacement is high, productivity is lowered. The invention provides a technology for reducing replacement frequency of a shielding member. Means for solving the problems According to the present invention, there is provided a sputtering apparatus comprising: A target material for scattering sputtering particles toward the substrate, and A shielding member located between the substrate and the target, for limiting a scattering range of the sputtering particles with respect to the substrate during film formation, Wherein, the The shielding member is a rotating body having an outer peripheral surface, By the rotation of the rotating body, a region of the outer peripheral surface facing the target is changed. ADVANTAGEOUS EFFECTS OF INVENTION According to the present invention, a technique for reducing the frequency of replacement of a shielding member can be provided. Drawings Fig. 1 (a) and (B) are schematic views of a sputtering apparatus according to an embodiment of the present invention. Fig. 2 (a) is an explanatory view of a film forming operation, and (B) is a view showing another example of rotation control of the shielding member. Fig. 3 (a) is a diagram showing an example of a rotation mechanism of the target and the shielding member, and (B) is a diagram showing another example of the shape of the shielding member. Fig. 4 (a) is a diagram showing another layout example of the target and the shielding member, and (B) is a diagram showing another example of the relative movement between the substrate and the target and the shielding member. Fig. 5 is a diagram showing another example of the target and the magnet unit. Description of the reference numerals 1 Sputtering device, 6 target, 12 shielding member, 100 substrate. Detailed Description Hereinafter, embodiments will be described in detail with reference to the accompanying drawings. The following embodiments do not limit the invention according to the claims. Although the plurality of features are described in the embodiments, not necessarily all of the plurality of features are essential to the invention, and a plurality of features may be arbitrarily combined. In the drawings, the same or similar structures are denoted by the same reference numerals, and redundant description thereof is omitted. < First embodiment > < Structure of sputtering apparatus > Fig. 1 (a) and (B) are schematic diagrams of a sputtering apparatus 1 according to an embodiment of the present invention, where fig. 1 (a) is a diagram of the sputtering apparatus 1 viewed from the side, and fig. 1 (B) is a diagram of the sputtering apparatus 1 viewed from the top. In each figure, arrow Z represents the up-down direction (gravitational direction), and arrow X and arrow Y represent mutually orthogonal horizontal directions. The sputtering apparatus 1 is a film forming apparatus for forming a film on a substrate 100, and is applicable to, for example, a manufacturing apparatus for manufacturing electronic devices or optical components such as a display device (flat panel display or the like), a thin film solar cell, an organic photoelectric conversion element (organic thin film imaging element), and the like, and particularly, to a manufacturing apparatus for manufacturing an organic EL panel. In the case of application to the manufacture of an organic EL panel, for example, an organic film is formed in advance on the lower surface of the substrate 100, and the sputtering apparatus 1 forms an electrode film by sputtering on top of the organic film. The sputtering apparatus 1 has a box-shaped vacuum chamber 2. The vacuum chamber 2 is connected to a