CN-116298525-B - Electrical contact connection method and system

CN116298525BCN 116298525 BCN116298525 BCN 116298525BCN-116298525-B

Abstract

The invention discloses an electric contact connection method and system. The electric contact connection method comprises the steps of enabling a first probe to be in contact with a first film layer, enabling a second probe to move towards the first film layer, monitoring the resistance value between the first probe and the second probe in real time, monitoring the first mutation of the resistance value, continuing to move the second probe, monitoring the second mutation of the resistance value, and stopping movement of the second probe when the second mutation occurs, wherein the second probe is in contact with the second film layer. According to the electric contact connection method and system provided by the invention, the change condition of the resistance value between the first probe and the second probe is monitored in real time, so that the second probe can accurately descend to the interface of the first film layer and the second film layer, and the second probe and the second film layer can be well electrically connected without damaging the second film layer.

Inventors

ZHANG HUI
LIU YAO
ZHANG FU
Jin Xiansheng

Assignees

合肥本源量子计算科技有限责任公司

Dates

Publication Date: 20260512
Application Date: 20220527
Priority Date: 20211213

Claims (11)

1. A method of electrical contact connection, comprising: penetrating a first probe into an interface of a first film layer and a second film layer, the first probe making electrical contact with the second film layer; Moving the second probe to the first film layer, and monitoring the resistance value between the first probe and the second probe in real time; Monitoring the first abrupt change in the resistance value and continuing to move the second probe; and monitoring the second mutation of the resistance value, and stopping the movement of the second probe when the second mutation occurs, wherein the second probe is in contact with the second film layer.
2. The electrical contact connection method of claim 1, wherein the second film is a superconductor of josephson junction electrode and the first film is an oxide layer of the superconductor.
3. The electrical contact connection method of claim 2, wherein the needle-punching position of the first probe is further away from the josephson junction than the needle-punching position of the second probe.
4. The electrical contact connection method of claim 1, wherein the first probe is caused to penetrate the interface of the first membrane layer and the second membrane layer by monitoring the pressure to which the first probe is subjected.
5. The electrical contact connection method of claim 1, wherein the first abrupt change is a decrease in resistance from above 10mΩ to 10kΩ to 10mΩ.
6. The electrical contact connection method of claim 3, wherein the second abrupt change is a resistance value of the order of 10 1 ~10 2 .
7. The electrical contact connection method of claim 1, wherein the thickness of the first film layer is between 0.1nm and 5 nm.
8. An electrical contact connection system, characterized in that it employs the electrical contact connection method according to any of claims 1-7 for achieving a resistance measurement of josephson junction electrodes, comprising: The displacement adjusting assembly is arranged on the first probe and the second probe; A resistance monitoring module, the first probe and the second probe are connected with the resistance monitoring module, and The first probe and the second probe can respectively and relatively move with the chip displacement table under the drive of the displacement adjusting component; The resistance monitoring module is used for monitoring the detected resistance value in real time and controlling the movement of the displacement adjusting assembly when the resistance value is suddenly changed.
9. The electrical contact-connection system of claim 8, further comprising a micro force sensor disposed on the displacement adjustment assembly, at least the first probe disposed on a head of the micro force sensor.
10. The electrical contact-connection system of claim 8, wherein the first and second probes are tungsten or gold needles, the first and second probe surfaces may be plated with a protective layer, the first probe being thicker than the second probe.
11. The electrical contact-connection system of claim 10, wherein the first probe has a shank diameter of 10-500 μιη, a tip diameter of 0.5-15 μιη, and the second probe has a shank diameter of 5-50 μιη, a tip diameter of 0.2-1 μιη.

Description

Electrical contact connection method and system Technical Field The invention belongs to the field of quantum information, in particular to the field of quantum chip detection, and particularly relates to an electric contact connection method and system. Background The key structure on the superconducting quantum chip is a superconducting qubit, and the key structure of the superconducting qubit is a Josephson junction. Josephson junctions are special devices formed by isolating two electrodes with a thin insulator between them. In order to ensure the performance of the superconducting quantum chip, the frequency parameter of the superconducting quantum bit must be strictly controlled, the normal temperature resistance characterization of the superconducting quantum bit is important information of the reaction frequency parameter, and the resistance of the Josephson junction is the key of the normal temperature resistance characterization of the superconducting quantum bit, so that the resistance of the Josephson junction needs to be accurately measured. At present, a specific resistance measurement scheme for a superconducting quantum chip is not available, and at present, the resistance measurement of the superconducting quantum chip adopts a traditional resistance measurement scheme for a semiconductor chip, namely, a probe is adopted to be inserted into an internal structure of a device to form direct contact to measure the resistance, mainly because an oxide layer is formed on an electrode of a Josephson junction, and the oxide layer is not expected to be generated but is difficult to remove, so that the resistance between the electrodes can be accurately obtained through the oxide layer, otherwise, the existence of the oxide layer can interfere with a measurement result. However, the electrode of the josephson junction is pricked by the probe, which causes the performance loss of superconducting qubits, but the resistance measurement scheme using the semiconductor chip inevitably causes the probe to prick the electrode, and even the probe to prick the electrode seriously, so that the josephson junction is directly damaged. The conventional resistance measurement scheme of the semiconductor chip is not suitable for the superconducting quantum chip. Summary of the invention The invention aims to provide an electric contact connection method and system, which are used for solving the problem that a probe is not easy to accurately contact with a target film in the prior art. To achieve the above and other related objects, the present invention provides the following examples: 1. the present invention provides example 1, an electrical contact connection method, comprising: contacting the first probe with the first membrane layer; moving the second probe to the first film layer, and monitoring the resistance value between the first probe and the second probe in real time; Monitoring the first abrupt change in the resistance value and continuing to move the second probe; And monitoring the second mutation of the resistance value, and stopping the movement of the second probe when the second mutation occurs, wherein the second probe is in contact with the second film layer. 2. The invention provides an example 2 which comprises an example 1, wherein the second film layer is an electrode of a Josephson junction, and the first film layer is an oxide layer on the surface of the electrode. 3. Example 3 provided by the invention includes example 2, wherein the needle insertion location of the first probe is farther from the josephson junction than the needle insertion location of the second probe. 4. Example 4 provided herein includes example 1, wherein the first probe is brought into contact with the first membrane layer by monitoring the pressure to which the first probe is subjected. 5. The example 5 provided by the invention comprises example 1, wherein the first abrupt change is that the resistance value is reduced from more than 1MΩ to 1KΩ to 10KΩ. 6. The example 6 provided by the invention comprises the example 1, wherein the second mutation is that the resistance value is changed to 10 omega-1000 omega. 7. The invention provides an example 7, which comprises an example 1, wherein the thickness of the first film layer is between 0.1nm and 5 nm. 8. Example 8 provided by the present invention is an electrical contact-connection system, comprising: The displacement adjusting assembly is arranged on the first probe and the second probe; A resistance monitoring module, the first probe and the second probe are connected with the resistance monitoring module, and And the first probe and the second probe can respectively and relatively move with the chip displacement table under the driving of the displacement adjusting assembly. 9. The invention provides example 9, including example 8, wherein the resistance monitoring module is configured to monitor the detected resistance value in real time and control movement