Search

CN-116314014-B - Semiconductor structure and manufacturing method thereof

CN116314014BCN 116314014 BCN116314014 BCN 116314014BCN-116314014-B

Abstract

A semiconductor structure and a manufacturing method thereof are disclosed, the manufacturing method comprises the steps of providing a substrate, forming a gate stack layer on the substrate, adsorbing first plasma on the surface of the gate stack layer, forming a plasma layer at least covering the side wall of the gate stack layer, and forming a first dielectric layer at least covering the side wall of the plasma layer, wherein the plasma layer and the first dielectric layer are formed in the same furnace tube.

Inventors

  • WANG XIAOLING

Assignees

  • 长鑫存储技术有限公司

Dates

Publication Date
20260512
Application Date
20230411

Claims (9)

  1. 1. A method of fabricating a semiconductor structure, comprising: Providing a substrate; forming a gate stack layer on the substrate; adsorbing first plasmas on the surface of the grid stacking layer to form a plasma layer at least covering the side wall of the grid stacking layer; Forming a first dielectric layer, wherein the first dielectric layer at least covers the side wall of the plasma layer, and the plasma layer and the first dielectric layer are formed in the same furnace tube; Forming a plasma layer, comprising: the method comprises the steps of providing a furnace tube, wherein the furnace tube comprises a reaction cavity and at least one embedded cavity arranged on the inner wall of the reaction cavity, at least one pair of radio frequency electrodes arranged in parallel are arranged in the embedded cavity, and the radio frequency electrodes are used for dissociating gas introduced into the embedded cavity into plasma; placing the substrate including the gate stack layer within the reaction chamber; and introducing a first source gas into the embedded cavity, and applying a radio frequency signal to the radio frequency electrode to dissociate the first source gas into first plasmas, wherein the first plasmas are adsorbed on the side wall and the upper surface of the grid electrode stacking layer so as to form the plasma layer.
  2. 2. The method of manufacturing according to claim 1, wherein a plurality of shower openings are provided in a side wall of the insert chamber, and a size of the shower opening in an upper portion of the side wall of the insert chamber is larger than a size of the shower opening in a lower portion of the side wall of the insert chamber.
  3. 3. The method according to claim 1, wherein the number of the embedded cavities is plural, and the plurality of the embedded cavities are arranged on the inner wall of the reaction chamber at equal intervals.
  4. 4. The method of manufacturing of claim 1, wherein forming the first dielectric layer comprises: introducing a second source gas into the reaction cavity, wherein the second source gas is adsorbed on the surface of the plasma layer and the upper surface of the substrate; Introducing third source gas into the embedded cavity, and applying radio frequency signals to the radio frequency electrode to dissociate the third source gas into second plasma, wherein the second plasma reacts with the third source gas to form a first sub-layer, and the first sub-layer covers the plasma layer and the substrate; And the steps of introducing second source gas into the reaction cavity, introducing third source gas into the embedded cavity and applying radio frequency signals to the radio frequency electrode are executed again until a first sub-layer with a first preset thickness is formed.
  5. 5. The method of manufacturing of claim 4, wherein after forming the first sub-layer having the first predetermined thickness, the method further comprises: Introducing a fourth source gas into the reaction cavity, wherein the fourth source gas is adsorbed on the surface of the first sub-layer; Introducing a fifth source gas into the reaction cavity, wherein the fifth source gas and the fourth source gas react to form a second sub-layer, and the second sub-layer covers the first sub-layer; And the steps of introducing third source gas into the reaction cavity and introducing fourth source gas into the reaction cavity are executed again until a second sub-layer with a second preset thickness is formed, wherein the first sub-layer and the second sub-layer form the first medium layer.
  6. 6. The method of manufacturing of claim 5, further comprising, after forming the first dielectric layer: Removing the first dielectric layer and the plasma layer which cover the upper surface of the substrate and the top of the grid stacking layer, wherein the reserved plasma layer covers the side wall of the grid stacking layer, and the reserved first dielectric layer covers the side wall of the plasma layer; forming a second dielectric layer, wherein the second dielectric layer covers the upper surface of the substrate, the side wall and the top of the first dielectric layer and the top of the grid stacking layer and the plasma layer; removing part of the second dielectric layer, wherein the reserved second dielectric layer is positioned on the side wall of the substrate, which covers the first dielectric layer; Or after forming the first dielectric layer, further comprising: Forming a second dielectric layer, wherein the second dielectric layer covers the first dielectric layer; and removing part of the second dielectric layer and part of the first dielectric layer, wherein the reserved first dielectric layer covers part of the upper surface of the substrate and part of the plasma layer, and the reserved second dielectric layer is positioned on the first dielectric layer and covers part of the side wall of the first dielectric layer.
  7. 7. A semiconductor structure formed by the method of any of claims 1-6, comprising: A substrate; a gate stack layer on the substrate; a plasma layer comprising a first plasma adsorbed at least to a sidewall of the gate stack; And the first dielectric layer at least covers the side wall of the plasma layer, wherein the plasma layer and the first dielectric layer are formed in the same furnace tube.
  8. 8. The semiconductor structure of claim 7, wherein the gate stack comprises a non-metallic conductive layer and a metallic conductive layer overlying the non-metallic conductive layer, the first dielectric layer on opposite sidewalls of the metallic conductive layer having a first thickness a and a second thickness b, respectively, and the first dielectric layer on opposite sidewalls of the non-metallic conductive layer having a third thickness c and a fourth thickness d, respectively, defining a thickness deviation Δt between a portion of the first dielectric layer on a sidewall of the metallic conductive layer and a portion of the first dielectric layer on a sidewall of the non-metallic conductive layer: Δt=((a+b)-(c+d))/2; wherein the thickness deviation Δt ranges between 0 and 0.2 nm.
  9. 9. The semiconductor structure of claim 7, wherein the first dielectric layer comprises a first sub-layer and a second sub-layer covering the first sub-layer, the first sub-layer having a thickness in a range of 0.3nm to 0.5nm and the second sub-layer having a thickness in a range of 5nm to 15 nm.

Description

Semiconductor structure and manufacturing method thereof Technical Field The present disclosure relates to the field of semiconductor manufacturing, and more particularly, to a semiconductor structure and a method of manufacturing the same. Background Semiconductor structures, such as Metal-Oxide-field effect transistors (MOSFETs), typically include a gate stack layer and a dielectric layer on sidewalls of the gate stack layer, the dielectric layer serving the purpose of protecting the gate stack layer. However, in a practical process, due to the different properties of the layers in the gate stack, the thickness of the dielectric layer formed on the sidewalls of the gate stack tends to be uneven, thereby affecting the stability of the semiconductor structure. Disclosure of Invention The embodiment of the disclosure provides a manufacturing method of a semiconductor structure, which comprises the following steps: Providing a substrate; forming a gate stack layer on the substrate; adsorbing first plasmas on the surface of the grid stacking layer to form a plasma layer at least covering the side wall of the grid stacking layer; And forming a first dielectric layer, wherein the first dielectric layer at least covers the side wall of the plasma layer, and the plasma layer and the first dielectric layer are formed in the same furnace tube. In some embodiments, forming the plasma layer includes: the method comprises the steps of providing a furnace tube, wherein the furnace tube comprises a reaction cavity and at least one embedded cavity arranged on the inner wall of the reaction cavity, at least one pair of radio frequency electrodes arranged in parallel are arranged in the embedded cavity, and the radio frequency electrodes are used for dissociating gas introduced into the embedded cavity into plasma; placing the substrate including the gate stack layer within the reaction chamber; and introducing a first source gas into the embedded cavity, and applying a radio frequency signal to the radio frequency electrode to dissociate the first source gas into first plasmas, wherein the first plasmas are adsorbed on the side wall and the upper surface of the grid electrode stacking layer so as to form the plasma layer. In some embodiments, a plurality of spray openings are provided on the sidewall of the embedded cavity, and the spray openings at the upper portion of the sidewall of the embedded cavity have a larger size than the spray openings at the lower portion of the sidewall of the embedded cavity. In some embodiments, the number of the embedded cavities is plural, and the plurality of the embedded cavities are arranged on the inner wall of the reaction cavity at equal intervals. In some embodiments, forming a first dielectric layer includes: introducing a second source gas into the reaction cavity, wherein the second source gas is adsorbed on the surface of the plasma layer and the upper surface of the substrate; Introducing third source gas into the embedded cavity, and applying radio frequency signals to the radio frequency electrode to dissociate the third source gas into second plasma, wherein the second plasma reacts with the third source gas to form a first sub-layer, and the first sub-layer covers the plasma layer and the substrate; And the steps of introducing second source gas into the reaction cavity, introducing third source gas into the embedded cavity and applying radio frequency signals to the radio frequency electrode are executed again until a first sub-layer with a first preset thickness is formed. In some embodiments, after forming the first sub-layer having the first preset thickness, the method further comprises: Introducing a fourth source gas into the reaction cavity, wherein the fourth source gas is adsorbed on the surface of the first sub-layer; Introducing a fifth source gas into the reaction cavity, wherein the fifth source gas and the fourth source gas react to form a second sub-layer, and the second sub-layer covers the first sub-layer; And the steps of introducing third source gas into the reaction cavity and introducing fourth source gas into the reaction cavity are executed again until a second sub-layer with a second preset thickness is formed, wherein the first sub-layer and the second sub-layer form the first medium layer. In some embodiments, after forming the first dielectric layer, further comprising: Removing the first dielectric layer and the plasma layer which cover the upper surface of the substrate and the top of the grid stacking layer, wherein the reserved plasma layer covers the side wall of the grid stacking layer, and the reserved first dielectric layer covers the side wall of the plasma layer; forming a second dielectric layer, wherein the second dielectric layer covers the upper surface of the substrate, the side wall and the top of the first dielectric layer and the top of the grid stacking layer and the plasma layer; Removing part of the second dielectric layer,