CN-116344472-B - High-temperature high-power hybrid integrated device and packaging method thereof

CN116344472BCN 116344472 BCN116344472 BCN 116344472BCN-116344472-B

Abstract

The invention discloses a high-temperature high-power hybrid integrated device and a packaging method thereof, and belongs to the technical field of integrated circuits. The device comprises a circuit module (1) and a heat storage unit box body (2) with an inner cavity, wherein a groove (21) is formed in the surface of the heat storage unit box body (2), the circuit module (1) is fixedly connected in the groove (21), the circuit module (1) is in contact with the heat storage unit box body (2) to form heat conduction, a first filling body (3) formed by phase change heat storage materials is arranged in the heat storage unit box body (2), and a heat insulation layer (6) is arranged on the outer surface of the heat storage unit box body (2). The invention not only effectively improves the heat radiation capability and the high temperature resistance capability of the circuit module, but also can reduce the temperature of components in the circuit, so that the circuit can still work normally under the condition of adopting components and materials with rated working temperature lower than the environment temperature, thereby avoiding adopting expensive high Wen Yuan components and materials and reducing the economic cost of the circuit module as a whole.

Inventors

XIA JUNSHENG
HOU YUZENG
LI BO
ZANG ZIANG
NIE YUEPING
LI WENCAI
WANG XINGXIN

Assignees

华东光电集成器件研究所

Dates

Publication Date: 20260508
Application Date: 20221130

Claims (6)

1. The high-temperature high-power hybrid integrated device is characterized by comprising a circuit module (1) and a heat storage unit box body (2) provided with an inner cavity, wherein a groove (21) and a filling and sealing opening (24) for filling phase-change heat storage materials are arranged on the top side surface of the heat storage unit box body (2), a heat conducting opening (22) is arranged at the bottom of the groove (21), the heat conducting opening (22) is communicated with the inner cavity, the bottom of the groove (21) is fixedly connected with the circuit module (1), the lower end of the circuit module (1) is covered with the heat conducting opening (22), a first filling body (3) formed by the phase-change heat storage materials is arranged in the inner cavity of the heat storage unit box body (2), and the first filling body (3) is in contact with the circuit module (1) through the heat conducting opening (22) to form heat conduction; The side wall of the groove (21) is provided with a flow guide opening (23) communicated with the inner cavity, a gap is formed between the side wall of the groove (21) and the circuit module (1), a second filling body (4) formed by phase change heat storage materials is arranged at the gap, the second filling body (4) is contacted with the side wall of the groove (21) and the side wall of the circuit module (1) and covers the exposed surface of the circuit module (1), the second filling body (4) is contacted with the first filling body (3) through the flow guide opening (23) to form heat conduction, and the first filling body and the second filling body are integrally formed; The heat insulation layer (6) is arranged on the outer surface of the heat storage unit box body (2) and the exposed surface of the second filling body (4); The circuit module (1) comprises a metal shell (11) and pins (14) with one ends penetrating into the metal shell (11), wherein a ceramic substrate (12) is fixedly connected in the metal shell (11), a group of assembly grooves (13) are formed in the ceramic substrate (12), a metallization layer is arranged at the bottom of each assembly groove (13), nano silver paste is arranged on the metallization layer, the assembly grooves (13) are bonded with a chip through the nano silver paste, gaps are formed in the side walls of the chip and the walls of the assembly grooves (13), the gaps are filled and bonded through the nano silver paste, and the upper surface of the chip is flush with the upper surface of the ceramic substrate (12); The extending ends of the pins are bonded with the ceramic substrate (12) and/or the chip through bonding wires (17).
2. The high-temperature high-power hybrid integrated device of claim 1, wherein the phase-change heat storage material is a material with high volume enthalpy and comprises high-carbon sugar alcohol or pentaerythritol.
3. The high-temperature high-power hybrid integrated device as claimed in claim 1, wherein the bonding area of the extending end of the pin (14) is a flat structure, the flat structure is provided with an upper plane and a lower plane, the upper plane is a bonding surface, the lower plane is welded and fixed with the ceramic strip (16), and the ceramic strip (16) is welded in the metal shell (11).
4. The high-temperature high-power hybrid integrated device according to claim 3, wherein when the bonding wire is used for the circulation of small current, the bonding wire (17) is a gold wire with an insulating layer on the surface, a first bonding point of the bonding wire (17) adopts spherical bonding and is positioned in a bonding area of a pin, a second bonding point is a composite bonding structure, the composite bonding structure comprises a first bonding part which is a wedge-shaped bonding part, the bonding part is positioned in a ceramic substrate (12) and/or a chip bonding area, and a second bonding part which is a spherical bonding part is positioned above the wedge-shaped bonding part; when the bonding wire is used for large current circulation, the bonding wire (17) is a thick aluminum wire with gold-plated surface, a first bonding point is positioned in a bonding area of a pin, a second bonding point is positioned on the surface of a composite conduction band on the surface of the ceramic substrate, the composite conduction band is composed of two layers of conduction bands, the first layer of conduction band is a silver-palladium conductor, the second layer of conduction band is a gold conductor, the second layer of conduction band covers the first layer of conduction band, and gold-plated thick aluminum wire can be bonded with cash-Jin Tongzhi on the surface of the ceramic substrate during bonding.
5. The method of packaging a high temperature high power hybrid integrated device of claim 4, comprising the steps of: S1, manufacturing a circuit module (1) packaged by a metal shell; s2, coating nano silver paste on the bottom of the groove (21), and sintering the circuit module (1) in the groove (21) through the nano silver paste to form fixed connection between the circuit module (1) and the heat storage unit box body (2); S3, placing the heat storage unit box body (2) so that a filling and sealing opening (24) is upwards, filling phase-change heat storage materials into the heat storage unit box body (2) through the filling and sealing opening (24), enabling the phase-change heat storage materials to enter the heat storage unit box body (2), enabling the phase-change heat storage materials to flow into a gap between the side wall of the groove (21) and the circuit module (1) through the flow guide opening (23) and cover the top surface of the circuit module (1), and sequentially forming a first filling body (3) and a second filling body (4) correspondingly; s4, a heat insulation layer (6) is coated on the outer surface of the heat storage unit box body (2) and the exposed side surface of the second filling body (4) together.
6. The method for packaging a high-temperature high-power hybrid integrated device according to claim 5, wherein the step S1 comprises: 1) A ceramic strip (16) is welded and fixed in the metal shell (11), the pins extend into the metal shell (11), and the lower surface of the extending end flat structure of the pins is welded and fixed with the ceramic strip (16); 2) The ceramic substrate (12) is welded in the metal shell (11), the chip is fixedly connected in the assembly groove (13) of the ceramic substrate (12), and the upper surface of the chip is level with the upper surface of the ceramic substrate (12), wherein the metallized layer on the bottom surface of the assembly groove (13) is coated with nano silver paste, and the chip is adhered in the assembly groove (13) through the nano silver paste; 3) Bonding wire bonding, namely bonding the lead extending end with the ceramic substrate and/or the chip by using a bonding machine; When the bonding wire is used for flowing small current, the gold wire with the insulating layer on the surface is used as the bonding wire (17), firstly, the bonding machine bonds the bonding wire (17) in a bonding area of a pin in a spherical bonding mode, the bonding point is a first bonding point, then, the bonding machine bonds the bonding wire (17) in a ceramic substrate (12) and/or a chip bonding area in a composite bonding structure, and the bonding point is a second bonding point, wherein the composite bonding comprises the steps of firstly performing primary bonding in a wedge bonding mode and then performing secondary bonding in a spherical bonding mode above the wedge bonding; When the bonding wire is used for large current circulation, the surface gold-plated thick aluminum wire is used as the bonding wire (17), firstly the bonding wire (17) is bonded on a bonding area of a pin by a bonding machine, the bonding point is used as a first bonding point, then the bonding wire (17) is bonded on the surface of a composite conduction band on the surface of the ceramic substrate by the bonding machine, the bonding point is used as a second bonding point, wherein the composite conduction band is composed of two layers of conduction bands, the first layer of conduction band is a silver-palladium conductor, the second layer of conduction band is a gold conductor, the second layer of conduction band is covered on the first layer of conduction band, and gold-plated thick aluminum wire can be bonded on the surface of the ceramic substrate by cash-Jin Tongzhi during bonding; 4) The open side of the metal shell (11) is covered by a welded cover plate (15).

Description

High-temperature high-power hybrid integrated device and packaging method thereof Technical Field The invention relates to the technical field of integrated circuits, in particular to a high-temperature high-power hybrid integrated device and a packaging method thereof. Background The high-temperature high-power circuit is characterized by having high-temperature requirements and power requirements, specifically, the high-power requirements exist in the circuit, and the high-temperature environment requirements exist in the circuit. The hybrid integrated circuit generally adopts a ceramic substrate and a metal packaging structure, and a typical power device is a semiconductor power chip, the bottom surface of the power chip is assembled on the surface of the ceramic substrate through welding, and the ceramic substrate is welded on the inner surface of a base of the metal shell through welding. The chip and the substrate, the chip and the outer lead of the shell and the substrate and the outer lead of the shell are electrically connected by adopting a wire bonding mode, wherein gold wire bonding is adopted under the condition of low current, and thick aluminum wire bonding is adopted under the condition of high current. Typically, such assembled package structures and processes are well suited for power hybrid integrated circuit products. At present, high temperature resistance measures adopted by high-temperature high-power circuits mainly improve high temperature resistance of components in the circuits, namely, high temperature chips, high temperature capacitors, resistors and other passive elements are adopted, and meanwhile, high temperature resistance assembly materials and processes are considered. However, because the adopted high Wen Yuan devices, materials and processes have limited high temperature resistance, for example, the high temperature resistance range of components such as chips can only reach 150-175 ℃, and for the severe conditions of high power inside and high temperature outside, the temperature of a circuit can be continuously increased after long-time operation, so that the temperature is obviously higher than the ambient temperature (for example, 150-175 ℃ and even more than 200 ℃), and therefore, the components in the circuit cannot work normally, and the used partial materials and processes cannot maintain normal performance. On the other hand, from the perspective of power circuit packaging, the current power chip is assembled on the ceramic substrate through solder welding, but as the power of the chip is increased, the assembly mode is difficult to meet the higher and higher heat dissipation requirement. For the wire bonding interconnection mode, under the high-temperature and high-power condition, gold-aluminum compounds with a certain degree can be formed between gold wires and aluminum electrodes (PADs) on the surfaces of chips and between coarse aluminum wires and gold bonding interfaces, and reliability problems can be caused under the long-term high-temperature and high-power effects. Meanwhile, due to the large distance between the circuit substrate and the outer lead and the long bonding wire, the bonding wire is easy to fall sideways in the impact or vibration process, so that the adjacent bonding wires are short-circuited or short-circuited with accessory conductors. In the prior art, heat dissipation is performed by providing a heat dissipation channel inside the circuit, but this structure is not applicable to the case where external high temperature and high power exist at the same time. The circuit is provided with a high-temperature environment outside, the temperature inside the circuit is higher and higher after the circuit works for a long time, and the heat dissipation channel cannot perform effective heat exchange to reduce the temperature of the integrated circuit. Therefore, there is a need for a high power hybrid integrated device and a packaging method thereof that can satisfy a high temperature use environment. Disclosure of Invention Aiming at the technical problems, the invention provides a high-temperature high-power hybrid integrated device and a packaging method thereof. The high-temperature high-power hybrid integrated device is characterized by comprising a circuit module and a heat storage unit box body provided with an inner cavity, wherein a groove and a filling port for filling phase-change heat storage materials are arranged on the top side surface of the heat storage unit box body; the side wall of the groove is provided with a flow guide opening communicated with the inner cavity, a gap is arranged between the side wall of the groove and the circuit module, a second filling body made of phase-change heat storage materials is arranged at the gap, the second filling body is contacted with the side wall of the groove and the side wall of the circuit module and covers the exposed surface of the circuit module, the second filling body is conta