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CN-116381021-B - Fiber-based organic photoelectrochemical transistor uric acid sensor and preparation method thereof

CN116381021BCN 116381021 BCN116381021 BCN 116381021BCN-116381021-B

Abstract

The invention provides a fiber-based organic photoelectrochemical transistor uric acid sensor and a preparation method thereof, which are characterized in that Fe-MOF@PANI is grown on the surface of conductive fibers, and then urate oxidase and a biocompatible film solution are modified as the grid electrode of the transistor, and taking the fiber loaded with the semiconductor material as a source electrode and a drain electrode of the transistor, dripping gel electrolyte, and assembling to obtain the fiber-based organic photoelectrochemical transistor uric acid sensor. The organic photoelectrochemical crystal uric acid sensor takes a fiber substrate as an electrode, modifies a photosensitive material and a sensing substance at a grid electrode, enables electrons to jump to the surface of the electrode under the illumination condition, realizes the regulation and control of channel current, and realizes the detection of uric acid in cooperation with the sensing substance.

Inventors

  • WANG YUEDAN
  • WANG DONG
  • TAO YANG
  • HAO PANPAN
  • JIANG WEI
  • LI MENGJIE

Assignees

  • 武汉纺织大学

Dates

Publication Date
20260508
Application Date
20230426

Claims (7)

  1. 1. The preparation method of the fiber-based organic photoelectrochemical transistor uric acid sensor is characterized by comprising the following steps of: S1, carrying out surface treatment on conductive fibers, and placing the conductive fibers into a reaction kettle filled with a mixed solution, wherein the mixed solution comprises a complexing agent, an ferric salt solution, an organic solvent, a doping agent and an aniline monomer, and controlling the reaction temperature and time to prepare the Fe-MOF@PANI composite conductive fibers; S2, carrying out surface treatment on the Fe-MOF@PANI composite conductive fiber obtained in the step S1, soaking the conductive fiber in a urate oxidase solution at 2-4 ℃ for 22-26 hours, taking out the conductive fiber, and naturally drying the conductive fiber in air, soaking the conductive fiber in a biocompatible film solution for 3-5 hours, taking out the conductive fiber, and naturally drying the conductive fiber to serve as a grid electrode of an organic photoelectrochemical transistor uric acid sensor, wherein the temperature of the natural air drying is 2-4 ℃ for two times; S3, taking the fiber attached with the semiconductor material as a source electrode and a drain electrode of the organic photoelectrochemical transistor uric acid sensor, placing the fiber in parallel with the grid electrode in the step S2 at a certain distance, and dripping gel electrolyte to obtain the fiber-based organic photoelectrochemical transistor uric acid sensor; In the step S1, the ratio of the mass concentration of the complexing agent to the mass concentration of the aniline monomer is (0.5-2) 1, and the ratio of the mass concentration of the complexing agent to the mass concentration of the ferric salt solution is (1.6-2.4) 1; In the step S1, the complexing agent is 2-amino terephthalic acid, and the ferric salt solution comprises one of ferric trichloride hexahydrate, ferric trichloride, ferric nitrate nonahydrate and ferric sulfide; In step S1, the dopant comprises one of acetic acid, hypochlorous acid, hydrofluoric acid and carbonic acid, and the organic solvent comprises any one of N, N-dimethylformamide, dimethylacetamide, dimethylpropionamide, diethylformamide or diethylacetamide.
  2. 2. The method for manufacturing a fiber-based organic photoelectrochemical transistor uric acid sensor according to claim 1, characterized in that in step S1, the reaction temperature is 120 to 200 ℃ and the time is 8 to 24 hours.
  3. 3. The method for manufacturing a fiber-based organic photoelectrochemical transistor uric acid sensor according to claim 1, wherein in the step S2, the concentration of the urate oxidase is 5-15 mg/ml, and the concentration of the biocompatible film solution is 5% -25%.
  4. 4. The method for manufacturing a fiber-based organic photoelectrochemical transistor uric acid sensor according to claim 1, wherein in step S1, the conductive fiber comprises one of carbon fiber, metal fiber or chemical fiber woven with conductive medium, in step S2, the biocompatible film solution is perfluorosulfonic acid type polymer solution, and in step S3, the fiber attached with semiconductor material comprises one of fiber loaded with PEDOT: PSS, polyaniline formed by in situ polymerization, polypyrrole, polythiophene composite conductive fiber.
  5. 5. The preparation method of the fiber-based organic photoelectrochemical transistor uric acid sensor according to claim 1 is characterized in that in the step S1, the fiber to be treated is sequentially placed in deionized water, absolute ethyl alcohol and acetone solution, ultrasonic cleaning is carried out for 10-20 min, then the fiber is taken out, the fiber is dried to obtain the fiber with a clean surface, and in the step S2, the surface treatment is that the Fe-MOF@PANI composite conductive fiber is sequentially cleaned by adopting absolute ethyl alcohol and the same kind of organic solvent as the mixed solution so as to remove unreacted impurities.
  6. 6. A fiber-based organic photoelectrochemical transistor uric acid sensor is characterized by being prepared by a preparation method of the fiber-based organic photoelectrochemical transistor uric acid sensor according to any one of claims 1-5, wherein the fiber-based organic photoelectrochemical transistor uric acid sensor takes fibers as a base material, and realizes detection of uric acid by regulating and controlling grid voltage and chemical reaction of Fe-MOF@PANI materials and urate oxidase on the grid to cause change of channel current.
  7. 7. The fiber-based organic photoelectrochemical transistor uric acid sensor of claim 6, wherein the concentration of uric acid detected by the fiber-based organic photoelectrochemical transistor uric acid sensor ranges from 1nM to 10mm, the detection limit is 1nM, and the response time is 50s.

Description

Fiber-based organic photoelectrochemical transistor uric acid sensor and preparation method thereof Technical Field The invention relates to the technical field of photoelectric transistor sensors, in particular to a fiber-based organic photoelectric chemical transistor uric acid sensor and a preparation method thereof. Background Gout is a common disease caused by excessive uric acid content in human bodies, and besides, the excessive uric acid content can cause diseases in kidney and cardiovascular, so that the detection of the uric acid content in the human bodies is necessary. Currently, uric acid sensors are available in many varieties, but have different disadvantages, such as high price, portability, etc. How to rapidly and accurately detect the uric acid content in the human body has important significance for monitoring the health of the human body. In the prior art, the invention patent (application number is CN 201811162927. X) discloses a lanthanide MOF spinning fiber membrane as a sensor for detecting uric acid and preparation, which is applied to quantitative detection of uric acid in urine of a person, and the preparation process comprises the steps of synthesis of Eu-PTA-MOF powder, synthesis of copolymer PMMA/PVP, preparation of electrostatic spinning solution, preparation of a nanofiber membrane, cutting of the nanofiber membrane, inserting the cut membrane into a cuvette and recording fluorescence spectrum data, wherein the prepared electrostatic spinning fiber membrane shows various characteristic blue fluorescence by Eu 3+, and uric acid has quenching effect on fluorescence of the electrostatic spinning fiber membrane, so that the electrostatic spinning fiber membrane has the function of detecting uric acid. However, the electrostatic spinning fiber membrane only has good fluorescence detection stability when the pH value is 4.5-8.0, and the application of the uric acid detection sensor is limited because the pH value of gout patients is often reduced due to the secretion of more uric acid, in addition, the fiber membrane detects uric acid by virtue of the fluorescence effect of Eu 3+, the required detection time is long, the detection efficiency is low, only qualitative detection can be performed, and the uric acid content detection cannot be performed for gout diseases. Organic photoelectrochemical transistor (OPECT) is an emerging photoelectrochemical technology that combines an organic photoelectrochemical transistor (OECT) with Photoelectrochemistry (PEC). The technology inherits the advantages of OECT and PEC sensors, and has the advantages of larger amplified signals, easy miniaturization and the like. The photoelectric transistor sensor has good application prospect in the fields of biosensing, logic circuits, immunosensor and the like, and has important significance for solving the problems and providing a reliable detection means for gout patients if the photoelectric transistor sensor can be combined with a PEC method to detect uric acid by utilizing the advantages of good biocompatibility, low detection limit, high signal amplification and the like of OECT. In view of the foregoing, there is a need for an improved fiber-based organic photoelectrochemical transistor uric acid sensor and a method for manufacturing the same, which solve the above-mentioned problems. Disclosure of Invention The invention aims to provide a fiber-based organic photoelectrochemical transistor uric acid sensor and a preparation method thereof, wherein Fe-MOF@PANI grows on the surface of a conductive fiber, a sensing substance is modified to serve as a grid electrode of the transistor, and meanwhile, the structure of the Fe-MOF@PANI is regulated and controlled through parameter control so as to improve transmission performance, so that the fiber-based organic photoelectrochemical transistor uric acid sensor has high photoelectric response, realizes conversion from light energy to electric energy, and realizes detection of uric acid in cooperation with the sensing substance. The uric acid sensor can work under zero grid bias while improving the sensitivity to uric acid detection, reduces interference, shows good current response to uric acid with different concentrations, and has great market popularization value. In order to achieve the above object, the present invention provides a method for manufacturing a fiber-based organic photoelectrochemical transistor uric acid sensor, comprising the steps of: S1, carrying out surface treatment on conductive fibers, and placing the conductive fibers into a reaction kettle filled with a mixed solution, wherein the mixed solution comprises a complexing agent, an ferric salt solution, an organic solvent, a doping agent and an aniline monomer, and controlling the reaction temperature and time to prepare the Fe-MOF@PANI composite conductive fibers; S2, carrying out surface treatment on the Fe-MOF@PANI composite conductive fiber obtained in the step S1, soaking th