Search

CN-116387313-B - Silicon carbide Schottky diode chip, circuit board assembly and electronic equipment

CN116387313BCN 116387313 BCN116387313 BCN 116387313BCN-116387313-B

Abstract

The application provides a silicon carbide Schottky diode chip, a circuit board assembly and electronic equipment, wherein the silicon carbide Schottky diode chip comprises a plurality of Schottky diode units; for each of the Schottky diode units, the Schottky diode unit comprises a cathode metal layer, an N-type substrate layer, an N-type epitaxial layer, an anode metal layer and a terminal structure. By forming a plurality of Schottky diode units with equivalent overcurrent capability, the Schottky diode units with failure points do not influence other Schottky diode units, and the possibility that the silicon carbide Schottky diode chips completely fail due to the failure points is reduced.

Inventors

  • ZHANG AIZHONG

Assignees

  • 深圳市至信微电子有限公司

Dates

Publication Date
20260505
Application Date
20230428

Claims (10)

  1. 1. A silicon carbide schottky diode chip, wherein the silicon carbide schottky diode chip comprises a plurality of schottky diode cells; For each Schottky diode unit, the Schottky diode unit comprises a cathode metal layer, an N-type substrate layer, an N-type epitaxial layer, an anode metal layer and a terminal structure, wherein the N-type epitaxial layer comprises an isolation part, and the terminal structure is arranged on the surface of the isolation part.
  2. 2. The silicon carbide schottky diode chip of claim 1 wherein for each of said schottky diode cells, said schottky diode cell comprises a base cell, a plurality of said schottky diode cells comprising a plurality of center schottky diode cells, each of said center schottky diode cells being in contact with each other to form a center matrix; The side Schottky diode units are contacted with each other to form a plurality of side matrixes; A plurality of corner schottky diode cells, each of the corner schottky diode cells being in contact with two of all of the side matrices to form a first enclosure, the first enclosure contact surrounding the center matrix.
  3. 3. The silicon carbide schottky diode chip of claim 1 wherein for each of the schottky diode cells, the termination structure forms a plurality of floating field rings on an N-type epitaxial layer.
  4. 4. The silicon carbide schottky diode chip of claim 1 wherein for each of the schottky diode cells, the termination structure forms a plurality of field plate structures on an N-type epitaxial layer.
  5. 5. The silicon carbide schottky diode chip of claim 2 wherein the distances between the base cells of all of the center schottky diode cells are equal.
  6. 6. The silicon carbide schottky diode chip of claim 5, wherein the base cells of all the center schottky diode cells are spaced apart by a first distance, and the base cells of all the side schottky diode cells are spaced apart by the first distance; the base unit of each of the side schottky diode units is spaced from an edge of the silicon carbide schottky diode chip by a second distance, the second distance being greater than the first distance.
  7. 7. The silicon carbide schottky diode chip of claim 6, wherein for each of the corner schottky diode cells, the base cell of the corner schottky diode cell is spaced from the base cell of a side contact schottky diode cell by the first distance and from an edge of the silicon carbide schottky diode chip by the second distance, wherein the side contact schottky diode cell is the side schottky diode cell in contact with the corner schottky diode cell in the side matrix in contact with the corner schottky diode cell.
  8. 8. The silicon carbide schottky diode chip of claim 7, wherein for each of the center schottky diode cells in contact with the side matrix, the shortest separation distance of the base cell of the center schottky diode cell from the base cells of all of the side schottky diode cells is the first distance.
  9. 9. A circuit board assembly comprising the silicon carbide schottky diode chip of any of claims 1-8.
  10. 10. An electronic device, characterized in that, the electronic device comprising the circuit board assembly of claim 9.

Description

Silicon carbide Schottky diode chip, circuit board assembly and electronic equipment Technical Field The application relates to the technical field of semiconductors, in particular to a silicon carbide Schottky diode chip, a circuit board assembly and electronic equipment. Background Currently, silicon carbide electronic devices are widely used due to their excellent electrical properties, and as electrical equipment is rapidly developed, the silicon carbide electronic device industry is also moving along with development trend, wherein the silicon carbide schottky diode chip is the most widely used. For silicon carbide schottky diode chips with high current properties, the chip area is large relative to other common silicon carbide schottky diode chips. However, all silicon carbide schottky diode chips are produced integrally, and when a failure point exists in the silicon carbide schottky diode chip with a large chip area, the whole silicon carbide schottky diode chip can be failed and cannot be used. Disclosure of Invention The embodiment of the application mainly aims to provide a silicon carbide Schottky diode chip, a circuit board assembly and electronic equipment, and aims to enable the silicon carbide Schottky diode chip to still work in a matched current environment under the condition that a failure point exists. To achieve the above object, a first aspect of an embodiment of the present application proposes a silicon carbide schottky diode chip including a plurality of schottky diode cells; For each of the Schottky diode units, the Schottky diode unit comprises a cathode metal layer, an N-type substrate layer, an N-type epitaxial layer, an anode metal layer and a terminal structure. In some possible embodiments of the present application, for each of the schottky diode cells, the schottky diode cell includes a base cell, and the plurality of schottky diode cells includes: the plurality of central Schottky diode units are contacted with each other to form a central matrix; The side Schottky diode units are contacted with each other to form a plurality of side matrixes; A plurality of corner schottky diode cells, each of the corner schottky diode cells being in contact with two of all of the side matrices to form a first enclosure, the first enclosure contact surrounding the center matrix. In some possible embodiments of the present application, the termination structure forms a plurality of floating field loops on the N-type epitaxial layer for each of the schottky diode cells. In some possible embodiments of the present application, for each of the schottky diode cells, the termination structure forms a plurality of field plate structures on an N-type epitaxial layer. In some possible embodiments of the present application, the distances between the base cells of all the center schottky diode cells are equal. In some possible embodiments of the present application, the base cells of all the center schottky diode cells are spaced apart by a first distance, and the base cells of all the side schottky diode cells are spaced apart by the first distance; the base unit of each of the side schottky diode units is spaced from an edge of the silicon carbide schottky diode chip by a second distance, the second distance being greater than the first distance. In some possible embodiments of the application, for each of the corner schottky diode cells, the base cell of the corner schottky diode cell is spaced from the base cell of a side contact schottky diode cell by the first distance and from an edge of the silicon carbide schottky diode chip by the second distance, wherein the side contact schottky diode cell is the side schottky diode cell in contact with the corner schottky diode cell in the side matrix in contact with the corner schottky diode cell. In some possible embodiments of the present application, for each of the center schottky diode cells in contact with the side matrix, the shortest separation distance of the base cell of the center schottky diode cell from the base cells of all of the side schottky diode cells is the first distance. To achieve the above object, a second aspect of the embodiments of the present application provides a circuit board assembly, which includes the silicon carbide schottky diode chip according to the first aspect. To achieve the above object, a third aspect of the embodiments of the present application proposes an electronic device including the circuit board assembly according to the second aspect. The silicon carbide Schottky diode chip comprises a plurality of Schottky diode units, wherein each Schottky diode unit comprises a cathode metal layer, an N-type substrate layer, an N-type epitaxial layer, an anode metal layer and a terminal structure. Through forming a plurality of schottky diode units for every schottky diode unit forms equivalent overcurrent ability, has the failure point in schottky diode unit, and other schottky diode units still normally shunt,