CN-116390617-B - Two-dimensional/three-dimensional perovskite film and preparation method and application thereof

Abstract

The invention is suitable for perovskite films, and provides a preparation method of a two-dimensional/three-dimensional perovskite film, which comprises the following steps of spin-coating SnO 2 solution on a substrate, annealing treatment, dissolving lead iodide, lead bromide, formamidine iodine and methylamine bromine in a mixed solution of DMSO and DMF, dissolving cesium iodide in the DMSO solution, adding the mixed solution, spin-coating on the substrate, dropwise adding chlorobenzene, spin-coating ferroferric oxide magnetic nanoparticles and p-phenylenediamine iodiisopropanol solution on the film under the action of a magnetic field, annealing treatment, dissolving Spiro-OMeTAD in the chlorobenzene solution, dissolving Li-TFSI in acetonitrile, adding TBP in the Spiro-OMeTAD solution, spin-coating on the surface of the film, and evaporating a metallic silver electrode. The invention provides a two-dimensional/three-dimensional perovskite film prepared by a preparation method of the two-dimensional/three-dimensional perovskite film. The invention also provides application of the two-dimensional/three-dimensional perovskite film in preparing perovskite solar cells. The invention effectively improves the quality and stability of the perovskite thin film.

Inventors

• BAI XUE
• LIU YUE
• ZHANG YU
• GAO YANBO
• LU MIN
• WU ZHENNAN

Assignees

• 吉林大学

Dates

Publication Date

20260505

Application Date

20230223

Claims (7)

1. 1. The preparation method of the two-dimensional/three-dimensional perovskite film is characterized by comprising the following steps of: Step 1, cleaning and drying an ITO substrate, and then treating the ITO substrate by using ultraviolet ozone; step 2, spin-coating SnO 2 solution on the substrate treated by ozone in the step 1, and placing the substrate on a hot table for annealing treatment; step 3, dissolving lead iodide, lead bromide, formamidine iodine and methylamine bromine into a mixed solution of DMSO and DMF, dissolving cesium iodide into the DMSO solution, and adding the solution into the solution to serve as a perovskite precursor solution; Step 4, spin-coating the perovskite precursor solution on the substrate subjected to the annealing treatment in the step 2, and dropwise adding chlorobenzene as an antisolvent on the surface of the formed film; Step 5, dissolving ferroferric oxide magnetic nano particles and p-phenylenediamine iodine into isopropanol solution, spin-coating the ferroferric oxide magnetic nano particles and the p-phenylenediamine iodine isopropanol solution onto the film in the step 4 under the action of a magnetic field, and then placing the film on a hot table for annealing treatment; step 6, dissolving the Spiro-OMeTAD into a chlorobenzene solution, dissolving the Li-TFSI into acetonitrile, and then adding the Li-TFSI solution and TBP into the Spiro-OMeTAD solution; step 7, spin-coating the solution finally obtained in the step6 on the surface of the film subjected to annealing treatment in the step 5; and 8, placing the film obtained in the step 7 into an evaporation instrument to evaporate the metal silver electrode.
2. 2. The method for preparing a two-dimensional/three-dimensional perovskite thin film according to claim 1, wherein in step 1, the washing comprises ultrasonic washing using deionized water, ethanol, acetone and ethanol in this order.
3. 3. The method for producing a two-dimensional/three-dimensional perovskite thin film according to claim 1, wherein in step 1, the ultraviolet ozone treatment is performed for 15 to 20 minutes.
4. 4. The method for producing a two-dimensional/three-dimensional perovskite thin film according to claim 1, wherein in step 2, the annealing treatment is performed at 140 to 160 ℃ for 20 to 30 minutes.
5. 5. The method for producing a two-dimensional/three-dimensional perovskite thin film according to claim 1, wherein in step 5, the annealing treatment is performed at 100 to 110 ℃ for 50 to 60 minutes.
6. 6. A two-dimensional/three-dimensional perovskite thin film produced by the production method of a two-dimensional/three-dimensional perovskite thin film according to any one of claims 1 to 5.
7. 7. Use of the two-dimensional/three-dimensional perovskite thin film according to claim 6 for the preparation of perovskite solar cells.

Description

Two-dimensional/three-dimensional perovskite film and preparation method and application thereof Technical Field The invention belongs to perovskite films, and particularly relates to a two-dimensional/three-dimensional perovskite film, and a preparation method and application thereof. Background Organic-inorganic hybrid perovskites have received attention in the photovoltaic field due to their excellent properties of high light absorption coefficient, high mobility, long carrier lifetime, and adjustable band gap. However, perovskite solar cells also face stability problems due to the instability of the perovskite absorber layer, and two-dimensional perovskite has better structural stability than three-dimensional perovskite, and perovskite solar cells based on two-dimensional/three-dimensional heterostructures show great potential, hopefully improving device performance and environmental stability at the same time. At present, a two-dimensional/three-dimensional heterostructure perovskite thin film is generally prepared by a preparation method that two-dimensional perovskite is introduced into a three-dimensional perovskite thin film, the two-dimensional perovskite is embedded into a three-dimensional perovskite crystal boundary position, effective crystal boundary passivation can be achieved, however, large organic cations can break an original three-dimensional perovskite microstructure in a crystallization process, disordered phase distribution in the thin film can be caused, and carrier transfer is hindered, and a two-dimensional perovskite covering layer is formed on the surface of the three-dimensional perovskite thin film, so that the effect on the three-dimensional perovskite crystallization process is small, and the two-dimensional perovskite covering layer formed on the surface of the three-dimensional perovskite thin film lacks passivation effect on deep crystal boundary. Therefore, it is necessary to construct a more suitable two-dimensional/three-dimensional heterostructure to achieve simultaneous passivation of grain boundaries and surface defects and not to interfere with the crystal growth process, however, such two-dimensional/three-dimensional heterostructure in which two-dimensional perovskite is uniformly embedded into the surface and grain boundaries of a three-dimensional perovskite film is difficult to construct by a conventional spin coating method, and thus, finding a suitable thin film preparation process has yet to be further studied. Disclosure of Invention The embodiment of the invention aims to provide a preparation method of a two-dimensional/three-dimensional perovskite film, which aims to solve the problems in the background technology. The embodiment of the invention is realized in such a way that the preparation method of the two-dimensional/three-dimensional perovskite thin film comprises the following steps: Step 1, cleaning and drying an ITO substrate, and then treating the ITO substrate by using ultraviolet ozone; step 2, spin-coating SnO 2 solution on the substrate treated by ozone in the step 1, and placing the substrate on a hot table for annealing treatment; step 3, dissolving lead iodide, lead bromide, formamidine iodine and methylamine bromine into a mixed solution of DMSO and DMF, dissolving cesium iodide into the DMSO solution, and adding the solution into the solution to serve as a perovskite precursor solution; Step 4, spin-coating the perovskite precursor solution on the substrate subjected to the annealing treatment in the step 2, and dropwise adding chlorobenzene as an antisolvent on the surface of the formed film; Step 5, dissolving ferroferric oxide magnetic nano particles and p-phenylenediamine iodine into isopropanol solution, spin-coating the ferroferric oxide magnetic nano particles and the p-phenylenediamine iodine isopropanol solution onto the film in the step 4 under the action of a magnetic field, and then placing the film on a hot table for annealing treatment; step 6, dissolving the Spiro-OMeTAD into a chlorobenzene solution, dissolving the Li-TFSI into acetonitrile, and then adding the Li-TFSI solution and TBP into the Spiro-OMeTAD solution; step 7, spin-coating the solution finally obtained in the step6 on the surface of the film subjected to annealing treatment in the step 5; and 8, placing the film obtained in the step 7 into an evaporation instrument to evaporate the metal silver electrode. Preferably, in step 1, the washing includes ultrasonic washing with deionized water, ethanol, acetone, and ethanol in this order. Preferably, in step 1, the ultraviolet ozone treatment is performed for 15-20min. Preferably, in the step 2, the annealing treatment is performed at 140-160 ℃ for 20-30min. Preferably, in step5, the annealing treatment is performed at 100-110 ℃ for 50-60min. Another object of the embodiment of the invention is to provide a two-dimensional/three-dimensional perovskite film prepared by the preparation method of the two-dimensi