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CN-116466216-B - Power chip electrical performance testing device and batch testing device

CN116466216BCN 116466216 BCN116466216 BCN 116466216BCN-116466216-B

Abstract

The invention discloses an electric performance testing device for a power chip, which comprises a device base, a transmission cavity and a key, wherein the device base comprises a base shell, a collector metal structure and a collector terminal, a press-fit electrode comprises a press-fit electrode shell, an emitter terminal is arranged above the press-fit electrode shell, an emitter metal structure is arranged at the bottom of the press-fit electrode shell, a grid terminal and a grid thimble are arranged on the side face of the press-fit electrode shell, the press-fit electrode shell is assembled in the transmission cavity through a pressing spring, a transmission gear is arranged in the transmission cavity, one side of the transmission gear is meshed with the key, the other side of the transmission gear is meshed with the press-fit electrode shell, the bottom of the transmission cavity is connected with the device base through a rotating component, the key is pressed, the transmission cavity moves downwards while the press-fit electrode is lifted, and the transmission cavity is supported by the rotating component, presses and translates the key to rotate the press-fit electrode to a testing station or a waiting station. The invention can ensure the crimping connection of the power chip electrodes, ensure the consistency of the pressure of the connection interface and improve the testing efficiency.

Inventors

  • MO SHENYANG
  • TONG YAN
  • LUO JIAN
  • CHEN SHU
  • CHEN JING

Assignees

  • 南瑞联研半导体有限责任公司
  • 国网江苏省电力有限公司电力科学研究院

Dates

Publication Date
20260508
Application Date
20230331

Claims (10)

  1. 1. A power chip electrical performance testing apparatus, comprising: The device base (2) comprises a base shell (2-1), wherein a limit groove for fixing a chip (6) is formed in the base shell (2-1), a collector metal structure (2-2) is arranged at the bottom of the limit groove, a collector terminal (2-3) is arranged at the bottom of the base shell (2-1), the top of the collector terminal (2-3) penetrates through the base shell (2-1) to be connected with the collector metal structure (2-2), and the collector metal structure (2-2) is used for directly contacting with a collector of the chip (6) to lead out signals; The press-fit electrode (1) comprises a press-fit electrode shell (1-1), an emitter terminal (1-2) is arranged above the press-fit electrode shell (1-1), an emitter metal structure (1-3) is arranged at the bottom of the press-fit electrode shell (1-1), the emitter terminal (1-2) penetrates through the press-fit electrode shell (1-1) to be connected with the emitter metal structure (1-3), the emitter metal structure (1-3) is used for being in direct contact with an emitter of a chip (6) to lead out signals, a grid terminal (1-5) and a grid thimble (1-6) are arranged on the side face of the press-fit electrode shell (1-1), the grid thimble (1-6) penetrates through the grid terminal (1-5), and the grid thimble (1-6) is used for being in direct contact with a grid of the chip (6) to lead in grid signals; The device comprises a transmission cavity (3) and keys (4), wherein the press-fit electrode shell (1-1) is assembled in the transmission cavity (3) through a pressing spring (9), a transmission gear (7) is arranged in the transmission cavity (3), one side of the transmission gear (7) is meshed with the keys (4), the other side of the transmission gear is meshed with the press-fit electrode shell (1-1), the bottom of the transmission cavity (3) is connected with the device base (2) through a rotating assembly, the keys (4) are pressed, the transmission cavity (3) moves downwards when the press-fit electrode (1) is lifted, the transmission cavity (3) is supported by the rotating assembly, is suspended relative to the device base (2), and the press-fit electrode (1) is rotated to a testing station or a waiting station through pressing and translating the keys (4).
  2. 2. The power chip electrical performance testing device according to claim 1, wherein a through hole is formed in the middle of the device base (2), a base bottom cover (2-4) is arranged at the bottom of the through hole, the rotating assembly comprises a supporting spring (5), the supporting spring (5) is arranged in the through hole, one end of the supporting spring is connected with the bottom of the transmission cavity (3), and the other end of the supporting spring is connected with the base bottom cover (2-4).
  3. 3. The power chip electrical performance testing apparatus according to claim 2, wherein the rotation assembly further comprises a blocking structure for limiting the rotation angle of the press-fit electrode (1) to a range of 0 ° -90 °.
  4. 4. The power chip electrical performance testing apparatus according to claim 2, wherein the supporting spring (5) is a shaped spring for limiting the rotation angle of the press-fit electrode (1) to a range of 0 ° -90 °.
  5. 5. The power chip electrical performance testing device according to claim 1, wherein a track beam (1-1-1) and a spring positioning beam (1-1-2) are arranged at the tail end of the press-fit electrode shell (1-1), a limit track (3-2) is arranged on the inner wall of the transmission cavity, the track beam (1-1) is assembled on the limit track (3-2) and used for ensuring that the press-fit electrode (1) does not generate inclination deviation in the lifting and releasing processes, and the spring positioning beam (1-1-2) is used for being matched with a pressing spring (9) to ensure the press-fit pressure of the press-fit electrode (1).
  6. 6. The power chip electrical performance testing device according to claim 1, wherein the end of the press-fit electrode shell (1-1) is further provided with a press-fit electrode transmission mechanism (1-1-3), and the press-fit electrode transmission mechanism (1-1-3) is used for being meshed with the transmission gear (7).
  7. 7. The power chip electrical performance testing device according to claim 1, wherein the gate ejector pin (1-6) is provided with a gate spring (1-4), and the amount of expansion of the gate spring (1-4) is controllable to ensure reliable contact between the gate ejector pin (1-6) and the gate of the chip (6).
  8. 8. The power chip electrical performance testing device according to claim 1, wherein a transmission cavity wall hole (3-1) is formed in the middle of the transmission cavity (3), and the transmission gear (7) is fixed in the transmission cavity wall hole (3-1) through a gear shaft (8).
  9. 9. The power chip electrical performance testing apparatus according to claim 1, wherein the key (4) is engaged with the transmission gear (7) through a key transmission mechanism (4-1).
  10. 10. A power chip electrical performance batch test apparatus comprising a plurality of power chip electrical performance test apparatuses according to any one of claims 1-9.

Description

Power chip electrical performance testing device and batch testing device Technical Field The invention relates to a power chip electrical performance testing device and a batch testing device, and belongs to the technical field of power semiconductor devices. Background In the prior art, a chip is packaged into a subunit, a sub-module or a module, and chip electrode signals are led out through an interconnection structure in the package, so that the chip to be tested is connected into electrical characteristic testing equipment, such as dynamic and static characteristic testing and the like. The method not only adds extra packaging cost to the chip test, but also introduces extra parasitic resistance and parasitic inductance to the tested product by the extra packaging, so that the test result can not truly reflect the characteristics of the bare chip. In addition, the chip size varies due to different voltages and power levels. Although the difference is only in millimeter level, the packaging process and materials are required to be redeveloped, so that the development difficulty of the test is greatly increased. At present, a mature probe station is used for chip testing, but the domestic automation precision and the testing precision are not enough, and no domestic probe station for chip-level testing exists at present. The imported device is adopted to increase the cost, and foreign devices are difficult to customize and develop according to domestic test requirements. Whether it is for new test requirements or for new chip products, the imported probe station has a significant hysteresis in adjusting the test scheme, and cannot control the cost and difficulty. In addition, in the prior art, through the principle similar to a clamp and a clamp, a limit structure of a chip is combined, and a test scheme of the chip is also available. However, on the one hand, the scheme is very complicated to the clamping process of a single chip, and the testing efficiency is extremely low, or the uniformity of the contact conditions of the chip test cannot be met or the convenience of batch chip test cannot be considered. Disclosure of Invention The invention aims to overcome the defects in the prior art, and provides a power chip electrical performance testing device and a batch testing device, which can ensure the crimping connection of power chip electrodes under the condition of no package, ensure the consistency of the pressure of a connection interface and improve the testing efficiency. In order to achieve the above purpose, the invention is realized by adopting the following technical scheme: in a first aspect, the present invention provides a power chip electrical performance testing apparatus, comprising: The device base comprises a base shell, wherein a limit groove for fixing a chip is formed in the base shell, a collector metal structure is arranged at the bottom of the limit groove, a collector terminal is arranged at the bottom of the base shell, the top of the collector terminal penetrates through the base shell and is connected with the collector metal structure, and the collector metal structure is used for directly contacting with a collector of the chip to lead out signals; The press-fit electrode comprises a press-fit electrode shell, wherein an emitter electrode terminal is arranged above the press-fit electrode shell, an emitter electrode metal structure is arranged at the bottom of the press-fit electrode shell, the emitter electrode terminal penetrates through the press-fit electrode shell to be connected with the emitter electrode metal structure, and the emitter electrode metal structure is used for being in direct contact with an emitter electrode of a chip to lead out signals; the device comprises a transmission cavity and a key, wherein the press-fit electrode shell is assembled in the transmission cavity through a pressing spring, a transmission gear is arranged in the transmission cavity, one side of the transmission gear is meshed with the key, the other side of the transmission gear is meshed with the press-fit electrode shell, the bottom of the transmission cavity is connected with a device base through a rotating assembly, the key is pressed, the transmission cavity moves downwards while the press-fit electrode is lifted, the transmission cavity is supported by the rotating assembly and is suspended relative to the device base, and the press-fit electrode is rotated to a testing station or a waiting station by pressing and translating the key. In combination with the first aspect, optionally, a through hole is formed in the middle of the device base, a base bottom cover is arranged at the bottom of the through hole, the rotating assembly comprises a supporting spring, the supporting spring is arranged in the through hole, one end of the supporting spring is connected with the bottom of the transmission cavity, and the other end of the supporting spring is connected with the base bo