CN-116560068-B - Terahertz wave modulation device and system

CN116560068BCN 116560068 BCN116560068 BCN 116560068BCN-116560068-B

Abstract

The application relates to a terahertz wave modulation device and system, comprising a plurality of resonance units, wherein the resonance units are distributed in a two-dimensional array mode, each resonance unit comprises a modulation unit and a dielectric layer, the modulation unit is fixed on the first surface of the dielectric layer, and the modulation unit is used for generating deformation under the condition of being loaded with preset voltage so as to perform phase modulation on incident terahertz waves. The device can set the input voltage of each resonance unit, thereby realizing the phase modulation of the terahertz waves reflected by each resonance unit. In addition, as the resonant units are arranged in a two-dimensional array, different preset voltages are loaded on the resonant units, the different phases of terahertz waves reflected by the resonant units on the two-dimensional array can be realized, compared with the prior art, the phase of the terahertz wave reflected by each resonance unit can be flexibly modulated according to the magnitude of the preset voltage loaded by each loaded resonance unit, namely, the flexibility of terahertz wave modulation is improved.

Inventors

YOU ZHENG
ZHAO XIAOGUANG
XIE RONGBO
YOU RUI
RUAN YONG
ZHANG LINGYUN
WU YU
LIU XIAOQIN

Assignees

清华大学

Dates

Publication Date: 20260512
Application Date: 20230418

Claims (10)

1. The terahertz wave modulation system is characterized by comprising a terahertz wave modulation device and a regulating circuit, wherein the regulating circuit is connected with the modulation device; the modulating device comprises a plurality of resonant units, wherein the resonant units are arranged in a two-dimensional array, each resonant unit comprises a modulating unit, a dielectric layer, a back electrode and a connecting component, the modulating unit is fixed on a first surface of the dielectric layer, and the back electrode is fixed on a second surface of the dielectric layer and is connected with the regulating circuit; The modulating unit is used for generating deformation under the condition of being loaded with preset voltage so as to carry out phase modulation on the incident terahertz wave; the connecting component is used for connecting the modulating unit and the back electrode, enabling the modulating unit to be fixed on the first surface of the dielectric layer, and enabling the back electrode to be fixed on the second surface of the dielectric layer; The regulating circuit is used for determining preset voltages to be loaded on the resonant units according to arrangement positions of the resonant units in the modulating device, and correspondingly loading the preset voltages on the resonant units so as to control the modulating units in the modulating device to carry out phase modulation on the input terahertz waves based on the preset voltages.
2. The modulation system of claim 1, wherein the resonating unit further comprises a first insulating layer disposed between the first surface of the dielectric layer and the back electrode.
3. The modulation system of claim 2, wherein the first insulating layer is made of a silicon nitride material.
4. The modulation system of claim 1, wherein the resonating unit further comprises a second insulating layer disposed between the second surface of the dielectric layer and the modulating unit.
5. The modulation system of claim 4, wherein the second insulating layer is made of a silicon nitride material.
6. The modulation system of claim 1, wherein the resonating unit further comprises a surface metal structure disposed between the modulating unit and the dielectric layer.
7. The modulation system of claim 1, wherein the modulation unit is a cantilever structure.
8. The modulation system of claim 7, wherein the cantilever structure comprises at least one of a straight cantilever structure, a parallel bar cantilever structure, and an X-cantilever structure.
9. The modulation system of claim 1, wherein the modulation unit is a cross-shaped cantilever structure.
10. The modulation system of claim 1, wherein the material of the dielectric layer is silicon crystal.

Description

Terahertz wave modulation device and system Technical Field The application relates to the technical field of electromagnetic functional devices, in particular to a terahertz wave modulation device and system. Background Terahertz waves (THz waves for short) are electromagnetic waves with the frequency in the range of 0.1THz-10THz, and the wave band is positioned between millimeter waves and infrared light, so that the advantages of microwave communication and optical communication are integrated in terahertz communication, and the terahertz communication has good confidentiality and anti-interference capability in the communication field. However, the application scenes of high-performance terahertz communication, radar, imaging and the like require terahertz waves of special phases, so that the phases of the terahertz waves need to be modulated. At present, the phase modulation of terahertz waves is mainly achieved by reflection and refraction of lenses. However, the existing modulation techniques have a problem of low flexibility. Disclosure of Invention In view of the foregoing, it is desirable to provide a terahertz wave modulation apparatus and system capable of improving flexibility of the terahertz wave modulation technique. In a first aspect, the present application provides a terahertz wave modulation apparatus. The terahertz wave modulation device comprises a plurality of resonance units, wherein the resonance units are arranged in a two-dimensional array, each resonance unit comprises a modulation unit and a dielectric layer, and the modulation unit is fixed on the first surface of the dielectric layer; The modulation unit is used for generating deformation under the condition of being loaded with preset voltage so as to carry out phase modulation on the incident terahertz wave. The device utilizes the dependency relationship between the input voltage of the resonance units and the phase of the reflected terahertz wave to set the input voltage of each resonance unit, thereby realizing the phase modulation of the terahertz wave reflected by each resonance unit. In addition, as the resonant units are arranged in a two-dimensional array, different preset voltages are loaded on the resonant units, the different phases of terahertz waves reflected by the resonant units on the two-dimensional array can be realized, compared with the prior art, the phase of the terahertz wave reflected by each resonance unit can be flexibly modulated according to the magnitude of the preset voltage loaded by each loaded resonance unit, namely, the flexibility of terahertz wave modulation is improved. In one embodiment, the resonant unit further comprises a back electrode, wherein the back electrode is fixed on the second surface of the dielectric layer, and the first surface is away from the second surface; The back electrode is for electrical connection with an external circuit. It should be noted that, since the first surface of the resonant unit needs to receive the incident terahertz wave and reflect the received terahertz wave, a high-density interconnection circuit cannot be designed on the first surface of the resonant unit, and therefore, a back electrode is disposed on the second surface of the resonant unit (the second surface is away from the first surface), and a voltage is applied to the back electrode, so that the modulating unit on the resonant unit deforms, and the phase of the incident terahertz wave is modulated. In one embodiment, the resonant unit further comprises a connecting component, wherein the connecting component is used for connecting the modulating unit and the back electrode, so that the modulating unit is fixed on the first surface of the dielectric layer, and the back electrode is fixed on the second surface of the dielectric layer. Wherein the material of the connection part is copper-plated silicon, the connection part can penetrate through the dielectric layer to connect the modulation unit and the back electrode, so that the modulation unit is fixed on one side of the dielectric layer, and the back electrode is fixed on the other side of the dielectric layer. In the above embodiment, the external modulating circuit is connected to the back electrode, and the back electrode is connected to the modulating unit through the connecting member, that is, the voltage applied by the external modulating circuit may be applied to the modulating unit through the back electrode and the connecting member, so that the modulating unit may deform, and the deformation may modulate the incident terahertz wave incident on the first surface of the dielectric layer. In one embodiment, the resonant unit further comprises a first insulating layer disposed between the first surface of the dielectric layer and the back electrode. In one embodiment, the resonant unit further comprises a second insulating layer, and the second insulating layer is arranged between the second surface of the dielectric layer and