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CN-116666253-B - Deep silicon etching equipment and assembly method thereof

CN116666253BCN 116666253 BCN116666253 BCN 116666253BCN-116666253-B

Abstract

The invention provides deep silicon etching equipment and an assembly method thereof, wherein the equipment comprises a limiting device, a first limiting device and a second limiting device, wherein the limiting device comprises an annular side wall, a plurality of notches recessed from the inner part of the annular side wall of the top surface of the annular side wall and the annular side wall are arranged at intervals; the device comprises a deep silicon reaction cavity, a limiting device sleeved on the lower part of the deep silicon reaction cavity, a Faraday shielding cover surrounding and covering the outer wall of the deep silicon reaction cavity, a fixing film stuck on the Faraday shielding cover and the outer wall of the deep silicon reaction cavity exposed by the notch of the limiting device, and a Faraday shielding cover fixed on the deep silicon reaction cavity. The invention can avoid the occurrence of the damage condition of the lower edge of the deep silicon reaction cavity, reduce spare part consumption and production cost, simplify installation, improve equipment maintenance efficiency and improve production efficiency.

Inventors

  • LIU GUOFENG

Assignees

  • 上海新微技术研发中心有限公司

Dates

Publication Date
20260505
Application Date
20220218

Claims (11)

  1. 1. A deep silicon etching apparatus, characterized in that the deep silicon etching apparatus comprises: the limiting device comprises an annular side wall, a plurality of notches which are recessed from the top surface of the annular side wall beyond the inner part of the annular side wall are arranged at the top of the annular side wall, and the notches are distributed at intervals; the limiting device is sleeved at the lower part of the deep silicon reaction cavity; The Faraday shielding cover is covered on the outer wall of the deep silicon reaction cavity in a surrounding mode, the lower edge of the Faraday shielding cover is connected with the upper edge of the limiting device, and a notch of the limiting device is exposed out of the outer wall of the deep silicon reaction cavity; And the fixed film is adhered to the Faraday shielding cover and the outer wall of the deep silicon reaction cavity exposed by the notch so as to fix the Faraday shielding cover on the deep silicon reaction cavity.
  2. 2. The deep silicon etching apparatus of claim 1, wherein the notch of the limiting device has a width of 30mm to 60 mm, and the distance between the lower edge of the notch and the bottom edge of the limiting device is 4 mm to 6 mm.
  3. 3. The deep silicon etching apparatus of claim 1, wherein the annular sidewall of the limiting device has a height of 10 mm to 15 mm.
  4. 4. The deep silicon etching apparatus of claim 1, wherein the inner diameter of the limiting device is equal to the outer diameter of the deep silicon reaction chamber.
  5. 5. The deep silicon etching apparatus according to claim 1, wherein the number of the notches is 3, and the notches are arranged in equal intervals.
  6. 6. The deep silicon etching apparatus of claim 1, wherein the limiting device is made of polytetrafluoroethylene.
  7. 7. The deep silicon etching apparatus of claim 1, wherein the deep silicon reaction chamber is made of ceramic.
  8. 8. The deep silicon etching apparatus of claim 1, wherein the inner wall of the lower edge of the deep silicon reaction chamber is partially removed for embedded connection of the base of the deep silicon reaction chamber, and the inner wall of the limiting device is attached to the outer wall of the lower edge of the deep silicon reaction chamber to strengthen the mechanical strength of the outer wall of the lower edge.
  9. 9. The deep silicon etching apparatus of claim 1, wherein the Faraday shield is attached to an outer wall of the deep silicon reaction chamber.
  10. 10. A method of assembling a deep silicon etching apparatus according to any one of claims 1 to 9, comprising the steps of: 1) Providing the limiting device and the deep silicon reaction cavity, wherein the inner wall of the lower edge of the deep silicon reaction cavity is removed by a part of thickness so as to enable the base of the deep silicon reaction cavity to be connected in an embedded manner, and the limiting device is sleeved at the lower part of the deep silicon reaction cavity; 2) Providing the Faraday shielding cover, surrounding and covering the Faraday shielding cover on the outer wall of the deep silicon reaction cavity, connecting the lower edge of the Faraday shielding cover with the upper edge of the limiting device, and exposing the outer wall of the deep silicon reaction cavity by a notch of the limiting device; 3) Providing the fixed film, and adhering the fixed film to the Faraday shielding cover and the outer wall of the deep silicon reaction cavity exposed by the notch so as to fix the Faraday shielding cover to the deep silicon reaction cavity; 4) And placing the deep silicon reaction cavity on a base, so that the base is embedded into the lower edge of the deep silicon reaction cavity.
  11. 11. The method of assembling a deep silicon etching apparatus as set forth in claim 10, wherein the Faraday shield surrounds the deep silicon reaction chamber, and wherein the Faraday shield is positioned in one of the notches.

Description

Deep silicon etching equipment and assembly method thereof Technical Field The invention belongs to the field of semiconductor integrated circuit manufacturing equipment, and particularly relates to deep silicon etching equipment and an assembly method thereof. Background Deep silicon etchers are widely applied in the field of semiconductor manufacturing, ceramic parts are generally used in a deep silicon reaction cavity, part of ceramic parts are required to be assembled and then installed in the reaction cavity, the edges of some ceramic parts are thin and have vacuum sealing surfaces, the sealing edges are easy to damage during assembly, the whole ceramic parts can be scrapped due to the influence of tightness when the damage is serious, and the ceramic parts are generally expensive, particularly large ceramic parts, such as the ceramic cavity of deep silicon etching equipment. The ceramic cavity of the deep silicon etching equipment can be subjected to the following problems that 1) the design lower edge of the ceramic reaction cavity of the deep silicon etching equipment is thin and has vacuum sealing requirement, the ceramic reaction cavity is easy to damage during installation, leakage rate problem of the process cavity or ceramic part rejection can be caused when the damage is serious, 2) a Faraday cover is required to be installed outside the ceramic reaction cavity before installation, the position from the lower edge of the Faraday cover to the lower edge of the cavity has size requirement (for example, 12 mm), the height position during installation needs to be repeatedly adjusted and confirmed by a caliper, at least two persons are required to cooperate, and the position is required to be fixed by a high-temperature adhesive tape in time after the position confirmation is good, so that the efficiency is low. It should be noted that the foregoing description of the background art is only for the purpose of providing a clear and complete description of the technical solution of the present application and is presented for the convenience of understanding by those skilled in the art. The above-described solutions are not considered to be known to the person skilled in the art simply because they are set forth in the background of the application section. Disclosure of Invention In view of the above-mentioned drawbacks of the prior art, an object of the present invention is to provide a deep silicon etching apparatus and an assembling method thereof, which are used for solving the problems of inconvenient installation and easy damage of the ceramic reaction chamber in the prior art. In order to achieve the above and other related objects, the invention provides deep silicon etching equipment, which comprises a limiting device, a deep silicon reaction cavity, a Faraday shield cover, a fixing film and a fixing film, wherein the limiting device comprises an annular side wall, a plurality of notches which are recessed from the top surface of the annular side wall beyond the inner part of the annular side wall are arranged at intervals, the limiting device is sleeved at the lower part of the deep silicon reaction cavity, the Faraday shield cover is circumferentially covered on the outer wall of the deep silicon reaction cavity, the lower edge of the Faraday shield cover is connected with the upper edge of the limiting device, the notches of the limiting device are exposed out of the outer wall of the deep silicon reaction cavity, and the fixing film is adhered to the Faraday shield cover and the outer wall of the deep silicon reaction cavity exposed by the notches so as to fix the Faraday shield cover on the deep silicon reaction cavity. Optionally, the gap width of the limiting device is between 30 mm and 60 mm, and the distance between the lower edge of the gap and the bottom edge of the limiting device is between 4 mm and 6 mm. Optionally, the height of the annular side wall of the limiting device is between 10 millimeters and 15 millimeters. Optionally, the inner diameter of the limiting device is equal to the outer diameter of the deep silicon reaction cavity. Optionally, the number of the notches is 3, and 3 notches are equidistantly arranged. Optionally, the material of the limiting device is polytetrafluoroethylene. Optionally, the deep silicon reaction cavity is made of ceramic. Optionally, the inner wall of the lower edge of the deep silicon reaction cavity is removed by a part of thickness so as to enable the base of the deep silicon reaction cavity to be connected in an embedded mode, and the inner wall of the limiting device is attached to the outer wall of the lower edge of the deep silicon reaction cavity so as to strengthen the mechanical strength of the outer wall of the lower edge. Optionally, the faraday shield is attached to the outer wall of the deep silicon reaction chamber. The invention further provides an assembly method of the deep silicon etching equipment, which comprises the