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CN-116815120-B - Ti-W-B coating and preparation method and application thereof

CN116815120BCN 116815120 BCN116815120 BCN 116815120BCN-116815120-B

Abstract

The invention relates to a Ti-W-B coating, a preparation method and application thereof, wherein the Ti-W-B coating is a nano-structure coating, the molecular structural expression of the Ti-W-B coating is Ti 1‑x W x B y , wherein x=0.06-0.55 and y=1.8-3.5, and the preparation method comprises the steps of performing magnetron sputtering on a substrate by adopting a TiB 2 target in an inert atmosphere, and performing high-power pulse magnetron sputtering on the substrate by adopting a W target to deposit the Ti-W-B coating on the surface of the substrate. The Ti-W-B coating and the preparation method thereof form a microcosmic TiB x /WB x nanometer composite structure by introducing the highly ionized W ions, can improve the hardness, toughness and lubricity of the coating, and can be widely applied to metal surface treatment or metal processing.

Inventors

  • LIN YISONG
  • ZHENG AIQIN
  • ZOU LINGLI
  • LIN LIANGLIANG
  • WU ZHENGTAO
  • LIU CHAO
  • WANG QIMIN
  • WEN XIAO
  • HE WEIDI
  • XU RONGJIE
  • WEI JIANQING

Assignees

  • 厦门金鹭特种合金有限公司
  • 广东工业大学
  • 厦门钨业股份有限公司

Dates

Publication Date
20260512
Application Date
20230630

Claims (20)

  1. 1. The Ti-W-B coating is characterized in that the Ti-W-B coating is a nano-structure coating; The molecular structural expression of the Ti-W-B coating is Ti 1-x W x B y ; wherein x=0.06-0.55, y=1.8-3.5; the Ti-W-B coating is prepared by the following method: in an inert atmosphere, performing magnetron sputtering on a substrate by adopting a TiB 2 target, and performing high-power pulse magnetron sputtering on the substrate by adopting a W target at the same time, and depositing a Ti-W-B coating on the surface of the substrate; the high-power pulse magnetron sputtering introduces high-ionized W ions to form a TiB x /WB x nano composite structure; The average sputtering power of the W target is 5-20W/cm 2 ; The peak current density of the target is 0.2-1.2A/cm 2 when the W target adopts high-power pulse magnetron sputtering.
  2. 2. The Ti-W-B coating of claim 1, wherein the size of the grains in the nanostructured coating is 5-50nm.
  3. 3. The Ti-W-B coating of claim 1, wherein the Ti-W-B coating has a hardness of 29.8-44.6GPa.
  4. 4. The Ti-W-B coating of claim 1, wherein the Ti-W-B coating has an elastic modulus of 395-596GPa.
  5. 5. The Ti-W-B coating of claim 1, wherein the Ti-W-B coating has a coefficient of friction of 0.22-0.65.
  6. 6. A method of producing a Ti-W-B coating according to any one of claims 1-5, comprising: in an inert atmosphere, performing magnetron sputtering on a substrate by adopting a TiB 2 target, and performing high-power pulse magnetron sputtering on the substrate by adopting a W target at the same time, and depositing a Ti-W-B coating on the surface of the substrate; The average sputtering power of the W target is 5-20W/cm 2 ; The peak current density of the target is 0.2-1.2A/cm 2 when the W target adopts high-power pulse magnetron sputtering.
  7. 7. The method of claim 6, wherein the magnetron sputtering method of the TiB 2 target comprises direct current magnetron sputtering or high power pulse magnetron sputtering.
  8. 8. The method of claim 7, wherein the TiB 2 target has an average sputter power of 5-15W/cm 2 .
  9. 9. The method of claim 7, wherein the TiB 2 target has a peak target current density of 0.2-0.8A/cm 2 when high power pulsed magnetron sputtering is used.
  10. 10. The method of claim 7, wherein the TiB 2 target is sputtered with at least 2 working cathodes.
  11. 11. The method of claim 6, wherein the number of working cathodes during sputtering of the W target is at least 2.
  12. 12. The method of claim 6, wherein the inert atmosphere comprises an argon atmosphere.
  13. 13. The method according to claim 12, wherein the pressure of the argon atmosphere is 0.2 to 0.8Pa.
  14. 14. The method of claim 6, wherein the deposition temperature is 50-500 ℃.
  15. 15. The method according to claim 6, wherein the revolution speed of the substrate at the time of deposition is 0.5 to 3rpm.
  16. 16. The method of claim 6, wherein the substrate is biased at-50 to-300V during the depositing.
  17. 17. The method of claim 6, wherein the substrate is further pretreated prior to deposition.
  18. 18. The method of claim 17, wherein the pretreatment comprises any one or a combination of at least two of mechanical grinding, polishing, or cleaning.
  19. 19. The method of claim 18, wherein the cleaning comprises any one or a combination of at least two of solvent cleaning, glow cleaning, or ion etching cleaning.
  20. 20. The preparation method according to claim 6, characterized in that the preparation method comprises the steps of: Pretreating a substrate, wherein the pretreatment comprises any one or a combination of at least two of mechanical grinding, polishing or cleaning, and the cleaning comprises any one or a combination of at least two of solvent cleaning, glow cleaning or ion etching cleaning; Carrying out direct-current magnetron sputtering or high-power pulse magnetron sputtering on the pretreated substrate by adopting a TiB 2 target material under the argon atmosphere with the pressure of 0.2-0.8Pa, and simultaneously carrying out high-power pulse magnetron sputtering on the substrate by adopting a W target material, wherein a Ti-W-B coating is obtained by depositing on the surface of the substrate, the deposition temperature is 50-500 ℃, the revolution speed of the substrate is 0.5-3rpm during deposition, and the bias voltage of the substrate is-50-300V during deposition; The average sputtering power of the TiB 2 target is 5-15W/cm 2 , the peak current density of the target when the TiB 2 target is sputtered by high-power pulse magnetron sputtering is 0.2-0.8A/cm 2 , and the number of working cathodes when the TiB 2 target is sputtered is at least 2; The average sputtering power of the W target is 5-20W/cm 2 , the peak current density of the target when the W target is sputtered by high-power pulse magnetron sputtering is 0.2-1.2A/cm 2 , and the number of working cathodes when the W target is sputtered is at least 2.

Description

Ti-W-B coating and preparation method and application thereof Technical Field The invention relates to the field of materials, in particular to a Ti-W-B coating, a preparation method and application thereof. Background Along with the upgrade of manufacturing technology, the demand for high-quality precise metal cutting processing is continuously rising, and the efficient, high-speed and high-precision cutting processing mode becomes the main development direction of current processing. In high-speed dry cutting, the cutting temperature reaches 900-1200 ℃ due to severe friction between the cutter and the surface of the processed material, so that the cutter has the problems of high temperature, poor red hardness, serious abrasion and the like. Therefore, it is critical to achieve high-speed cutting to deposit a hard coating on the tool surface. Titanium diboride (TiB 2) is one of the hard coatings and has excellent mechanical, physical and chemical properties of high melting point (about 3100 ℃), good thermal and electrical conductivity, high hardness, high wear resistance and corrosion resistance. The excellent properties of TiB 2 are due to its crystal structure and atomic bonding, tiB 2 crystallizes in a hexagonal structure, wherein the B atoms are located in the interstices between the Ti atoms in the hexagonal arrangement, and the B atoms combine to form a covalent B-B bond, forming a two-dimensional network. Therefore, the TiB 2 coating is widely applied to the fields of tool materials, weapon protection or friction elements for automobiles, and the like, particularly in the processing industry, and can provide good wear resistance and oxidation resistance protection for the surfaces of hard alloy cutters such as WC-Co, and the like, thereby prolonging the service life of the cutters. For example, tiB 2 has almost no chemical affinity with aluminum alloy and the like, and has small adhesion with processed materials, thereby avoiding generating built-up bits and cold welding and ensuring the reliability and production efficiency of finish machining. The TiB 2 coating has a friction coefficient of below 0.5 on the titanium alloy TC4 at 400 ℃, has a good self-lubricating effect on high-temperature oxidation products B 2O3 and the like, and can relieve the problems of severe bonding abrasion and diffusion abrasion between the titanium alloy material and the cutter, thereby prolonging the service life of the cutter. TiB 2 coating is prepared by sputtering TiB 2 target material in argon atmosphere, the deposited TiB 2 coating usually presents columnar crystal structure, and excessive B is easy to be separated out at grain boundary in stoichiometric ratio, so that the TiB 2 coating has the characteristics of large residual stress, poor toughness and the like. Therefore, how to achieve controllable adjustment of the stoichiometric ratio and internal stress of the TiB 2 coating is a key to expand the application of the TiB 2 coating. At present, a mechanism that the stoichiometric ratio easily appears in the sputtering deposition of TiB x is disclosed in a research ("Experiment and simulation of the compositional evolution of Ti–B thin films deposited by sputtering of a compound target",Neidhardt,J.,et al.,Journal of Applied Physics,2008,104(6):063304.), namely, a mass difference exists between Ar + and TiB 2 target sputtering particles, the overflow angle of B + is more concentrated than that of Ti +, and B + preferentially moves along the normal direction of the target, but a method strategy for controllably adjusting the stoichiometric ratio of a TiB 2 coating is not proposed. In addition, a method for reducing the stoichiometric ratio of TiB x by applying an external magnetic field between a substrate and a target material is proposed in research ("Controlling the boron-to-titanium ratio in magnetron-sputter-deposited TiBx thin films",Petrov,I.,et al.,Journal of Vacuum Science and Technology A,2017,35(5):050601.), namely, an external magnetic field pulls an ion beam to generate motion deflection, but the method involves equipment magnetic field transformation, plasma motion simulation and the like, and is complicated and difficult to apply in practice. In addition, in the actual cutting process, besides the oxidation resistance and the high-temperature mechanical property, the friction and wear properties of the coating are also one of important factors affecting the high-speed dry cutting performance of the coated cutter. In the high-temperature friction and abrasion process, the lubricating oxide B 2O3 generated on the surface of the TiB 2 coating is easy to scratch or remove after being liquefied, so that the TiB 2 coating has the characteristics of low friction coefficient and high abrasion rate, and the application of the TiB 2 coating is limited. Therefore, how to optimize the TiB 2 coating to reduce the residual stress of the coating and to improve toughness and high temperature wear resistance is a