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CN-116837337-B - Magnetron sputtering device

CN116837337BCN 116837337 BCN116837337 BCN 116837337BCN-116837337-B

Abstract

The invention relates to the technical field of sputtering coating processes, in particular to a magnetron sputtering device. Comprises a supporting seat and a magnet assembly. An adjusting component is arranged on the supporting seat. The magnet assembly comprises a magnetic yoke, a first magnet block, a second magnet block and a third magnet block, the adjusting assembly is connected with the magnetic yoke and is configured to adjust the distance between the magnet assembly and the target. The first type magnet block, the second type magnet block and the third type magnet block are arranged on the magnetic yoke, the first type magnet block is positioned at the two end positions of the magnetic yoke along the first direction, the third type magnet block is positioned at the middle position of the magnetic yoke, the second type magnet block is positioned between the first type magnet block and the third type magnet block, and the magnetizing directions of the first type magnet block, the second type magnet block and the third type magnet block are correspondingly adjusted, so that the magnetic field distribution of the magnet assembly is improved. The magnetron sputtering device can improve the utilization rate of the target material and save the cost.

Inventors

  • ZHANG YONGSHENG
  • GAO TONG
  • XIE CHUANJIA
  • ZHOU ZHENGUO
  • WU RUIJUN

Assignees

  • 苏州迈为科技股份有限公司

Dates

Publication Date
20260512
Application Date
20230717

Claims (8)

  1. 1. A magnetron sputtering apparatus, comprising: The device comprises a supporting seat (100), wherein an adjusting assembly (110) is arranged on the supporting seat (100); a magnet assembly (200), the magnet assembly (200) comprising a magnet yoke (240), a first type magnet block (210), a second type magnet block (220) and a third type magnet block (230), the adjustment assembly (110) being connected to the magnet yoke (240), the adjustment assembly (110) being configured to adjust a distance between the magnet assembly (200) and a target (300); The first type magnet block (210), the second type magnet block (220) and the third type magnet block (230) are arranged on the magnetic yoke (240), the first type magnet block (210) is positioned at two end positions of the magnetic yoke (240) along a first direction, the third type magnet block (230) is positioned at the middle position of the magnetic yoke (240), and the second type magnet block (220) is positioned between the first type magnet block (210) and the third type magnet block (230); The magnetizing direction of the first type magnet block (210) is inclined downwards towards the middle part of the magnetic yoke (240), and the magnetizing direction of the third type magnet block (230) is vertically upwards, or The magnetizing direction of the first-type magnet block (210) is inclined obliquely upwards towards the middle position far away from the magnetic yoke (240), and the magnetizing direction of the third-type magnet block (230) is vertically downwards; when the magnetizing direction of the first-type magnet block (210) is inclined obliquely downwards towards the middle position of the magnetic yoke (240), the magnetizing direction of the second-type magnet block (220) is inclined obliquely upwards towards the middle position of the magnetic yoke (240); When the magnetizing direction of the first type magnet block (210) is inclined obliquely upward toward a middle position away from the yoke (240), the magnetizing direction of the second type magnet block (220) is inclined obliquely downward toward a middle position away from the yoke (240).
  2. 2. The magnetron sputtering apparatus as claimed in claim 1, wherein a plurality of the first type magnet pieces (210) are provided, the plurality of the first type magnet pieces (210) being located at both end positions of the yoke (240), respectively.
  3. 3. The magnetron sputtering apparatus as claimed in claim 2, wherein the second type magnet blocks (220) are provided in plural, and the magnetizing direction of the plural second type magnet blocks (220) is transited from a slant upward or slant downward to a vertical direction in a direction near the middle position of the yoke (240).
  4. 4. The magnetron sputtering apparatus as claimed in claim 1, wherein a plurality of the third type magnet blocks (230) are provided, and a plurality of the third type magnet blocks (230) are located at a central position of the yoke (240).
  5. 5. The magnetron sputtering device according to claim 1, wherein a preset distance is set between the first type magnet block (210) and the second type magnet block (220), and the preset distance is between 5mm and 30 mm.
  6. 6. Magnetron sputtering device according to any of claims 1-5, wherein the support (100) is provided with a flow channel (120), the flow channel (120) being in communication with a cooling water source.
  7. 7. The magnetron sputtering device according to claim 6, wherein both ends of the support base (100) are provided with a water inlet (130) and a water outlet (140), the water inlet (130) and the water outlet (140) are both communicated with the flow passage (120), and the water inlet (130) and the water outlet (140) are both communicated with the cooling water source.
  8. 8. Magnetron sputtering device according to claim 1, characterized in that the adjustment assembly (110) is provided as a bolt, the adjustment assembly (110) being screwed with the support base (100).

Description

Magnetron sputtering device Technical Field The invention relates to the technical field of sputtering coating processes, in particular to a magnetron sputtering device. Background At present, the middle magnet pole of a magnetic rod in the magnetron sputtering device is N/S face upwards, the outer magnet pole is S/N face upwards, and the magnetizing directions of all magnets are vertical upwards or vertical downwards. In the actual operation process, the target in the magnetron sputtering device continuously rotates, in the target rotation process, as shown in fig. 1, due to the existence of a U-shaped etching runway 330 at the end part of the magnetic rod, the axial etching component (the direction shown by an arrow A in fig. 1) at the end part of the U-shaped etching runway 330 is obviously larger than the etching component (the direction shown by an arrow B in fig. 1) at the middle part, so that the etching rate of the axial direction of the end part of the magnetic rod is larger than the etching rate of the middle part of the magnetic rod, deep points appear at the end part of the etching runway in the etching process, and along with the consumption of the target, the surface of the target is closer to the magnetic rod, the magnetic field intensity is stronger, the etching phenomenon at the end part of the magnetic rod is aggravated, a V-shaped etching groove is finally formed, and after the V-shaped etching groove is etched through, the service life of the target is expired, but the middle part of the target is still thicker, so that the target is low in utilization rate, the target is wasted, and the cost is increased. Therefore, there is a need to design a magnetron sputtering device to solve the above technical problems. Disclosure of Invention The invention aims to provide a magnetron sputtering device which can improve the utilization rate of a target material and save the cost. To achieve the purpose, the invention adopts the following technical scheme: the present invention provides a magnetron sputtering device, comprising: the support seat is provided with an adjusting component; The magnet assembly comprises a magnetic yoke, a first type magnet block, a second type magnet block and a third type magnet block, the adjusting assembly is connected with the magnetic yoke and is configured to adjust the distance between the magnet assembly and a target; The first type magnet block, the second type magnet block and the third type magnet block are all arranged on the magnetic yoke, the first type magnet block is positioned at the two end positions of the magnetic yoke along the first direction, the third type magnet block is positioned at the middle position of the magnetic yoke, and the second type magnet block is positioned between the first type magnet block and the third type magnet block; the magnetizing direction of the first type magnet block is inclined downwards towards the middle part of the magnetic yoke, and the magnetizing direction of the third type magnet block is vertically upwards, or The magnetizing direction of the first type magnet block is inclined obliquely upwards towards the middle position far away from the magnetic yoke, and the magnetizing direction of the third type magnet block is vertically downwards. As an alternative technical scheme of the magnetron sputtering device, when the magnetizing direction of the first type magnet block is inclined obliquely downwards towards the middle position of the magnetic yoke, the magnetizing direction of the second type magnet block is inclined obliquely upwards towards the middle position of the magnetic yoke, and when the magnetizing direction of the first type magnet block is inclined obliquely upwards towards the middle position far away from the magnetic yoke, the magnetizing direction of the second type magnet block is inclined obliquely downwards towards the middle position far away from the magnetic yoke. As an alternative technical scheme of the magnetron sputtering device, the number of the first type magnet blocks is plural, and the plural first type magnet blocks are respectively positioned at two end positions of the magnetic yoke. As an alternative technical scheme of the magnetron sputtering device, the second type magnet blocks are arranged in a plurality, and along the direction close to the middle position of the magnetic yoke, the magnetizing directions of the second type magnet blocks are changed from oblique upward/downward inclination to vertical transition. As an alternative technical scheme of the magnetron sputtering device, the magnetizing directions of the second-type magnet blocks are gradually reduced from the oblique upward/downward inclination toward the vertical direction. As an alternative technical scheme of the magnetron sputtering device, a plurality of third-class magnet blocks are arranged, and the third-class magnet blocks are all positioned at the middle position of the magnetic yoke. As an alt