CN-116859674-B - Improvement method for film stripping of post-processing process caused by Com Metal crash

Abstract

The invention discloses a ComMetal post-processing film stripping improvement method, which relates to the technical field of display production and comprises ComMetal film pulling for pulling off an abnormal CM film layer caused by a machine, organic cleaning for cleaning the surface of an Organic photoresist, baking the Organic layer to fully evaporate water absorbed by the Organic layer, cleaning the surface of the Organic layer after baking, cleaning foreign matters, forming a ComMetal film layer, patterning to form ComMetal photoresist, performing Com Metal line etching through development, removing ComMetal photoresist, and completing a reworking flow. The method for improving the film peeling of the post-processing film caused by ComMetal machine-on is provided by the invention, and the film peeling abnormality of the post-processing film is improved by adding the CM machine-on piece into the OC baking process in the reworking flow.

Inventors

• ZHENG XIAOHUI
• XIE JIE
• Deng Yuankui
• Zhu Huageng

Assignees

• 福建华佳彩有限公司

Dates

Publication Date

20260505

Application Date

20230609

Claims (5)

1. 1. The method for improving the film stripping of the post-processing film caused by the Com Metal machine is characterized by comprising the following steps: a CME film pulling step, namely a Com Metal film pulling step, which is used for pulling out an abnormal CM film layer caused by the shutdown; OC CLN step, organic cleaning, which is used for cleaning the surface of the Organic photoresist; OC Rebake, baking the Organic layer to fully evaporate the absorbed moisture, wherein in OC Rebake, the baking temperature is 230 ℃; the OC Re-CLN step is that the Organic layer is cleaned after baking, and the foreign matters on the surface are cleaned; CMS step, forming a Com Metal film layer; CMD step, patterning to form a Com Metal photoresist; A CME line etching step of performing Com Metal line etching by development; and the CMR step is to remove the Com Metal photoresist and complete the reworking flow, wherein in the CMR step, STR liquid is adopted to remove the Com Metal photoresist, and the STR liquid comprises MEA and DMSO.
2. 2. The method of claim 1, wherein the baking time in OC Rebake steps is 48 minutes.
3. 3. The method according to claim 1, wherein in the OC Re-CLN step, pure water is used to clean the surface foreign matter.
4. 4. The method of claim 1, wherein in the CME stripping step, the abnormal CM layer is stripped using an aluminate.
5. 5. The method of claim 1, wherein the OC CLN step is performed by cleaning the organic photoresist surface with pure water.

Description

Improvement method for film stripping of post-processing process caused by Com Metal crash Technical Field The invention relates to the technical field of display production, in particular to an improvement method for film stripping in a post-processing procedure caused by a Com Metal on-machine. Background During the production process, the machine is started up for various reasons, such as incapacitation caused by abnormal transmission sensor, abnormal transmission shaft, broken pieces and the like. In a CM (Com Metal) process, as shown in fig. 1, a CM layer is formed on an OC layer. However, if the machine is on, the film layer cannot be formed normally, so that the CM machine is reworked, i.e. the abnormal film layer caused by the machine is removed first, and the process is performed again after cleaning, as shown in fig. 2. However, the reworked machine sheet is easy to peel in the later process, as shown in fig. 3 and 4, and is scrapped, so that the production yield is reduced. Disclosure of Invention The invention aims to solve the technical problem of providing an improvement method for film peeling of a post-process caused by a Com Metal working machine, which can improve the abnormality of film peeling of the post-process by adding an OC baking process into a CM working machine sheet in a reworking flow. The invention is realized in the following way: an improvement method for film peeling in a post-process caused by a Com Metal crash, comprising: a CME step, namely removing a Com Metal film, for removing an abnormal CM film layer caused by the off-machine; OC CLN step, organic cleaning, which is used for cleaning the surface of the Organic photoresist; OC Rebake, baking the Organic layer to fully evaporate the absorbed water; the OC Re-CLN step is that the Organic layer is cleaned after baking, and the foreign matters on the surface are cleaned; CMS step, forming a Com Metal film layer; CMD step, patterning to form a Com Metal photoresist; CME step, performing Com Metal line etching by developing; and CMR step, removing the Com Metal photoresist to complete the reworking process. Further, in the OC Rebake step, the baking temperature is 230 ℃. Further, in the OC Rebake step, the baking time is 48min. Further, in the OC Re-CLN step, pure water is adopted to clean the surface foreign matters. Further, in the CME step, the abnormal CM layer is removed using aluminate. Further, in the OC CLN step, pure water is adopted to clean the organic photoresist surface. Further, in the CMR step, the Com Metal photoresist is removed by using an STR solution, and the components of the STR solution include MEA and DMSO. The invention has the following advantages: By adding the OC baking step in the reworking process of the CM chip, the absorbed water is fully evaporated, the abnormal film stripping of the post-processing process can be improved, the product rejection rate is reduced, and the line pass rate is improved. Drawings The invention will be further described with reference to examples of embodiments with reference to the accompanying drawings. FIG. 1 is a schematic diagram of a conventional CM process with a normal and improper membrane structure; FIG. 2 is a schematic diagram of a conventional film structure of a CM process; FIG. 3 is a schematic diagram of a membrane stripping structure of a CM post-crash process in the prior art; FIG. 4 is a partial view of a membrane strip product of a CM off-the-shelf process in the prior art; FIG. 5 is a flow chart of a method according to an embodiment of the present invention; FIG. 6 is a schematic view showing the evaporation of water at step OC Rebake of the present invention; FIG. 7 is a schematic diagram of a CM post-processing layer structure according to an embodiment of the present invention; FIG. 8 is a graph showing the result of the yield verification of ATP according to the embodiment of the present invention; FIG. 9 is a yield result of quantity verification P test in an embodiment of the invention; FIG. 10 is a graph showing a number of verification P test yield results according to an embodiment of the present invention. Detailed Description The embodiment of the invention provides a method for improving film peeling of a post-process caused by a Com Metal crash, which can improve film peeling abnormality of the post-process by adding an OC baking process into a CM crash chip in a reworking flow. The technical scheme in the embodiment of the invention has the following overall thought: The inventor finds that in the production process, when the CM (Com Metal) process is in the production process, if the machine-on-machine condition is generated, after the CM machine-on-machine is subjected to the reworking process, the membrane peeling easily occurs in the later process to cause scrapping, and the production yield is reduced, so that the machine-on-machine reworking process needs to be improved, the yield is improved, and the productivity loss is r