CN-116938214-B - Radio frequency switch unit, radio frequency switch circuit, integrated circuit chip and electronic device

Abstract

The application relates to a radio frequency switch unit, a radio frequency switch circuit, an integrated circuit chip and an electronic device. The radio frequency switch unit comprises a first inductor pair, a first switch module, a second switch module and a first absorption circuit, wherein the first inductor pair comprises a first inductor and a second inductor, a first end of the first inductor is connected with a first node, a second end of the first inductor is connected with a second end of the second inductor, a first end of the first switch module is connected with the second end of the first inductor and the second end of the second inductor, the second end of the first switch module is grounded, a first end of the second switch module is connected with the second node, a second end of the second switch module is connected with the first end of the first absorption circuit, the second end of the first absorption circuit is grounded, and the first absorption circuit comprises a first resistor and a first capacitor which are connected in parallel. By the embodiment of the application, the chip area occupied by the radio frequency switch unit is smaller, and the chip cost is reduced.

Inventors

• LIU SHISHENG

Assignees

• 深圳市晶准通信技术有限公司

Dates

Publication Date

20260508

Application Date

20220401

Claims (20)

1. 1. A radio frequency switching unit comprising a first inductor pair, a first switching module, a second switching module and a first snubber circuit, wherein: The first inductor pair comprises a first inductor and a second inductor, a first end of the first inductor is connected with a first node of the radio frequency switch unit, a second end of the first inductor is connected with a second end of the second inductor, the first end of the second inductor is connected with a second node of the radio frequency switch unit, and the first inductor and the second inductor are arranged adjacently and generate induction magnetic fields with opposite directions; The first switch module is used for being turned on or off under the control of a control signal, a first end of the first switch module is connected with a second end of the first inductor and a second end of the second inductor, and a second end of the first switch module is grounded; The second switch module is used for being turned on or off together with the first switch module under the control of the control signal, the first end of the second switch module is connected with the second node of the radio frequency switch unit, the second end of the second switch module is connected with the first end of the first absorption circuit, the second end of the first absorption circuit is grounded, and The first absorption circuit comprises a first resistor and a first capacitor which are connected in parallel, wherein the first end of the first resistor and the first end of the first capacitor are connected together to serve as the first end of the first absorption circuit, and the second end of the first resistor and the second end of the first capacitor are connected together to serve as the second end of the first absorption circuit.
2. 2. The radio frequency switching unit according to claim 1, wherein the channel between the first node and the second node is off when the first and second switching modules are turned on under the control of the control signal, and wherein the channel between the first and second nodes is on when the first and second switching modules are turned off under the control of the control signal.
3. 3. The radio frequency switching unit of claim 1, further comprising an isolation enhancement module, wherein a first end of the first inductor is connected to the first node through the isolation enhancement module, the isolation enhancement module comprising K first isolation enhancement modules, M second isolation enhancement modules, and N third isolation enhancement modules in series, wherein K, M and N are each integers greater than or equal to 0 and K, M and N are not simultaneously equal to 0, a first end of a first one of the K first isolation enhancement modules, M second isolation enhancement modules, and N third isolation enhancement modules in series is connected to the first node, a second end of a last one is connected to the first end of the first inductor, and a second end of each other is connected to a first end of a next one, wherein: The first isolation enhancement module comprises a second inductor pair, a third switch module and a fourth switch module, wherein the second inductor pair comprises a third inductor and a fourth inductor, a first end of the third inductor is used as a first end of the first isolation enhancement module, a second end of the third inductor is connected with a second end of the fourth inductor, a first end of the third switch module is connected to the second end of the third inductor and the second end of the fourth inductor, a second end of the third switch module is grounded, a first end of the fourth switch module is connected to the first end of the fourth inductor and used as a second end of the first isolation enhancement module, a second end of the fourth switch module is grounded, and the third switch module and the fourth switch module are used for being turned on or off together with the first switch module and the second switch module under the control of the control signal; The second isolation enhancement module comprises a third inductor pair and a fifth switch module, wherein the third inductor pair comprises a fifth inductor and a sixth inductor, the first end of the fifth inductor is used as the first end of the second isolation enhancement module, the second end of the fifth inductor is connected with the second end of the sixth inductor, the first end of the fifth switch module is connected to the second end of the fifth inductor and the second end of the sixth inductor, the second end of the fifth switch module is grounded, the first end of the sixth inductor is used as the second end of the second isolation enhancement module, the fifth switch module is used for being turned on or off together with the first switch module and the second switch module under the control of the control signal, and The third isolation enhancement module comprises a seventh inductor and a sixth switch module, wherein the first end of the seventh inductor is used as the first end of the third isolation enhancement module, the second end of the seventh inductor is connected to the first end of the sixth switch module, the second end of the sixth switch module is grounded, the first end of the sixth switch module is used as the second end of the third isolation enhancement module, and the sixth switch module is used for being turned on or turned off together with the first switch module and the second switch module under the control of the control signal.
4. 4. A radio frequency switching unit according to claim 3, characterized in that: At least one of the third inductance, the fourth inductance, the third switching module, and the fourth switching module of at least one of the K first isolation enhancement modules has different parameters than the other first isolation enhancement modules; At least one of the fifth inductance, the sixth inductance, and the fifth switching module of at least one of the M second isolation enhancement modules has different parameters than the other second isolation enhancement modules; At least one of the seventh inductance and the sixth switching module of at least one of the N third isolation enhancement modules has different parameters than the other third isolation enhancement modules.
5. 5. The radio frequency switching unit of claim 1, wherein the first or second switching module comprises a transistor switching device having a first end as the first end of the first switching module and a second end as the second end of the first switching module.
6. 6. A radio frequency switching unit according to claim 3, characterized in that the third, fourth, fifth or sixth switching module comprises a transistor switching device, the first end of which is the first end of the third, fourth, fifth or sixth switching module and the second end of which is the second end of the first switching module.
7. 7. The radio frequency switching unit of claim 5 or 6, wherein the first, second, third, fourth, fifth or sixth switching module further comprises an ac suppressing device, a first end of the ac suppressing device being connected to the control signal, a second end of the ac suppressing device being connected to a control end of the transistor switching device.
8. 8. The radio frequency switching unit of claim 7, wherein the ac suppression device is a resistor and the transistor switching device is a transistor.
9. 9. The radio frequency switching unit of claim 7, wherein the ac suppression device is an inductor and the transistor switching device is a transistor.
10. 10. The radio frequency switching unit of claim 7, wherein the ac suppressing device is a resistor, the transistor switching device is a transistor, the first or second switching module further comprises an inductor, wherein a first end of the resistor is connected to the first or second control signal, a second end of the resistor is connected to a control end of the transistor, and two ends of the inductor are connected to the first and second ends of the transistor, respectively.
11. 11. The radio frequency switching unit of claim 7, wherein the ac suppressing device is a resistive voltage divider network, the transistor switching device comprises a transistor array of a plurality of transistors arranged in m columns and n rows, where m is an integer greater than or equal to 1 and n is an integer greater than 1, the control terminal of each of the transistors of the n rows being connected to the resistive voltage divider network, the second terminal of the transistor of the first of the n rows being connected to the second terminal of the first or second switching module, the first terminal of the transistor of the last of the n rows being connected to the first terminal of the first or second switching module, the two ends of each of the transistors of the m columns being connected in series in sequence, the resistive voltage divider network being operable to provide the first or second control signal, respectively, to the transistors of each of the n rows.
12. 12. The radio frequency switching unit of claim 3, wherein the first, second, third, fourth, fifth, or sixth switching modules comprise a transistor, a first ac suppression device, a second ac suppression device, a third ac suppression device, a first capacitance, a second capacitance, wherein: a first end of the first alternating current containment device is used as a first control signal end, and a second end of the first alternating current containment device is connected to a control end of the transistor; One end of the first capacitor is connected with the first end of the transistor, the other end of the first capacitor is used as the first end of the first or second switch module, one end of the second alternating current containment device is connected between the first end of the transistor and the first capacitor, and the other end of the second alternating current containment device is used as a second control signal end; One end of the second capacitor is connected with the second end of the transistor, the other end of the second capacitor is used as the second end of the first or second switch module, one end of the third alternating current containment device is connected between the second end of the transistor and the second capacitor, and the other end of the third alternating current containment device is connected to a second control signal end; One of the first control signal end and the second control signal end is connected with the control signal, and the other is connected with a reference level.
13. 13. The radio frequency switching unit according to any of claims 1-6, characterized in that the first inductance and the second inductance are both spiral inductances and are arranged in opposite spiral directions in the radio frequency switching unit.
14. 14. The radio frequency switching unit according to any of claims 1-6, wherein the first inductance and the second inductance are arranged as mirror images of each other in the radio frequency switching unit.
15. 15. The radio frequency switching unit according to any one of claims 1-6, wherein the first inductor is formed by a first microstrip line and the first microstrip line is wound in a first spiral pattern, the second inductor is formed by a second microstrip line and the second microstrip line is wound in a second spiral pattern, wherein a first end and a second end of the first microstrip line are respectively a first end and a second end of the first inductor, respectively a first end and a second end of the second microstrip line are respectively a first end and a second end of the second inductor, and the second ends of the first microstrip line and the second microstrip line are connected together such that the first microstrip line and the second microstrip line form a combined microstrip line.
16. 16. The radio frequency switching unit according to claim 15, wherein the first and second spiral patterns do not overlap and are adjacent but at a distance in a direction parallel to a wiring layer of the radio frequency switching unit.
17. 17. The radio frequency switching unit according to claim 15, wherein the merged microstrip line is composed of multiple layers of metallic material, wherein each layer of metallic material is located in a different wiring layer of the radio frequency switching unit.
18. 18. The radio frequency switching unit according to claim 15, wherein the merged microstrip line is composed of a single layer of metal material, wherein the single layer of metal material is located in the same or different wiring layers of the radio frequency switching unit.
19. 19. A radio frequency switching circuit comprising a plurality of radio frequency switching units as claimed in any one of claims 1 to 18, wherein: the first nodes of the plurality of radio frequency switch units are connected as a common node.
20. 20. The radio frequency switching circuit of claim 19, wherein the respective control signals of the plurality of radio frequency switching units are configured such that only one of the plurality of radio frequency switching units is turned on at a time.

Description

Radio frequency switch unit, radio frequency switch circuit, integrated circuit chip and electronic device Technical Field The present application relates to the field of electronic circuits, and in particular, to a radio frequency switch unit, a radio frequency switch circuit, an integrated circuit chip, and an electronic device. Background The radio frequency switch is used for controlling the on-off or path selection of a radio frequency signal, is a common device in a radio frequency path, and has wide application in a plurality of fields such as a radio frequency system, an electronic measuring instrument and the like. With the expansion of the application occasions of the radio frequency system and the increase of the use amount of the switch, the radio frequency switch is developed towards the directions of high integration level, small size and low cost. The existing radio frequency switch or radio frequency switch chip is mostly formed by elements such as a switch type transistor, a concentrated parameter element inductance, a concentrated parameter element capacitance, a resistor, a microstrip line and the like. In the element, inductance, microstrip line, capacitance and the like can generate electromagnetic radiation and other induced magnetic fields or electric fields and the like due to signal excitation, and the physical fields can influence the arrangement and normal operation of other elements. In the design or manufacture of a radio frequency switch or a radio frequency switch chip, in order to solve the problem of electromagnetic compatibility between elements, the existing method is to keep a larger arrangement space between elements to realize electromagnetic compatibility, which results in a larger size of the radio frequency switch or the radio frequency switch chip, which is inconvenient for high-density integration and inconvenient for cost reduction. In addition, electromagnetic radiation, induced magnetic fields or electric fields can cause energy loss, sacrificing the performance of the rf switch or rf switch chip. In order to realize popularization of high-frequency wireless communication technology, reducing the cost of components and improving the performance of the components are urgent problems to be solved. Disclosure of Invention The embodiment of the application provides a radio frequency switch unit, a radio frequency switch circuit, an integrated circuit chip and an electronic device, so as to provide a radio frequency switch with smaller size. According to an aspect of the present application, there is provided a radio frequency switching unit comprising a radio frequency switching unit characterized by comprising a first inductor pair, a first switching module, a second switching module and a first snubber circuit, wherein: The first inductor pair comprises a first inductor and a second inductor, a first end of the first inductor is connected with a first node of the radio frequency switch unit, a second end of the first inductor is connected with a second end of the second inductor, the first end of the second inductor is connected with a second node of the radio frequency switch unit, and the first inductor and the second inductor are arranged adjacently and generate induction magnetic fields with opposite directions; The first switch module is used for being turned on or off under the control of a control signal, a first end of the first switch module is connected with a second end of the first inductor and a second end of the second inductor, and a second end of the first switch module is grounded; The second switch module is used for being turned on or off together with the first switch module under the control of the control signal, the first end of the second switch module is connected with the second node of the radio frequency switch unit, the second end of the second switch module is connected with the first end of the first absorption circuit, the second end of the first absorption circuit is grounded, and The first absorption circuit comprises a first resistor and a first capacitor which are connected in parallel, wherein the first end of the first resistor and the first end of the first capacitor are connected together to serve as the first end of the first absorption circuit, and the second end of the first resistor and the second end of the first capacitor are connected together to serve as the second end of the first absorption circuit. According to another aspect of the present application, there is provided a radio frequency switching circuit comprising a plurality of radio frequency switching units as described above, wherein: the first nodes of the plurality of radio frequency switch units are connected as a common node. According to still another aspect of the present application, there is provided an integrated circuit chip including the radio frequency switching unit as described above. According to yet another aspect of the present application,