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CN-116949425-B - Semiconductor processing chamber, semiconductor processing apparatus, and vapor phase epitaxy apparatus

CN116949425BCN 116949425 BCN116949425 BCN 116949425BCN-116949425-B

Abstract

The invention discloses a semiconductor processing cavity, semiconductor processing equipment and vapor phase epitaxy equipment, which solve the technical problems of process gas uniformity, infrared radiation transmittance and pressure bearing capacity in the field of semiconductor processing, mainly cover an upper cover of the processing cavity through a pressure bearing shell, form a closed space, adjust the air pressure of the closed space by using a pressure adjusting device, further adjust the air pressure born by the upper and lower surfaces of the upper cover of the semiconductor processing cavity, optimize the structural design of the upper cover, and further realize the purpose of realizing the higher uniformity and higher quality processing on the surface of a substrate in the semiconductor processing process.

Inventors

  • TAO HANG
  • PANG YUNLING
  • CONG HAI
  • JIANG YONG
  • YIN ZHIYAO

Assignees

  • 中微半导体设备(上海)股份有限公司

Dates

Publication Date
20260512
Application Date
20220419

Claims (20)

  1. 1. A semiconductor processing chamber for processing a substrate, comprising: a hollow chamber frame having an air inlet for introducing process gas and an air outlet, one side of the chamber frame being provided with an opening; The upper cover can penetrate through heat radiation, is matched and connected with the opening and is arranged on the chamber frame, the upper cover and the chamber frame enclose a processing space, the processing space is used for accommodating the substrate and carrying out process treatment on the substrate, the upper cover comprises a window positioned in the middle of the upper cover and an outer edge surrounding the window, the upper cover is made of quartz material, and the outer edge is made of opaque quartz material; A pressure-bearing shell arranged above the upper cover and enclosing a closed space with the upper cover and at least part of the chamber frame, and The pressure regulating device is used for regulating the pressure of the closed space; The treatment cavity further comprises a lower cover which is oppositely arranged on the other side of the cavity frame with the upper cover, the treatment space is surrounded by the upper cover, the lower cover and the cavity frame, the closed space is communicated with the atmospheric environment through a pressure regulating device, the lower surface of the lower cover is in the atmospheric environment, and the lower cover is in a dome shape.
  2. 2. The semiconductor processing chamber of claim 1, wherein the pressure housing is hermetically connected to the outer sidewall of the chamber frame by fasteners.
  3. 3. The semiconductor processing chamber of claim 1, wherein the chamber frame comprises an upper frame and a lower frame, the aperture being disposed on the upper frame.
  4. 4. The semiconductor processing chamber of claim 1, further comprising a mounting ring of metal, wherein the lid is hermetically mounted on the mounting ring, and wherein the mounting ring is mounted on the opening.
  5. 5. The semiconductor processing chamber of claim 1, wherein the window is a transparent quartz material.
  6. 6. The semiconductor processing chamber of claim 1, wherein the outer rim is hermetically secured to the rim of the opening by a seal ring.
  7. 7. The semiconductor processing chamber of claim 1, wherein the pressure regulating device comprises a vacuum pump and the pressure housing comprises an exhaust port coupled to the vacuum pump.
  8. 8. The semiconductor processing chamber of claim 1, wherein the pressure regulating means comprises: the monitoring module is used for measuring the air pressure value of the processing space and/or the closed space; The control module is used for presetting a safe air pressure difference and adjusting the pressure of the processing space and the pressure of the closed space according to the safe air pressure difference according to the air pressure value.
  9. 9. The semiconductor processing chamber of claim 1, wherein the pressure-bearing housing comprises a heat exchange system.
  10. 10. The semiconductor processing chamber of claim 9, wherein the heat exchange system comprises a helium gas source into the enclosed space.
  11. 11. The semiconductor processing chamber of claim 1, wherein the chamber frame and/or the pressure housing are metallic.
  12. 12. The semiconductor processing chamber of claim 1, wherein the pressure regulating device is configured to regulate the pressure of the enclosed space to less than 1 standard atmosphere during processing.
  13. 13. The semiconductor processing chamber of claim 1, wherein the pressure regulating device is configured to regulate the pressure of the enclosed space to less than 0.5 atmospheres gauge during the process.
  14. 14. The semiconductor processing chamber of claim 1, further comprising a lower cover disposed on the other side of the chamber frame opposite the upper cover, wherein the processing space is defined by the upper cover, the lower cover and the chamber frame, and wherein the pressure regulating device regulates the pressure in the enclosed space during the process such that the air pressure borne by the outer surface of the upper cover is greater than or equal to the air pressure of the processing space and less than the air pressure borne by the outer surface of the lower cover.
  15. 15. The semiconductor processing chamber of claim 1, wherein the window has a shape of an upwardly curved dome or flat plate or a downwardly curved depression.
  16. 16. The semiconductor processing chamber of claim 15, wherein the upper surface of the window is provided with an annular rib dividing the window into a central region within the annular rib and an edge region between the outer rim and the annular rib, the annular rib further being provided with a plurality of gas passages for communicating the central region with the space of the edge region.
  17. 17. A semiconductor processing chamber for processing a substrate, comprising: the device comprises a chamber with a closed processing space, wherein the chamber comprises an upper cover which can transmit heat radiation, the upper cover comprises a window positioned in the middle of the upper cover and an outer edge surrounding the window, the upper cover is made of quartz material, the outer edge is made of opaque quartz material, and the processing space is used for accommodating the substrate and carrying out process treatment on the substrate; A pressure-bearing shell connected with a partial area of the cavity to form a closed space, at least a partial area of the upper cover is positioned in the closed space, and The pressure regulating device is used for regulating the pressure of the closed space; The chamber further comprises a lower cover which is arranged opposite to the upper cover, the treatment space is surrounded by the upper cover and the lower cover, the closed space is communicated with the atmospheric environment through a pressure regulating device, the lower surface of the lower cover is in the atmospheric environment, and the lower cover is in a dome shape.
  18. 18. The semiconductor processing chamber of claim 17, wherein the lid is integrally disposed with the chamber or directly or indirectly disposed within an aperture disposed in the chamber.
  19. 19. The semiconductor processing chamber of claim 17, wherein the pressure regulating device is configured to regulate a pressure within the enclosed space to a pressure within the processing space during processing.
  20. 20. The semiconductor processing chamber of claim 19, wherein the pressure regulating device is configured to regulate a pressure in the enclosed space to less than 1 standard atmosphere during processing.

Description

Semiconductor processing chamber, semiconductor processing apparatus, and vapor phase epitaxy apparatus Technical Field The present invention relates to the field of semiconductor technology, and in particular, to a semiconductor processing chamber, a semiconductor processing apparatus, and a vapor phase epitaxy apparatus. Background At present, a semiconductor process piece or a substrate is subjected to micromachining in a process mode such as plasma etching, physical vapor deposition (Physical Vapor Deposition, PVD for short), chemical vapor deposition (Chemical Vapor Deposition, CVD for short) and the like, for example, a flexible display screen, a flat panel display, a light-emitting diode, a solar cell and the like are manufactured. Micromachining fabrication involves a variety of different processes and steps, of which a relatively wide range of chemical vapor deposition processes are employed, which can deposit a wide range of materials, including a wide range of insulating materials, most metallic materials, and metallic alloy materials, typically in high vacuum reaction chambers. With the ever shrinking feature sizes of semiconductor devices and ever increasing device integration, ever increasing demands are placed on the uniformity of chemical vapor deposited films. Although the performance of the chemical vapor deposition device is greatly improved after multiple updating, the chemical vapor deposition device still has a plurality of defects in the aspect of film deposition uniformity, and particularly, as the size of a substrate is increasingly increased, the conventional vapor deposition method and equipment are difficult to meet the requirement of film uniformity. In the thin film deposition process, various process conditions affect the uniformity of thin film deposition on the surface of the substrate, such as the direction and distribution of the flow of the reaction gas, the heating temperature field of the substrate, the pressure distribution in the reaction chamber, etc. If the process environment of the reaction area in the reaction chamber is not completely consistent, the film deposited on the surface of the substrate can generate adverse phenomena such as uneven thickness, uneven components, uneven physical characteristics and the like, thereby reducing the yield of the substrate production. Accordingly, improvements to existing chemical vapor deposition apparatus are needed to improve the uniformity of substrate film deposition. Furthermore, for epitaxial growth processes of silicon or silicon germanium materials, since these epitaxial materials are typically the bottom layers of semiconductor devices, the Critical Dimension (CD) is very small, typically only a few nanometers, and cannot withstand high temperatures for long periods of time, which would otherwise result in damage to the semiconductor device, it is necessary to heat the substrate to a temperature sufficient to perform epitaxial growth of the silicon material, such as 600-700 degrees, in a very short period of time. Because of this severe temperature rise requirement, silicon epitaxy processes typically use high power heating lamps to heat substrates located in a reaction chamber through a transparent reaction chamber formed of quartz. Because the pressure in the reaction chamber is far lower than the atmospheric pressure outside the quartz reaction chamber, in order to maintain the reaction chamber structure not to be deformed or broken due to the huge pressure difference between the inside and the outside of the chamber, the pressure-resistant structure needs to be designed on the chamber. For example, a plurality of reinforcing ribs are arranged around the reaction chamber with the upper and lower quartz chamber walls in a flat plate shape, or the upper and lower quartz chamber walls are designed in a dome shape to resist the atmospheric pressure. These quartz outer walls typically have a chamber wall thickness of 6-8mm to resist atmospheric pressure while allowing as much radiant energy as possible to penetrate into the interior of the reaction chamber. The design directions of the two structures are opposite, the technical effects of the two structures cannot coexist, the two structures have advantages and disadvantages on the influence on substrate treatment, the flat cavity can ensure stable distribution of air flow when the air flow flows through the whole cavity, a large number of reinforcing ribs (more than 10) above the flat cavity can shield heated radiation light to cause uneven temperature distribution, the dome-shaped reaction cavity has more uniform temperature distribution, and a large number of chaotic turbulence is generated when the air flow flows into a dome-shaped reaction area, so that the air flow distribution is difficult to regulate. Disclosure of Invention In order to solve the technical problems, the invention aims to provide a semiconductor processing cavity which is used for processing a