CN-116965170-B - Light-emitting device, preparation method thereof, display panel and display device

Abstract

A light emitting device includes a first electrode, an electron transport layer, a quantum dot light emitting layer, and a second electrode. The electron transport layer is disposed on one side of the first electrode. The quantum dot light-emitting layer is arranged on one side of the electron transmission layer far away from the first electrode. The second electrode is arranged on one side of the quantum dot light-emitting layer far away from the first electrode. The light emitting device further includes a plurality of adjustment patterns. The orthographic projections of the plurality of adjustment patterns on the reference surface are distributed at intervals. The reference plane is parallel to the plane of the first electrode. The plurality of adjustment patterns are arranged between the first electrode and the quantum dot light-emitting layer and are in contact with the electron transport layer. At least a portion of the orthographic projection of the electron transport layer on the reference surface is located in the interstitial regions of the orthographic projections of the plurality of adjustment patterns on the reference surface. The plurality of adjustment patterns are configured to block electrons transmitted by the first electrode vector sub-dot light emitting layer, or to form electron traps to trap electrons transmitted by the first electrode vector sub-dot light emitting layer.

Inventors

• LI DONG

Assignees

• 京东方科技集团股份有限公司
• 北京京东方技术开发有限公司

Dates

Publication Date

20260512

Application Date

20220223

Claims (20)

1. 1. A light emitting device, comprising: A first electrode; an electron transport layer disposed on one side of the first electrode; the quantum dot light-emitting layer is arranged on one side of the electron transport layer, which is far away from the first electrode; The second electrode is arranged on one side of the quantum dot luminous layer far away from the first electrode; The light emitting device further comprises a plurality of adjusting patterns, at least part of the orthographic projection of the electron transport layer on the reference surface is positioned in a clearance area of orthographic projection of the adjusting patterns on the reference surface, the first electrode and the electron transport layer are contacted at least in the clearance area, and the electron transport layer and the quantum dot light emitting layer are contacted at least in the clearance area; The plurality of adjustment patterns are configured to block electrons transferred from the first electrode to the quantum dot light emitting layer, or to form electron traps to trap electrons transferred from the first electrode to the quantum dot light emitting layer.
2. 2. The light emitting device of claim 1, wherein the plurality of adjustment patterns comprise an insulating transparent oxide material.
3. 3. The light emitting device of claim 1, wherein the plurality of adjustment patterns comprise a hole transporting transparent oxide material.
4. 4. The light emitting device of claim 3, wherein the plurality of adjustment patterns comprises at least one of an oxide of molybdenum, an oxide of nickel, an oxide of zirconium, and an oxide of vanadium.
5. 5. The light-emitting device of claim 3 or 4, wherein the lowest unoccupied molecular orbital energy level of the hole transporting transparent oxide material is shallower than the lowest unoccupied molecular orbital energy level of the electron transporting layer.
6. 6. The light emitting device of claim 3, further comprising a hole transport layer disposed between the quantum dot light emitting layer and the second electrode, the plurality of adjustment patterns being the same material as the hole transport layer.
7. 7. The light emitting device of claim 1, wherein the plurality of accommodating patterns comprise at least two-dimensional semiconductor layers forming a molar superlattice structure.
8. 8. The light emitting device of claim 7, wherein the at least two-dimensional semiconductor layers comprise a combination of at least two of tungsten disulfide, tungsten diselenide, molybdenum selenide, tungsten sulfide, graphene, boron alkene, boron nitride, and bismuth oxychloride nanoplatelets.
9. 9. The light emitting device of claim 1, wherein the plurality of adjustment patterns are arranged in a plurality of rows and columns; the spaces between any two adjacent rows of adjustment patterns are equal, and/or the spaces between any two adjacent columns of adjustment patterns are equal.
10. 10. The light emitting device of claim 1, wherein a surface of the second electrode remote from the first electrode has a relief topography.
11. 11. The light emitting device of claim 1, wherein the plurality of adjustment patterns are disposed inside the electron transport layer; The electron transport layer comprises a first surface in contact with the first electrode and a second surface in contact with the quantum dot light emitting layer, and spaces are arranged between the plurality of adjusting patterns and the first surface and between the plurality of adjusting patterns and the second surface.
12. 12. The light emitting device of claim 11, wherein the electron transport layer comprises a first electron transport sublayer and a second electron transport sublayer, the first electron transport sublayer being proximate to the first electrode relative to the second electron transport sublayer, the plurality of adjustment patterns being located between the first electron transport sublayer and the second electron transport sublayer, at least a portion of the second electron transport sublayer filling gaps between the plurality of adjustment patterns and being in contact with the first electron transport sublayer.
13. 13. The light emitting device of claim 1, wherein the plurality of adjustment patterns are disposed between the electron transport layer and the quantum dot light emitting layer.
14. 14. The light emitting device of claim 13, wherein the quantum dot light emitting layer is in contact with the electron transport layer through gaps between the plurality of adjustment patterns.
15. 15. The light-emitting device of claim 13 or 14, wherein the number of lattice defects per unit area in a surface of the plurality of adjustment patterns in contact with the quantum dot light-emitting layer is less than the number of lattice defects per unit area in a surface of the electron transport layer in contact with the quantum dot light-emitting layer.
16. 16. The light emitting device of claim 1, wherein the plurality of adjustment patterns are disposed between the first electrode and the electron transport layer, the electron transport layer being in contact with the first electrode through gaps between the plurality of adjustment patterns.
17. 17. The light-emitting device according to claim 1, wherein the electron transport layer is an N-type inorganic semiconductor thin film.
18. 18. The light emitting device of claim 1, wherein the electron transport layer has a surface roughness that is less than a surface roughness of the quantum dot light emitting layer.
19. 19. A method of fabricating a light emitting device, comprising: forming a first electrode on a substrate; forming an electron transport layer on a side of the first electrode away from the substrate, the electron transport layer comprising an N-type inorganic semiconductor material; Forming a quantum dot light-emitting layer on one side of the electron transport layer away from the substrate; forming a second electrode on one side of the quantum dot light-emitting layer away from the substrate; After the first electrode is formed and before the quantum dot light-emitting layer is formed, forming a plurality of adjusting patterns which are distributed at intervals, wherein the adjusting patterns are contacted with the electron transport layer; the electron transport layer is arranged on the substrate, at least part of the orthographic projection of the electron transport layer on the substrate is positioned in a gap area of orthographic projection of the plurality of adjusting patterns on the substrate, the first electrode is contacted with the electron transport layer at least in the gap area, and the electron transport layer is contacted with the quantum dot luminescent layer at least in the gap area.
20. 20. The manufacturing method according to claim 19, wherein the plurality of adjustment patterns are formed before or after the electron transport layer is formed.

Description

Light-emitting device, preparation method thereof, display panel and display device Technical Field The disclosure relates to the technical field of display, in particular to a light emitting device, a preparation method thereof, a display panel and a display device. Background The quantum dot is used as a novel luminescent material, has the advantages of high light color purity, high luminous quantum efficiency, adjustable luminous color, long service life and the like, and becomes a research hot spot of the current novel luminescent material of light-emitting diode (LED for short). Therefore, quantum dot LIGHT EMITTING diodes (QLED) using quantum dot materials as light emitting layers have become a main direction of research of new display devices at present. Disclosure of Invention In one aspect, a light emitting device is provided. The light emitting device includes a first electrode, an electron transport layer, a quantum dot light emitting layer, and a second electrode. The electron transport layer is arranged on one side of the first electrode. The quantum dot light-emitting layer is arranged on one side of the electron transport layer, which is far away from the first electrode. The second electrode is arranged on one side of the quantum dot light-emitting layer, which is far away from the first electrode. The light emitting device further includes a plurality of adjustment patterns. The orthographic projections of the plurality of adjustment patterns on the reference surface are distributed at intervals. The reference plane is parallel to the plane of the first electrode. The plurality of adjustment patterns are disposed between the first electrode and the quantum dot light emitting layer and in contact with the electron transport layer. At least a portion of the orthographic projection of the electron transport layer on the reference plane is located in a gap region of orthographic projection of the plurality of adjustment patterns on the reference plane. The plurality of adjustment patterns are configured to block electrons transferred from the first electrode to the quantum dot light emitting layer, or to form electron traps to trap electrons transferred from the first electrode to the quantum dot light emitting layer. In some embodiments, the plurality of adjustment patterns include an insulating transparent oxide material. In some embodiments, the plurality of adjustment patterns include a hole transporting transparent oxide material. In some embodiments, the plurality of adjustment patterns includes at least one of an oxide of molybdenum, an oxide of nickel, an oxide of zirconium, and an oxide of vanadium. In some embodiments, the lowest unoccupied molecular orbital energy level of the hole transporting transparent oxide material is shallower than the lowest unoccupied molecular orbital energy level of the electron transporting layer. In some embodiments, the light emitting device further includes a hole transport layer disposed between the quantum dot light emitting layer and the second electrode, the plurality of adjustment patterns being the same material as the hole transport layer. In some embodiments, the plurality of accommodating patterns comprises at least two-dimensional semiconductor layers forming a molar superlattice structure. In some embodiments, the at least two-dimensional semiconductor layers include a combination of at least two of tungsten disulfide, tungsten diselenide, molybdenum selenide, tungsten sulfide, graphene, boron alkene, boron nitride, and bismuth oxychloride nanoplatelets. In some embodiments, the plurality of adjustment patterns are arranged in a plurality of rows and columns. The spaces between any two adjacent rows of adjustment patterns are equal, and/or the spaces between any two adjacent columns of adjustment patterns are equal. In some embodiments, a surface of the second electrode remote from the first electrode has a topography that is undulating. In some embodiments, the plurality of adjustment patterns are disposed inside the electron transport layer. The electron transport layer includes a first surface in contact with the first electrode, and a second surface in contact with the quantum dot light emitting layer. The plurality of adjustment patterns and the first surface, and the plurality of adjustment patterns and the second surface have a space therebetween. In some embodiments, the electron transport layer comprises a first electron transport sublayer and a second electron transport sublayer, the first electron transport sublayer being in proximity to the first electrode relative to the second electron transport sublayer. The plurality of adjustment patterns are located between the first electron transport sublayer and the second electron transport sublayer, at least part of the second electron transport sublayer filling gaps between the plurality of adjustment patterns and being in contact with the first electron transport sublayer. In some em