CN-117176263-B - Active on-chip double-conversion single-circuit P-band signal transmission method

CN117176263BCN 117176263 BCN117176263 BCN 117176263BCN-117176263-B

Abstract

The invention discloses an active on-chip double-conversion single-circuit P-band signal transmission method which comprises the steps of obtaining P-band signal transmission state data, obtaining bias voltage data, combining P-band signal transmission common-mode noise, even harmonic and static leakage data to generate different bias voltage measurement and bias voltage dividing resistance bias influence optimization results, obtaining P-band signal unit time signal loss values, combining P-band signal transmission common-mode noise, even harmonic and static leakage data, conducting power voltage and bias voltage dividing resistance bias influence optimization on different P-band signal unit time signal loss calculation models, generating different P-band signal unit time signal loss calculation model power voltage and bias voltage dividing resistance bias influence optimization results, conducting circuit adjustment control on the combination of different P-band signal unit time signal loss calculation model power voltage and bias voltage dividing resistance bias influence optimization results, and solving the technical problem that transmission efficiency of P-band signals is low.

Inventors

ZHANG MENG
CHEN ZIRAN
YU GUANLONG
PU CHAO

Assignees

航天科工通信技术研究院有限责任公司

Dates

Publication Date: 20260512
Application Date: 20230822

Claims (7)

1. The active on-chip double-conversion single-circuit P-band signal transmission method is characterized by comprising the steps of obtaining P-band signal transmission state data through a local oscillator single-conversion double-amplifier, wherein the P-band signal transmission state data comprises P-band signal transmission common-mode noise, even harmonic and electrostatic leakage data; transmitting common mode noise, even harmonic and static leakage data by utilizing the bias voltage data and the P-band signals, and optimizing the bias influences of power supply voltages and voltage dividing resistance values on different bias voltages to generate bias influence optimizing results of different bias voltage metering and voltage dividing resistance values; The power supply voltage and the bias voltage resistance bias influence optimization result of the signal loss calculation model in unit time of different P wave band signals are generated by utilizing the signal loss value in unit time of the P wave band signals and the P wave band signal transmission common mode noise, even harmonic wave and static leakage data; and carrying out circuit adjustment control according to the measurement of different bias voltages, the bias influence optimization result of the voltage dividing resistance value and the signal loss calculation model power supply voltage of the different P-band signals in unit time and the bias influence optimization result of the voltage dividing resistance value.
2. The method for transmitting P-band signals of an active on-chip double-conversion single circuit according to claim 1, wherein the method for optimizing the bias effect of power supply voltage and voltage dividing resistance values on different bias voltages by using the bias voltage data and the P-band signals to transmit common mode noise, even harmonic and electrostatic leakage data, and generating the bias effect optimizing results of different bias voltage metering and voltage dividing resistance values comprises the following steps: Dividing the radio frequency according to the bias voltage data to obtain different negative temperature slopes, wherein the different negative temperature slopes correspond to the bias voltage data; Carrying out transmission progress analysis on the P-band signal transmission common mode noise, even harmonic and electrostatic leakage data according to the different negative temperature slopes to obtain P-band signal transmission common mode noise, even harmonic and electrostatic leakage transmission progress results; And carrying out bias influence optimization on power supply voltage and voltage dividing resistance values of different bias voltages according to the P-band signal distribution areas with different transmission efficiency, and generating bias influence optimization results of different bias voltage metering and voltage dividing resistance values.
3. The method for transmitting the P-band signal of the active on-chip double-conversion single circuit according to claim 2, wherein the optimizing the power supply voltage and the bias resistor value bias influence of the different bias voltages according to the P-band signal distribution areas with different transmission efficiency, and generating the optimizing result of the bias voltage metering and the bias resistor value bias influence of the different bias voltages comprises the following steps: Acquiring different P wave band signal interval data according to the P wave band signal distribution areas with different transmission efficiency and the bias voltage data; inputting the signal interval data of different P wave bands into the frequency band required by the resonance unit time of the radio frequency parasitic capacitance to obtain different radio frequency parasitic capacitance resonance change values, and carrying out bias influence optimization on the power supply voltage and the voltage dividing resistance value according to the different radio frequency parasitic capacitance resonance change values and the radio frequency parasitic capacitance resonance optimal interval values to generate bias influence optimization results of the different bias voltage metering and the voltage dividing resistance value.
4. The method for transmitting the P-band signal of the active on-chip double-conversion single circuit according to claim 1, wherein the power supply voltage and voltage dividing resistance bias influence optimization is performed on the signal loss calculation models of the different P-band signals in unit time by using the signal loss value of the P-band signals in unit time and the P-band signal transmission common mode noise, even harmonic and static leakage data, and the power supply voltage and voltage dividing resistance bias influence optimization results of the signal loss calculation models of the different P-band signals in unit time are generated, and the method comprises the following steps: according to the different negative temperature slopes, carrying out transmission progress analysis on the P-band signal transmission common mode noise, even harmonic and electrostatic leakage data, and obtaining P-band signal transmission progress results with different negative temperature slope transmission efficiency; And according to the transmission progress results of the P-band signals with different negative temperature slope transmission efficiency, carrying out bias influence optimization on the power supply voltage and the voltage dividing resistance value of the signal loss calculation models in unit time of the different P-band signals, and generating the bias influence optimization results of the power supply voltage and the voltage dividing resistance value of the signal loss calculation models in unit time of the different P-band signals.
5. The method for transmitting the P-band signal of the active on-chip dual-conversion single circuit of claim 4, wherein the optimizing the power supply voltage and the bias voltage resistance bias effect of the signal loss calculation model of the different P-band signals per unit time according to the P-band signal transmission progress results of different negative temperature slope transmission efficiency, and the generating the optimizing result of the power supply voltage and the bias voltage resistance bias effect of the signal loss calculation model of the different P-band signals per unit time comprises: the method comprises the steps of obtaining signal loss power supply voltage and voltage dividing resistance value of a P-band signal in unit time, wherein the signal loss power supply voltage and the voltage dividing resistance value of the P-band signal in unit time comprise output impedance magnitude calculation signals; and counting the signal loss calculation models of the P-band signals in unit time according to the different preset output impedance values, and generating power supply voltage and bias voltage dividing resistance value bias influence optimization results of the signal loss calculation models of the different P-band signals in unit time.
6. The method for transmitting an active on-chip dual conversion single circuit P-band signal according to claim 1, further comprising: When circuit adjustment control fails through the measurement of different bias voltages, the bias influence optimization result of the voltage dividing resistance values and the signal loss calculation model power supply voltage of the different P-band signals in unit time and the bias influence optimization result of the voltage dividing resistance values, a control failure bias voltage and a control failure P-band signal in unit time signal loss calculation model are obtained; re-calculating the control failure bias voltage and the control failure P-band signal unit time signal loss calculation model; and when the recalculation fails, generating a variable frequency transmission abnormal signal, and transmitting the variable frequency transmission abnormal signal to a variable frequency terminal.
7. The method for active on-chip dual conversion single circuit P-band signal transmission of claim 6, further comprising: When the recalculation fails, a variable frequency negative temperature slope is obtained according to the control failure bias voltage and the control failure P-band signal unit time signal loss calculation model, and the voltage dividing resistance change prompt is carried out on the P-band signal with the transmission efficiency according to the variable frequency negative temperature slope.

Description

Active on-chip double-conversion single-circuit P-band signal transmission method Technical Field The invention relates to the field of P-band signal transmission of circuits, in particular to a P-band signal transmission method of an active on-chip double-conversion single circuit. Background As an important direction for the miniaturization development of the phased array radar and military communication transceiving methods, the development of the design of radio frequency chips from the system level downwards becomes a necessary requirement. The architecture based on microsystem technology is determined by taking electronic chip and radio frequency integration as directions. The modularized multifunctional chip with downward system index design is combined, and index redundancy distribution and performance redundancy design in module integration constructed by discrete devices and single functional chips as modules can be avoided, so that the system advantage is exerted to the greatest extent on the chip level, the integration difficulty is reduced, and effective support is provided for a communication-radar-electronic warfare integrated comprehensive radio frequency system. CMOS processes have received much attention in the field of radio frequency chips due to their high integration with digital circuits, relatively low cost after mass production. The P wave band can be directly used as the radio frequency on the one hand, and can also be used as the intermediate frequency of the high-frequency superheterodyne transceiver on the other hand, the requirement on the P wave band radio frequency transceiver chip in practical system application is larger, and the P wave band radio frequency transceiver chip has certain universality, so that the research on the P wave band radio frequency transceiver chip has wide application prospect and higher research value. The quality of the P-band signal transmission mode has a direct relation with the generation of the P-band signal. However, the regulation and control of the transmission environment still mainly depends on the experience of the staff, and such a manner can cause inaccuracy to regulate and control the transmission environment of the P-band signal, and affect the transmission of the P-band signal. And along with the transmission environment data required by the transmission of the P-band signals, the transmission period of crops cannot be accurately mastered by the existing environment regulation and control mode according to experience, and further the problem of hysteresis in the regulation and control of the transmission environment of the crops is solved. Therefore, a more intelligent and scientific way is needed to transmit the P-band signal, so as to improve the P-band signal transmission efficiency. Disclosure of Invention The application provides a method for transmitting P-band signals of an active on-chip double-conversion single circuit, which aims to solve the technical problem of low transmission efficiency of power supply voltage and voltage dividing resistance values of P-band signals in the prior art. In view of the above problems, the embodiment of the application provides a method for transmitting a P-band signal of an active on-chip dual-conversion single circuit. The application discloses an initial aspect of an active in-chip double-conversion single-circuit P-band signal transmission method, which comprises the steps of obtaining P-band signal transmission state data through a local oscillation single-conversion double-amplifier when a preset transmission node is met, wherein the P-band signal transmission state data comprise P-band signal transmission common mode noise, even harmonic and static leakage data, obtaining bias voltage data, carrying out bias influence optimization on power supply voltages and voltage dividing resistance values on different bias voltages by utilizing the bias voltage data and the P-band signal transmission common mode noise, even harmonic and static leakage data, generating bias influence optimization results of different bias voltage measurement and voltage dividing resistance values, obtaining signal loss values of P-band signal unit time, carrying out bias influence optimization on the power supply voltages and the voltage dividing resistance values by utilizing the P-band signal unit time signal loss calculation model, and the P-band signal transmission common mode noise, even harmonic and static leakage data, generating bias calculation model voltages and voltage dividing resistance value bias influence optimization results of different P-band signal unit time, and carrying out bias effect optimization result control on the bias voltage measurement and voltage dividing resistance value bias optimization results of different P-band signal unit time. The application discloses another aspect of the active on-chip double-conversion single-circuit P-band signal transmission method, wherein the method