CN-117263937-B - PDI free radical derivative and graphene spin field effect transistor

CN117263937BCN 117263937 BCN117263937 BCN 117263937BCN-117263937-B

Abstract

The invention relates to the technical field of molecular electronic devices, in particular to a PDI free radical derivative and a graphene spin field effect transistor. The PDI radical derivative includes the following structural formula: wherein when R 2 and R 3 are (CH 2 ) n NH 2 ), R 1 is R 4 is H or Wherein n is 3, 4, 5 or 6, R 2 is when R 1 and R 4 are (CH 2 ) n NH 2 ) R 3 is H or Wherein n is 3,4, 5 or 6. The PDI free radical derivative has stable free radicals, so that the PDI free radical derivative has unique conductivity, magnetic property and nonlinear optical property, and can generate stable spin current when being matched with a magnetic electrode and a graphene point electrode pair in a graphene spin field effect transistor, so that the graphene spin field effect transistor has strong stability, high reliability and excellent performance.

Inventors

GUO XUEFENG
QI ZIYUAN
LI GUANGWU
WANG BOYU
ZHAO CONG
JIA CHUANCHENG

Assignees

南开大学

Dates

Publication Date: 20260512
Application Date: 20231020

Claims (8)

1. A PDI radical derivative, wherein the PDI radical derivative has the structural formula: R 1 and R 4 are (CH 2 ) n NH 2 ,R 2 is R 3 is H, wherein n is 3,4, 5 or 6.
2. The PDI radical derivative according to claim 1, wherein the PDI radical derivative has a structural formula represented by formula (1): (1)。
3. a graphene spin field effect transistor, comprising: A silicon substrate; the gate dielectric layer is arranged on one surface of the silicon substrate; a graphene dot electrode pair, wherein the graphene dot electrode pair is arranged on the surface of the gate dielectric layer far away from the silicon substrate, The gold electrode and the magnetic electrode are positioned on one side of the gate dielectric layer far away from the silicon substrate, and are oppositely arranged; One electrode of the graphene point electrode pair is electrically connected with the gold electrode, and the other electrode of the graphene point electrode pair is electrically connected with the magnetic electrode; The method further comprises the step of connecting the PDI free radical derivative as claimed in claim 1 or 2 with two electrodes arranged in the graphene dot electrode pair at intervals.
4. The graphene spin field effect transistor according to claim 3, wherein the magnetic electrode comprises at least one of iron, cobalt and nickel; The gold electrode comprises a chromium layer and a gold layer, wherein the chromium layer is arranged on the surface, far away from the silicon substrate, of the gate dielectric layer, and the gold layer is arranged on the surface, far away from the silicon substrate, of the chromium layer.
5. The graphene spin field effect transistor according to claim 4, further comprising a protective layer disposed on a side of the graphene dot electrode pair remote from the silicon substrate and covering the gold electrode, the magnetic electrode, and the graphene dot electrode pair.
6. A method of fabricating a graphene spin field effect transistor according to claim 3, comprising: s1, a gate dielectric layer is arranged on one surface of a silicon substrate; s2, arranging a gold electrode and a magnetic electrode on one side, far away from the silicon substrate, of the gate dielectric layer, and enabling the gold electrode and the magnetic electrode to be arranged oppositely; S3, arranging a graphene point electrode pair on the surface of the gate dielectric layer, which is far away from the silicon substrate, and enabling one electrode of the graphene point electrode pair to be electrically connected with the gold electrode and the other electrode of the graphene point electrode pair to be electrically connected with the magnetic electrode, so as to obtain a silicon wafer containing the graphene point electrode pair; And S4, connecting a PDI free radical derivative between two electrodes arranged in the graphene point electrode pair at intervals to obtain the graphene spin field effect transistor.
7. The method for preparing a graphene spin field effect transistor according to claim 6, wherein the method for preparing a PDI radical derivative comprises: 1, 8-naphthalimide and 3-bromo-1, 8-naphthalimide are dissolved in diethylene glycol dimethyl ether, and react under the combined catalysis of 2,5 dichloro-cyanobenzene and potassium tert-butoxide at 120-140 ℃ to obtain a first compound; Dissolving the first compound and 3-bromopropanol in N, N-dimethylformamide, and reacting under the combined catalysis of potassium carbonate and potassium iodide at 110-130 ℃ to obtain a second compound; Dissolving the second compound and 2, 5-tertiary butyl-3-boron dihydroxy-phenol in toluene, and reacting under the combined catalysis of tetra (triphenylphosphine) palladium and sodium carbonate at 110-130 ℃ to obtain a third compound; Dissolving the third compound in tetrahydrofuran, and reacting under the combined catalysis of cesium carbonate, palladium acetate and 1,1 '-binaphthyl-2, 2' -bisdiphenylphosphine at 80-100 ℃ to obtain a fourth compound; And dissolving the fourth compound in diethyl ether, and reacting at normal temperature under the combined catalysis of potassium hexacyanoferrate and sodium hydroxide to obtain the PDI free radical derivative.
8. The method for manufacturing a graphene spin field effect transistor according to any one of claims 6 to 7, wherein step S4 includes: mixing the silicon wafer containing the graphene dot electrode pairs with a sufficient amount of 1- (3-dimethylaminopropyl) -3-2-ethylcarbodiimide hydrochloride and a PDI free radical derivative to obtain a mixed system; placing the mixed system in a nitrogen atmosphere, injecting anhydrous pyridine into the mixed system, and standing; Washing and drying the silicon wafer containing the graphene point electrode pairs to obtain the graphene spin field effect transistor; And/or, the preparation method further comprises: And arranging a protective layer on one side of the graphene point electrode pair, which is far away from the silicon substrate, so that the gold electrode, the magnetic electrode and the graphene point electrode pair are covered by the protective layer.

Description

PDI free radical derivative and graphene spin field effect transistor Technical Field The invention relates to the technical field of molecular electronic devices, in particular to a PDI free radical derivative and a graphene spin field effect transistor. Background With the rapid development of information technology, the demands of the society on chip performance are higher and higher, and the importance of miniaturized components is further reflected. While conventional electronic device dimensions have approached physical limits, semiconductor process developments have required exploration of new mechanisms to further advance device miniaturization. The single-molecule electronic device is beneficial to realizing the miniaturization of the device. At present, research on single-molecule electronic devices is mainly focused on spin research of single-molecule electronic devices, while spin research based on single-molecule electronic devices is mainly focused on single-molecule magnets based on magnetic metal complexes, and single-molecule electronic devices obtained based on the above research have poor performance. Disclosure of Invention The present invention is directed to solving at least one of the technical problems existing in the related art. Therefore, the invention provides the PDI free radical derivative, which has stable free radicals, so that the PDI free radical derivative has unique conductivity, magnetic property and nonlinear optical property, and can generate stable spin current when being matched with a magnetic electrode and a graphene point electrode pair in the graphene spin field effect transistor, so that the graphene spin field effect transistor has strong stability, high reliability and excellent performance. In one aspect of the invention, the invention provides a PDI radical derivative comprising the following structural formula: wherein when R 2 and R 3 are (CH 2)nNH2), R 1 is R 4 is H orWherein n is 3,4, 5 or 6; When R 1 and R 4 are (CH 2)nNH2), R 2 is R 3 is H orWherein n is 3,4, 5 or 6. Further, the PDI radical derivative includes at least one of structural formulas shown as formula (1) to formula (4): (1)、(2)、 (3) And (4)。 In another aspect of the present invention, there is provided a graphene spin field effect transistor comprising: A silicon substrate; the gate dielectric layer is arranged on one surface of the silicon substrate; The gold electrode and the magnetic electrode are positioned on one side of the gate dielectric layer far away from the silicon substrate, and are oppositely arranged; The graphene point electrode pair is arranged on the surface, far away from the silicon substrate, of the gate dielectric layer, one electrode of the graphene point electrode pair is electrically connected with the gold electrode, and the other electrode of the graphene point electrode pair is electrically connected with the magnetic electrode; the graphene dot electrode pair further comprises the PDI free radical derivative, wherein the PDI free radical derivative is connected with two electrodes which are arranged in the graphene dot electrode pair at intervals. Further, the magnetic electrode includes at least one of iron, cobalt, and nickel; The gold electrode comprises a chromium layer and a gold layer, wherein the chromium layer is arranged on the surface, far away from the silicon substrate, of the gate dielectric layer, and the gold layer is arranged on the surface, far away from the silicon substrate, of the chromium layer. Further, the graphene spin field effect transistor further comprises a protection layer, wherein the protection layer is arranged on one side, far away from the silicon substrate, of the graphene point electrode pair and covers the gold electrode, the magnetic electrode and the graphene point electrode pair. In another aspect of the present invention, there is provided a method of preparing a graphene spin field effect transistor as described above, the method comprising: s1, a gate dielectric layer is arranged on one surface of a silicon substrate; s2, arranging a gold electrode and a magnetic electrode on one side, far away from the silicon substrate, of the gate dielectric layer, and enabling the gold electrode and the magnetic electrode to be arranged oppositely; S3, arranging a graphene point electrode pair on the surface of the gate dielectric layer, which is far away from the silicon substrate, and enabling one electrode of the graphene point electrode pair to be electrically connected with the gold electrode and the other electrode of the graphene point electrode pair to be electrically connected with the magnetic electrode, so as to obtain a silicon wafer containing the graphene point electrode pair; And S4, connecting a PDI free radical derivative between two electrodes arranged in the graphene point electrode pair at intervals to obtain the graphene spin field effect transistor. Further, the preparation method of the PDI free radical deri