CN-117265506-B - Method of area selective deposition

CN117265506BCN 117265506 BCN117265506 BCN 117265506BCN-117265506-B

Abstract

The application belongs to the technical field of semiconductors, and provides a method for region selective deposition, which comprises the steps of obtaining a semiconductor substrate; and constructing a liquid sealing layer at one side end of the mask plate, placing one end with the liquid sealing layer on the semiconductor substrate, and depositing a specified material to the liquid sealing mask plate. According to the application, the liquid sealing layer is filled in the gap between the substrate and the mask plate, so that the problem that the atomic layer is deposited in an unwanted area to grow is prevented, and all gaps between the mask plate and the substrate are effectively filled until the molecular level is reached, so that the effect of sealing the gap between the substrate and the mask plate is realized, and the technical problem that the atomic layer is deposited in the unwanted area to grow is solved.

Inventors

YU YANHAO
WANG HAOCHUAN
LI CHUN

Assignees

南方科技大学

Dates

Publication Date: 20260512
Application Date: 20230907

Claims (8)

1. A method of area selective deposition comprising: acquiring a semiconductor substrate; Constructing a liquid sealing layer at one side end of a mask plate, and placing one end with the liquid sealing layer on the semiconductor substrate to form a liquid sealing mask plate; depositing a specified material to the liquid seal mask plate; the liquid sealing layer comprises long straight-chain alkane oil or perfluoropolyether obtained by crude oil fractionation and/or dearomatization, and the number of carbon atoms of the long straight-chain alkane oil is more than or equal to six and less than sixteen.
2. The method of area selective deposition of claim 1, wherein a thickness of the liquid seal layer is not less than a maximum gap value between the mask plate and the semiconductor substrate.
3. The method of region selective deposition of claim 1 or 2, wherein the obtaining a semiconductor substrate employs a hydrophilic hydroxylation treatment, the step of hydrophilic hydroxylation treatment comprising: a semiconductor substrate cleaned by plasma processing gas; the plasma treatment gas adopts argon-oxygen mixed gas, the excitation frequency is 13-15 MHz, and the treatment time is 3-5 min.
4. The method of area selective deposition of claim 3, wherein the step of depositing a specified material onto the liquid seal mask plate comprises: Placing the liquid seal mask plate and the semiconductor substrate in a cavity of an atomic layer deposition device; Sequentially delivering a first precursor gas and a second precursor gas into the chamber, wherein the first precursor gas comprises water and a hydrophilic reactant, and the second precursor gas comprises water and a hydrophilic reactant; Purging inert gas into the chamber; and returning the steps of sequentially conveying the first precursor gas and the second precursor gas into the cavity until a specified material film with preset thickness is obtained, wherein the film at least comprises metal oxide, metal nitride and an organic film.
5. The method of claim 4, wherein the depositing is atomic layer deposition, magnetron sputtering deposition, physical vapor deposition, or chemical vapor deposition.
6. The method of claim 4 or 5, wherein after the step of depositing a specified material onto the wet seal mask, further comprising, And ultrasonically cleaning and soaking the deposited liquid seal mask plate and the semiconductor substrate in a perfluorohexane solution to obtain the substrate with the atomic layer deposition film patterning.
7. The method of claim 6, wherein the constructing a liquid seal layer is by knife coating or spin coating.
8. The method of claim 4, 5 or 7, wherein prior to the step of hydrophilizing the semiconductor substrate, further comprising cleaning the semiconductor substrate and the mask plate separately in different solutions.

Description

Method of area selective deposition Technical Field The application belongs to the technical field of semiconductors, and particularly relates to a method for region selective deposition. Background The shrinking of integrated circuits in semiconductor technology is now almost entirely dependent on top-down processing, which is characterized by a complex combination of many material deposition, extreme ultraviolet light and etching steps. There are many methods for preparing nano-materials, such as atomic layer deposition, chemical vapor deposition, and physical vapor deposition, but when deposition is performed, the long-term weakness of boundary blurring is caused due to the gap between the mask plate and the substrate, so that the deposited specified material grows in an unwanted area. Current approaches to solving the gap problem have focused mainly on applying force to the mask surface by mechanical or magnetic means to reduce the gap space. These methods have improved to some extent, but have not been able to reduce the gap to the molecular level. Therefore, development of a masking method capable of effectively improving the barrier performance of a mask plate and being convenient and suitable for most scenes has very important practical significance. Disclosure of Invention The embodiment of the application provides a method for region selective deposition, which aims to solve the technical problem that atomic layer deposition grows in an unwanted region. The embodiment of the application provides a method for carrying out region selective deposition, which comprises the steps of carrying out hydrophilic hydroxylation treatment on a semiconductor substrate, constructing a liquid sealing layer at one side end of a mask plate, placing one end with the liquid sealing layer on the semiconductor substrate to form a liquid sealing mask plate, and depositing a specified material on the liquid sealing mask plate. In one possible implementation, the liquid seal layer includes long linear alkane oil obtained by crude oil fractionation and/or dearomatization, and the number of carbon atoms of the long linear alkane oil is greater than or equal to six. In one possible implementation, the long linear alkane oil is a perfluoropolyether. In one possible implementation, the thickness of the liquid sealing layer is not less than a maximum gap value between the mask plate and the semiconductor substrate. In one possible implementation, the hydrophilic hydroxylation treatment comprises a semiconductor substrate cleaned by plasma treatment gas, wherein the plasma treatment gas adopts argon-oxygen mixed gas, the excitation frequency is 13-15MHz, and the treatment time is 3-5min. In one possible implementation, the step of depositing the specified material into the liquid seal mask plate comprises the steps of placing the liquid seal mask plate and the semiconductor substrate in a cavity of an atomic layer deposition device, sequentially conveying a first precursor gas and a second precursor gas into the cavity, wherein the first precursor gas comprises water and a hydrophilic reactant, the second precursor gas comprises water and a hydrophilic reactant, purging inert gas into the cavity, and returning the first precursor gas and the second precursor gas to sequentially convey into the cavity until a specified material film with a preset thickness is obtained, and the film at least comprises metal oxide, metal nitride and an organic film. In one possible implementation, the deposition includes atomic layer deposition, magnetron sputter deposition, physical vapor deposition, or chemical vapor deposition. In one possible implementation manner, after the specified material is deposited on the liquid seal mask, ultrasonic cleaning and soaking the deposited liquid seal mask and the semiconductor substrate in a perfluorohexane solution are further included, so that the substrate with the atomic layer deposition film patterning is obtained. In one possible implementation, the liquid seal layer is constructed by knife coating or spin coating. In one possible implementation, the hydrophilic hydroxylation treatment of the semiconductor substrate further includes cleaning the semiconductor substrate and the mask plate in different solutions, respectively. Compared with the prior art, the embodiment of the application has the beneficial effects that the liquid sealing layer is filled in the gap between the substrate and the mask plate, so that the problem that the atomic layer is deposited in an unwanted area to grow is prevented, all gaps between the mask plate and the substrate are effectively filled until the molecular level is reached, and the effect of sealing the gap between the substrate and the mask plate is realized. Drawings In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are needed in the embodiments or the description of the prior art will be br