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CN-117344279-B - Magnetic control system for preparing large-area film

CN117344279BCN 117344279 BCN117344279 BCN 117344279BCN-117344279-B

Abstract

The invention belongs to the technical field related to magnetron sputtering film deposition, and discloses a magnetron system for preparing a large-area film. The magnetron system comprises a deposition substrate and a movable target, wherein the deposition substrate and the movable target are oppositely arranged, the movable target comprises a target material, a gas supply ring and a dynamic magnet, the target material is connected with an electric field cathode to enable the target material to serve as a cathode material of magnetron sputtering, the gas supply ring is used for supplying reaction gas to the periphery of the target material, the dynamic magnet is arranged in the movable target and used for providing a magnetic field with an adjustable magnetic field range around the target material, when the center of the movable target and the circle center of the deposition substrate are on the same horizontal line, the magnetic field range is minimum, the area of a deposition spot formed on the deposition substrate is minimum, and when the movable target moves away from the circle center of the deposition substrate along the radial direction of the deposition substrate, the magnetic field range is gradually increased, and the area of the deposition spot formed on the deposition substrate is gradually increased. The invention solves the problem that the deposition uniformity of the preparation of the large-area film is difficult to regulate and control in the prior art.

Inventors

  • FANG HAISHENG
  • An Qiaoru
  • LI JIE

Assignees

  • 华中科技大学

Dates

Publication Date
20260505
Application Date
20231031

Claims (7)

  1. 1. A magnetron system for large area thin film production, characterized in that the magnetron system comprises a deposition substrate (10) and a moving target (100), wherein, The deposition substrate (10) is arranged opposite to the movable target (100), the deposition substrate (10) can rotate around the center of the deposition substrate, the movable target (100) comprises a target (140), a gas supply ring (110) and a dynamic magnet, the target (140) is arranged at the top end of the movable target (100), the target (140) is connected with an electric field cathode, so that the target (140) is used as a cathode target (140) for magnetron sputtering, the gas supply ring (110) is used for supplying reaction gas to the periphery of the target (140), and the dynamic magnet is arranged in the movable target (100) and is used for supplying a magnetic field with an adjustable magnetic field range around the target (140); the magnetic field range is minimum when the center of the moving target (100) and the center of the deposition substrate (10) are on the same horizontal line, the area of deposition spots formed on the deposition substrate (10) is minimum, and the magnetic field range is gradually increased when the moving target (100) moves away from the center of the deposition substrate (10) along the radial direction of the deposition substrate (10), and the area of deposition spots formed on the deposition substrate (10) is gradually increased; in the magnetron sputtering deposition process, the rotation of the deposition substrate (10) and the movement of the moving target (100) enable the deposition spots to completely scan the surface of the deposition substrate (10), and the rotation speed and the movement speed are adjusted to control the position and the deposition time length of the deposition spots so as to realize uniform deposition of a large-area film; The dynamic magnet expands outwards along with the contraction of the position of the moving target, the outer magnet contracts when the moving target is coaxial with the substrate, and expands gradually along the radial direction of the substrate, so that the area of the deposition spot expands towards the edge direction of the substrate, the deposition spot adapts to the thin film deposition of a circular substrate, and the uniformity of large-area film plating can be remarkably improved; The dynamic magnet comprises an inner magnet (130) and an outer magnet (120), the inner magnet (130) is fixed at the center of the moving target (100), and the outer magnet (120) moves gradually away from the inner magnet (130) along the radial direction of the deposition substrate (10) along with the moving target (100) and away from the center of the deposition substrate (10), so that the magnetic field range is gradually increased; The magnetic pole directions of the inner magnet (130) and the outer magnet (120) are opposite, when the magnetic field range is contracted, the distance between the inner magnet (130) and the outer magnet (120) is reduced, and when the magnetic field range is expanded, the distance between the inner magnet (130) and the outer magnet (120) is increased; The outer magnets (120) are distributed in a circular ring, the inner magnets (130) are arranged at the center of the outer magnets (120), when the magnetic field range is contracted, the outer magnets (120) move along the radial direction of the circular ring towards the direction close to the inner magnets (130), and when the magnetic field range is expanded, the outer magnets (120) move along the radial direction of the circular ring towards the direction far away from the inner magnets (130).
  2. 2. A magnetron system for large area thin film production as claimed in claim 1 wherein the dynamic magnet comprises a plurality of bar magnets arranged in parallel, the outer magnet (120) moving in parallel in a direction approaching the inner magnet (130) when the magnetic field range is contracted, and the outer magnet (120) moving in parallel in a direction away from the inner magnet (130) when the magnetic field range is expanded.
  3. 3. A magnetron system for large area thin film production as claimed in claim 1 or 2 wherein the gas supply ring (110) is sleeved outside the moving target (100) and the reaction gas flows out of the gas supply ring (110).
  4. 4. A magnetron system for large area thin film production as claimed in claim 3 wherein the gas supply ring (110) and the moving target (100) are coaxial.
  5. 5. A magnetron system for large area thin film production as claimed in claim 1 or 2 wherein the reactive gas is one or more of argon or a gas required for a magnetron sputtering reaction.
  6. 6. A magnetron system for large area thin film production as claimed in claim 1 wherein the diameter of the deposition substrate (10) is larger than the diameter of the moving target (100).
  7. 7. A magnetron system for large area thin film production as claimed in claim 1 wherein the deposition substrate (10) and the moving target (100) are disposed in a vacuum chamber.

Description

Magnetic control system for preparing large-area film Technical Field The invention belongs to the technical field related to magnetron sputtering film deposition, and particularly relates to a magnetron system for preparing a large-area film. Background The magnetron sputtering is a metal and compound film deposition technology, and the film prepared by the technology has high uniformity and high compactness, so that the film is widely applied to the fields of integrated circuits, wear-resistant and corrosion-resistant coatings, optical coatings, large-area coatings of building glass, photovoltaic solar cells and the like, and realizes low-cost large-scale industrial production. The magnetron sputtering process is carried out in a high vacuum environment, the cathode target is bombarded by high-energy argon ions generated in glow discharge plasma, a large number of target particles are sputtered, and finally target metal is deposited on the surface of the substrate to form a film layer. Compared with film deposition techniques such as chemical vapor deposition, multi-arc ion plating and the like, the magnetron sputtering has the advantages of high speed, low temperature and low damage. With the development of the industries such as semiconductors, the preparation of a large-area and high-quality film layer becomes the foundation for the development of next-generation electronic and photoelectric devices, and the magnetron sputtering technology for plating a large-area uniform film becomes the key of the technical development. The large-area film is generally formed by compounding a plurality of elements, can be prepared into materials with the characteristics of high temperature resistance, corrosion resistance, oxidation resistance, high hardness and the like according to requirements, and can be applied to the aspects of high-quality organic semiconductor films, high-speed aircraft thermal protection coatings, solar cell light absorption layers and the like. The key point of large-area film preparation is to maintain the uniformity of film deposition in a large range, however, the sizes of a substrate table and a target table in the traditional magnetron sputtering are limited, the prior improved technology comprises the simultaneous increase of the substrate table and the target table, the increase and the movement of the substrate table and the like, and the problems of huge equipment volume, low production efficiency, difficult guarantee of film coating uniformity and the like exist in the methods, and the complexity of a system and the low quality of the film layer limit the industrial application of the method. Therefore, how to design a magnetron system and a sputtering method capable of uniformly preparing a large-area film is a problem to be solved by those skilled in the art. Disclosure of Invention Aiming at the defects or improvement demands of the prior art, the invention provides a magnetic control system for preparing a large-area film, which solves the problem that the deposition uniformity of the preparation of the large-area film is difficult to regulate and control in the prior art. In order to achieve the above object, according to the present invention, there is provided a magnetron system for large-area thin film production, the magnetron system comprising a deposition substrate and a moving target, wherein, The deposition substrate and the movable target are oppositely arranged, the deposition substrate can rotate around the center of the deposition substrate, the movable target comprises a target material, a gas supply ring and a dynamic magnet, the target material is arranged at the top end of the movable target, the target material is connected with an electric field cathode to enable the target material to serve as a cathode target material of magnetron sputtering, the gas supply ring is used for supplying reaction gas to the periphery of the target material, and the dynamic magnet is arranged in the movable target and is used for providing a magnetic field with an adjustable magnetic field range around the target material; when the center of the moving target and the center of the deposition substrate are on the same horizontal line, the magnetic field range is minimum, the area of the deposition spot formed on the deposition substrate is minimum, and when the moving target moves away from the center of the deposition substrate along the radial direction of the deposition substrate, the magnetic field range is gradually increased, and the area of the deposition spot formed on the deposition substrate is gradually increased; In the magnetron sputtering deposition process, the rotation of the deposition substrate and the movement of the moving target enable the deposition spots to completely scan the surface of the deposition substrate, and the rotation speed and the movement speed are regulated to control the position and the deposition time length of the deposition spots, so th