CN-117396025-B - Silicon-based OLED transverse turbulence partition structure and manufacturing method thereof

CN117396025BCN 117396025 BCN117396025 BCN 117396025BCN-117396025-B

Abstract

The invention belongs to a silicon-based OLED transverse turbulence partition structure in the technical field of silicon-based OLEDs, and further relates to a manufacturing method of the silicon-based OLED transverse turbulence partition structure. Coating a film on a CMOS substrate (2) to form an anode pattern, coating an inorganic material layer on the anode pattern to form a flattened inorganic material film layer (4), evaporating the inorganic material layer on the flattened inorganic material film layer (4) to form a laminate to form an Under cut structure, evaporating an organic light-emitting layer (3) after the Under cut structure is formed, separating the organic light-emitting layer (3) by the Under cut structure, and finally evaporating to form a cathode layer (8). The silicon-based OLED transverse turbulence partition structure and the manufacturing method thereof have simple structure and steps, solve the problem that the display effect is affected due to the fact that adjacent display units are stolen and lightened due to the current interference phenomenon between the light-emitting units, and improve the display effect.

Inventors

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Assignees

安徽熙泰智能科技有限公司

Dates

Publication Date: 20260508
Application Date: 20230606

Claims (10)

1. A manufacturing method of a silicon-based OLED transverse turbulence isolation structure is characterized by comprising the following manufacturing steps of: s1, obtaining a CMOS substrate (2), then coating a film on the CMOS substrate (2) to form an anode layer (1), and forming an anode pattern through coating, exposure, development, etching and stripping; S2, coating an inorganic material layer on the anode pattern, wherein the thickness of the inorganic material layer is larger than or equal to that of the anode pattern, and forming a flattened inorganic material film layer (4) through coating, exposure, development, etching and stripping; s3, forming a lamination by evaporating a first inorganic material layer (5), a second inorganic material layer (7) and a third inorganic material layer (6) on the flattened inorganic material film layer (4) at one time, and forming a render cut structure in a non-pixel definition area through coating, exposure, development, etching and stripping; S4, in order to form an under cut structure, the etching rate among each layer of a lamination formed by regulating and controlling a first inorganic material layer (5), a second inorganic material layer (7) and a third inorganic material layer (6), respectively forming the first inorganic material layer (5), the second inorganic material layer (7) and the third inorganic material layer (6) by using materials with different etching rates, wherein the etching rate of the second inorganic material layer (7) is larger than that of the first inorganic material layer (5) and the third inorganic material layer (6), and an asymmetric partition opening is formed in the lamination formed by the first inorganic material layer (5), the second inorganic material layer (7) and the third inorganic material layer (6), and a groove is formed in the partition opening, wherein the height of the groove is larger than or equal to the height difference between the charge generation layer and the first electrode; and S5, after the Under cut structure is formed, evaporating the organic light-emitting layer (3), and separating the organic light-emitting layer (3) by the aid of the Under cut structure, and finally evaporating to form a cathode layer (8).
2. The method for manufacturing the silicon-based OLED transverse turbulence isolation structure according to claim 1, wherein after the formation of the render cut structure, a hole injection layer, a hole transport layer, a light emitting layer and an electron transport layer are respectively evaporated in an evaporator, an organic light emitting layer (3) is formed by evaporation, the organic light emitting layer (3) is broken at the groove, and after the evaporation of the organic light emitting layer (3), a cathode layer (8) is evaporated to obtain the silicon-based OLED transverse turbulence isolation structure.
3. The method for manufacturing the silicon-based OLED transverse turbulence isolation structure is characterized in that a CMOS driving circuit is prepared on a silicon wafer substrate to form a CMOS substrate (2), the CMOS substrate (2) is cleaned, a film coating is carried out on the cleaned CMOS substrate (2) to form an anode layer, the film coating of the CMOS substrate (2) is carried out to form an anode layer (1), then the anode layer is subjected to photoetching equipment, cleaning, coating, exposure, development and solidification, the PH process is completed, pattern formation is carried out, dry etching is carried out, in-situ photoresist stripping PR is carried out after etching is completed, and after photoresist stripping is completed, the CMOS substrate (2) is cleaned to remove polymers, so that an anode Pattern is finally obtained.
4. The method for manufacturing the silicon-based OLED transverse turbulence partition structure is characterized in that after a CMOS substrate (2) is cleaned, an inorganic material layer is coated again, the thickness of the inorganic material layer is larger than or equal to that of a coating film of an anode layer (1), the channel filling between anodes is guaranteed to be complete, after the inorganic material layer is coated, cleaning, coating, exposing, developing and solidifying are carried out, PH technology is carried out to complete Pattern, dry etching is carried out, after etching is completed, in-situ photoresist stripping PR is carried out, and after photoresist stripping is completed, the CMOS substrate (2) is cleaned to remove polymers, and a planarized inorganic material film layer (4) is obtained.
5. The method for manufacturing a cross turbulence isolation structure of a silicon-based OLED of claim 4, wherein the method comprises the steps of cleaning before coating a flattened inorganic film layer (4), coating a first inorganic material layer (5), coating a second inorganic material layer (7), coating a third inorganic material layer (6), repeating the coating process to form a laminated layer, photoetching a pixel definition area by using Mask1, cleaning, coating, exposing, developing and solidifying.
6. The method for manufacturing the cross turbulence isolation structure of the silicon-based OLED of claim 5, wherein patterning is performed after the PH process is completed, dry etching is performed, lamination formed by the first inorganic material layer (5), the second inorganic material layer (7) and the third inorganic material layer (6) of the pixel definition area (PDL pixel definition layer) is etched, in-situ photoresist stripping PR is performed after etching is completed, polymer is removed by cleaning the CMOS substrate (2) after in-situ photoresist stripping is completed, patterning is performed by using Mask2 after etching of the pixel definition area is completed, and cleaning, coating, exposure, development and solidification are performed on the third inorganic material layer (6) of the Under cut structure.
7. The method for manufacturing the silicon-based OLED transverse turbulence partition structure, as set forth in claim 6, is characterized in that the PH process is used for completing the Pattern formation of the third inorganic material layer (6), dry etching is carried out to remove the third inorganic material layer (6), the process formula for etching the third inorganic material layer (6) adopts a high selection ratio, the under-layer of the second inorganic material layer (7) is ignored, in-situ photoresist stripping PR is carried out after etching is completed, and after photoresist stripping is completed, the CMOS substrate (2) is cleaned to remove polymers, so that the Pattern formation of the third inorganic material layer (6) is realized.
8. The method for manufacturing the silicon-based OLED transverse turbulence partition structure, which is disclosed in claim 7, is characterized in that after the third inorganic material layer (6) of the Under cut structure is etched, mask3 is used for performing patterning on the second inorganic material layer (7) of the Under cut structure, cleaning, coating, exposing, developing and solidifying are performed, the patterning on the second inorganic material layer (7) of the inorganic layer is completed through a PH process, the second inorganic material layer (7) is etched by a dry method, the process formula for etching the second inorganic material layer (7) adopts a high selection ratio, the underlayers of the inorganic material first inorganic material layers (5) are ignored, in-situ photoresist stripping PR is performed after the etching is completed, and after the in-situ photoresist stripping is completed, the CMOS substrate (2) is cleaned to remove polymers, so that the patterning on the second inorganic material layer (7) is realized.
9. The method for manufacturing the cross flow disturbance isolating structure of the silicon-based OLED is characterized in that after etching of an inorganic material second inorganic material layer (7) of an Under cut structure is completed, mask4 is used for performing patterning of a first inorganic material layer (5) of the Under cut structure, cleaning, coating, exposing, developing and solidifying are performed, PH technology is used for performing patterning of the inorganic material first inorganic material layer (5), dry etching is performed to remove the first inorganic material layer (5), a process formula for etching the first inorganic material layer (5) adopts a high selection ratio, under-layer underlayers of inorganic material film layers (4) are ignored, in-situ photoresist stripping PR is performed after etching is completed, and after in-situ photoresist stripping is completed, the CMOS substrate (2) is cleaned to remove polymers, so that patterning of the first inorganic material layer (5) is achieved, and the Under cut structure of a PDL layer is manufactured.
10. The silicon-based OLED lateral turbulence blocking structure manufactured by the manufacturing method of the silicon-based OLED lateral turbulence blocking structure according to claim 1 is characterized by comprising an anode layer (1), a CMOS substrate (2), an organic light-emitting layer (3), an inorganic film layer (4), a first inorganic material layer (5), a third inorganic material layer (6), a second inorganic material layer (7) and a cathode layer (8).

Description

Silicon-based OLED transverse turbulence partition structure and manufacturing method thereof Technical Field The invention belongs to the technical field of semiconductor display industry, and particularly relates to a silicon-based OLED transverse turbulence partition structure, and a manufacturing method of the silicon-based OLED transverse turbulence partition structure. Background In the semiconductor display industry, organic Light-Emitting diodes (OLED) are one type of display that has been developed in recent years, and silicon-based OLED is one type of display. The silicon-based OLED not only can realize active addressing of pixels, but also can realize the preparation of structures such as a pixel driving circuit and the like on a silicon-based substrate, thereby being beneficial to reducing the system volume and realizing light weight. The silicon-based OLED is prepared by adopting a mature complementary metal oxide semiconductor (Complementary MetalOxide Semiconductor, CMOS for short) integrated circuit process, has the advantages of small volume, high resolution (Pixels Per Inch, PPI for short), high refresh rate and the like, and is widely applied to the field of near-to-eye display of Virtual Reality (VR for short) or augmented Reality (Augmented Reality, AR for short). In the manufacture of the semiconductor silicon-based OLED, the R unit, the G unit and the B unit (R: RED, RED display unit, G: GREEN, GREEN display unit and B: BLUE display unit) can be realized under the normal condition in the working process, and can emit light independently without affecting each other. In practical product design, as the line width and the line distance are smaller and smaller, current interference phenomenon can occur between two light emitting units. And the occurrence of current interference phenomenon can lead to the occurrence of stealing and lighting of adjacent display units, thereby influencing the display effect of products. A preparation method of a silicon-based OLED and a silicon-based OLED display module are named as a technology with a publication number of 108321311A in the prior art, and the technology comprises the following steps of S1, preparing a plurality of silicon-based masks with vapor deposition pixel patterns, S2, selecting the silicon-based masks with corresponding pixel patterns, S3, attaching the silicon-based masks to the alignment of a wafer, vapor deposition of corresponding OLED functional layers, S4, separating the silicon-based masks from the wafer by adopting a separation technology after vapor deposition of the OLED functional layers is finished, S5, repeating the steps S2-S4, vapor deposition of the rest functional layers for preparing the silicon-based OLED on the wafer respectively, and S6, packaging the silicon-based OLED substrates in the step S5, and finishing the preparation of the silicon-based OLED. According to the preparation method of the silicon-based OLED and the silicon-based OLED display module, the use of a CF layer and the independent preparation of the white OLED are reduced, so that the brightness of the silicon-based OLED display module is improved by four times, the PPI of the silicon-based OLED is improved, and the preparation process of the silicon-based OLED is simplified. However, this technique does not relate to the technical problem and technical solution of the present application. Disclosure of Invention The invention aims to solve the technical problem of providing the manufacturing method of the silicon-based OLED transverse turbulence partition structure, which has the advantages of simple steps, solves the problem that the display effect is influenced due to the fact that the adjacent display units are stolen and lightened due to the current interference phenomenon between the light-emitting units, and improves the display effect. The technical scheme adopted by the invention is as follows: The invention relates to a manufacturing method of a silicon-based OLED transverse turbulence isolation structure, which comprises the following manufacturing steps of: S1, obtaining a CMOS substrate, forming an anode layer on the CMOS substrate by coating, exposing, developing, etching and stripping to form an anode pattern; S2, coating an inorganic material layer on the anode pattern, wherein the thickness of the inorganic material layer is larger than or equal to that of the anode pattern, and forming a flattened inorganic material film layer 4 through coating, exposure, development, etching and stripping; s3, forming a lamination by evaporating a first inorganic material layer, a second inorganic material layer and a third inorganic material layer on the flattened inorganic material film layer at one time, and forming a render cut structure in a non-pixel definition area through coating, exposure, development, etching and stripping; S4, in order to form an under cut structure, the etching rate between each layer of a laminated layer formed by