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CN-117396057-A - Magnetic tunnel junction, manufacturing method thereof and magnetic random access memory

CN117396057ACN 117396057 ACN117396057 ACN 117396057ACN-117396057-A

Abstract

The present disclosure provides a magnetic tunnel junction, a method of fabricating the same, and a magnetic random access memory. The magnetic tunnel junction includes a free layer including a first free layer, a first ferromagnetic coupling layer, a data retention time enhancement layer, a second ferromagnetic coupling layer, and a second free layer in a stacked arrangement, wherein the data retention time enhancement layer has a curie temperature higher than the curie temperature of the first free layer. In the disclosure, the free layer of the magnetic tunnel junction comprises a first free layer, a first ferromagnetic coupling layer, a data retention time enhancement layer, a second ferromagnetic coupling layer and a second free layer which are stacked, wherein the Curie temperature of the data retention time enhancement layer is higher than that of the first free layer, and the Curie temperature of the free layer can be effectively improved by setting the data retention time enhancement layer, so that the high-temperature data retention of the magnetic memory such as STT-MRAM is satisfiedTime of stay (T) HTDR ) And wider operating temperature requirements.

Inventors

  • ZHANG YUNSEN
  • LI HUIHUI
  • ZHAO CHAO

Assignees

  • BEIJING CHAOXIAN MEMORY RES INSTITUTE

Dates

Publication Date
20240112
Application Date
20220630
Priority Date
20220630

Claims (15)

  1. 1. A magnetic tunnel junction comprising a free layer comprising a first free layer, a first ferromagnetic coupling layer, a data retention time enhancement layer, a second ferromagnetic coupling layer, and a second free layer in a stacked arrangement, wherein, the data retention time enhancing layer has a curie temperature that is higher than the curie temperature of the first free layer.
  2. 2. The magnetic tunnel junction of claim 1 wherein the material of the data retention time enhancement layer comprises a first element; or, a first element and a second element; wherein the first element has a Curie temperature higher than the Curie temperature of the material of the first free layer, and the second element is configured to cause the data retention time enhancing layer to remain amorphous during deposition and to remain crystalline after annealing.
  3. 3. The magnetic tunnel junction of claim 2 wherein the first element comprises cobalt; and/or the number of the groups of groups, the second element comprises boron, carbon and/or phosphorus.
  4. 4. According to claimThe magnetic tunnel junction of claim 2 wherein the material of the data retention time enhancing layer has the formula: co (Co) (1-x) B x Wherein x is more than or equal to 0 and less than or equal to 10 percent.
  5. 5. The magnetic tunnel junction of any one of claims 1-4 wherein the data retention time enhancing layer has a thickness of 0.3nm to 0.7nm.
  6. 6. The magnetic tunnel junction of any one of claims 1-4 wherein the data retention time enhancement layer comprises a plurality of sub-enhancement layers, the materials of different of the sub-enhancement layers being different.
  7. 7. The magnetic tunnel junction of claim 6 wherein the multi-layer sub-enhancement layer comprises a layer of cobalt boride, a layer of cobalt carbide, and a layer of cobalt phosphide in a stacked arrangement.
  8. 8. The magnetic tunnel junction of claim 6 wherein each of said sub-enhancement layers is a cobalt boride layer and wherein the boron content of each of said sub-enhancement layers is different.
  9. 9. The magnetic tunnel junction of any one of claims 1-4 wherein the material of the first free layer comprises one or a combination of at least two of cobalt-iron-boron, tungsten, molybdenum, magnesium oxide, iron-boron, cobalt-boron, ruthenium, tantalum; and/or the number of the groups of groups, the material of the first ferromagnetic coupling layer comprises one or a combination of at least two of tungsten, tantalum, molybdenum, vanadium, chromium, hafnium and niobium; and/or the number of the groups of groups, the material of the second free layer is one or a combination of at least two of cobalt-iron-boron, tungsten, molybdenum, magnesium oxide, iron-boron, cobalt-boron, ruthenium and tantalum; and/or the number of the groups of groups, the material of the second ferromagnetic coupling layer comprises one or a combination of at least two of tungsten, tantalum, molybdenum, vanadium, chromium, hafnium and niobium.
  10. 10. The magnetic tunnel junction of claim 9 wherein the first free layer has the formula: [ Co ] a Fe (1-a) ] b B (1-b) Wherein a is more than 0 and less than or equal to 40 percent, b is more than or equal to 15 percent and less than or equal to 25 percent; and/or the number of the groups of groups, the chemical formula of the second free layer is: [ Co ] c Fe (1-c) ] d B (1-d) Wherein c is more than 0 and less than or equal to 50 percent, d is more than or equal to 15 percent and less than or equal to 35 percent.
  11. 11. The magnetic tunnel junction of any one of claims 1-4 wherein the first free layer has a thickness of 0.5nm to 1.5nm; and/or the number of the groups of groups, the thickness of the second free layer is 0.3 nm-1.0 nm.
  12. 12. The magnetic tunnel junction of any one of claims 1-4 further comprising a capping layer disposed on the second free layer, the capping layer material comprising magnesium oxide.
  13. 13. The magnetic tunnel junction of any one of claims 1-4 further comprising a reference layer and a tunneling barrier layer disposed on the reference layer, the free layer disposed on the tunneling barrier layer; the material of the reference layer comprises one or a combination of at least two of cobalt-iron-boron, cobalt-iron-carbon, iron and iron-cobalt; the material of the tunneling barrier layer includes magnesium oxide.
  14. 14. The manufacturing method of the magnetic tunnel junction is characterized by comprising the following steps of: forming a reference layer; forming a tunneling barrier layer on the reference layer; and forming a free layer on the tunneling barrier layer, wherein the free layer comprises a first free layer, a first ferromagnetic coupling layer, a data retention time enhancement layer, a second ferromagnetic coupling layer and a second free layer which are arranged in a stacked manner, and the Curie temperature of the data retention time enhancement layer is higher than that of the first free layer.
  15. 15. A magnetic random access memory comprising a magnetic memory cell comprising a magnetic tunnel junction according to any one of claims 1 to 13.

Description

Magnetic tunnel junction, manufacturing method thereof and magnetic random access memory Technical Field The disclosure relates to the technical field of semiconductors, in particular to a magnetic tunnel junction, a manufacturing method thereof and a magnetic random access memory. Background Magnetic random access memory (Magnetic random access memory, MRAM) is a new type of nonvolatile memory, which has the characteristics of nonvolatile, unlimited read/write, high endurance, fast access time, low operating voltage, etc., has high-speed read/write capability of static random access memory (static random access memory, SRAM), and high integration of dynamic random access memory (dynamic random access memory, DRAM), and has good compatibility with complementary metal oxide semiconductor (complementary metal oxide semiconductor, CMOS), and thus has been receiving attention. For example, STT-MRAM (spin-torque-transfer-MRAM) is considered as one of the most promising new types of memory, and has been gradually started to be applied to the consumer electronics field and the like. To expand the commercial application, the high temperature data retention time (High Temperature Data Retention, HTDR) needs to be maintained at a high level, such as: when the fluorescent lamp is used in the fields of automobile electronics, consumer electronics and the like, the fluorescent lamp is required to be maintained for at least a few years; in another aspect, when STT-MRAM is applied to embedded systems as a medium for code storage, it also requires high temperature data retention time. Disclosure of Invention The following is a summary of the subject matter of the detailed description of the present disclosure. This summary is not intended to limit the scope of the claims. The present disclosure provides a magnetic tunnel junction, a method of fabricating the same, and a magnetic random access memory. A first aspect of the present disclosure provides a magnetic tunnel junction comprising a free layer comprising a first free layer, a first ferromagnetic coupling layer, a data retention time enhancement layer, a second ferromagnetic coupling layer, and a second free layer in a stacked arrangement, wherein, the data retention time enhancing layer has a curie temperature that is higher than the curie temperature of the first free layer. According to some embodiments of the present disclosure, the material of the data retention time enhancement layer comprises a first element; or, a first element and a second element; wherein the first element has a Curie temperature higher than the Curie temperature of the material of the first free layer, and the second element is configured to cause the data retention time enhancing layer to remain amorphous during deposition and to remain crystalline after annealing. According to some embodiments of the disclosure, the first element comprises cobalt; and/or the number of the groups of groups, the second element comprises boron, carbon and/or phosphorus. According to some embodiments of the present disclosure, the data retention time enhancing layer material has the formula: co. According to some embodiments of the present disclosure, the data retention time enhancing layer material has the formula: co (Co) (1-x) B x Wherein x is more than or equal to 0 and less than or equal to 10 percent. According to some embodiments of the disclosure, the data retention time enhancing layer has a thickness of 0.3nm to 0.7nm. According to some embodiments of the disclosure, the data retention time enhancement layer comprises a plurality of sub-enhancement layers, the materials of different ones of the sub-enhancement layers being different. According to some embodiments of the present disclosure, the multi-layered sub-enhancement layer includes a cobalt boride layer, a cobalt carbide layer, and a cobalt phosphide layer in a stacked arrangement. According to some embodiments of the present disclosure, the material of each sub-enhancement layer is a cobalt boride layer, and the boron content in the sub-enhancement layers is different from one layer to another. According to some embodiments of the present disclosure, the material of the first free layer comprises one or a combination of at least two of cobalt-iron-boron, tungsten, molybdenum, magnesium oxide, iron-boron, cobalt-boron, ruthenium, tantalum; and/or the number of the groups of groups, the material of the first ferromagnetic coupling layer comprises one or a combination of at least two of tungsten, tantalum, molybdenum, vanadium, chromium, hafnium and niobium; and/or the number of the groups of groups, the material of the second free layer is one or a combination of at least two of cobalt-iron-boron, tungsten, molybdenum, magnesium oxide, iron-boron, cobalt-boron, ruthenium and tantalum; and/or the number of the groups of groups, the material of the second ferromagnetic coupling layer comprises one or a combination of at least two of tungsten, tan