CN-117420262-B - Determination method and device for outgassing characteristics of internal materials of wafer level vacuum packaging device

CN117420262BCN 117420262 BCN117420262 BCN 117420262BCN-117420262-B

Abstract

The application relates to a method and a device for determining the outgassing characteristics of internal materials of a wafer level vacuum packaging device. The method comprises the steps of obtaining a first quality factor and a first resonance frequency of a test sample at a standard temperature, obtaining a second quality factor and a second resonance frequency of the test sample at each test temperature by adjusting the temperature in a temperature test box under the condition that the test sample is placed in the temperature test box, determining the frequency change amplitude of the test sample at each test temperature according to the first resonance frequency and each second resonance frequency, determining the factor change amplitude of the test sample at each test temperature according to the first quality factor and each second quality factor, and determining the gassing characteristic of an internal material of the test sample according to the frequency change amplitude and the factor change amplitude of the test sample at each test temperature. By adopting the method, the deflation characteristic of the internal material of the wafer level vacuum packaging device can be accurately obtained.

Inventors

HUANG QINWEN
EN YUNFEI
LU GUOGUANG
ZHOU BIN
ZHU CHUNLONG
DONG XIANSHAN
SU WEI

Assignees

中国电子产品可靠性与环境试验研究所（（工业和信息化部电子第五研究所）（中国赛宝实验室））

Dates

Publication Date: 20260508
Application Date: 20230920

Claims (10)

1. A method for determining outgassing characteristics of an interior material of a wafer level vacuum packaging device, the method comprising: Acquiring a first quality factor and a first resonant frequency of a test sample at a standard temperature, wherein the test sample is a wafer-level vacuum packaged micro-electromechanical system (MEMS) device; Under the condition that the test sample is placed in a temperature test box, a second quality factor and a second resonance frequency of the test sample at each test temperature are obtained by adjusting the temperature in the temperature test box; determining the frequency variation amplitude of the test sample at each test temperature according to the first resonant frequency and each second resonant frequency; determining the quality factor variation amplitude of the test sample at each test temperature according to the first quality factor and each second quality factor; For each test temperature, taking the difference value between the frequency variation amplitude and the quality factor variation amplitude of the test sample at the test temperature as a new quality factor variation amplitude of the test sample at the test temperature; determining the gassing characteristic of the internal material of the test sample according to the new quality factor variation amplitude of the test sample at each test temperature.
2. The method of claim 1, wherein the obtaining a second quality factor and a second resonant frequency of the test sample at each test temperature by adjusting the temperature in the temperature test chamber comprises: for each test temperature, adjusting the temperature in the temperature test chamber to that test temperature; Under the condition that the temperature of the temperature test chamber is stable at the test temperature, respectively testing the quality factor and the resonance frequency of the test sample at least twice to obtain at least two quality factors and at least two resonance frequencies of the test sample at the test temperature; and determining a second quality factor and a second resonance frequency of the test sample at the test temperature according to at least two quality factors and at least two resonance frequencies of the test sample at the test temperature.
3. The method of claim 2, wherein determining the second quality factor and the second resonant frequency of the test sample at the test temperature based on the at least two quality factors and the at least two resonant frequencies of the test sample at the test temperature comprises: Taking the average value of at least two quality factors of the test sample at the test temperature as a second quality factor of the test sample at the test temperature; And taking the average value of at least two resonant frequencies of the test sample at the test temperature as a second resonant frequency of the test sample at the test temperature.
4. The method of claim 1, wherein determining the magnitude of the frequency change of the test sample at each test temperature based on the first resonant frequency and each second resonant frequency comprises: Determining, for each test temperature, a frequency difference between the first resonant frequency and a second resonant frequency of the test sample at that test temperature; The ratio between the frequency difference and the first resonant frequency is taken as the frequency variation amplitude of the test sample at the test temperature.
5. The method of claim 1, wherein determining the magnitude of the change in the quality factor of the test sample at each test temperature based on the first quality factor and each second quality factor comprises: Determining, for each test temperature, a factor difference between the first quality factor and a second quality factor of the test sample at that test temperature; and taking the ratio of the factor difference to the first quality factor as the quality factor change amplitude of the test sample at the test temperature.
6. The method of claim 1, wherein said determining the gassing characteristics of the internal material of said test sample based on the new quality factor variation amplitude of said test sample at each test temperature comprises: obtaining a curve taking the test temperature as a horizontal axis and taking the new factor change amplitude as a vertical axis according to the new factor change amplitude of the test sample at each test temperature; Using the curve, the gassing characteristics of the internal materials of the test sample are described.
7. A device for determining outgassing characteristics of an interior material of a wafer level vacuum packaging device, the device comprising: The device comprises a first acquisition module, a second acquisition module and a third acquisition module, wherein the first acquisition module is used for acquiring a first quality factor and a first resonance frequency of a test sample at a standard temperature, and the test sample is a wafer-level vacuum packaged micro-electromechanical system (MEMS) device; the second acquisition module is used for acquiring a second quality factor and a second resonance frequency of the test sample at each test temperature by adjusting the temperature in the temperature test box under the condition that the test sample is placed in the temperature test box; the first determining module is used for determining the frequency change amplitude of the test sample at each test temperature according to the first resonant frequency and each second resonant frequency; The second determining module is used for determining the quality factor variation amplitude of the test sample at each test temperature according to the first quality factor and each second quality factor; And the third determining module is used for taking the difference value between the frequency variation amplitude and the quality factor variation amplitude of the test sample at each test temperature as the new quality factor variation amplitude of the test sample at the test temperature, and determining the air release characteristic of the internal material of the test sample according to the new quality factor variation amplitude of the test sample at each test temperature.
8. A computer device comprising a memory and a processor, the memory storing a computer program, characterized in that the processor implements the steps of the method of any of claims 1 to 6 when the computer program is executed.
9. A computer readable storage medium, on which a computer program is stored, characterized in that the computer program, when being executed by a processor, implements the steps of the method of any of claims 1 to 6.
10. A computer program product comprising a computer program, characterized in that the computer program, when being executed by a processor, implements the steps of the method of any of claims 1 to 6.

Description

Determination method and device for outgassing characteristics of internal materials of wafer level vacuum packaging device Technical Field The application relates to the technical field of micro-electromechanical system packaging, in particular to a method and a device for determining the outgassing characteristics of materials in a wafer level vacuum packaging device. Background With the development of Micro-Electro MECHANICAL SYSTEM, MEMS (Micro-Electro-mechanical system) packaging technology, wafer level packaging technology is developed, but after the wafer level vacuum packaging of the MEMS device, the stability of the air pressure in the packaging cavity can fluctuate due to the deflation of the material in the cavity, and the performance degradation of the MEMS device can be caused by the change of the air pressure in the Micro cavity of the MEMS wafer level airtight packaging. The high-temperature stress can deflate the materials in the MEMS wafer level vacuum packaging cavity, so that the drift of the performance of the MEMS wafer level vacuum packaging device is caused, and the stability of the performance of the device is affected. In order to determine the performance drift characteristics of the vacuum-packaged MEMS device at high temperature, various technical researches have been conducted to solve the testing requirements of the air pressure and the air pressure variation in the MEMS micro-cavity, such as the quality factor monitoring method, the IR transmission method, the raman spectroscopy method, the residual gas analysis method, and the like. However, the quality factor monitoring method derives the internal material outgassing amount caused by the vacuum packaging process by acquiring the change of the internal cavity air pressure caused by the internal material outgassing caused by the wafer level vacuum packaging process, the IR transmission method and the Raman spectroscopy method acquire the related information of the gas in the cavity by testing the gas composition and the gas amount in the cavity, and the residual gas analysis method acquires the related information of the gas in the cavity by puncturing the micro cavity, sampling the gas in the cavity and analyzing by using a mass spectrometer. These methods are direct consideration of the outgassing of the internal materials and do not take into account other changes that occur in vacuum packaged MEMS devices at high temperatures, such as high temperatures that can cause residual stresses in the structure of the material within the cavity and changes in the rigidity of the structure. Therefore, the methods have inaccurate testing results on the deflation characteristics of the materials in the cavity after vacuum packaging. Disclosure of Invention In view of the foregoing, it is desirable to provide a method and apparatus for determining outgassing characteristics of materials within a wafer level vacuum packaging device. In a first aspect, the present application provides a method for determining outgassing characteristics of an internal material of a wafer level vacuum packaging device, including: acquiring a first quality factor and a first resonant frequency of a test sample at a standard temperature, wherein the test sample is a wafer-level vacuum packaged micro-electromechanical system MEMS device; under the condition that a test sample is placed in a temperature test box, a second quality factor and a second resonance frequency of the test sample at each test temperature are obtained by adjusting the temperature in the temperature test box; determining the frequency variation amplitude of the test sample at each test temperature according to the first resonant frequency and each second resonant frequency; Determining the factor change amplitude of the test sample at each test temperature according to the first quality factor and each second quality factor; And determining the gassing characteristic of the internal material of the test sample according to the frequency variation amplitude and the factor variation amplitude of the test sample at each test temperature. In one embodiment, obtaining a second quality factor and a second resonant frequency of the test sample at each test temperature by adjusting the temperature in the temperature test chamber comprises: The method comprises the steps of adjusting the temperature in a temperature test box to the test temperature according to each test temperature, respectively testing the quality factor and resonance frequency of a test sample at least twice under the condition that the temperature of the temperature test box is stable to the test temperature to obtain at least two quality factors and at least two resonance frequencies of the test sample at the test temperature, and determining a second quality factor and a second resonance frequency of the test sample at the test temperature according to the at least two quality factors and the at least two resonance frequenci