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CN-117440744-B - Sb7Te/Te doped Bi0.5Sb1.5Te3 thermoelectric film and preparation method thereof

CN117440744BCN 117440744 BCN117440744 BCN 117440744BCN-117440744-B

Abstract

The invention provides a Sb 7 Te/Te doped Bi 0.5 Sb 1.5 Te 3 thermoelectric film and a preparation method thereof, and relates to the technical field of thermoelectric films. The invention adopts radio frequency sputtering to realize the preparation of the Sb 7 Te/Te doped Bi 0.5 Sb 1.5 Te 3 thermoelectric film on a polyimide substrate, and adjusts the substrate temperature and sputtering power in the magnetron sputtering process to prepare the film which has very high crystallinity and is effectively doped with a second phase (namely Te and Sb 7 Te), so that the interface scattering effect is obvious, the conductivity is greatly improved, and the bismuth telluride-based film with excellent thermoelectric performance is prepared. The prepared Sb 7 Te/Te doped Bi 0.5 Sb 1.5 Te 3 thermoelectric film has good flexibility by taking the flexible polyimide as the substrate, and can be better applied to wearable devices.

Inventors

  • ZOU QI
  • DING FAZHU
  • GU HONGWEI
  • SHANG HONGJING
  • ZHANG LIN

Assignees

  • 中国科学院电工研究所

Dates

Publication Date
20260505
Application Date
20231012

Claims (10)

  1. 1. A preparation method of a Sb 7 Te/Te doped Bi 0.5 Sb 1.5 Te 3 thermoelectric film comprises the following steps: Sequentially sputtering a Bi 0.5 Sb 1.5 Te 3+x alloy target, a second sputtering Sb metal target and a third sputtering Bi 0.5 Sb 1.5 Te 3+x alloy target on the surface of the flexible polyimide substrate by utilizing radio frequency magnetron sputtering to obtain a Sb 7 Te/Te doped Bi 0.5 Sb 1.5 Te 3 thermoelectric film; The temperature of the flexible polyimide substrate in the radio frequency magnetron sputtering process is 300-450 ℃, the power of the first sputtering and the third sputtering is independently 40-80W, the power of the second sputtering is 30-40W, and x is more than or equal to 0.1 and less than or equal to 0.3 in the Bi 0.5 Sb 1.5 Te 3+x alloy target.
  2. 2. The method of claim 1, wherein the Bi 0.5 Sb 1.5 Te 3+x alloy target is 120-140 mm away from the flexible polyimide substrate and the Sb metal target is 140-160 mm away from the flexible polyimide substrate.
  3. 3. The method according to claim 1, wherein the first sputtering time is 30 to 45 minutes, the second sputtering time is 1 to 5 minutes, and the third sputtering time is 30 to 45 minutes.
  4. 4. The method for preparing the silicon dioxide film according to claim 1 or 3, wherein the working air pressure of the radio frequency magnetron sputtering is 0.5-1 Pa.
  5. 5. The method of producing according to claim 1 or 2, wherein the production of the Bi 0.5 Sb 1.5 Te 3+x alloy target comprises the steps of: Mixing metal Bi, metal Sb and metal Te according to the molar ratio of Bi to Sb to Te of 0.5:1.5 (3.15-3.35), performing ball milling to obtain alloy mixed powder, and performing first hot pressing on the alloy mixed powder to obtain the Bi 0.5 Sb 1.5 Te 3+x alloy target, wherein x is more than or equal to 0.1 and less than or equal to 0.3.
  6. 6. The method according to claim 5, wherein the first hot press is performed at a temperature of 400-500 ℃, a pressure of 40-60 mpa, and a time of 30-40 min.
  7. 7. The method of producing according to claim 1 or 2, characterized in that the production of the Sb metal target comprises the steps of: Ball milling is carried out on metal Sb to obtain metal powder, and second hot pressing is carried out on the metal powder to obtain the Sb metal target.
  8. 8. The method according to claim 7, wherein the second hot press is performed at a temperature of 400-500 ℃, a pressure of 40-60 mpa, and a time of 30-40 min.
  9. 9. The method of claim 1 or 3, further comprising cleaning and drying the flexible polyimide substrate prior to the first sputtering.
  10. 10. The Sb 7 Te/Te doped bismuth telluride based thin film material prepared by the method of any one of claims 1-9, comprising Bi 0.5 Sb 1.5 Te 3 and Te and Sb 7 Te doped in the Bi 0.5 Sb 1.5 Te 3 .

Description

Sb7Te/Te doped Bi0.5Sb1.5Te3 thermoelectric film and preparation method thereof Technical Field The invention relates to the technical field of thermoelectric films, in particular to a Sb 7 Te/Te doped Bi 0.5Sb1.5Te3 thermoelectric film and a preparation method thereof. Background Thermoelectric technology is an all-solid-state energy conversion technology, and utilizes the Seebeck effect of materials to convert heat energy into electric energy under the condition of temperature difference at two ends. The solar energy power generation device has the advantages of simple structure, firmness, durability, no moving parts, no noise and the like, is applied to the fields of aerospace, ocean thermoelectric power generation, waste heat utilization and the like, and has a huge application prospect in the hot spot fields of solar energy utilization, wearable electronic devices, sensing and the like. With advances in science and technology, high-tech fields such as wearable electronics, sensors, and the like place new demands on thermoelectric technology, namely excellent flexibility. The traditional inorganic thermoelectric material has high rigidity, and can realize flexibility by combining with a flexible substrate. In recent years, the excellent properties of commercial bismuth telluride-based thermoelectric materials have attracted academic and industrial interest. Among them, bi 0.5Sb1.5Te3 is an effective P-type thermoelectric material and hexagonal layered compound, which is more useful for practical wearable devices if Bi 0.5Sb1.5Te3 is made into a two-dimensional thin film material and its room temperature performance is improved. Disclosure of Invention The invention aims to provide a Sb 7 Te/Te doped Bi 0.5Sb1.5Te3 thermoelectric film and a preparation method thereof, and the Sb 7 Te/Te doped Bi 0.5Sb1.5Te3 thermoelectric film provided by the invention has excellent thermoelectric performance and can be better applied to wearable devices. In order to achieve the above object, the present invention provides the following technical solutions: The invention provides a preparation method of a Sb 7 Te/Te doped Bi 0.5Sb1.5Te3 thermoelectric film, which comprises the following steps: Sequentially sputtering a Bi 0.5Sb1.5Te3+x alloy target, a second sputtering Sb metal target and a third sputtering Bi 0.5Sb1.5Te3+x alloy target on the surface of the flexible polyimide substrate by utilizing radio frequency magnetron sputtering to obtain a Sb 7 Te/Te doped Bi 0.5Sb1.5Te3 thermoelectric film; The temperature of the flexible polyimide substrate in the radio frequency magnetron sputtering process is 300-450 ℃, the power of the first sputtering and the third sputtering is independently 40-80W, the power of the second sputtering is 30-40W, and x is more than or equal to 0.1 and less than or equal to 0.3 in the Bi 0.5Sb1.5Te3+x alloy target. Preferably, the distance between the Bi 0.5Sb1.5Te3+x alloy target and the flexible polyimide substrate is 120-140 mm, and the distance between the Sb metal target and the flexible polyimide substrate is 140-160 mm. Preferably, the time of the first sputtering is 30-45 min, the time of the second sputtering is 1-5 min, and the time of the third sputtering is 30-45 min. Preferably, the working air pressure of the radio frequency magnetron sputtering is 0.5-1 Pa. Preferably, the preparation of the Bi 0.5Sb1.5Te3+x alloy target comprises the following steps: Mixing metal Bi, metal Sb and metal Te according to the molar ratio of Bi to Sb to Te of 0.5:1.5 (3.15-3.35), performing ball milling to obtain alloy mixed powder, and performing first hot pressing on the alloy mixed powder to obtain the Bi 0.5Sb1.5Te3+x alloy target, wherein x is more than or equal to 0.1 and less than or equal to 0.3. Preferably, the temperature of the first hot pressing is 400-500 ℃, the pressure is 40-60 MPa, and the time is 30-40 min. Preferably, the preparation of the Sb metal target comprises the steps of: Ball milling is carried out on metal Sb to obtain metal powder, and second hot pressing is carried out on the metal powder to obtain the Sb metal target. Preferably, the temperature of the second hot pressing is 400-500 ℃, the pressure is 40-60 MPa, and the time is 30-40 min. Preferably, before the first sputtering, cleaning and drying the flexible polyimide substrate are further included. The invention provides the Sb 7 Te/Te doped bismuth telluride-based thin film material prepared by the preparation method, which comprises Bi 0.5Sb1.5Te3, te doped in Bi 0.5Sb1.5Te3 and Sb 7 Te. The invention provides a preparation method of a Sb 7 Te/Te doped Bi 0.5Sb1.5Te3 thermoelectric film, which comprises the following steps of sequentially performing first sputtering a Bi 0.5Sb1.5Te3+x alloy target, second sputtering a Sb metal target and third sputtering a Bi 0.5Sb1.5Te3+x alloy target on the surface of a flexible polyimide substrate by utilizing radio frequency magnetron sputtering to obtain the Sb 7 Te/Te dope