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CN-117448793-B - Thin-layer two-dimensional oxide material and preparation and application thereof

CN117448793BCN 117448793 BCN117448793 BCN 117448793BCN-117448793-B

Abstract

The invention discloses a thin layer two-dimensional oxide material and its preparation and application, which comprises the steps of firstly carrying out gas plasma treatment on a substrate, then carrying out chemical vapor deposition on the substrate after the gas plasma treatment, thereby being capable of growing thin-layer two-dimensional oxide materials, and being particularly suitable for growing thin-layer two-dimensional high-dielectric-constant oxide materials with controllable thickness. The thin-layer two-dimensional oxide material is a standing thin layer and obliquely grows on a substrate, is thinner than oxide materials grown by common CVD, is easy to transfer, is suitable for manufacturing high-performance low-power consumption memristors, and can be widely applied to preparation of fin field effect transistors.

Inventors

  • ZHANG LIJIE
  • WANG PEIJIAN
  • HONG YUKUN

Assignees

  • 温州大学新材料与产业技术研究院

Dates

Publication Date
20260512
Application Date
20231022

Claims (7)

  1. 1. The thin-layer two-dimensional oxide material is characterized by being formed on a silicon wafer substrate treated by gas plasma through chemical vapor deposition, wherein the two-dimensional oxide material is an erected thin layer and obliquely grows on the silicon wafer substrate treated by the gas plasma, the gas is argon, air, oxygen or nitrogen, the power of the plasma treatment is 30-100W, the time is 5-20 min, the flow of the gas is 5-20 sccm, and the oxide is molybdenum trioxide, bismuth oxide or antimony oxide.
  2. 2. The thin two-dimensional oxide material according to claim 1, wherein the silicon wafer substrate is a SiO 2 /Si substrate having an oxide layer thickness of 285 nm a.
  3. 3. A method of preparing the thin two-dimensional oxide material of claim 1 or 2, comprising: Step S1, carrying out gas plasma treatment on a silicon wafer substrate, wherein the gas is argon, air, oxygen or nitrogen, so as to obtain a plasma-treated substrate, the power of the plasma treatment is 30-100W, the time is 5-20 min, and the flow rate of the gas is 5-20 sccm; And S2, depositing oxide powder on the plasma-treated substrate through chemical vapor deposition in carrier gas to obtain an established thin-layer two-dimensional oxide material, or reacting chalcogenide or halide powder with oxygen in the carrier gas and depositing the chalcogenide or halide powder on the plasma-treated substrate through chemical vapor deposition to obtain the established thin-layer two-dimensional oxide material, wherein the carrier gas is argon or nitrogen.
  4. 4. The method of preparing a thin two-dimensional oxide material according to claim 3, wherein in the step S1, the silicon wafer substrate is a SiO 2 /Si substrate having an oxide layer thickness of 285 nm.
  5. 5. The method of preparing a thin two-dimensional oxide material according to claim 3 or 4, wherein step S2 comprises: Placing molybdenum disulfide or bismuth iodide powder on a high-temperature-resistant carrier, and placing the high-temperature-resistant carrier in a central heating zone of a tube furnace, and then placing the substrate subjected to plasma treatment at a position which is positioned at the outlet side of the tube furnace and is 10-30 cm away from the center of the tube furnace; Introducing carrier gas with the flow rate of 200-300 sccm into the tubular furnace, and continuously introducing the carrier gas for 10-20 min; then, adjusting the flow rate of the carrier gas to 40-70 sccm, introducing 4-10 sccm of oxygen, continuously introducing the carrier and the oxygen, gradually heating the tube furnace until the temperature of a central heating zone of the tube furnace reaches 700-800 ℃, and then carrying out heat preservation reaction for 5-15 min; And after the reaction is finished, naturally cooling to obtain the thin-layer two-dimensional oxide material growing on the substrate.
  6. 6. The method of preparing a thin two-dimensional oxide material according to claim 3 or 4, wherein step S2 comprises: Placing antimony oxide powder on a high-temperature-resistant carrier, and placing the high-temperature-resistant carrier in a central heating zone of a tube furnace, and placing the substrate subjected to plasma treatment at a position which is positioned at an outlet side of the tube furnace and is 10-30 cm away from the center of the tube furnace; Introducing carrier gas with the flow rate of 200-300 sccm into the tubular furnace, and continuously introducing the carrier gas for 10-20 min; Then, adjusting the flow rate of the carrier gas to 40-70 sccm, continuously introducing the carrier gas, and gradually heating the tube furnace until the temperature of a central heating zone of the tube furnace reaches 600-700 ℃, and carrying out heat preservation reaction for 5-15 min; And after the reaction is finished, naturally cooling to obtain the thin-layer two-dimensional oxide material growing on the substrate.
  7. 7. Use of the thin layer two-dimensional oxide material according to claim 1 or 2 for the fabrication of memristors or fin field effect transistors.

Description

Thin-layer two-dimensional oxide material and preparation and application thereof Technical Field The invention belongs to the technical field of material preparation, and particularly relates to a thin-layer two-dimensional oxide material, and preparation and application thereof. Background Memristors, i.e., resistive random access memories (ResistiveRandomAccessMemory, abbreviated as RRAM), are nonlinear resistive elements with memory function, and are the fourth passive circuit elements following resistors, inductors, and capacitors. The typical structure of the memristor is a sandwich structure with three layers at two ends overlapped, and specifically comprises a top electrode, a bottom electrode and a resistance change layer sandwiched between two metal electrodes. A voltage is applied to the top electrode, the bottom electrode is grounded, and a forward voltage is applied between the top electrode and the bottom electrode for testing. The device resistance changes reversibly between a high resistance state (HIGH RESISTANCE STATE, HRS) and a Low resistance state (Low RESISTANCE STATE, LRS) with changes in the external voltage signal, a typical current-voltage curve being a hysteresis loop that crosses the origin to cross closure. That is, the memristor may exhibit a high level (corresponding to a low resistance state) and a low level (corresponding to a high resistance state) under a voltage scan condition, corresponding to two states of "0" and "1", thereby having a data storage function. Memristors have proven useful in new types of memory devices and neuro-mimicry devices. Different resistive layer materials and electrode materials have different conversion mechanisms and memristor performances. In past studies, many materials with resistive effects were found to exhibit varying resistive characteristics for memristors fabricated based on different types of materials. Compared with other resistive materials, the binary metal oxide has the advantages of simple structure, easy control of material components, compatibility of the preparation process and the CMOS process, and the like, so that the binary metal oxide is more concerned by industry, such as Spansion company adopting CuO x, three star company adopting NiO, macronix company adopting WO x and NEC company adopting TaO x. However, the conventional memristor based on oxide as a dielectric layer has some problems to be solved, namely, firstly, the resistance performance of the memristor needs to be further improved, secondly, the stability of the memristor needs to be improved, and finally, the currently reported resistance process of the memristor mostly relates to ion migration, and the phenomenon that the device is invalid due to the fact that ions pass through an electrode easily occurs during the ion migration. Two-dimensional materials are unique in solving the above problems by virtue of their superior physical, chemical and mechanical properties. As early as the 60 s of the 20 th century, there have been reports on the phenomenon of resistance change of thin film materials, but they have not attracted extensive attention due to the limitations of the thin film material preparation technology at the time. In recent years, along with the rapid development of material preparation technology and the size limitation problem encountered by traditional memories, RRAM based on two-dimensional materials has attracted attention from a large number of semiconductor companies and researchers. At present, the memristor made of the two-dimensional material has the advantages of ultra-thin thickness at the atomic layer level, low power consumption, small volume, excellent flexibility and the like, so that the memristor becomes a research hot spot, and the thickness of a resistive layer is generally 0.1-100 nm, and the memristor made of the two-dimensional material such as MoS 2、WS2 and the like. In addition, no matter the memristor is applied to a memory or logic calculation or nerve synapse bionics, higher performance and lower power consumption are required to be met, and the existing memristor generally has the defects of small resistance variation, high operation voltage and high power consumption. When the conduction mechanism of the memristor is a conductive filament mechanism, the thickness of the two-dimensional material determines the set voltage, and the thinner the material is, the smaller the set voltage is. Moreover, thin two-dimensional materials with atomic layer thickness have the potential to be applied to better miniature, higher integration electronic devices in the latter molar age. Two-dimensional materials are typically prepared by chemical vapor deposition and mechanical stripping methods. However, the preparation of thin (e.g., ultra-thin thickness at the atomic layer level) two-dimensional materials generally requires the use of complex deposition techniques, such as atomic layer deposition, and the problem of thickness control