CN-117466335-B - Bismuth vanadate material with function of selectively detecting low-concentration hydrogen sulfide gas

Abstract

The invention discloses a bismuth vanadate material with a function of selectively detecting low-concentration hydrogen sulfide gas and application of the bismuth vanadate material serving as a light-driven sensor for detecting the low-concentration hydrogen sulfide gas in a high-selectivity manner, and belongs to the technical fields of material preparation and gas-sensitive sensing. The method has the advantages that the simple and easy-to-synthesize dodecahedral bismuth vanadate is utilized, low-concentration hydrogen sulfide can be effectively sensed under the driving of light, and the method has high response value, good selectivity, long-term stability and low detection limit. The invention has simple process, low cost, large-scale production, meets the actual production requirement and has great application potential.

Inventors

• YANG CAN
• WANG XINCHEN
• ZHAO FEI
• DAI YANFENG

Assignees

• 福州大学

Dates

Publication Date

20260512

Application Date

20231025

Claims (2)

1. 1. The application of the bismuth vanadate material in preparing the room-temperature light-driven sensor of the low-concentration hydrogen sulfide gas is characterized in that the bismuth vanadate material is an eighteen-surface smooth body, belongs to monoclinic-phase bismuth vanadate, exposes 4 (110), 4 (011), 2 (010) and 8 (111) crystal faces, can detect the low-concentration hydrogen sulfide gas in a high-selectivity mode under room-temperature light driving, and has a theoretical detection limit of 12.3 ppb.
2. 2. The method for preparing bismuth vanadate material according to claim 1, comprising the following steps: 1) Respectively dissolving 12 mmol bismuth nitrate and 12 mmol ammonium metavanadate in 50 mL 2M nitric acid solution, uniformly mixing and stirring the two solutions, adding 5g urea, stirring and heating to 90 ℃; 2) Continuously stirring the mixed solution obtained in the step 1) for 24 hours at 90 ℃; 3) Cooling the mixture obtained in the step 2) to room temperature, centrifuging, and washing with distilled water and ethanol for several times; 4) And 3) drying the solid obtained in the step 3) for 8 hours at the temperature of 80 ℃ to obtain the decaoctahedral bismuth vanadate material.

Description

Bismuth vanadate material with function of selectively detecting low-concentration hydrogen sulfide gas Technical Field The invention belongs to the technical field of material preparation and gas sensing, and particularly relates to a preparation method and application of a bismuth vanadate material synthesized by a homogeneous precipitation method and having a function of selectively detecting low-concentration hydrogen sulfide gas. Background The detection of low concentrations of hydrogen sulfide from the environment is of great importance to both the ecosystem and human health. Among the many chemical sensing approaches used to achieve a response to hydrogen sulfide, photo-activated sensing is considered to be a low cost, portable strategy at room temperature. However, some metal oxide semiconductors have been operated at ambient temperature by photoactivation, but it is difficult to maintain good sensing performance. Crystal plane engineering is one of the most effective strategies for improving gas-sensitive performance, because some crystal planes have high surface energy and abundant low coordination atoms, and can promote the photogenerated carrier migration process and the target gas adsorption process simultaneously. Attention is paid to bismuth vanadate, an ideal light-activated material, which is not only responsive to visible light, but also has a manipulable crystal face at the atomic level. At present, related researches report that bismuth vanadate has various different morphologies and exposes different crystal faces, such as forty-dihedral exposing (110) and (010) and thirty-facial exposing (132), (321) and (121), but no eighteen-facial bismuth vanadate which exposes (111) crystal faces through crystal face engineering and simultaneously regulates crystal face proportion has been applied to gas sensors. Disclosure of Invention The invention aims to provide a functional gas-sensitive material with the function of selectively detecting low-concentration hydrogen sulfide gas, a preparation method and application thereof, the bismuth vanadate material prepared by the invention can efficiently realize the rapid response of low-concentration hydrogen sulfide gas, and has better selectivity and service life. The invention has simple process, low cost and high efficiency, meets the actual production requirement, and has great application prospect. In order to achieve the above purpose, the invention adopts the following technical scheme: A bismuth vanadate material with a function of selectively detecting low-concentration hydrogen sulfide gas belongs to monoclinic bismuth vanadate, has a smooth eighteen-surface morphology, exposes 4 (110), 4 (011), 2 (010) and 8 (111) crystal faces, and can realize efficient separation of photogenerated carriers and characteristic adsorption of the hydrogen sulfide gas. The bismuth vanadate material is synthesized by a simple homogeneous precipitation method, bismuth nitrate and ammonium metavanadate are used as precursors, and the pH is regulated to prepare the octadecanoic bismuth vanadate sensor material with the function of light driving and high-selectivity detection of low-concentration hydrogen sulfide gas. The preparation method comprises the following steps: 1) Respectively dissolving 12 mmol bismuth nitrate and 12 mmol ammonium metavanadate in 50 mL 2M nitric acid solution, uniformly mixing and stirring the two solutions, adding 5g urea, stirring and heating to 90 ℃; 2) Continuously stirring the mixed solution obtained in the step 1) for 24 hours at 90 ℃; 3) Cooling the mixture obtained in the step 2) to room temperature, centrifuging, and washing with distilled water and ethanol for several times; 4) And 3) drying the solid obtained in the step 3) for 8 hours at the temperature of 80 ℃ to obtain the decaoctahedral bismuth vanadate material. The application of the bismuth vanadate material in the optical drive sensor for preparing the low-concentration hydrogen sulfide gas can detect the ppb level hydrogen sulfide in the gas. The invention has the remarkable advantages that: (1) The invention provides a method for preparing a functionalized bismuth vanadate material by a homogeneous precipitation method, which regulates and controls the growth of a bismuth vanadate crystal face by regulating the pH value of a precursor solution and prepares a hydrogen sulfide gas-sensitive sensing material by utilizing the separation and adsorption characteristics of a crystal face photo-generated carrier. (2) The octadecanoic bismuth vanadate material can efficiently detect low-concentration hydrogen sulfide gas under illumination, and has high selectivity and good stability. (3) The whole process is simple and easy to control, has low energy consumption, high yield and low cost, meets the actual production requirement, and is beneficial to large-scale popularization. Drawings FIG. 1 is an X-ray diffraction pattern of the decaoctahedral bismuth vanadate material obta