CN-117552167-B - Single-layer piezoresistive array type sensing knitted fabric formed by one knitting

CN117552167BCN 117552167 BCN117552167 BCN 117552167BCN-117552167-B

Abstract

The invention discloses a single-layer piezoresistive array type sensing knitted fabric formed by one knitting, which belongs to the field of intelligent fabrics and comprises a sensing substrate, a transverse electrode and a longitudinal electrode, wherein the whole knitted fabric is formed by one piece. The sensing substrate is divided into a sensing area and a structural support area, and the transverse electrode and the longitudinal electrode are divided into a functional section and a fixed section. The transverse electrode functional sections and the longitudinal electrode functional sections are respectively positioned at two sides of the sensing substrate, the crossing points of the transverse electrode functional sections and the longitudinal electrode functional sections are positioned in a sensing area of the sensing substrate, sensing units with a sandwich structure are formed in the sensing area, and the transverse electrode fixing sections and the longitudinal electrode fixing sections are distributed in a structural supporting area of the sensing substrate and are not contacted with each other. The sensing substrate, the transverse electrode and the longitudinal electrode are formed by weaving different yarns through a double-needle bed knitting machine, and the sensing array can be obtained by additionally arranging the transverse electrode and the longitudinal electrode.

Inventors

LIANG ZHEN
CHENG JINGYUAN

Assignees

中国科学技术大学

Dates

Publication Date: 20260505
Application Date: 20231114

Claims (8)

1. A single layer piezoresistive array type sensing knitted fabric formed by one knitting, characterized by comprising: the sensing device comprises a sensing substrate, a first sensing layer and a second sensing layer, wherein the sensing substrate is divided into a sensing area and a structural support area, the sensing area is composed of weakly conductive yarns, and the structural support area is composed of weakly conductive yarns or insulating yarns; the transverse electrode is divided into a transverse electrode functional section and a transverse electrode fixing section and is composed of good conductive yarns; the longitudinal electrode is divided into a longitudinal electrode functional section and a longitudinal electrode fixing section and is composed of good conductive yarns; The transverse electrode functional section and the longitudinal electrode functional section are respectively positioned at two sides of the sensing substrate, the intersection point of the transverse electrode functional section and the longitudinal electrode functional section is positioned in the sensing area, and sensing points of a sandwich structure are formed in the sensing area; the transverse electrode fixing sections and the longitudinal electrode fixing sections are distributed in the structural support area, good conductive yarns of the two fixing sections are not contacted with each other, a single-layer piezoresistive array type sensing knitted fabric formed by the sensing substrate, the transverse electrodes and the longitudinal electrodes is directly knitted by a double-needle bed knitting machine, and the knitted fabric has an array piezoresistive sensing function without overlapping a plurality of fabrics or sewing, printing and pasting; The method comprises the steps of knitting a sensing area, wherein the stitch method of the sensing area is knitting, all loops of weak conductive yarns of the sensing area are turned over to a single needle bed before the transverse electrode is knitted, the sensing area resumes knitting after the transverse electrode passes through the sensing area in a floating line mode, the single needle bed is a front needle bed or a rear needle bed and is called a transfer needle bed, and the stitch method of the structure supporting area is any combination of empty needles, knitting, tucking or picking holes.
2. The single layer piezoresistive array type sensing knitted fabric according to claim 1, wherein the resistivity of the weak conductive yarn is larger than the resistivity of the good conductive yarn.
3. The single-layer piezoresistive array type sensing knitted fabric of claim 1, wherein the double-needle bed knitting machine is a double-needle bed computerized flat knitting machine, a double-needle bed circular knitting machine or a hand-operated flat knitting machine, and the knitting method is directly designed by plate making software or realized by an artificial shaking table.
4. The single layer piezoresistive array type sensing knitted fabric of claim 1, wherein the needle method of the transverse electrode functional section is an empty needle, and the needle method of the transverse electrode fixing section is any combination of empty needle, knitting, tucking or picking.
5. The single layer piezoresistive array type sensing knitted fabric of claim 1, wherein the longitudinal electrode functional section is knitted by using an empty needle or a single needle bed, and the longitudinal electrode fixing section is knitted by using an empty needle or a single needle bed.
6. A single layer piezoresistive array type sensing knitted fabric according to claim 1, characterized in that said transversal electrode functional section is on the non-transferring needle bed side of said sensing area, said longitudinal electrode functional section is on the transferring needle bed side of said sensing area, said transversal electrode fixing section is knitted in the last column close to said transversal electrode functional section, and loops are formed on the needle bed of the non-transferring needle bed.
7. The single layer piezoresistive array type sensing knitted fabric according to any one of claims 1 to 6, wherein the longitudinal electrode moves the yarn nozzle in a small range by the hollow needle method, so as to avoid firing pins when weaving the sensing area, the structural support area and the transverse electrode.
8. A single-layer piezoresistive array type sensing knitted fabric formed by knitting according to any one of claims 1-6 is characterized in that the number of rows and the number of columns of the transverse electrode functional sections and the transverse electrode fixing sections are adjustable, the number of rows of the longitudinal electrode functional sections and the number of rows and the number of columns of the longitudinal electrode fixing sections are adjustable, the transverse electrodes and the longitudinal electrodes are additionally arranged to obtain a sensing array, and the stitch of each sensing unit in the sensing array is not limited.

Description

Single-layer piezoresistive array type sensing knitted fabric formed by one knitting Technical Field The invention belongs to the field of intelligent fabrics, and particularly relates to a single-layer piezoresistive array type sensing knitted fabric formed by one-step knitting. Background The piezoresistive array type sensing fabric is soft and breathable, can acquire pressure sensing data with spatial information in a certain range, and is one of hot directions in the field of flexible sensing. It is currently common to form a sensing array in a "sandwich" configuration by stacking two to three fabrics, or to weave core spun yarns into one fabric by a shuttle loom, and to interweave the core spun yarns to form the sensing array. In the two modes, the former needs to be sewn, the sewn multi-layer sensing fabric is generally thick and heavy and is not beneficial to wearing comfort, and the latter has complex upper machine working process and high cost under the condition of small-batch weaving due to the use of a tatting process. The monolithic knit version of the piezoresistive array type sensing fabric can meet the demands of reduced thickness and development cost, and there is currently a lack of design and implementation of this version. Disclosure of Invention In order to realize the single knitting form of the piezoresistive array type sensing fabric and reduce the thickness and development cost of the piezoresistive array type sensing fabric, the invention provides a single-layer piezoresistive array type sensing knitted fabric which is formed by one knitting. The sensing knitted fabric is realized by designing a needle method and weaving a special fabric structure, and the sensing array can be obtained after the knitted fabric is taken off without sewing, embroidery or printing. The technical scheme adopted for solving the technical problems is as follows: a single layer piezoresistive array type sensing knitted fabric formed by one knitting, comprising: the sensing device comprises a sensing substrate, a first sensing layer and a second sensing layer, wherein the sensing substrate is divided into a sensing area and a structural support area, the sensing area is composed of weakly conductive yarns, and the structural support area is composed of weakly conductive yarns or insulating yarns; the transverse electrode is divided into a transverse electrode functional section and a transverse electrode fixing section and is composed of good conductive yarns; the longitudinal electrode is divided into a longitudinal electrode functional section and a longitudinal electrode fixing section and is composed of good conductive yarns; The transverse electrode functional section and the longitudinal electrode functional section are respectively positioned at two sides of the sensing substrate, the intersection points of the transverse electrode functional section and the longitudinal electrode functional section are positioned in the sensing area, sensing points of a sandwich structure are formed in the sensing area, the transverse electrode fixing section and the longitudinal electrode fixing section are distributed in the structural support area, and good conductive yarns of the two fixing sections are not contacted with each other. The single-layer piezoresistive array type sensing knitted fabric formed by the sensing substrate, the transverse electrode and the longitudinal electrode is directly knitted by a double-needle bed knitting machine, and the knitted fabric has an array piezoresistive sensing function after knitting is finished, and a plurality of fabrics are not required to be overlapped or sewn, printed and pasted. Further, the weakly conductive yarn has a resistivity greater than the resistivity of the good conductive yarn. Further, the double-needle bed knitting machine is a double-needle bed computerized flat knitting machine, a double-needle bed circular knitting machine or a hand-operated flat knitting machine, and the needle method is directly designed by plate making software or realized by an artificial shaking table. Further, the stitch of the sensing area is knitting, the loops of the weak conductive yarn of the sensing area are all turned over to a single needle bed before the transverse electrode is knitted, the sensing area resumes knitting after the transverse electrode passes through the sensing area in a floating form, the single needle bed can be a front needle bed or a rear needle bed, which is called a transfer needle bed, and the stitch of the structural support area is any combination of empty needles, knitting, tucking or picking holes. Further, the needle method of the transverse electrode functional section is an empty needle, and the needle method of the transverse electrode fixing section is any combination of the empty needle, the knitting, the tucking or the picking hole. Further, the stitch of the longitudinal electrode functional section is any combination of empty nee