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CN-117642829-B - Perovskite spoke volt-photovoltaic cell

CN117642829BCN 117642829 BCN117642829 BCN 117642829BCN-117642829-B

Abstract

The invention provides a perovskite spoke photovoltaic-photovoltaic cell which sequentially comprises a first electrode, a first charge transmission layer, a perovskite layer, a second charge transmission layer and a second electrode, wherein the first electrode is a transparent electrode, the first charge transmission layer is an electron transmission layer and the second charge transmission layer is a hole transmission layer, or the first charge transmission layer is a hole transmission layer and the second charge transmission layer is an electron transmission layer, and the second electrode is a spoke electrode formed by compounding a conductor material and a radioactive source.

Inventors

  • CHEN CHANGSONG
  • TU BAO
  • GUO WENMING
  • GUO YONGSHENG
  • CHEN GUODONG
  • OUYANG CHUYING

Assignees

  • 宁德时代新能源科技股份有限公司

Dates

Publication Date
20260505
Application Date
20211231

Claims (13)

  1. 1. A perovskite spoke volt-photovoltaic cell is characterized in that, Sequentially comprises a first electrode, a first charge transmission layer, a perovskite layer, a second charge transmission layer and a second electrode, Wherein the first electrode comprises a transparent electrode, The first charge transport layer comprises an electron transport layer and the second charge transport layer comprises a hole transport layer, or the first charge transport layer comprises a hole transport layer and the second charge transport layer comprises an electron transport layer, The second electrode includes a radiation electrode formed by compounding an electrically conductive material with a radiation source.
  2. 2. The perovskite spoke photovoltaic-cell of claim 1, wherein the perovskite spoke photovoltaic-cell, The radiation source includes at least one of an alpha radiation source, a beta radiation source, an X-ray radiation source, and a gamma radiation source.
  3. 3. The perovskite spoke photovoltaic-cell of claim 2, wherein the perovskite spoke photovoltaic-cell, The alpha-type radioactive source comprises at least one of 210 Po or a compound thereof, 228 Th or a compound thereof, 235 U or a compound thereof, 238 Pu or a compound thereof, 238 PuO 2 microspheres, 241 Am or a compound thereof, 242 Cm or a compound thereof, and 244 Cm or a compound thereof; The beta-type radiation source comprises at least one of (C 4 H 3 3 H 5 -) n 、 3 H 2 、Ti 3 H 4 、 14 C or a compound thereof, 35 S or a compound thereof, 63 Ni or a compound thereof, 90 Sr or a compound thereof, 90 Sr/ 90 Y、 99 Tc or a compound thereof, 106 Ru or a compound thereof, 137 Cs or a compound thereof, 144 Ce or a compound thereof, 147 Pm or a compound thereof, 151 Sm or a compound thereof, and 226 Ra or a compound thereof.
  4. 4. The perovskite spoke photovoltaic-cell of claim 2, wherein the perovskite spoke photovoltaic-cell, The radioactive source comprises at least one of Ti 3 H 4 、 63 Ni or a compound thereof, 90 Sr/ 90 Y.
  5. 5. The perovskite spoke photovoltaic cell according to any one of claim 1 to 4, The content of the radioactive source in the radiation electrode is below 90wt%, preferably 5wt% to 30wt%.
  6. 6. The perovskite spoke photovoltaic cell according to any one of claim 1 to 5, The semiconductor material of the first and second charge transport layers includes at least one of imide compound, quinone compound, fullerene and its derivative, poly [ bis (4-phenyl) (2, 4, 6-trimethylphenyl) amine ], 2', 7' -tetra (N, N-p-methoxyanilino) -9,9' -spirobifluorene, methoxytriphenylamine-fluoroformamidine, poly (3, 4-ethylenedioxythiophene) polystyrene sulfonic acid, poly 3-hexylthiophene, triptycene-nucleated triphenylamine, 3, 4-ethylenedioxythiophene-methoxytriphenylamine, N- (4-aniline) carbazole-spirobifluorene, polythiophene, metal oxide of a metal element including Mg, ni, cd, zn, in, pb, mo, W, sb, bi, cu, hg, ti, ag, mn, fe, V, sn, zr, sr, ga or Cr, silicon oxide, strontium titanate, calcium titanate, lithium fluoride, calcium fluoride, cuprous thiocyanate, [6,6] -phenyl-C61-butyric acid isopropyl ester or [6,6] -phenyl-C71-butyric acid isopropyl ester.
  7. 7. The perovskite spoke photovoltaic cell according to any one of claim 1 to 6, The conductive materials of the first electrode and the second electrode comprise organic conductive materials, inorganic conductive materials or conductive materials obtained by mixing organic conductive materials and inorganic conductive materials, The organic conductive material comprises at least one of polymer (3, 4-ethylenedioxythiophene monomer), polythiophene, polyacetylene, polypyrrole, polyphenylene, polyphenylacetylene, polyaniline, epoxy resin, phenolic resin and polypropylene, The inorganic conductive material comprises at least one of transparent conductive oxide, metal and carbon derivative.
  8. 8. The perovskite spoke photovoltaic cell according to any one of claim 1 to 7, The perovskite in the perovskite layer satisfies the chemical formula ABX 3 , wherein the a includes at least one or more of a methylamine cation MA + , a formamidine cation FA + , and a cesium cation Cs + , the B includes at least one or more of a lead cation Pb 2+ and a tin cation Sn 2+ , and the X includes at least one or more of a halogen anion and COO - .
  9. 9. The perovskite spoke photovoltaic cell according to any one of claim 1 to 8, The thickness of the first electrode is 50 nm-1000 nm, and/or The thickness of the first charge transport layer is 10 nm-1000 nm, and/or The thickness of the perovskite layer is 50 nm-2000 nm, and/or The thickness of the second charge transport layer is 10 nm-1000 nm, and/or The thickness of the second electrode is 10 nm-500 nm.
  10. 10. The perovskite spoke photovoltaic cell according to any one of claim 1 to 9, When the second charge transport layer is an electron transport layer, the difference between the fermi level of the second electrode and the conduction band bottom level of the second charge transport layer is-1.0 eV to 1.0eV, and the difference between the fermi level of the second electrode and the valence band top level of the second charge transport layer is more than or equal to 1.0eV.
  11. 11. The perovskite spoke photovoltaic cell according to any one of claim 1 to 9, When the second charge transport layer is a hole transport layer, the difference between the Fermi level of the second electrode and the top energy level of the valence band of the second charge transport layer is-1.0 eV to 1.0eV, and the difference between the Fermi level of the second electrode and the bottom energy level of the conduction band of the second charge transport layer is less than or equal to-1.0 eV.
  12. 12. A method for manufacturing a perovskite spoke photovoltaic cell is characterized in that the perovskite spoke photovoltaic cell is provided with a first electrode, a first charge transmission layer, a perovskite layer, a second charge transmission layer and a second electrode in sequence, The manufacturing method comprises the following steps: a step of forming the first charge transport layer on the first electrode, A step of forming the perovskite layer on the first charge transport layer, A step of forming the second charge transport layer on the perovskite layer, and A step of forming the second electrode on the second charge transport layer, Wherein the first electrode is a transparent electrode, The first charge transport layer comprises an electron transport layer and the second charge transport layer comprises a hole transport layer, or the first charge transport layer comprises a hole transport layer and the second charge transport layer comprises an electron transport layer, The second electrode comprises a radiation electrode formed by compounding an electrically conductive material with a radiation source, The second electrode is formed by compounding a conductor material and a radioactive source through at least one of a chemical bath deposition method, an electrochemical deposition method, a chemical vapor deposition method, a physical epitaxial growth method, a thermal evaporation co-evaporation method, an atomic layer deposition method, a magnetron sputtering method, a precursor liquid spin coating method, a precursor liquid slit coating method, a precursor liquid knife coating method and a mechanical pressing method.
  13. 13. The method of manufacturing as claimed in claim 12, wherein, The second electrode is formed by compounding a conductor material and a radioactive source through at least one of a thermal evaporation co-evaporation method, a magnetron sputtering method and a precursor liquid spin coating method.

Description

Perovskite spoke volt-photovoltaic cell Technical Field The application relates to perovskite spoke photovoltaic-photovoltaic cells and methods of making the same. Background The photovoltaic cell is a photoelectric conversion device for converting light energy into electric energy, and has high energy conversion effect. Clean and pollution-free solar energy can be effectively utilized through the photovoltaic cells. But photovoltaic cells are greatly affected by weather, seasons. A nuclear battery, also called an isotope battery, is a device that converts energy released when a radioisotope decays into electric energy, and has advantages of a long life, excellent environmental stability, being able to be miniaturized, and the like, but has low energy conversion efficiency. The nuclear cell has various transduction modes, in which the nuclear cell which converts high-energy particle energy of a radiation source into photo-generated carriers by using a photoelectric effect and forms a power output through a PN junction or a PIN junction is called a radiovolt type nuclear cell (hereinafter, simply referred to as a radiovolt cell), and its operation principle is close to that of a photovoltaic cell. If the photovoltaic cell and the photovoltaic cell can be organically combined to synergistically exert their respective advantages, a photovoltaic cell excellent in environmental stability and high in energy conversion efficiency can be realized. Disclosure of Invention The present application has been made in view of the above-described problems, and an object of the present application is to provide a perovskite spoke photovoltaic cell that can simultaneously convert isotope decay particles or other energy particles and solar energy into electric energy, reduce the influence of light conditions, achieve an improvement in environmental stability, and improve energy conversion efficiency. The application also aims to provide a manufacturing method of the perovskite spoke photovoltaic-photovoltaic cell, which can reduce the manufacturing procedures of the cell and improve the production efficiency. A first aspect of the present application provides a perovskite spoke photovoltaic-cell having, in order, a first electrode, a first charge transport layer, a perovskite layer, a second charge transport layer, and a second electrode, wherein the first electrode is a transparent electrode, the first charge transport layer comprises an electron transport layer and the second charge transport layer comprises a hole transport layer, or the first charge transport layer comprises a hole transport layer and the second charge transport layer comprises an electron transport layer, and the second electrode comprises a spoke electrode formed by recombination of a radiation source and a conductive material. In some embodiments, the radiation source includes at least one of an alpha radiation source, a beta radiation source, an X-ray radiation source, and a gamma radiation source. In some embodiments, the alpha-emitting source comprises 210 Po or a compound thereof, 228 Th or a compound thereof, 235 U or a compound thereof, 238 Pu or a compound thereof, 238PuO2 At least one of microsphere, 241 Am or its compound, 242 Cm or its compound and 244 Cm or its compound, wherein the beta-type radioactive source comprises (C4H33H5-)n、3H2、Ti3H4、14C or its compound, 35 S or a compound thereof, 63 Ni or a compound thereof, 90 Sr or a compound thereof, 90Sr/90Y、99 Tc or a compound thereof, 106 Ru or its compound, 137 Cs or its compound, 144 Ce or its compound, 147 Pm or its compound, 151 Sm or a compound thereof, and 226 Ra or at least one of a compound thereof. In some embodiments, the radiation source comprises a beta radiation source, optionally comprising at least one of Ti 3H4、63Ni、90Sr/90 Y. In some embodiments, the radiation source is included in the radiation electrode in an amount of 90wt% or less, optionally 5wt% to 30wt%. In some embodiments, the semiconductor material of the first and second charge transport layers includes at least one of imide compounds, quinone compounds, fullerenes and derivatives thereof, poly [ bis (4-phenyl) (2, 4, 6-trimethylphenyl) amine ], 2', 7' -tetrakis (N, N-p-methoxyanilino) -9,9' -spirobifluorene, methoxytriphenylamine-fluoroformamidine, poly (3, 4-ethylenedioxythiophene) polystyrene sulfonic acid, poly 3-hexylthiophene, triptycene-nucleated triphenylamine, 3, 4-ethylenedioxythiophene-methoxytriphenylamine, N- (4-phenylamine) carbazole-spirobifluorene, polythiophene, metal oxides including metal elements of Mg, ni, cd, zn, in, pb, mo, W, sb, bi, cu, hg, ti, ag, mn, fe, V, sn, zr, sr, ga or Cr, silicon oxide, strontium titanate, calcium titanate, lithium fluoride, calcium fluoride, cuprous thiocyanate, [6,6] -phenyl-C61-butyric acid isopropyl ester or [6,6] -phenyl-C71-butyric acid isopropyl ester. In some embodiments, the conductive material of the first electrode and the second electrode inclu