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CN-117651984-B - Display device

CN117651984BCN 117651984 BCN117651984 BCN 117651984BCN-117651984-B

Abstract

The first TFT (9A) comprises a first semiconductor layer (17 a) of an oxide semiconductor, a first gate electrode (19A) provided on the first semiconductor layer (17 a) with a first gate insulating film (18 a) interposed therebetween, a first interlayer insulating film (20) covering a silicon oxide film of the first gate electrode (19A), and a second interlayer insulating film (21) covering a silicon nitride film on the first interlayer insulating film (20), wherein a through hole (M) is formed in the second interlayer insulating film (21), the through hole (M) is integrally overlapped with a first channel region (17 ac) of the first semiconductor layer (17 a), and a covering layer (22 e) is integrally provided on the surfaces of the first interlayer insulating film (20) and the peripheral edge portion of the through hole (M) exposed from the through hole (M).

Inventors

  • The village is very enlightened

Assignees

  • 夏普显示科技株式会社

Dates

Publication Date
20260512
Application Date
20211011

Claims (12)

  1. 1. A display device, comprising: A base substrate layer, and A thin film transistor layer disposed on the base substrate layer, In the thin film transistor layer, a first thin film transistor having a first semiconductor layer formed of an oxide semiconductor is provided for each sub-pixel, The first thin film transistor includes: The first semiconductor layer, wherein define the first conductor area and second conductor area separated each other, and define the first channel region between the first conductor area and the second conductor area; a first gate insulating film provided on the first semiconductor layer; A first gate electrode provided on the first gate insulating film and controlling conduction between the first conductor region and the second conductor region; a first interlayer insulating film formed of a silicon oxide film provided so as to cover the first gate electrode; a second interlayer insulating film composed of a silicon nitride film provided on the first interlayer insulating film, and A first terminal electrode and a second terminal electrode which are provided on the second interlayer insulating film so as to be separated from each other and are electrically connected to the first conductor region and the second conductor region via a first contact hole and a second contact hole formed in the first interlayer insulating film and the second interlayer insulating film, respectively, A through hole is formed in the second interlayer insulating film, the through hole penetrates the second interlayer insulating film so as to entirely overlap the first channel region, A metal covering layer is integrally provided on the surfaces of the first interlayer insulating film exposed from the through hole and the peripheral edge portion of the through hole.
  2. 2. The display device of claim 1, wherein the display device comprises a display device, The metal cover layer is formed of the same material as the first terminal electrode and the second terminal electrode in the same layer.
  3. 3. The display device of claim 1, wherein the display device comprises a display device, The thin film transistor layer includes: A first planarizing film provided so as to cover the first terminal electrode and the second terminal electrode; A wiring layer disposed on the first planarization film, and A second planarization film provided so as to cover the wiring layer, The metal cover layer is formed of the same material as the wiring layer in the same layer.
  4. 4. The display device according to claim 1, comprising: a light-emitting element layer provided on the thin film transistor layer and having a plurality of first electrodes, a plurality of light-emitting functional layers, and a common second electrode laminated in this order corresponding to the plurality of sub-pixels, and A sealing film provided so as to cover the light emitting element layer, The metal cover layer is formed of the same material as the first electrodes in the same layer.
  5. 5. The display device according to any one of claims 1 to 4, wherein, The metal cover layer is electrically connected with the first gate electrode.
  6. 6. The display device according to any one of claims 1 to 4, wherein, The metal overlayer is electrically floating.
  7. 7. The display device according to any one of claims 1 to 6, wherein, A lower gate electrode is provided on the base substrate layer side of the first channel region with a third interlayer insulating film interposed therebetween, and the lower gate electrode controls conduction between the first conductor region and the second conductor region.
  8. 8. The display device according to any one of claims 1 to 7, wherein, A first conductive layer and a second conductive layer which are in contact with the first conductive region and the second conductive region are respectively arranged on the substrate layer side of the first conductive region and the second conductive region, The first contact hole and the second contact hole are formed to overlap the first conductive layer and the second conductive layer, respectively.
  9. 9. The display device according to any one of claims 1 to 7, wherein, The first contact hole and the second contact hole are formed so as to overlap the first conductor region and the second conductor region, respectively.
  10. 10. The display device according to any one of claims 1 to 9, wherein, In the thin film transistor layer, in addition to the first thin film transistor, a second thin film transistor having a second semiconductor layer formed of polysilicon for each of the sub-pixels, The second thin film transistor includes: The second semiconductor layer has a third conductor region and a fourth conductor region defined therein; a second gate insulating film provided on the second semiconductor layer; A second gate electrode provided on the second gate insulating film and controlling conduction between the third conductor region and the fourth conductor region; a third interlayer insulating film, a first interlayer insulating film, and a second interlayer insulating film, which are provided in this order so as to cover the second gate electrode, and And third and fourth terminal electrodes which are provided on the second interlayer insulating film so as to be separated from each other and electrically connected to the third and fourth conductor regions through third and fourth contact holes formed in the second gate insulating film, the third interlayer insulating film, the first and second interlayer insulating films, respectively.
  11. 11. The display device of claim 10, wherein the display device comprises a display device, The first semiconductor layer is disposed on the third interlayer insulating film.
  12. 12. The display device of claim 4, wherein the display device comprises a display panel, Each light-emitting functional layer is an organic electroluminescent layer.

Description

Display device Technical Field The present invention relates to a display device. Background In recent years, attention has been paid to a self-luminous organic EL display device using an organic electroluminescence (Electro Luminescence, hereinafter referred to as "EL") element as a display device in place of a liquid crystal display device. In this organic EL display device, a plurality of thin film transistors (thin film transistor, hereinafter also referred to as "TFTs") are provided in each sub-pixel that is the smallest unit of an image. Here, as a semiconductor layer constituting a TFT, for example, a semiconductor layer formed of polycrystalline silicon having high mobility, a semiconductor layer formed of an oxide semiconductor such as In-Ga-Zn-O having small leakage current, or the like is known. For example, patent document 1 discloses a display device in which a transistor in which a channel is formed in an oxide semiconductor layer formed of an oxide semiconductor is used for a pixel portion and a driver circuit portion. Prior art literature Patent literature Patent document 1 Japanese patent application No. 6219562 Disclosure of Invention The invention aims to solve the technical problems However, in a TFT including a semiconductor layer made of an oxide semiconductor, if a silicon oxide film is used for an interlayer insulating film covering the semiconductor layer, ambient moisture may reach the semiconductor layer through the interlayer insulating film made of the silicon oxide film, and thus a depletion shift (depletion shift) may occur in which the threshold voltage of the TFT shifts to the negative side. Even if a silicon nitride film having moisture resistance is laminated on a silicon oxide film and the laminated film is used as an interlayer insulating film, hydrogen generated from the silicon nitride film reaches a semiconductor layer through the silicon oxide film, and thus there is a possibility that depletion shift occurs, and there is room for improvement. The present invention has been made in view of the above, and an object of the present invention is to suppress depletion bias caused by diffusion of moisture and hydrogen. Solution to the problem In order to achieve the above object, a display device according to the present invention includes a base substrate layer, a thin film transistor layer provided on the base substrate layer, wherein a first thin film transistor is provided for each sub-pixel in the thin film transistor layer, the first thin film transistor includes a first semiconductor layer formed of an oxide semiconductor, the first thin film transistor includes a first semiconductor layer having a first conductor region and a second conductor region defined therein to be separated from each other, a first channel region defined between the first conductor region and the second conductor region, a first gate insulating film provided on the first semiconductor layer, a first gate electrode provided on the first gate insulating film and controlling conduction between the first conductor region and the second conductor region, a first interlayer insulating film formed of a silicon oxide film provided so as to cover the first gate electrode, a second interlayer insulating film formed of a silicon nitride film provided on the first interlayer insulating film, and a second terminal film provided so as to be separated from each other, the first interlayer insulating film and the second terminal film are integrally formed in contact holes formed in the first interlayer insulating film and the second interlayer insulating film through the first terminal film and the second interlayer insulating film through the first terminal film through the first interlayer insulating film and the second interlayer insulating film through the first interlayer insulating film and the second interlayer insulating film through the second insulating film through the first interlayer insulating film through the first contact region. Effects of the invention According to the present invention, depletion bias due to diffusion of moisture and hydrogen can be suppressed. Drawings Fig. 1 is a plan view showing a schematic configuration of an organic EL display device according to a first embodiment of the present invention. Fig. 2 is a plan view of a display region of an organic EL display device according to a first embodiment of the present invention. Fig. 3 is a cross-sectional view of a display region of an organic EL display device according to a first embodiment of the present invention. Fig. 4 is an equivalent circuit diagram of a thin film transistor layer constituting an organic EL display device according to a first embodiment of the present invention. Fig. 5 is a cross-sectional view showing an organic EL layer constituting an organic EL display device according to a first embodiment of the present invention. Fig. 6 is a first cross-sectional view showing a method of manufacturing an orga