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CN-117693211-B - Organic electroluminescent diode and manufacturing method thereof

CN117693211BCN 117693211 BCN117693211 BCN 117693211BCN-117693211-B

Abstract

The invention relates to an organic electroluminescent diode and a manufacturing method thereof. The light-emitting layer of the organic electroluminescent diode comprises a P-type host material, an N-type host material and a guest material. The N-type main body materials are various, and the various N-type main body materials can respectively form various exciplex with the P-type main body materials. The energy of the exciplex 1 formed by the N-type host material and the P-type host material with relatively high LUMO energy level is higher than that of the exciplex 2 formed by the N-type host material and the P-type host material with relatively low LUMO energy level, and by the arrangement, part of energy of the exciplex 1 is transferred to the guest material and part of energy of the exciplex 2 is transferred to the guest material, so that energy loss can be reduced, more balanced energy transfer can be formed, and the service life of a device is prolonged.

Inventors

  • SUN DONGWEI
  • YAN XIAOLIN
  • CHEN YING

Assignees

  • 广东聚华印刷显示技术有限公司

Dates

Publication Date
20260508
Application Date
20221115

Claims (8)

  1. 1. An organic electroluminescent diode, comprising: the light-emitting device comprises a substrate, a first electrode layer, a light-emitting layer and a second electrode layer which are sequentially laminated; The light-emitting layer comprises a P-type host material, an N-type host material and a guest material, wherein three N-type host materials are arranged, and the three N-type host materials can respectively and independently form an exciplex with the P-type host material; The LUMO energy level of the exciplex formed by the N-type host material and the P-type host material with relatively high LUMO energy level is higher than that of the exciplex formed by the N-type host material and the P-type host material with relatively low LUMO energy level; The HOMO energy level of the P-type main body material is lower than that of the N-type main body material, the LUMO energy level of the P-type main body material is lower than that of the N-type main body material, the HOMO energy levels and the LUMO energy levels of the plurality of N-type main body materials are sequentially increased, the value of the HOMO energy level sequential increase of the three N-type main body materials is 0.2 eV-0.5 eV, and the value of the LUMO energy level sequential increase of the three N-type main body materials is 0.2 eV-0.5 eV.
  2. 2. The organic electroluminescent diode of claim 1, wherein the P-type host material is selected from at least one of mCP, TCTA, TAPC, NPB, tmPyPB and MADN.
  3. 3. The organic electroluminescent diode of claim 1, wherein the N-type host material is selected from at least two of Alq3, B3PYMPM, bphen, balq, BCP, and TPBi.
  4. 4. The organic electroluminescent diode of claim 1, wherein the guest material is selected from at least one of Ir (ppy) 3 、Ir(mppy) 3 、Ir(ppy) 2 acac and Firpic.
  5. 5. The organic electroluminescent diode according to claim 1, wherein the mass ratio of the P-type host material to the N-type host material is 1 (0.1-9), and the mass fraction of the guest material in the light emitting layer is 4% -12%.
  6. 6. The organic electroluminescent diode of claim 1, wherein the light-emitting layer comprises the P-type host material, the N-type host material, and the guest material intermixed.
  7. 7. The organic electroluminescent diode according to any one of claims 1 to 6, wherein at least one of a hole injection layer and a hole transport layer is further disposed between the first electrode layer and the light emitting layer; and/or at least one of an electron transport layer and an electron injection layer is further provided between the light emitting layer and the second electrode layer.
  8. 8. The manufacturing method of the organic electroluminescent diode is characterized by comprising the following steps: providing a substrate provided with a first electrode layer; manufacturing a light-emitting layer on the first electrode layer, wherein the light-emitting layer comprises three types of N-type host materials, three types of N-type host materials and P-type host materials, the three types of N-type host materials and the P-type host materials can form various corresponding excimer compounds respectively and independently, the LUMO energy level of an excimer compound formed by the N-type host materials and the P-type host materials is higher than that of an excimer compound formed by the N-type host materials and the P-type host materials with relatively low LUMO energy level, the HOMO energy level of the P-type host materials is lower than that of the N-type host materials, the LUMO energy level of the P-type host materials is lower than that of the N-type host materials, the HOMO energy level and the LUMO energy level of the N-type host materials are sequentially increased, the HOMO energy level of the three types of N-type host materials is sequentially increased by 0.2eV, and the HOMO energy level of the three types of N-type host materials is sequentially increased by 0.5eV; and manufacturing a second electrode layer on the light-emitting layer.

Description

Organic electroluminescent diode and manufacturing method thereof Technical Field The invention relates to the technical field of light emitting devices, in particular to an organic electroluminescent diode and a manufacturing method thereof. Background The organic electroluminescent diode (OrganicLightEmittingDiodes, OLED) is widely used in the display field and the illumination field because of its advantages of wide color gamut, high color saturation and contrast, active luminescence, and the like. Currently, a typical OLED device is a sandwich structure, specifically a stacked structure in which a transmission layer and a light-emitting layer are disposed between an anode layer and a cathode layer. When a certain voltage is applied to two electrodes of the OLED, holes drift from the anode and the injection layer to the light-emitting layer through the transmission layer, electrons drift from the cathode and the injection layer to the light-emitting layer through the transmission layer, the holes and the electrons are combined in the light-emitting layer to generate excitons, and the energy of the excitons is transited to generate photons so as to emit light with a certain wavelength. At present, a host material adopted by the green OLED is an exciplex, so that an energy barrier does not exist between a charge transport layer and a light-emitting layer, energy transfer between the exciplex and a dopant is efficient, the exciplex is formed to effectively reduce the polaron density in the dopant and a lower trap, the possibility of triplet quenching is reduced, and the device has small-efficiency roll-off. However, poor triplet energy confinement can lead to degradation of the host material, reducing device lifetime. Disclosure of Invention Based on this, it is necessary to provide an organic electroluminescent diode and a method for fabricating the same to improve the lifetime of the device. One of the purposes of the invention is to provide an organic electroluminescent diode, which comprises the following steps: an organic electroluminescent diode comprising: the light-emitting device comprises a substrate, a first electrode layer, a light-emitting layer and a second electrode layer which are sequentially laminated; The light-emitting layer comprises a P-type host material, an N-type host material and a guest material, wherein a plurality of N-type host materials are arranged, and the N-type host materials can respectively and independently form an exciplex with the P-type host material; The LUMO level of an exciplex formed by the N-type host material and the P-type host material, which have relatively high LUMO levels, is higher than the LUMO level of an exciplex formed by the N-type host material and the P-type host material, which have relatively low LUMO levels. In one embodiment, the HOMO level of the P-type host material is lower than the HOMO level of the N-type host material, the LUMO level of the P-type host material is lower than the LUMO level of the N-type host material, and the HOMO levels and LUMO levels of the plurality of N-type host materials are sequentially increased. In one embodiment, the values of the increasing HOMO levels of the N-type host materials are 0.2ev to 0.5ev, and the values of the increasing LUMO levels of the N-type host materials are 0.2ev to 0.5ev. In one embodiment, the P-type host material is selected from at least one of mCP, TCTA, TAPC, NPB, tmPyPB and MADN. In one embodiment, the N-type host material is selected from at least two of Alq3, B3PYMPM, bphen, balq, BCP, and TPBi. In one embodiment, the guest material is selected from at least one of Ir (ppy) 3、Ir(mppy)3、Ir(ppy)2 acac and Firpic. In one embodiment, the mass ratio of the P-type host material to the N-type host material is 1 (0.1-9), and the mass fraction of the guest material in the light-emitting layer is 4% -12%. In one embodiment, the light emitting layer includes the P-type host material, the N-type host material, and the guest material intermixed. In one embodiment, at least one of a hole injection layer and a hole transport layer is further disposed between the first electrode layer and the light emitting layer; and/or at least one of an electron transport layer and an electron injection layer is further provided between the light emitting layer and the second electrode layer. One of the purposes of the invention is to provide a manufacturing method of an organic electroluminescent diode, which comprises the following steps: A manufacturing method of an organic electroluminescent diode comprises the following steps: providing a substrate provided with a first electrode layer; Manufacturing a light-emitting layer on the first electrode layer, wherein the light-emitting layer comprises a P-type host material, an N-type host material and a guest material, the N-type host material is multiple, the HOMO energy levels and the LUMO energy levels of the N-type host materials are sequentially increased,