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CN-117790437-B - Radio frequency module and preparation method thereof

CN117790437BCN 117790437 BCN117790437 BCN 117790437BCN-117790437-B

Abstract

The embodiment of the application provides a radio frequency module and a preparation method of the radio frequency module. The radio frequency module comprises a functional module body, a first chip, a second chip and a filter module, wherein the functional module body comprises a substrate, the first chip is arranged on the substrate and is electrically connected with the substrate, the second chip is arranged on one side, away from the first chip, of the substrate, the second chip is electrically connected with the substrate, the filter module body is electrically connected with the functional module body, the filter module body is arranged on one side, away from the substrate, of the first chip, a heat dissipation gap is arranged between the filter module body and the functional module body, and the power of the first chip is larger than that of the second chip. The radio frequency module of the embodiment can be highly integrated, the overall size of the radio frequency module is reduced, the heat dissipation effect of the radio frequency module can be improved, and the stability of the radio frequency module is further improved.

Inventors

  • Zheng Zhangyao

Assignees

  • 泉州市三安集成电路有限公司

Dates

Publication Date
20260508
Application Date
20231229

Claims (13)

  1. 1. A radio frequency module, comprising: the function module, the function module includes: a substrate; the first chip is arranged on the substrate and is electrically connected with the substrate; A second chip arranged on one side of the substrate facing away from the first chip and electrically connected with the substrate, and The filter module is electrically connected with the functional module, is arranged on one side of the first chip far away from the substrate, is provided with a heat dissipation gap between the filter module and the functional module, and has higher power than the second chip; The functional module further includes: the wall layer is arranged on the substrate, the first chip is positioned in a cavity enclosed by the wall layer, and a third conductive through hole is formed in the wall layer; the first packaging layer covers the first chip, the first packaging layer exposes the third conductive through hole of the wall layer, which is away from the substrate, and the filter module is electrically connected with the substrate through the third conductive through hole; the filter module comprises an adapter plate, a filter device, a second welding material layer and a third conductive through hole, wherein the filter device is arranged on the adapter plate and is electrically connected with the adapter plate, the second welding material layer is arranged on one side, away from the filter device, of the adapter plate, the filter module is electrically connected with the third conductive through hole through the second welding material layer, and a heat dissipation gap is formed between the adapter plate and the first packaging layer.
  2. 2. The radio frequency module according to claim 1, wherein the size of the heat dissipation gap is in a range of 50 μm to 200 μm.
  3. 3. The radio frequency module of claim 1, wherein the functional module further comprises: A second encapsulation layer covering the second chip; A wiring layer disposed on the outer surface of the second packaging layer and electrically connected with the substrate, and And the first solder layer is connected to one side of the wiring layer, which is away from the substrate.
  4. 4. The radio frequency module according to claim 1, wherein the heat dissipation factor of the first encapsulation layer is greater than 1.5W/m 2 -K.
  5. 5. The radio frequency module of claim 1, wherein the filter module further comprises: And the third packaging layer is arranged on the adapter plate and covers the filter device.
  6. 6. The radio frequency module according to claim 5, wherein the filter module and the functional module are connected by the second solder layer, the second solder layer is connected between the wall layer and the interposer, and the second solder layer is electrically connected with the third conductive via.
  7. 7. The radio frequency module of claim 1, wherein the functional module further comprises: The third chip is arranged between the first chip and the substrate, the first chip and the third chip are arranged in a laminated mode, and the third chip and the first chip are electrically connected with the substrate through a first conductive through hole.
  8. 8. The radio frequency module of claim 1, wherein the functional module further comprises: and the fourth chip is stacked with the second chip, and the second chip and the fourth chip are electrically connected with the substrate through a second conductive through hole.
  9. 9. The radio frequency module of claim 7, wherein the power of the first chip is greater than the power of the second chip and the third chip.
  10. 10. The radio frequency module of claim 8, wherein the power of the first chip is greater than the power of the second chip and the fourth chip.
  11. 11. The radio frequency module of claim 1, wherein the first chip is a power amplifier chip and the second chip is a switching device.
  12. 12. A method of manufacturing a radio frequency module, comprising: Providing a functional module, the functional module comprising: a substrate; A first chip disposed on the substrate and electrically connected to the substrate, and The second chip is arranged on one side of the substrate, which is away from the first chip, and is electrically connected with the substrate; providing a filter module, and The side, away from the substrate, of the first chip is connected with the filter module, and a heat dissipation gap is formed between the filter module and the functional module; the function providing module comprises: Providing a substrate; Preparing a wall layer on the substrate, wherein the wall layer forms a cavity on the substrate, and a third conductive through hole is formed in the wall layer; Forming a first chip on the substrate, wherein the first chip is arranged in the cavity; Forming a first packaging layer, wherein the first packaging layer covers the wall layer and the first chip, and the first packaging layer exposes the third conductive through hole of the wall layer, which is away from the substrate; The providing a filter module includes: Providing an adapter plate; Forming a filter device on the adapter plate; Forming a third encapsulation layer covering the filter device, and Forming a second solder layer on one side of the adapter plate, which is away from the filter device, wherein the second solder layer is electrically connected with the filter device through the adapter plate; the filter module is connected to one side of the first chip, which is away from the substrate, so that a heat dissipation gap is formed between the filter module and the functional module, and the filter module comprises: And one side of the wall layer, which is away from the substrate, is connected with the adapter plate through the second solder layer, so that a heat dissipation gap is formed between the adapter plate and the first packaging layer.
  13. 13. The method for manufacturing a radio frequency module according to claim 12, wherein the providing function module further comprises: Forming a second chip on one side of the substrate away from the first chip; Forming a second packaging layer, wherein the second packaging layer covers the second chip; Forming a wiring layer on the outer surface of the second packaging layer; And forming a first solder layer on one side of the wiring layer, which is away from the substrate.

Description

Radio frequency module and preparation method thereof Technical Field The application relates to the technical field of semiconductors, in particular to a radio frequency module and a preparation method of the radio frequency module. Background The main difference between the 3D package and the 2.5D package is that the 2.5D package is wired and punched on an Interposer (Interposer), and the 3D package is directly punched and wired on a chip, thereby electrically connecting the upper and lower chips. 3D integration currently refers to integration through 3D TSVs (Through Silicon Via, through silicon vias) to a large extent. The 3D package structure is that all chips and passive devices are located above the plane of the substrate, the chips are stacked together, through silicon vias penetrating through the chips are arranged above the plane of the substrate, and wiring and through holes are also arranged on the substrate, so that the chips and the substrate are electrically connected. Advanced packaging technology is increasingly dependent on advanced manufacturing processes, and on close collaboration between design and manufacturing enterprises, 3D integration of different types of chips, typically two different chips vertically stacked and electrically connected together by TSVs and interconnected with an underlying substrate. However, the structure cannot be highly integrated to meet the high performance improvement of the radio frequency module, and the heat dissipation of the high-power chip after the high integration is also a problem to be solved. Disclosure of Invention Therefore, in order to overcome at least part of the defects and shortcomings in the prior art, the embodiment of the application provides a radio frequency module and a preparation method of the radio frequency module. The radio frequency module comprises a functional module body, a first chip, a second chip and a filter module body, wherein the functional module body comprises a substrate, the first chip is arranged on the substrate and is electrically connected with the substrate, the second chip is arranged on one side, away from the first chip, of the substrate, the second chip is electrically connected with the substrate, the filter module body is electrically connected with the functional module body, the filter module body is arranged on one side, away from the substrate, of the first chip, a heat dissipation gap is arranged between the filter module body and the functional module body, and the power of the first chip is larger than that of the second chip. On the other hand, the embodiment of the application also provides a preparation method of the radio frequency module, which comprises providing a functional module, wherein the functional module comprises a substrate, a first chip arranged on the substrate and electrically connected with the substrate, a second chip arranged on one side of the substrate, which is away from the first chip, and electrically connected with the substrate, and a filter module, and a heat dissipation gap is formed between the filter module and the functional module, which is connected with one side of the first chip, which is away from the substrate. As can be seen from the above, in the embodiment of the present application, the functional module is configured to include the first chip, the second chip and the substrate, and the first chip and the second chip are respectively disposed on two sides of the substrate, and the functional module is connected with the filter module, so that the radio frequency module can be highly integrated, the overall size of the radio frequency module is reduced, so that the terminal space can be reduced, and the high-power first chip is disposed adjacent to the heat dissipation gap, so that the heat dissipation effect of the radio frequency module can be improved, and the stability of the radio frequency module is further improved. Drawings In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings required for the description of the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art. Fig. 1 is a schematic structural diagram of a radio frequency module according to a first embodiment of the present application. Fig. 2 is a schematic flow chart of a method for manufacturing a radio frequency module according to a second embodiment of the present application. Fig. 3 is a schematic diagram illustrating a partial flow of step S10 in fig. 2. Fig. 4 is a schematic flow chart of step S10 in fig. 2. Fig. 5 is a schematic flow chart of step S20 in fig. 2. Fig. 6A to 6J are schematic structural diagrams of a functional module according to the present application. Fig. 7A to 7D are s